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    • 6. 发明授权
    • IMPROVED READ MODE FOR FLASH MEMORY
    • 改进的读取模式闪存
    • EP1908077B1
    • 2009-02-04
    • EP06787712.6
    • 2006-07-17
    • Spansion LLC
    • CHEN, HounienLEONG, Nancy, S.
    • G11C16/26
    • G11C16/26
    • A method for reading a nonvolatile memory array (102) including an array of memory cells (201), each memory cell (201) including a substrate (310), a control gate (328), a charge storage element (322), a source region (202/203) and a drain region (202/203), includes receiving, at an address register (106), a read command including an address for a memory cell (201) in the array (102) of memory cells (201) and an indication regarding whether the read command is a full page read command or a partial page read command (502). A starting address for a page including the received address is identified (504), wherein the page includes multiple rows of memory cells (201) in the array (102) of memory cells (201). The address register (106) is reset to the starting address for the page (506). It is determined whether all memory cells in the page are non-programmed (510). Data indicative of a non-programmed state of the page is output if it is determined that all memory cells in the page are non-programmed (516).
    • 9. 发明公开
    • Capacitance difference detecting circuit and mems sensor
    • Kapazitätsdifferenz-Detektorschaltung和MEMS-Aufnehmer
    • EP1596208A1
    • 2005-11-16
    • EP05252101.0
    • 2005-04-04
    • FUJITSU LIMITED
    • Kitano, MayoMoribe, TsuyoshiSumi, Hideki
    • G01R27/26G01D5/241G01C19/56
    • G01C19/56G01D5/24G01P15/125G01P2015/084
    • Oscillators have capacitors (C1,C2), respectively, whose capacitances change according to an external force and generate first oscillating signals (FA,FB) according to the capacitances. Each of the capacitors is disposed, for example, between a substrate and a mass body that is movably disposed to face the substrate and oscillates in a direction perpendicular to the substrate. A detecting unit (200) detects a relative difference between the capacitances of the capacitors as a difference between frequencies of the first oscillating signals. An angular speed or acceleration applied in a horizontal direction of the substrate is calculated according to the frequency change detected by the detecting unit. Therefore, a capacitance difference detecting circuit and a MEMS sensor that detect a minute change in the capacitances of the two capacitors caused by the external force are formed.
    • 振荡器分别具有电容(C1,C2),其电容根据外力而变化,并根据电容产生第一振荡信号(FA,FB)。 每个电容器例如设置在基板和可移动地设置成面对基板并在垂直于基板的方向上振荡的质量体之间。 检测单元(200)将电容器的电容之间的相对差作为第一振荡信号的频率之差检测。 根据由检测单元检测到的频率变化来计算在基板的水平方向施加的角速度或加速度。 因此,形成检测由外力引起的两个电容器的电容的微小变化的电容差检测电路和MEMS传感器。
    • 10. 发明公开
    • Test mode activation by phase comparison
    • Aktivierung eines Testmodus durch Phasevergleich
    • EP1557682A1
    • 2005-07-27
    • EP04014038.6
    • 2004-06-16
    • FUJITSU LIMITED
    • Saitou, TeruhikoOgasawara, AkihiroSengoku, Atsuhiro
    • G01R31/317
    • G01R31/31701
    • A semiconductor integrated circuit device (10) has a pair of oscillator terminals (X0, X1) that is respectively provided with two oscillation signals having phases opposite to each other. An oscillator circuit (11) provides an internal circuit with a system clock signal based on the oscillation signals. A mode detection circuit (12) detects that the pair of oscillator terminals is respectively provided with two input signals having the same phase, and provides a test circuit (13) with a detection signal. The test circuit sets a test mode according to the detection signal, and provides the internal circuit with a predetermined test signal. By setting the test mode using a pair of external terminals, an increase in the number of external terminals of the semiconductor integrated circuit device can be prevented.
    • 半导体集成电路器件(10)具有分别具有彼此相位相位的两个振荡信号的一对振荡器端子(X0,X1)。 振荡器电路(11)为内部电路提供基于振荡信号的系统时钟信号。 模式检测电路(12)检测该对振荡器端子分别具有相同相位的两个输入信号,并向检测电路(13)提供检测信号。 测试电路根据检测信号设置测试模式,并为内部电路提供预定的测试信号。 通过使用一对外部端子来设定测试模式,可以防止半导体集成电路器件的外部端子数量的增加。