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1. 发明公开

EP2175314A1 Method and system for designing a white-light phosphor-converted LED 审中-公开
标题翻译： Verfahren und System zum Entwurf einer phosphor-konvertierten Weisslicht-LED
公开(公告)号：EP2175314A1
公开(公告)日：2010-04-14
申请号：EP09172652.1
申请日：2009-10-09
申请人： Advanced Optoelectronic Technology Inc.
发明人： Tseng, Wen Liang , Lin, Hsin Chiang
IPC分类号： G02F1/13357 , H01L33/50
CPC分类号： C09K11/7774 , C09K11/7721 , C09K11/7775 , G02F1/133514 , G02F1/133603 , G02F1/133609 , G02F2001/133614 , H01L33/504 , H01L2933/0041 , Y02B20/181
摘要： A system and method for configuring a LED for back lighting a LCD with a high NTSC ratio is provided by using an algorithm to compute the optimum concentration of multiple phosphors so as to obtain white light similar to blackbody radiation of a given temperature and having a large color gamut with respect to the NTSC standard colour gamut.
摘要翻译：通过使用算法来计算多个荧光体的最佳浓度以提供类似于给定温度的黑体辐射的白光并且具有大的NTSC比率的用于配置用于背光照明的LED用于具有高NTSC比的LCD的系统和方法色域相对于NTSC标准色域。

2. 发明公开

EP2164301A2 Method and system for configuring high CRI LED 审中-公开
标题翻译： Verfahren und System zur Konfiguration einer hohen CRI-LED
公开(公告)号：EP2164301A2
公开(公告)日：2010-03-17
申请号：EP09169697.1
申请日：2009-09-08
申请人： Advanced Optoelectronic Technology Inc.
发明人： Tseng, Wen Liang , Lin, Hsin Chiang
IPC分类号： H05B33/08
CPC分类号： H05B33/0857 , C09K11/7731 , C09K11/7734 , C09K11/7768 , C09K11/7774 , C09K11/7775 , H01L33/504 , H01L2933/0041 , Y02B20/181
摘要： A method and a system for configuring a high CRI LED is provided in this invention, by using an algorithm to compute which of at least two phosphors that can be mixed with the LED. A mixed-emitting spectrum can provide a high CRI white light at a predetermined color temperature. The proposed method for configuring high CRI LED comprises the steps of:
calculating a standard spectrum, wherein the standard spectrum is a visible spectrum radiated from a blackbody with a first color temperature;
providing an emission spectrum of an LED; an emission spectrum of a first fluorescent powder, and an emission spectrum of a second fluorescent powder; and
adjusting the first fluorescent powder and the second fluorescent powder based on the standard spectrum to generate a first mixed-emitting spectrum.
摘要翻译：本发明提供了用于配置高CRI LED的方法和系统，通过使用算法来计算可与LED混合的至少两种荧光体中的哪一种。混合发射光谱可以在预定色温下提供高CRI白光。所提出的用于配置高CRI LED的方法包括以下步骤：计算标准光谱，其中标准光谱是从具有第一色温的黑体辐射的可见光谱; 提供LED的发射光谱; 第一荧光粉末的发射光谱和第二荧光粉末的发射光谱; 以及基于标准光谱调整第一荧光粉和第二荧光粉以产生第一混合发射光谱。

3. 发明公开

EP2053667A3 Package structure of photoelectronic device and fabricating method thereof 有权
标题翻译：组件具有光电子装置及其制造方法
公开(公告)号：EP2053667A3
公开(公告)日：2010-05-26
申请号：EP08167507.6
申请日：2008-10-24
申请人： Advanced Optoelectronic Technology Inc.
发明人： Tseng, Wen Liang , Chen, Lung Hsin , Tsang, Jian Shihn
IPC分类号： H01L33/00
CPC分类号： H01L33/486 , H01L31/0203 , H01L33/60 , H01L33/62 , H01L33/641 , H01L2224/48091 , H01L2924/10253 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A package structure for photoelectronic devices (31A) comprises a silicon substrate (11), a first insulating layer (21A,21B), a reflective layer (22A,22B), a second insulating layer (23A,23B), a first conductive layer (121,122), a second conductive layer (131,132) and a die (31A). The silicon substrate (11) has a first surface (111) and a second surface (112), wherein the first surface (111) is opposed to the second surface (112). The first surface (111) has a reflective opening (16), and the second surface (112) has at least two electrode via holes (17,18) connected to the reflective opening (16) and a recess (19) disposed outside the electrode via holes (17,18). The first insulating layer (21A,21B) overlays the first surface (111), the second surface (112) and the recesses (19). The reflective layer (22A,22B) is disposed on the reflective opening (16). The second insulating layer (23A,23B) is disposed on the reflective layer (22A,22B). The first conductive layer (121,122) is disposed on the surface of the second insulating layer (23A,23B). The second conductive layer (131,132) is disposed on the surface of the second surface (112) and inside the electrode via holes (17,18). The die (31A) is fixed inside the reflective opening (16) and electrically connected to the first conductive layer (121,122).

4. 发明授权

EP2093811B1 Package structure of compound semiconductor device 有权
标题翻译： Gehäusestruktureines Verbundhalbleiterbauelements
公开(公告)号：EP2093811B1
公开(公告)日：2017-01-11
申请号：EP09153073.3
申请日：2009-02-18
申请人： Advanced Optoelectronic Technology Inc.
发明人： Chen, Pin Chuan , Lin, Shen Bo
IPC分类号： H01L31/0203 , H01L33/48 , H01L33/62
CPC分类号： H01L33/486 , H01L24/45 , H01L31/0203 , H01L2224/05553 , H01L2224/05568 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/32257 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/181 , H01L2924/00 , H01L2224/05599 , H01L2924/00012

5. 发明授权

EP2053667B1 Package structure of light emitting diode device and fabricating method thereof 有权
标题翻译：组件，其具有一个发光装置及其制造方法
公开(公告)号：EP2053667B1
公开(公告)日：2016-06-22
申请号：EP08167507.6
申请日：2008-10-24
申请人： Advanced Optoelectronic Technology Inc.
发明人： Tseng, Wen Liang , Chen, Lung Hsin , Tsang, Jian Shihn
IPC分类号： H01L33/48 , H01L33/60 , H01L33/62
CPC分类号： H01L33/486 , H01L31/0203 , H01L33/60 , H01L33/62 , H01L33/641 , H01L2224/48091 , H01L2924/10253 , H01L2924/1461 , H01L2924/00014 , H01L2924/00

6. 发明公开

EP2164301A3 Method and system for configuring high CRI LED 审中-公开
标题翻译：方法和系统配置高演色性LED
公开(公告)号：EP2164301A3
公开(公告)日：2014-12-24
申请号：EP09169697.1
申请日：2009-09-08
申请人： Advanced Optoelectronic Technology Inc.
发明人： Tseng, Wen Liang , Lin, Hsin Chiang
IPC分类号： H05B33/08
CPC分类号： H05B33/0857 , C09K11/7731 , C09K11/7734 , C09K11/7768 , C09K11/7774 , C09K11/7775 , H01L33/504 , H01L2933/0041 , Y02B20/181
摘要： A method and a system for configuring a high CRI LED is provided in this invention, by using an algorithm to compute which of at least two phosphors that can be mixed with the LED. A mixed-emitting spectrum can provide a high CRI white light at a predetermined color temperature. The proposed method for configuring high CRI LED comprises the steps of:
calculating a standard spectrum, wherein the standard spectrum is a visible spectrum radiated from a blackbody with a first color temperature;
providing an emission spectrum of an LED; an emission spectrum of a first fluorescent powder, and an emission spectrum of a second fluorescent powder; and
adjusting the first fluorescent powder and the second fluorescent powder based on the standard spectrum to generate a first mixed-emitting spectrum.

7. 发明公开

EP2093811A3 Package structure of compound semiconductor device and fabricating method thereof 有权
标题翻译：复合半导体装置及其制造方法的壳体结构其
公开(公告)号：EP2093811A3
公开(公告)日：2013-05-29
申请号：EP09153073.3
申请日：2009-02-18
申请人： Advanced Optoelectronic Technology Inc.
发明人： Chen, Pin Chuan , Lin, Shen Bo
IPC分类号： H01L31/0203 , H01L33/48
CPC分类号： H01L33/486 , H01L24/45 , H01L31/0203 , H01L2224/05553 , H01L2224/05568 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/32257 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/181 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
摘要： Proposed is a package structure of a compound semiconductor device (40) comprisimg a thin film substrate (30), a die (43), at least one metal wire (44) and a transparent encapsulation material (46). The thin film substrate comprises a first conductive film (31), a second conductive film (32), and an insulating dielectric material (35). The die (43) is mounted on the surface of the first conductive film (31), and is electrically connected to the first conductive film and the second conductive film (32) through the metal wire. The transparent encapsulation material (46) overlays the first conductive film, second conductive film, and die. The surfaces of the first conductive film (31) and second conductive film (32) which is opposite the transparent encapsulation material act as electrodes. The insulating dielectric material (46) is between the first conductive film and second conductive film.

8. 发明公开

EP2123972A1 Light emitting diode street lamp having auxiliary lamp 审中-公开
标题翻译： LichtemittierendeDiodenstraßenlampemit Hilfslampe
公开(公告)号：EP2123972A1
公开(公告)日：2009-11-25
申请号：EP09160434.8
申请日：2009-05-15
申请人： Advanced Optoelectronic Technology Inc.
发明人： Tu, Shang Te , Chang, Chia Chen , Deng, Yeng Chu
IPC分类号： F21S8/00 , F21S8/08 , G08G1/095 , F21Y101/02 , F21W131/103
CPC分类号： F21S8/086 , F21W2111/02 , F21W2131/103 , F21Y2115/10 , G08G1/095 , G09F9/33
摘要： A light emitting diode (LED) street lamp (100) having an auxiliary lamp comprises a lamp body (102) for road illumination and an auxiliary light source (104) for showing drivers or passerby a current status of an upcoming traffic signal. In an embodiment, the auxiliary light source synchronizes indication with a traffic light. The auxiliary light source (104) comprises a first LED module disposed on the lamp body.
摘要翻译：具有辅助灯的发光二极管（LED）路灯（100）包括用于道路照明的灯体（102）和辅助光源（104），用于显示驾驶员或路人即将到来的交通信号灯的当前状态。在一个实施例中，辅助光源将指示与交通灯同步。辅助光源（104）包括设置在灯体上的第一LED模块。

9. 发明公开

EP2053667A2 Package structure of photoelectronic device and fabricating method thereof 有权
标题翻译：组件，其具有一个发光装置及其制造方法
公开(公告)号：EP2053667A2
公开(公告)日：2009-04-29
申请号：EP08167507.6
申请日：2008-10-24
申请人： Advanced Optoelectronic Technology Inc.
发明人： Tseng, Wen Liang , Chen, Lung Hsin , Tsang, Jian Shihn
IPC分类号： H01L33/00
CPC分类号： H01L33/486 , H01L31/0203 , H01L33/60 , H01L33/62 , H01L33/641 , H01L2224/48091 , H01L2924/10253 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A package structure for photoelectronic devices (31A) comprises a silicon substrate (11), a first insulating layer (21A,21B), a reflective layer (22A,22B), a second insulating layer (23A,23B), a first conductive layer (121,122), a second conductive layer (131,132) and a die (31A). The silicon substrate (11) has a first surface (111) and a second surface (112), wherein the first surface (111) is opposed to the second surface (112). The first surface (111) has a reflective opening (16), and the second surface (112) has at least two electrode via holes (17,18) connected to the reflective opening (16) and a recess (19) disposed outside the electrode via holes (17,18). The first insulating layer (21A,21B) overlays the first surface (111), the second surface (112) and the recesses (19). The reflective layer (22A,22B) is disposed on the reflective opening (16). The second insulating layer (23A,23B) is disposed on the reflective layer (22A,22B). The first conductive layer (121,122) is disposed on the surface of the second insulating layer (23A,23B). The second conductive layer (131,132) is disposed on the surface of the second surface (112) and inside the electrode via holes (17,18). The die (31A) is fixed inside the reflective opening (16) and electrically connected to the first conductive layer (121,122).
摘要翻译：用于光电子器件的封装结构（31A）包括硅衬底（11），一个第一绝缘层（21A，21B），反射层（22A，22B），第二绝缘层（23A，23B），第一导电层（121122），第二导电层（131,132）和一个是（31A）。硅衬底（11）具有第一表面（111）和第二表面（112）worin所述第一表面（111）相对着的第二表面（112）。所述第一表面（111）具有反射开口（16）和第二表面（112）具有至少两个通孔连接到所述反射开口（16）和凹部（19）的外部所设置的电极（17,18）通孔电极（17,18）。第一绝缘层（21A，21B）覆盖第一表面（111），所述第二表面（112）和凹部（19）。反射层（22A，22B）被设置在反射开口（16）。第二绝缘层（23A，23B）被设置在反射层（22A，22B）上。所述第一导电层（121,122）被设置在第二绝缘层（23A，23B）的表面上。第二导电层（131,132）被设置在第二表面（112）的表面上和通孔电极（17,18）的内部。模具（31A）被固定在反射开口（16）和电连接到所述第一导电层（121,122）的内部。

10. 发明授权

EP1835550B1 Package structure for solid-state lighting devices and method of fabricating the same 有权
标题翻译：住房建设用于固态照明装置及其制造方法
公开(公告)号：EP1835550B1
公开(公告)日：2012-07-11
申请号：EP07002931.9
申请日：2007-02-12
申请人： Advanced Optoelectronic Technology Inc.
发明人： Tseng, Wen Liang , Chen, Lung Hsin
IPC分类号： H01L33/48 , H01L33/60
CPC分类号： H01L33/486 , H01L33/44 , H01L33/60 , H01L33/62 , H01L33/64 , H01L2224/16 , H01L2224/48091 , H01L2224/48227 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/00014

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