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1. 发明公开

EP1461833A1 MATRIX-ADDRESSABLE APPARATUS WITH ONE OR MORE MEMORY DEVICES 审中-公开
标题翻译：与一个或多个存储块矩阵-DEVICE
公开(公告)号：EP1461833A1
公开(公告)日：2004-09-29
申请号：EP02780190.1
申请日：2002-10-29
申请人： Thin Film Electronics ASA
发明人： GUDESEN, Hans Gude
IPC分类号： H01L29/41 , G11C5/02 , G11C11/22
CPC分类号： H01L27/1203 , G11C11/22 , H01L27/11502 , H01L27/285
摘要： In a matrix-addressable apparatus comprising one or more memory devices with multidirectionally switchable memory cells (5) arranged in a passive matrix-addressable array, the memory cells comprise a memory medium in the form of a ferroelectric or electret thin-film memory material capable of being polarized by an applied electric field and exhibiting hysteresis, and preferably the memory material is a polymer or copolymer. A memory device in the apparatus comprises at least a first and a second electrode means (E 1;E2) such that the electrodes (ε2) of the second electrode means (E2) are provided in recesses (3) in the electrodes (ε1) of the first electrode means (E1) and oriented orthogonally thereto, the recesses (3) extending only half-way through the electrodes (ε1) of the first electrode means (E1). The electrodes (ε2) of the second electrode means (E2) are provided in the recesses (3) surrounded by memory material (4a,4b) which also contacts the crossing electrodes (ε1) of the first electrode means (E1) whereby a memory cell (5) is defined in the crossing between electrodes (ε1;ε2) of the first and second electrode means (E1;E2) respectively and formed by a memory material surrounding the electrodes (ε2) of the second means (E2) on at least three sides thereof, thus providing at least three switching directions in the memory cell (5) at different locations thereof. Two or more memory devices can be stacked in the apparatus according to the invention, thus implementing the latter as a volumetric data storage apparatus.

2. 发明授权

EP1891583B1 A DATA STORAGE DEVICE 失效转让
标题翻译：数据存储设备
公开(公告)号：EP1891583B1
公开(公告)日：2011-09-21
申请号：EP06747668.9
申请日：2006-06-08
申请人： Thin Film Electronics ASA
发明人： BRÖMS, Per , KARLSSON, Christer , LEISTAD, Geirr, I. , GUDESEN, Hans Gude , HAMBERG. Per , BJÖRKLID, Staffan , CARLSSON, Johan , GUSTAFSSON, Göran
IPC分类号： G06K19/067 , G06K1/12 , G06K7/06 , G06K19/06 , G06K7/08 , G11B9/00 , G11C11/22
CPC分类号： G06K7/0021 , B82Y10/00 , G11B9/02 , G11B9/1454 , G11C11/22 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016
摘要： In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrode means and/or contact means are either provided in the memory unit or in the read/write unit and contact means are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Contact means in the read/write unit are provided connectable to driving, sensing and control means located in the read/write unit or in an external device connected with the latter. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.

3. 发明公开

EP1891583A1 A DATA STORAGE DEVICE 失效转让
标题翻译：数据存储设备
公开(公告)号：EP1891583A1
公开(公告)日：2008-02-27
申请号：EP06747668.9
申请日：2006-06-08
申请人： Thin Film Electronics ASA
发明人： BRÖMS, Per , KARLSSON, Christer , LEISTAD, Geirr, I. , GUDESEN, Hans Gude , HAMBERG. Per , BJÖRKLID, Staffan , CARLSSON, Johan , GUSTAFSSON, Göran
IPC分类号： G06K19/067 , G06K1/12 , G06K7/06 , G06K19/06 , G06K7/08
CPC分类号： G06K7/0021 , B82Y10/00 , G11B9/02 , G11B9/1454 , G11C11/22 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016
摘要： In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrode means and/or contact means are either provided in the memory unit or in the read/write unit and contact means are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Contact means in the read/write unit are provided connectable to driving, sensing and control means located in the read/write unit or in an external device connected with the latter. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.
摘要翻译：在非易失性电存储器系统中，存储器单元和读/写单元被设置为物理上分离的单元。存储器单元基于存储器材料，该存储器材料可以通过在存储器材料上施加电场而被设置为至少两个不同的物理状态。电极装置和/或接触装置或者设置在存储单元中或者设置在读/写单元中，并且接触装置至少总是设置在读/写单元中。电极和触点以几何布置提供，其在存储层中几何限定一个或多个存储单元。读/写单元中的接触装置被提供为可连接到位于读/写单元中或与其连接的外部装置中的驱动，感测和控制装置。在存储器单元和读取/写入单元之间建立物理接触关闭所寻址的存储器单元上的电路，使得可以实现读取，写入或擦除操作。存储器单元的存储材料可以是铁电或驻极体材料，其可以被极化成两个可辨别的极化状态，或者它可以是具有电阻阻抗特性的材料，使得材料的存储单元可以被设置为特定的稳定通过施加电场的电阻值。

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