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1. 发明公开

EP3224631A1 VERFAHREN ZUR BESTIMMUNG EINER ALTERUNG VON LEISTUNGSHALBLEITERMODULEN SOWIE VORRICHTUNG UND SCHALTUNGSANORDNUNG 有权
公开(公告)号：EP3224631A1
公开(公告)日：2017-10-04
申请号：EP15821054.2
申请日：2015-12-18
申请人： Siemens Aktiengesellschaft
发明人： BUTRON-CCOA, Jimmy Alexander , LINDEMANN, Andreas , MITIC, Gerhard
IPC分类号： G01R31/26 , G01K7/01 , H02M1/32
CPC分类号： G01R31/2619 , G01K3/10 , G01K7/01 , G01R31/046 , G01R31/2628 , G01R31/2642 , H02M2001/327 , H03K2017/0806
摘要： The invention relates to a method for characterizing a power semiconductor module (1), which has at least one power semiconductor component (2), comprising the following steps: determining a thermal model (4) of the power semiconductor module (1) at a reference time point; detecting a reference temperature (T
j,zth ) on the basis of the thermal model (4) of the power semiconductor module (1); measuring at least one temperature-sensitive electrical parameter (TSEP) of the power semiconductor module (1) at at least one time point which is later than the reference time point during operation of the power semiconductor module (1); detecting a current temperature (T
j,tsep ) of the power semiconductor module (1) from the at least one measured temperature-sensitive electrical parameter (TSEP) of the power semiconductor module (1); detecting a temperature difference (ΔΤ) between the current temperature (T
j,tsep) ) and the reference temperature (T
j,zth ); and determining a deterioration of the power semiconductor module (1) on the basis of the detected temperature difference (ΔΤ).
摘要翻译：本发明涉及一种用于表征具有至少一个功率半导体部件（2）的功率半导体模块（1）的方法，包括以下步骤：确定功率半导体模块（1）的热模型（4）参考时间点; 基于功率半导体模块（1）的热模型（4）检测参考温度（Tj，zth）; 在所述功率半导体模块（1）的操作期间，在比所述参考时间点晚的至少一个时间点处测量所述功率半导体模块（1）的至少一个温度敏感电参数（TSEP）; 从所述功率半导体模块（1）的所述至少一个测得的温度敏感电参数（TSEP）中检测所述功率半导体模块（1）的当前温度（Tj，tsep）; 检测当前温度（Tj，tsep））和参考温度（Tj，zth）之间的温度差（ΔT）; 以及基于检测到的温度差（ΔT）确定功率半导体模块（1）的劣化。

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