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1. 发明授权

EP3382743B1 LAMINATE AND MAKING METHOD 有权
公开(公告)号：EP3382743B1
公开(公告)日：2019-10-09
申请号：EP18163266.2
申请日：2018-03-22
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： YASUDA, Hiroyuki , SUGO, Michihiro , KATO, Hideto , KONDO, Kazunori
IPC分类号： H01L21/02 , H01L23/00 , H01L21/683

2. 发明公开

EP3309824A1 WAFER LAMINATE AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：晶片层压板及其制造方法
公开(公告)号：EP3309824A1
公开(公告)日：2018-04-18
申请号：EP17195677.4
申请日：2017-10-10
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： YASUDA, Hiroyuki , SUGO, Michihiro , KATO, Hideto
IPC分类号： H01L21/683
CPC分类号： H01L24/04 , H01L21/6835 , H01L24/03 , H01L2221/68327 , H01L2221/6834
摘要： To provide a wafer laminate which permits easy bonding between a support and a wafer, permits easy delamination of a wafer from a support, enables enhanced productivity of a thin wafer, and is suited to production of a thin wafer, and for a method of producing the wafer laminate.
The wafer laminate includes a support, an adhesive layer formed on the support, and a wafer laminated in such a manner that its front surface having a circuit surface faces the adhesive layer. The adhesive layer includes a light-shielding resin layer A and a non-silicone thermoplastic resin-coating resin layer B in this order from the support side. The resin layer A is composed of a resin that contains a repeating unit having a condensed ring, and the resin layer B has a storage elastic modulus E' at 25°C of 1 to 500 MPa and a tensile break strength of 5 to 50 MPa.
摘要翻译：本发明的目的在于提供一种晶片层叠体，该晶片层叠体能够容易地进行支撑体与晶片的接合，容易从支撑体剥离晶片，能够提高薄型晶片的生产率，适合薄型晶片的制造，以及制造方法晶片层压板。该晶片层压体包括载体，在该载体上形成的粘合剂层，以及其具有电路表面的前表面面对该粘合剂层的方式层压的晶片。粘合剂层从支撑体一侧依次包括遮光树脂层A和非有机硅热塑性树脂涂覆树脂层B. 树脂层A由含有具有稠环的重复单元的树脂构成，树脂层B在25℃下的储能弹性模量E'为1〜500MPa，拉伸断裂强度为5〜50MPa 。

3. 发明授权

EP3450478B1 EPOXY-CONTAINING, ISOCYANURATE-MODIFIED SILICONE RESIN, PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, LAMINATE, AND PATTERN FORMING PROCESS 有权
公开(公告)号：EP3450478B1
公开(公告)日：2020-11-11
申请号：EP18190647.0
申请日：2018-08-24
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： HAYASHI, Kumiko , MARUYAMA, Hitoshi , KONDO, Kazunori , KATO, Hideto
IPC分类号： C08G59/30 , C08G77/52 , C09D183/14 , G03F7/038 , G03F7/075

4. 发明授权

EP3173453B1 WAFER LAMINATE AND MAKING METHOD 有权
公开(公告)号：EP3173453B1
公开(公告)日：2020-09-30
申请号：EP16199909.9
申请日：2016-11-22
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： YASUDA, Hiroyuki , SUGO, Michihiro , KATO, Hideto
IPC分类号： C09J183/04 , C09J183/14 , H01L21/683

5. 发明公开

EP3382742A1 SEMICONDUCTOR DEVICE, MAKING METHOD, AND LAMINATE 审中-公开
公开(公告)号：EP3382742A1
公开(公告)日：2018-10-03
申请号：EP18163261.3
申请日：2018-03-22
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： YASUDA, Hiroyuki , SUGO, Michihiro , KATO, Hideto , KONDO, Kazunori
IPC分类号： H01L21/02 , H01L23/00 , H01L21/683
CPC分类号： H01L21/6835 , C09J161/06 , H01L21/568 , H01L21/683 , H01L23/3107 , H01L24/19 , H01L24/29 , H01L2221/68345 , H01L2224/29082 , H01L2224/2919 , H01L2224/82005
摘要： A semiconductor device is provided comprising a support, an adhesive resin layer, an insulating layer, a redistribution layer, a chip layer, and a mold resin layer. The adhesive resin layer consists of a resin layer (A) comprising a photo-decomposable resin containing a fused ring in its main chain and a resin layer (B) comprising a non-silicone base thermoplastic resin and having a storage elastic modulus E' of 1-500 MPa at 25°C and a tensile break strength of 5-50 MPa. The semiconductor device is easy to fabricate and has thermal process resistance, the support is easily separated, and a semiconductor package is efficiently produced.

6. 发明公开

EP3128548A1 SEMICONDUCTOR DEVICE, LAYERED SEMICONDUCTOR DEVICE, SEALED-THEN-LAYERED SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREFOR 审中-公开
标题翻译：半导体部件，分层的半导体部件，密封，然后分层半导体元件及其制造方法
公开(公告)号：EP3128548A1
公开(公告)日：2017-02-08
申请号：EP15772875.9
申请日：2015-03-16
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： TAKEMURA, Katsuya , SOGA, Kyoko , ASAI, Satoshi , KONDO, Kazunori , SUGO, Michihiro , KATO, Hideto
IPC分类号： H01L23/12 , C25D5/02 , C25D7/00 , H01L21/312 , H01L23/52 , H01L25/10 , H01L25/11 , H01L25/18 , H05K1/11 , H05K3/00 , H05K3/28 , H05K3/40
CPC分类号： H01L23/562 , C08G59/3281 , C09D163/00 , C09D183/04 , C09D183/10 , C23C14/042 , C23C14/34 , C25D5/022 , C25D5/505 , C25D7/00 , C25D7/123 , G03F7/0035 , G03F7/0757 , H01L21/4853 , H01L21/486 , H01L21/565 , H01L21/568 , H01L23/3114 , H01L23/49816 , H01L23/49827 , H01L23/5384 , H01L23/5386 , H01L23/5389 , H01L24/13 , H01L24/16 , H01L24/24 , H01L24/32 , H01L24/73 , H01L24/82 , H01L24/83 , H01L24/92 , H01L24/97 , H01L25/03 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/13025 , H01L2224/13111 , H01L2224/16145 , H01L2224/16225 , H01L2224/19 , H01L2224/24226 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/73267 , H01L2224/82005 , H01L2224/8203 , H01L2224/92125 , H01L2224/92244 , H01L2224/97 , H01L2225/06513 , H01L2225/06548 , H01L2225/06555 , H01L2225/06582 , H01L2225/1035 , H01L2225/1058 , H01L2924/3511 , H05K1/185 , H05K2201/10515 , H01L2224/83 , H01L2224/82 , H01L2924/01047 , H01L2924/00 , H01L2224/83005
摘要： The present invention is a semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second insulating layer, wherein the metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second insulating layer, and the metal interconnect penetrates the second insulating layer from its upper surface and is electrically connected to the through electrode at an lower surface of the second insulating layer. This semiconductor apparatus can be easily placed on a circuit board and stacked, and can reduce its warpage even with dense metal interconnects.
摘要翻译：本发明是一种半导体装置，导通半导体器件的金属焊盘和金属互连的每个电连接到所述半导体器件中，通过电极和焊料凸块的每个电连接到所述金属互连，第一绝缘的半导体装置在其上的半导体器件被置于层，形成在半导体器件上形成第二绝缘层，形成在第二绝缘层上的第三绝缘层，worin金属互连电连接到所述半导体器件经由所述上半导体器件的金属垫在在所述第二绝缘层的上表面上，和金属互连从其上表面贯通第二绝缘层和电连接到在所述第二绝缘层的下表面的贯通电极。该半导体装置可以被容易地放置在电路板上并堆叠，并能减少其翘曲即使致密的金属互连件。

7. 发明授权

EP3569640B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS 有权
公开(公告)号：EP3569640B1
公开(公告)日：2020-11-18
申请号：EP19172971.4
申请日：2019-05-07
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： MARUYAMA, Hitoshi , KATO, Hideto , SUGO, Michihiro
IPC分类号： C08G77/46 , C08G77/52 , C08G77/54 , C09D183/12 , C09D183/14 , G03F7/075

8. 发明授权

EP3309824B1 WAFER LAMINATE AND METHOD OF PRODUCING THE SAME 有权
公开(公告)号：EP3309824B1
公开(公告)日：2019-06-05
申请号：EP17195677.4
申请日：2017-10-10
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： YASUDA, Hiroyuki , SUGO, Michihiro , KATO, Hideto
IPC分类号： H01L21/683

9. 发明公开

EP3450478A1 EPOXY-CONTAINING, ISOCYANURATE-MODIFIED SILICONE RESIN, PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, LAMINATE, AND PATTERN FORMING PROCESS 有权
公开(公告)号：EP3450478A1
公开(公告)日：2019-03-06
申请号：EP18190647.0
申请日：2018-08-24
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： HAYASHI, Kumiko , MARUYAMA, Hitoshi , KONDO, Kazunori , KATO, Hideto
IPC分类号： C08G59/30 , C08G77/388 , G03F7/075
摘要： A photosensitive resin composition comprising an isocyanurate-modified silicone resin containing an epoxy group in the molecule is easy to form a resin coating which has high transparency, light resistance and heat resistance, is amenable to micro-processing, and is useful in applications for protecting and encapsulating optical devices. The coating can be processed in thick film form to define a pattern having a fine size and perpendicularity, and becomes a cured coating which has improved adhesion to substrates, electronic parts, semiconductor devices, and supports for circuit boards, mechanical properties, electric insulation, and crack resistance, and is reliable as an insulating protective film.

10. 发明授权

EP3091048B1 RESIN COMPOSITION, RESIN FILM, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF 有权
标题翻译：树脂组合物，树脂膜，半导体装置及其制造方法
公开(公告)号：EP3091048B1
公开(公告)日：2017-08-02
申请号：EP16166672.2
申请日：2016-04-22
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： KONDO, Kazunori , ICHIOKA, Yoichiro , KATO, Hideto
IPC分类号： C08K3/00 , C08K3/36 , C08K5/13 , C08L63/00 , C08L83/04 , H01L23/29
CPC分类号： H01L21/78 , C08G59/02 , C08G59/3281 , C08G59/5073 , C08G59/621 , C08K3/013 , C08K3/36 , C08K5/13 , C08L63/00 , C08L83/04 , C08L83/06 , C08L83/14 , C08L2201/08 , C08L2203/206 , H01L23/296 , C08L83/10
摘要： A film-forming resin composition for use in encapsulating large-diameter thin-film wafers includes (A) a silicone resin having a weight-average molecular weight of 3,000 to 500,000 and containing repeating units of formula (1) wherein R 1 to R 4 are monovalent hydrocarbon groups, but R 3 and R 4 are not both methyl, m and n are integers of 0 to 300, R 5 to R 8 are divalent hydrocarbon groups, a and b are positive numbers such that a+b = 1, and X is a specific divalent organic moiety; (B) a phenolic compound of formula (7) wherein Y is a carbon atom or a tetravalent hydrocarbon group of 2 to 20 carbon atoms, and R 13 to R 16 are monovalent hydrocarbon groups or hydrogen atoms; and (C) a filler.
摘要翻译：用于封装大直径薄膜晶片的成膜树脂组合物包括：（A）重均分子量为3,000至500,000且含有式（1）重复单元的有机硅树脂，其中R 1至R 4 是单价烃基，但是R 3和R 4不都是甲基，m和n是0-300的整数，R 5至R 8是二价烃基，a和b是正数，使得a + b = 1，并且X是特定的二价有机部分; （B）式（7）的酚化合物，其中Y是碳原子或2至20个碳原子的四价烃基，R 13至R 16是单价烃基或氢原子; 和（C）填料。

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