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1. 发明授权

EP1001047B1 Alkene ligand precursor and synthesis method 有权
标题翻译：烯烃配体前体和合成方法
公开(公告)号：EP1001047B1
公开(公告)日：2003-10-08
申请号：EP99308880.6
申请日：1999-11-08
申请人： SHARP KABUSHIKI KAISHA
发明人： Zhuang, Wei-Wei , Nguyen, Tue , Evans, David R. , Hsu, Sheng Teng , Barrowcliff, Robert , Charneski, Lawrence J.
IPC分类号： C07F1/08 , C07F15/00 , C07F1/00 , C23C16/18
CPC分类号： C23C16/18

2. 发明授权

EP1000947B1 Metal containing 2-methyl-1-butene precursors and synthesis method 有权
标题翻译：含金属-2-甲基-1-丁烯的前体化合物和它们的制备
公开(公告)号：EP1000947B1
公开(公告)日：2003-08-20
申请号：EP99308236.1
申请日：1999-10-19
申请人： SHARP KABUSHIKI KAISHA
发明人： Zhuang, Wei-Wei , Nguyen, Tue , Charneski, Lawrence J. , Evans, David R. , Hsu, Sheng Teng
IPC分类号： C07F1/08 , C07F15/00 , C07F1/00 , C23C16/18
CPC分类号： C23C16/18 , C07F1/08

3. 发明公开

EP1308419A1 Precursors for zirconium and hafnium oxide thin film deposition 审中-公开
标题翻译：前体氧化锆和氧化铪的薄膜的沉积
公开(公告)号：EP1308419A1
公开(公告)日：2003-05-07
申请号：EP02023059.5
申请日：2002-10-16
申请人： Sharp Kabushiki Kaisha
发明人： Zhuang, Wei-Wei , Evans, David Russell
IPC分类号： C01G25/02 , C01G27/02
CPC分类号： C07F7/006 , C01G25/02 , C01G27/02 , C23C16/405 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/0228 , H01L21/3141 , H01L21/31625
摘要： A method of making a precursor for a thin film formed by chemical vapor deposition processes, includes mixing ZCl 4 with H(tmhd) 3 solvent and hydrocarbon solvent such as benzene to form a solution, where Z is an element taken from the group of elements consisting of hafnium and zirconium; refluxing the solution for twelve hours in an argon atmosphere; removing the solvents via vacuum, thereby producing a solid compound; and sublimating the compound at 200°C in a near vacuum of 0.1 mmHg. A ZO x precursor, for use in a chemical vapor deposition process, includes a Z-containing compound taken from the group of compounds consisting of ZCl(tmhd) 3 and ZCl 2 (tmhd) 2 .

4. 发明公开

EP1054441A3 Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for its fabrication 审中-公开
$Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for its fabrication$
标题翻译：伴随的难熔金属和制造过程的复合隔挡铱 - 金属 - 氧垒结构
公开(公告)号：EP1054441A3
公开(公告)日：2003-01-02
申请号：EP00304334.6
申请日：2000-05-22
申请人： SHARP KABUSHIKI KAISHA
发明人： Zhang, Fengyan , Maa, Jer-shen , Hsu, Sheng Teng , Zhuang, Wei-Wei
IPC分类号： H01L21/02 , H01L21/285 , H01L21/768
CPC分类号： H01L28/75 , H01L21/28568 , H01L28/55
摘要： An Ir-M-O composite film (16) has been provided that is useful in forming an electrode of a ferroelectric capacitor, where M includes a variety of refractory metals. The Ir combination film is resistant to high temperature annealing in oxygen environments. When used with an underlying barrier layer (14) made from the same variety of M transition metals, the resulting conductive barrier also suppresses to diffusion of Ir into any underlying Si substrates. As a result, Ir silicide products are not formed, which degrade the electrode interface characteristics. That is, the Ir combination film remains conductive, not peeling or forming hillocks, during high temperature annealing processes, even in oxygen. The Ir-M-O conductive electrode/barrier structures are useful in nonvolatile FeRAM devices, DRAMs, capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices. A method for forming an Ir-M-O composite film barrier layer (16) and an Ir-M-O composite film ferroelectric electrode are also provided.
摘要翻译： IR-M-O复合膜-已经提供确实处于铁电电容器，其中，M包括各种难熔金属中的电极的形成是有用的。红外组合电影是在氧环境中的高温退火抗性。当与在从同一品种M转换金属制成下面的阻挡层使用，所得到的导电阻挡，从而禁止与Ir扩散到任何底层Si衬底。其结果是，IR硅化物的产品不形成，其降低了电极的界面特性。即，组合的Ir电影保持导通，不剥离或形成小丘，在高温退火过程中，即使在氧气。的IR-M-O导电电极/势垒结构是在非易失性FeRAM的设备，DRAM中，电容器，热电型红外线传感器，光学显示器，光学开关，压电换能器是有用的，并且表面声波装置。因此，提供一种用于在铱-M-O复合膜阻挡层和Ir-M-O复合薄膜铁电电极形成方法。

5. 发明公开

EP1016666A3 Allyl-derived precursor and synthesis method 有权
标题翻译： Allyl-enthaltendeVorläuferverbindungund deren Herstellung
公开(公告)号：EP1016666A3
公开(公告)日：2002-01-16
申请号：EP99308873.1
申请日：1999-11-08
申请人： SHARP KABUSHIKI KAISHA
发明人： Zhuang, Wei-Wei , Nguyen, Tue , Evans, David R. , Hsu, Sheng Teng , Stecker, Greg Michael , Charneski, Lawrence J.
IPC分类号： C07F1/00 , C07F7/08 , C23C16/44
CPC分类号： C23C16/18 , C07F1/08 , C07F7/082
摘要： A Cu(hfac) allyl-derived ligand precursor has been provided. The ligand includes group consisting of alkyl, phenyl, trialkylsilane, trialkoxylsilane, halodialkylsilane, dihaloalkylsilane, trihalosilane, triphenylsilane, alkoxyl, halogen, chloroformate, cyanide , cycloalkyl, cycloalkylamine, alkyl ether, isocyanate, and pentafluorobenzene. Examples of the allyl-derived ligand precursors have proved to be stable at room temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursors, including a Cu(hfac)(allyltrimethylsilane) precursor.
摘要翻译：已经提供了一种Cu（hfac）烯丙基衍生的配体前体。配体包括由烷基，苯基，三烷基硅烷，三烷氧基硅烷，卤代烷基硅烷，二卤代烷基硅烷，三卤硅烷，三苯基硅烷，烷氧基，卤素，氯甲酸酯，氰化物，环烷基，环烷基胺，烷基醚，异氰酸酯和五氟苯组成的组。已经证明烯丙基衍生的配体前体的实例在室温下是稳定的，并且在较高温度下具有足够的挥发性。沉积有该前体的铜具有低电阻率和高粘合特性。提供了一种合成方法，其产生高产率的上述前体，包括Cu（hfac）（烯丙基三甲基硅烷）前体。

6. 发明公开

EP1054441A2 Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for its fabrication 审中-公开
$Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for its fabrication$
标题翻译：伴随的难熔金属和制造过程的复合隔挡铱 - 金属 - 氧垒结构
公开(公告)号：EP1054441A2
公开(公告)日：2000-11-22
申请号：EP00304334.6
申请日：2000-05-22
申请人： SHARP KABUSHIKI KAISHA
发明人： Zhang, Fengyan , Maa, Jer-shen , Hsu, Sheng Teng , Zhuang, Wei-Wei
IPC分类号： H01L21/02 , H01L21/285
CPC分类号： H01L28/75 , H01L21/28568 , H01L28/55
摘要： An Ir-M-O composite film has been provided that is useful in forming an electrode of a ferroelectric capacitor, where M includes a variety of refractory metals. The Ir combination film is resistant to high temperature annealing in oxygen environments. When used with an underlying barrier layer made from the same variety of M transition metals, the resulting conductive barrier also suppresses to diffusion of Ir into any underlying Si substrates. As a result, Ir silicide products are not formed, which degrade the electrode interface characteristics. That is, the Ir combination film remains conductive, not peeling or forming hillocks, during high temperature annealing processes, even in oxygen. The Ir-M-O conductive electrode/barrier structures are useful in nonvolatile FeRAM devices, DRAMs, capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices. A method for forming an Ir-M-O composite film barrier layer and an Ir-M-O composite film ferroelectric electrode are also provided.

7. 发明授权

EP1184485B1 MOCVD precursors in mixed solvents 有权
标题翻译：在溶剂混合物中前体MOCVD
公开(公告)号：EP1184485B1
公开(公告)日：2008-08-06
申请号：EP01307249.1
申请日：2001-08-24
申请人： Sharp Kabushiki Kaisha
发明人： Li, Tingkai , Zhuang, Wei-Wei , Hsu, Sheng Teng
IPC分类号： C23C16/40
CPC分类号： C23C16/40 , C23C16/409

8. 发明公开

EP1507297A3 Method for obtaining reversible resistance switches in a PCMO thin film deposited on a highly crystallized seed layer 有权
标题翻译：一种用于在沉积在高度结晶种子层上的PCMO薄膜的可逆电阻切换方法
公开(公告)号：EP1507297A3
公开(公告)日：2006-04-26
申请号：EP04013726.7
申请日：2004-06-11
申请人： SHARP KABUSHIKI KAISHA
发明人： Zhuang, Wei-Wei , Li, Tingkai , Evans, David Russell , Hsu, Sheng Teng , Pan, Wei
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608
摘要： A method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer includes: depositing by MOCVD, a seed layer of PCMO thin film, in highly crystalline form, having a thickness of between about 50Å to 300Å, depositing a second PCMO thin film layer on the seed layer by spin coating, having a thickness of between about 500Å to 3000Å, to form a combined PCMO layer; increasing the resistance of the combined PCMO film in a semiconductor device by applying a negative electric pulse of between about -4V to -5V, having a pulse width of between about 75 nsec to 1 µsec; and decreasing the resistance of the combined PCMO layer in a semiconductor device by applying a positive electric pulse of between about +2.5V to +4V, having a pulse width greater than 2.0 µsec,

9. 发明公开

EP1335417A3 Method for fabricating variable resistance device, method for fabricating non-volatile variable resistance memory device, and non-volatile variable resistance memory device 审中-公开
标题翻译：可变电阻装置的制造方法，对于具有可变电阻的非易失性存储装置的制造方法，以及具有可变电阻的非易失性存储器设备
公开(公告)号：EP1335417A3
公开(公告)日：2006-01-04
申请号：EP03250688.3
申请日：2003-02-04
申请人： SHARP KABUSHIKI KAISHA
发明人： Zhuang, Wei-Wei , Hsu, Sheng Teng
IPC分类号： H01L21/02 , H01L27/10
CPC分类号： H01L27/101 , G11C11/5685 , G11C13/0007 , G11C2213/31 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1641 , Y10S502/525
摘要： A method of fabricating a variable resistance device comprising preparing a silicon substrate; forming a silicon oxide layer on the substrate, depositing a first metal layer on the silicon oxide layer, wherein the metal of the first metal layer is selected from the group of metals consisting of platinum and iridium, forming a perovskite metal oxide thin film on the first metal layer, depositing a second metal layer on the perovskite metal oxide thin film, wherein the metal of the second metal layer is selected from the group of metals consisting of platinum and iridium, annealing the structure obtained by the step of depositing the second metal layer at a temperature of between about 400°C to 700°C for between about five minutes and three hours, and changing a resistance between the first metal layer and the second metal layer.

10. 发明公开

EP1507297A2 Method for obtaining reversible resistance switches in a PCMO thin film deposited on a highly crystallized seed layer 有权
标题翻译：一种用于在沉积在高度结晶种子层上的PCMO薄膜的可逆电阻切换方法
公开(公告)号：EP1507297A2
公开(公告)日：2005-02-16
申请号：EP04013726.7
申请日：2004-06-11
申请人： Sharp Kabushiki Kaisha
发明人： Zhuang, Wei-Wei , Li, Tingkai , Evans, David Russell , Hsu, Sheng Teng , Pan, Wei
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608
摘要： A method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer includes: depositing by MOCVD, a seed layer of PCMO thin film, in highly crystalline form, having a thickness of between about 50Å to 300Å, depositing a second PCMO thin film layer on the seed layer by spin coating, having a thickness of between about 500Å to 3000Å, to form a combined PCMO layer; increasing the resistance of the combined PCMO film in a semiconductor device by applying a negative electric pulse of between about -4V to -5V, having a pulse width of between about 75 nsec to 1 µsec; and decreasing the resistance of the combined PCMO layer in a semiconductor device by applying a positive electric pulse of between about +2.5V to +4V, having a pulse width greater than 2.0 µsec,
摘要翻译：一种用于获得可逆电阻法在PCMO薄膜开关当用高度结晶的晶种层集成包括：通过MOCVD，PCMO薄膜的种子层沉积，在高结晶形式，其具有的厚度为约50埃之间，以300埃，沉积通过旋涂法在籽晶层上的第二PCMO薄膜层，其厚度在约500埃到3000埃的，以形成组合的PCMO层; 通过施加介于约-4 V至-5V的负的电脉冲，其具有介于约75纳秒的脉冲宽度为1 .mu.sec增加组合PCMO膜在半导体器件的电阻; 并且通过施加约+ 2.5V到一个正的电脉冲到+ 4V，具有脉冲减少在一个半导体器件中的合并的PCMO层的电阻宽度大于2.0微秒，

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