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1. 发明公开

EP3176814A1 PHOTODETECTOR-ARRAYS AND METHODS OF FABRICATION THEREOF 有权转让
标题翻译：光电检测器阵列及其制造方法
公开(公告)号：EP3176814A1
公开(公告)日：2017-06-07
申请号：EP16201313.0
申请日：2016-11-30
申请人： Semi-Conductor Devices-Elbit Systems - Rafael Partnership
发明人： KARNI, Yoram , LUKOMSKY, Inna , AVNON, Eran
IPC分类号： H01L21/60 , H01L27/146 , H01L23/485
CPC分类号： H01L27/1469 , H01L23/544 , H01L23/562 , H01L24/06 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L27/14634 , H01L27/14636 , H01L2223/5442 , H01L2223/54426 , H01L2223/54473 , H01L2224/06131 , H01L2224/13109 , H01L2224/14131 , H01L2224/16105 , H01L2224/16108 , H01L2224/81048 , H01L2224/81122 , H01L2224/81129 , H01L2224/8113 , H01L2224/81132 , H01L2224/81194 , H01L2224/81815 , H01L2224/81948 , H01L2225/06513 , H01L2225/06593 , H01L2924/351 , H01L2924/381 , H01L2924/014
摘要： A photodetector-array and a method for fabricating the same are disclosed. The photodetector-array includes: a first semiconductor structure having an active region including plurality of active photodetectors defining light sensitive regions; and a second semiconductor structure defining a plurality of active readout integrated circuit pixels (RICPs) having electric contacts electronically connectable to electric contacts of respective active photodetectors of the first semiconductor structure, for carrying out respective read out operations from the active photodetectors. The first and second semiconductor structures are respectively made according to a first and second semiconductor technologies (e.g. different semiconductor materials/composition) associated with respectively different first and second coefficients of thermal expansion (CTEs). The pitch distances of the electric contacts of the active photodetectors and the pitch distances of the respective electric contacts of the active RICPs are configured in accordance with a difference between the first and second CTEs such that at high temperatures, at which the electrical coupling between the first and second semiconductor structures is performed, the electric contacts of the active photodetectors overlap with electric contacts of their respective RICPs. Accordingly, in the photodetector-array, the first and second semiconductor structures are assembled and bonded together such that the electric contacts of at least 99.5% of the active photodetector substantially overlap with the respective electric contacts of the RICPs associated therewith.
摘要翻译：公开了一种光电探测器阵列及其制造方法。该光电探测器阵列包括：第一半导体结构，具有包括限定光敏区域的多个有源光电探测器的有源区域; 以及限定多个有源读出集成电路像素（RICP）的第二半导体结构，所述有源读出集成电路像素具有可电连接到第一半导体结构的各个有源光电检测器的电触点的电触点，用于从有源光电检测器执行各自的读出操作。第一和第二半导体结构分别根据与分别不同的第一和第二热膨胀系数（CTE）相关联的第一和第二半导体技术（例如，不同的半导体材料/组分）制成。根据第一CTE与第二CTE之间的差异来配置有源光电检测器的电触点的节距和有源RICP的相应电触点的节距，使得在高温下，在所述高温下，执行第一和第二半导体结构，有源光电检测器的电触点与它们各自的RICP的电触点重叠。因此，在光电探测器阵列中，第一和第二半导体结构被组装并结合在一起，使得有源光电探测器的至少99.5％的电触点基本上与与其相关联的RICP的相应电触点重叠。

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