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    • 4. 发明公开
    • Magnetic logic device and methods of manufacturing and operating the same
    • 相同的磁逻辑器件和用于制造和操作方法
    • EP1677420A2
    • 2006-07-05
    • EP05257745.9
    • 2005-12-15
    • Samsung Electronics Co., Ltd.
    • Kim, Sung-dongKim, Eun-sikJung, Ju-HwanKo, Hyoung-sooMin, Dong-kiPark, Hong-sikHong, Seung-bum, 507-1305 Hayan Maeul
    • H03K19/18
    • H03K19/16H01L43/08
    • Provided are a magnetic logic device (MLD) and methods of manufacturing and operating the same. The MLD includes: a first interconnection (40); a lower magnetic layer (42a) formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer (42b) formed on the lower magnetic layer; an upper magnetic layer (42c) formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection (44) formed on the upper magnetic layer. A first current source (46) is disposed between one end of the first interconnection and one end of the second interconnection and a second current source (48) is disposed between the other end of the first interconnection and the other end of the second interconnection.
    • 本发明提供一种磁性逻辑器件(MLD)和制造方法和操作是相同的。 该MLD包括:第一互连(40); 形成在所述第一互连的下部磁性层(42A),具有固定在预定方向的磁化方向的下磁性层; 的非磁性层(42B)形成在下磁性层上; 在所形成的非磁性层上上部磁性层(42C),其具有磁化方向平行或反平行于下磁性层的磁化方向上磁性层; 和第二互连(44)形成在上部磁性层上。 第一电流源(46)被所述第一互连的一个端部和所述第二互连的一个端部和第二电流源(48)的第一互连的另一端和所述第二互连的另一端之间设置之间设置。