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1. 发明公开

EP1688940A2 Ferroelectric recording medium and writing method for the same 有权
标题翻译： Ferroelektrisches Aufzeichnungsmedium und Schreibverfahrendafür
公开(公告)号：EP1688940A2
公开(公告)日：2006-08-09
申请号：EP06250600.1
申请日：2006-02-03
申请人： Samsung Electronics Co., Ltd.
发明人： Ko, Hyoung-soo , Jung, Ju-hwan , Kim, Eun-sik , Kim, Sung-dong , Park, Hong-sik , Park, Chul-min, c/o Samsung Adv. Inst. of Techn. , Hong, Seung-bum, c/o 507-1305 Hayan Maeul
IPC分类号： G11B9/02
CPC分类号： G11B9/02 , G11C11/5657 , Y10S977/947
摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage, and a nonvolatile anisotrophic conduction layer formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multi bits can be expressed on one domain of the ferroelectric recording medium.
摘要翻译：提供了铁电记录介质及其写入方法。铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层，以及形成在强电介质层上的非挥发性各向异性导电层。当接收到比矫顽电压低的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。因此，可以在铁电记录介质的一个域上表示多位。

2. 发明授权

EP1688940B1 Ferroelectric recording medium and writing method for the same 有权
标题翻译：它们的铁电记录介质和写入方法
公开(公告)号：EP1688940B1
公开(公告)日：2010-08-11
申请号：EP06250600.1
申请日：2006-02-03
申请人： Samsung Electronics Co., Ltd.
发明人： Ko, Hyoung-soo , Jung, Ju-hwan , Kim, Eun-sik , Kim, Sung-dong , Park, Hong-sik , Park, Chul-min, c/o Samsung Advanced Institute of Tech. , Hong, Seung-bum
IPC分类号： G11B9/02
CPC分类号： G11B9/02 , G11C11/5657 , Y10S977/947

3. 发明公开

EP1677420A3 Magnetic logic device and methods of manufacturing and operating the same 有权
标题翻译：相同的磁逻辑器件和用于制造和操作方法
公开(公告)号：EP1677420A3
公开(公告)日：2008-11-19
申请号：EP05257745.9
申请日：2005-12-15
申请人： Samsung Electronics Co., Ltd.
发明人： Kim, Sung-dong , Kim, Eun-sik , Jung, Ju-Hwan , Ko, Hyoung-soo , Min, Dong-ki , Park, Hong-sik , Hong, Seung-bum, 507-1305 Hayan Maeul
IPC分类号： H03K19/18
CPC分类号： H03K19/16 , H01L43/08
摘要： Provided are a magnetic logic device (MLD) and methods of manufacturing and operating the same. The MLD includes: a first interconnection (40); a lower magnetic layer (42a) formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer (42b) formed on the lower magnetic layer; an upper magnetic layer (42c) formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection (44) formed on the upper magnetic layer. A first current source (46) is disposed between one end of the first interconnection and one end of the second interconnection and a second current source (48) is disposed between the other end of the first interconnection and the other end of the second interconnection.

4. 发明公开

EP1677420A2 Magnetic logic device and methods of manufacturing and operating the same 有权
标题翻译：相同的磁逻辑器件和用于制造和操作方法
公开(公告)号：EP1677420A2
公开(公告)日：2006-07-05
申请号：EP05257745.9
申请日：2005-12-15
申请人： Samsung Electronics Co., Ltd.
发明人： Kim, Sung-dong , Kim, Eun-sik , Jung, Ju-Hwan , Ko, Hyoung-soo , Min, Dong-ki , Park, Hong-sik , Hong, Seung-bum, 507-1305 Hayan Maeul
IPC分类号： H03K19/18
CPC分类号： H03K19/16 , H01L43/08
摘要： Provided are a magnetic logic device (MLD) and methods of manufacturing and operating the same. The MLD includes: a first interconnection (40); a lower magnetic layer (42a) formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer (42b) formed on the lower magnetic layer; an upper magnetic layer (42c) formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection (44) formed on the upper magnetic layer. A first current source (46) is disposed between one end of the first interconnection and one end of the second interconnection and a second current source (48) is disposed between the other end of the first interconnection and the other end of the second interconnection.
摘要翻译：本发明提供一种磁性逻辑器件（MLD）和制造方法和操作是相同的。该MLD包括：第一互连（40）; 形成在所述第一互连的下部磁性层（42A），具有固定在预定方向的磁化方向的下磁性层; 的非磁性层（42B）形成在下磁性层上; 在所形成的非磁性层上上部磁性层（42C），其具有磁化方向平行或反平行于下磁性层的磁化方向上磁性层; 和第二互连（44）形成在上部磁性层上。第一电流源（46）被所述第一互连的一个端部和所述第二互连的一个端部和第二电流源（48）的第一互连的另一端和所述第二互连的另一端之间设置之间设置。

5. 发明授权

EP1677420B1 Magnetic logic device and methods of manufacturing and operating the same 有权
标题翻译：相同的磁逻辑器件和用于制造和操作方法
公开(公告)号：EP1677420B1
公开(公告)日：2011-01-26
申请号：EP05257745.9
申请日：2005-12-15
申请人： Samsung Electronics Co., Ltd.
发明人： Kim, Sung-dong , Kim, Eun-sik , Jung, Ju-hwan , Ko, Hyoung-soo , Min, Dong-ki , Park, Hong-sik , Hong, Seung-bum,
IPC分类号： H03K19/18
CPC分类号： H03K19/16 , H01L43/08

6. 发明公开

EP1688940A3 Ferroelectric recording medium and writing method for the same 有权
标题翻译：它们的铁电记录介质和写入方法
公开(公告)号：EP1688940A3
公开(公告)日：2008-09-24
申请号：EP06250600.1
申请日：2006-02-03
申请人： Samsung Electronics Co., Ltd.
发明人： Ko, Hyoung-soo , Jung, Ju-hwan , Kim, Eun-sik , Kim, Sung-dong , Park, Hong-sik , Park, Chul-min, c/o Samsung Adv. Inst. of Techn. , Hong, Seung-bum, c/o 507-1305 Hayan Maeul
IPC分类号： G11B9/02
CPC分类号： G11B9/02 , G11C11/5657 , Y10S977/947
摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage, and a nonvolatile anisotrophic conduction layer formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multi bits can be expressed on one domain of the ferroelectric recording medium.

7. 发明公开

EP1517330A1 Method of writing data on storage device using probe technique 审中-公开
标题翻译： Datenschreibverfahren auf Speicheranordnung mittels Sondentechnik
公开(公告)号：EP1517330A1
公开(公告)日：2005-03-23
申请号：EP04255395.8
申请日：2004-09-06
申请人： Samsung Electronics Co., Ltd.
发明人： Hong, Seung-bum , Jung, Ju-hwan , Kim, Sung-dong , Min, Dong-ki , Park, Hong-sik , Baeck, Kyoung-lock , Park, Chul-min , Kim, Yun-seok
IPC分类号： G11C7/00 , G11C11/22 , G11B9/02 , G11B9/00
CPC分类号： B82Y10/00 , G11B9/02 , G11B9/14 , G11B9/1409 , G11B9/149 , G11B13/00 , G11B2005/0021
摘要： Provided is a method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, a heat and electric field are applied at the same time to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.
摘要翻译：提供了使用探针技术在存储装置上写入数据的方法。在包括用于读取和写入数据的电阻式探针的存储器件中写入数据的方法中，由电阻式探头写入数据的铁电写入介质和设置在铁电书写介质的底表面上的下电极通过向电阻探针和下电极施加电压，同时将热和电场施加到要写入数据的铁电写入介质的区域。

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