会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明公开
    • Thin film magnetic head
    • 薄膜磁头
    • EP0459426A2
    • 1991-12-04
    • EP91108743.5
    • 1991-05-28
    • SONY CORPORATION
    • Narisawa, Hiroaki, c/o SONY MAGNETIC PRODUCTS, INCSaito, Norio, c/o SONY MAGNETIC PRODUCTS, INCIshikawa, Wataru, c/o SONY MAGNETIC PRODUCTS, INCSato, Jin, c/o SONY MAGNETIC PRODUCTS, INCWatanabe, Takashi, c/o SONY MAGNETIC PRODUCTS, INC
    • G11B5/31
    • G11B5/3116G11B5/245
    • A thin film magnetic head has a lower magnetic layer (2) and an upper magnetic layer (3) formed over the lower magnetic layer (2) so that a small gap (FG) is formed between a magnetic gap section (D p ) of the lower magnetic layer (2) near a sliding surface to be brought into sliding contact with a magnetic recording medium and a magnetic gap section (3a) of the upper magnetic layer (3) extending in parallel to the magnetic gap section of the lower magnetic layer near the sliding surface. The the upper magnetic layer has a first sloping section (3b) extending from the magnetic gap section at an inclination ϑ₁ in a range defined by 2° ≦ ϑ₁ ≦ 25° to the upper surface of the lower magnetic layer (2), and a second sloping section (3c) extending from the first sloping section (3b) at an inclination ϑ₂ in a range defined by: 30° ≦ ϑ₂ ≦ 80° to the upper surface of the lower magnetic layer (2). Magnetic flux leaks across the lower magnetic layer (2) and the first inclined section (3b) of the upper magnetic layer (3), so that the magnetic saturation of the magnetic gap section (3a) of the upper magnetic layer (3) is prevented. Since the second sloping section (3c) is inclined at a large inclination, the overwrite characteristics is not deteriorated.
    • 薄膜磁头具有形成在下磁层(2)上的下磁层(2)和上磁层(3),从而在磁层(2)的磁隙部分(Dp)之间形成小间隙(FG) 下磁层(2)靠近滑动表面以与磁记录介质滑动接触,上磁层(3)的磁间隙部分(3a)平行于下磁层的磁间隙部分延伸 靠近滑动表面。 上磁层具有第一倾斜部分(3b)和第二倾斜部分(3b),该第一倾斜部分从磁隙部分以在由2°≤θ1≤25°限定的范围内的倾角θ1延伸到下磁层(2)的上表面, 第二倾斜部分(3c)从第一倾斜部分(3b)以一个由30°≤θ2≤80°限定的范围内的倾角θ2延伸到下磁层(2)的上表面。 磁通量泄漏穿过上磁层(3)的下磁层(2)和第一倾斜部分(3b),从而上磁层(3)的磁隙部分(3a)的磁饱和是 预防。 由于第二倾斜部分(3c)以大倾角倾斜,所以重写特性不会变差。