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1. 发明公开

EP2270849A3 Semiconductor Device and Manufacturing Method Thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：EP2270849A3
公开(公告)日：2017-09-06
申请号：EP10188106.8
申请日：2001-03-06
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yamazaki, Shunpei , Koyama, Jun , Suzawa, Hideomi , Ono, Koji , Arao, Tatsuya
IPC分类号： H01L29/423 , H01L29/49 , H01L29/786 , H01L27/12 , G02F1/1362 , G02F1/1345
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L2029/7863
摘要： The invention provides a semiconductor device comprising:
a semiconductor film over an insulating surface;
a gate insulating film over the semiconductor film; and
a gate electrode comprising:
a first conductive layer over the gate insulating film; and
a second conductive layer over the first conductive layer;
wherein the semiconductor film includes,
a channel forming region,
LDD regions in contact with the channel forming region,
a source region and a drain region in contact with the LDD regions,
wherein an end portion of the first conductive layer extends beyond an end portion of the second conductive layer,
wherein the LDD regions overlap the first conductive layer with the gate insulating film interposed therebetween,
wherein the second conductive layer has a tapered shape in the end portion of the second conductive layer in cross section,
wherein the first conductive layer comprises at least a first element selected from the group consisting of Ta, W, Ti, Mo, AI, and Cu and the second conductive layer comprises at least a second element selected from the group consisting of Ta, W, Ti, Mo, AI, and Cu, and wherein the first element is different from the second element.
摘要翻译：本发明提供了一种半导体器件，包括：绝缘表面上的半导体膜; 在半导体膜上的栅极绝缘膜; 以及栅电极，包括：在所述栅绝缘膜上的第一导电层; 以及在第一导电层上的第二导电层; 其中所述半导体膜包括沟道形成区，与所述沟道形成区接触的LDD区，与所述LDD区接触的源极区和漏极区，其中所述第一导电层的端部延伸超出所述LDD区的端部第二导电层，其中LDD区与第一导电层重叠，其间插入栅极绝缘膜，其中第二导电层在第二导电层的端部中具有锥形形状的横截面，其中第一导电层包括至少一种选自Ta，W，Ti，Mo，Al和Cu的第一元素，第二导电层至少包括选自Ta，W，Ti，Mo，Al，和Cu，并且其中第一元素不同于第二元素。

2. 发明授权

EP2515337B1 DRIVER CIRCUIT AND SEMICONDUCTOR DEVICE 有权
标题翻译： TREIBERSCHALTUNG UND HALBLEITERBAUELEMENT
公开(公告)号：EP2515337B1
公开(公告)日：2016-02-24
申请号：EP12005267.5
申请日：2009-12-09
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Koyama, Jun , Sakata, Junichiro , Maruyama, Tetsunori , Imoto, Yuki , Asano, Yuji , Koezuka, Junichi
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1225 , H01L27/127 , H01L28/20 , H01L29/24 , H01L29/78606 , H01L29/7869
摘要： The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH 4 ) and ammonia (NH 3 ) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.
摘要翻译：通过使用含有氢化合物如硅烷（SiH 4）和氨（NH 3）的气体的等离子体CVD形成的氮化硅层910与用于电阻器354的氧化物半导体层905直接接触，氮化硅层910设置在用于薄膜晶体管355的氧化物半导体层906上，氧化硅层909用作阻挡层。因此，与氧化物半导体层906相比，向氧化物半导体层905中引入更高浓度的氢。结果，使用于电阻器354的氧化物半导体层905的电阻比氧化物半导体层的电阻低 906用于薄膜晶体管355。

3. 发明授权

EP2264693B1 Display device and method of driving a display device 有权
标题翻译：显示设备和用于控制显示方法
公开(公告)号：EP2264693B1
公开(公告)日：2014-09-24
申请号：EP10009813.6
申请日：2002-04-16
申请人： Semiconductor Energy Laboratory Co, Ltd.
发明人： Koyama, Jun
IPC分类号： G09G3/32
CPC分类号： H01L51/5253 , G09G3/20 , G09G3/2022 , G09G3/2037 , G09G3/3266 , G09G3/3275 , G09G2300/0809 , G09G2300/0842 , G09G2320/0233 , G09G2330/02 , G09G2330/021 , G09G2340/0428 , G09G2360/18 , H01L27/3225 , H01L27/3248 , H01L27/3276 , H01L51/524

4. 发明授权

EP2275860B1 Wiring and sealing scheme for an active matrix display device 有权
标题翻译：对于有源矩阵类型的显示系统的密封和布线布置
公开(公告)号：EP2275860B1
公开(公告)日：2014-03-05
申请号：EP10182874.7
申请日：2001-07-25
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yamazaki, Shunpai , Koyama, Jun , Osame, Mitsuaki , Inukai, Kazutaka
IPC分类号： G02F1/1345 , G02F1/1339 , H01L51/52 , G02F1/13 , G02F1/1362 , H01L27/32
CPC分类号： G02F1/13454 , G02F1/1339 , G02F1/1345 , G02F1/13452 , H01L27/3276 , H01L51/524 , H01L51/5246

5. 发明授权

EP2138815B1 Photometric device 有权
标题翻译：光度Vorrichtung
公开(公告)号：EP2138815B1
公开(公告)日：2013-11-20
申请号：EP09163027.7
申请日：2009-06-18
申请人： Semiconductor Energy Laboratory Co, Ltd.
发明人： Koyama, Jun , Amano, Seiko
IPC分类号： G01J1/44 , H03F3/08
CPC分类号： G01J1/44 , G01J2001/4426 , H03F3/08
摘要： A photometric device with a wide dynamic range. The photometric device includes a constant current generation circuit (104), a fixed clock signal generation circuit (105) which generates a fixed clock signal having a fixed frequency, a photoelectric conversion element (100), a variable clock signal generation circuit (101), and a digital signal generation circuit (103). The fixed clock signal generation circuit generates a fixed clock signal that oscillates at a fixed frequency, from constant current. The variable clock signal generation circuit generates a variable clock signal that oscillates at a frequency proportional to the amount of photocurrent, from photocurrent generated in the photoelectric conversion element. The digital signal generation circuit sets a measurement period using the fixed clock signal, counts the number of pulses of the variable clock signal that oscillates for the measurement period, and outputs a digital signal including the count value as data.

6. 发明授权

EP1117085B1 EL display system 有权
标题翻译： EL显示系统
公开(公告)号：EP1117085B1
公开(公告)日：2013-10-30
申请号：EP01100997.4
申请日：2001-01-17
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Yamazaki, Shunpei , Koyama, Jun , Ishimaru, Noriko
IPC分类号： G09G3/30 , G09G3/32
CPC分类号： G09G3/3233 , G09G3/2022 , G09G3/30 , G09G5/10 , G09G2300/0426 , G09G2300/0809 , G09G2300/0842 , G09G2320/029 , G09G2320/043 , G09G2320/0626 , G09G2320/064 , G09G2320/0646 , G09G2330/021 , G09G2330/028 , G09G2354/00 , G09G2360/14 , G09G2360/144 , G09G2360/145

7. 发明授权

EP1310938B1 A light emitting device and electronic apparatus using the same 有权
标题翻译：发光装置和该电子装置用
公开(公告)号：EP1310938B1
公开(公告)日：2012-12-26
申请号：EP02021663.6
申请日：2002-09-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yamazaki, Shunpei , Koyama, Jun
IPC分类号： G09G3/32
CPC分类号： G09G3/3291 , G09G3/2022 , G09G3/3233 , G09G2300/0842 , G09G2310/0251 , G09G2310/027 , G09G2320/0233 , G09G2320/029 , G09G2320/043 , G09G2320/048 , G09G2360/18

8. 发明授权

EP2202802B1 Driver circuit and semiconductor device 有权
标题翻译：驱动电路及半导体装置
公开(公告)号：EP2202802B1
公开(公告)日：2012-09-26
申请号：EP09178444.7
申请日：2009-12-09
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Koyama, Jun , Sakata, Junichiro , Maruyama, Tetsunori , Imoto, Yuki , Asano, Yuji , Koezuka, Junichi
IPC分类号： H01L27/06 , H01L27/12 , H01L21/77 , H01L29/786
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1225 , H01L27/127 , H01L28/20 , H01L29/24 , H01L29/78606 , H01L29/7869
摘要： The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH 4 ) and ammonia (NH 3 ) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

9. 发明公开

EP2426669A1 Signal processing unit with reduced power consumption and method for driving the same 有权
标题翻译： Signalverarbeitungsschaltung mit reduziertem Energieverbrauch und Ansteuerverfahrendafür
公开(公告)号：EP2426669A1
公开(公告)日：2012-03-07
申请号：EP11179033.3
申请日：2011-08-26
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Koyama, Jun , Yamazaki, Shunpei
IPC分类号： G11C14/00
CPC分类号： G11C14/0054 , G11C14/00 , G11C14/0009 , H01L27/0629
摘要： An object is to provide a signal processing circuit which can be manufactured without a complex manufacturing process and suppress power consumption. A storage element (100) includes two logic elements (referred to as a first phase-inversion element (101) and a second phase-inversion element (102)) which invert a phase of an input signal (IN) and output the signal, a first selection transistor (103), and a second selection transistor (104). In the storage element, two pairs each having a transistor in which a channel is formed in an oxide semiconductor layer and a capacitor (a pair of a first transistor (112) and a first capacitor (122), and a pair of a second transistor (111) and a second capacitor (121)) are provided. The storage element is used in a storage device such as a register or a cache memory included in a signal processing circuit. Reduction of power consumption is achieved by deactivating said first and second transistors.
摘要翻译：本发明的目的是提供一种信号处理电路，其可以在没有复杂的制造工艺的情况下制造并且抑制功耗。存储元件（100）包括反转输入信号（IN）的相位并输出信号的两个逻辑元件（称为第一相位反转元件（101）和第二相位反转元件（102）），第一选择晶体管（103）和第二选择晶体管（104）。在存储元件中，每对具有在氧化物半导体层中形成沟道的晶体管和电容器（一对第一晶体管（112）和第一电容器（122））以及一对第二晶体管（111）和第二电容器（121））。存储元件用于诸如信号处理电路中包括的寄存器或高速缓冲存储器的存储设备中。通过停用所述第一和第二晶体管来实现功耗的降低。

10. 发明授权

EP1713054B1 Electroluminescent display device and driving method thereof 有权
标题翻译：致发光显示装置及其驱动方法
公开(公告)号：EP1713054B1
公开(公告)日：2011-08-10
申请号：EP06015515.7
申请日：2000-09-22
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Koyama, Jun
IPC分类号： G09G3/32
CPC分类号： H01L27/1214 , G09G3/2022 , G09G3/30 , G09G3/3233 , G09G3/3258 , G09G3/3291 , G09G2300/0408 , G09G2300/0809 , G09G2300/0842 , G09G2320/0242 , G09G2320/043 , H01L27/12 , H01L27/3211 , H01L27/3262
摘要： An EL display device which can display vivid images with a good balance of the brightnesses of emitted red color, blue color, and green color light is provided. The EL display device has a plurality of pixels each containing EL elements respectively, and the EL display device performs gradation display by controlling the time during which the plurality of EL elements emit light. The EL display device is characterized in that a voltage applied to each of the EL elements differs depending upon the color displayed by the plurality of pixels each containing the EL elements respectively.

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