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1. 发明公开

EP0788167A3 Semiconductor radial rays detecting with a reading condenser 失效
标题翻译： Halbleiterdetektor von radialen Strahlungen mit einem Auslesekapazitor
公开(公告)号：EP0788167A3
公开(公告)日：1998-03-11
申请号：EP97105410.1
申请日：1993-03-22
申请人： SEIKO INSTRUMENTS INC.
发明人： Saito, Yutaka , Kojima, Yoshikazu
IPC分类号： H01L27/146
CPC分类号： H01L27/14658 , H01L27/14643 , H01L27/14681
摘要： The present invention relates to a semiconductor radiation detector comprising:
a first terminal ; a first voltage bias resistance (114) connected electrically to the first terminal; a second terminal; a second voltage bias resistance (114) connected electrically to the second terminal; a voltage bias from a power source applied to the first and second terminal; an image sensor for sensing photons and radiation in a semiconductor substrate having a first conductivity type, the image sensor coupled with the first terminal through the first voltage bias resistance (114) and coupled with the second terminal through the second voltage bias resistance (114) ; a first reading condenser for reading out a current generating from the image sensor as a first signal; a second reading condenser for reading out a current generating from the image sensor as a second signal; a fifth terminal for reading out the first signal coupled with a third terminal through the first reading condenser; and a sixth terminal for reading out the signal coupled with a fourth terminal through the second reading condenser .
摘要翻译：提供半导体径向射线检测器，其提高半导体径向射线检测器的栅极绝缘膜的击穿电压产生，并防止由于击穿电压产量的提高而引起的栅电极的电阻增加。在本发明的半导体径向射线检测器中，用作读取电容器的栅电极1的材料不是A 1膜（铝膜），而是POLY Si膜（多晶硅膜），或者包含硅化物的硅化物或金属熔融点如WSi（硅化钨）（严格地，其组成如WxSiy所表示的不定）或TiSi（硅化钛）（以相同的方式表示为TixSi）。此外，通过作为布线用绝缘膜的绝缘膜4在栅电极1上设置接触孔2，并且在接触孔上设置有耦合到输出端子的A 1电极3。

2. 发明公开

EP0749196A3 Power unit and electronic equipment comprising the same 失效
标题翻译： Stromversorgungsanlage und diese enthaltende elektronische Einrichtung
公开(公告)号：EP0749196A3
公开(公告)日：1997-07-30
申请号：EP96301188.7
申请日：1996-02-22
申请人： SEIKO INSTRUMENTS INC.
发明人： Saito, Yutaka , Shinogi, Masataka , Kato, Kenji
IPC分类号： H02K7/18
CPC分类号： H02K7/1004 , H01M2/1044 , H01M10/42 , H01M10/46 , H02K3/26 , H02K3/28 , H02K7/12 , H02K7/1853 , H02K19/22 , H02N1/08 , H02P9/305 , H02P2101/10
摘要： It comprises an input means (103) for inputting kinetic energy or force and converting it into a rotary motion, a gear train mechanism (106) for increasing a speed of the rotary motion, a generator (104) for converting the kinetic energy of the rotary motion whose speed has been increased into electricity, an electrical control circuit (105) for stabilising voltage and current of the generator and a secondary cell (110) for charging and discharging electricity. The speed-increasing multiplying factor is from 50 times to 100 times.
摘要翻译：它包括用于输入动能或力并将其转换成旋转运动的输入装置（103），用于增加旋转运动速度的齿轮系机构（106），用于转换旋转运动的动能的发电机（104）速度已经增加的旋转运动，用于稳定发电机的电压和电流的电气控制电路（105）和用于充电和放电的二次电池（110）。增速倍增系数为50倍至100倍。

3. 发明公开

EP0573921A2 Semiconductor device having a semiconductor film of low oxygen concentration 失效
标题翻译： Halbleiteranordnung die eine mit niedriger Oxygenkonzentration-Halbleiterschichtenthält。
公开(公告)号：EP0573921A2
公开(公告)日：1993-12-15
申请号：EP93109060.9
申请日：1993-06-04
申请人： SEIKO INSTRUMENTS INC.
发明人： Saito, Yutaka
IPC分类号： H01L29/16
CPC分类号： H01L21/76251 , H01L21/76264 , H01L21/76275 , H01L21/76286 , H01L21/76289 , H01L27/12 , H01L27/1203 , H01L29/16 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A semiconductor device is provided wherein carrier flows in a monocrystal silicon film having low oxygen concentration. As for a structure of the semiconductor device, a single semiconductor element or a plurality of semiconductor elements are provided on the monocrystal silicon film having low oxygen concentration which is provided on a backing substrate of which at least the surface is made of an insulating material. The backing substrate is provided so that the semiconductor device gets mechanical destructive strength. The insulating material is provided so that some particles never transfers from the backing substrate to the semiconductor film. The silicon film has low oxygen concentration so that the lifetime of a minor carrier lengthens.
摘要翻译：提供了一种半导体器件，其中载体在具有低氧浓度的单晶硅膜中流动。对于半导体器件的结构，在具有低氧浓度的单晶硅膜上设置单个半导体元件或多个半导体元件，其设置在至少表面由绝缘材料制成的背衬基板上。提供背衬基板，使得半导体器件获得机械破坏强度。提供绝缘材料，使得一些颗粒不会从背衬基板转移到半导体膜。硅膜具有低氧浓度，使得次载体的寿命延长。

4. 发明公开

EP0788167A2 Semiconductor radial rays detecting with a reading condenser 失效
标题翻译： Halbleiterdetektor von radialen Strahlungen mit einem Auslesekapazitor
公开(公告)号：EP0788167A2
公开(公告)日：1997-08-06
申请号：EP97105410.1
申请日：1993-03-22
申请人： SEIKO INSTRUMENTS INC.
发明人： Saito, Yutaka , Kojima, Yoshikazu
IPC分类号： H01L27/146
CPC分类号： H01L27/14658 , H01L27/14643 , H01L27/14681
摘要： The present invention relates to a semiconductor radiation detector comprising:

a first terminal ;
a first voltage bias resistance (114) connected electrically to the first terminal;
a second terminal;
a second voltage bias resistance (114) connected electrically to the second terminal;
a voltage bias from a power source applied to the first and second terminal;
an image sensor for sensing photons and radiation in a semiconductor substrate having a first conductivity type, the image sensor coupled with the first terminal through the first voltage bias resistance (114) and coupled with the second terminal through the second voltage bias resistance (114) ;
a first reading condenser for reading out a current generating from the image sensor as a first signal;
a second reading condenser for reading out a current generating from the image sensor as a second signal;
a fifth terminal for reading out the first signal coupled with a third terminal through the first reading condenser; and
a sixth terminal for reading out the signal coupled with a fourth terminal through the second reading condenser .
摘要翻译：本发明涉及一种半导体辐射检测器，包括：第一端子; 与第一端子电连接的第一电压偏置电阻（114）; 第二个终端; 与第二端子电连接的第二电压偏置电阻（114）; 来自施加到所述第一和第二端子的电源的电压偏置; 用于感测具有第一导电类型的半导体衬底中的光子和辐射的图像传感器，所述图像传感器通过所述第一电压偏置电阻（114）与所述第一端子耦合并且通过所述第二电压偏置电阻（114）与所述第二端子耦合， ; 用于读出从图像传感器产生的电流作为第一信号的第一读取电容器; 第二读取电容器，用于读出从图像传感器产生的电流作为第二信号; 第五端子，用于通过第一读取电容器读出与第三端子耦合的第一信号; 以及第六端子，用于通过第二读取电容器读出与第四端子耦合的信号。

5. 发明公开

EP0749196A2 Power unit and electronic equipment comprising the same 失效
标题翻译：功率调节和包含该电子设备
公开(公告)号：EP0749196A2
公开(公告)日：1996-12-18
申请号：EP96301188.7
申请日：1996-02-22
申请人： SEIKO INSTRUMENTS INC.
发明人： Saito, Yutaka , Shinogi, Masataka , Kato, Kenji
IPC分类号： H02K7/18
CPC分类号： H02K7/1004 , H01M2/1044 , H01M10/42 , H01M10/46 , H02K3/26 , H02K3/28 , H02K7/12 , H02K7/1853 , H02K19/22 , H02N1/08 , H02P9/305 , H02P2101/10
摘要： It comprises an input means (103) for inputting kinetic energy or force and converting it into a rotary motion, a gear train mechanism (106) for increasing a speed of the rotary motion, a generator (104) for converting the kinetic energy of the rotary motion whose speed has been increased into electricity, an electrical control circuit (105) for stabilising voltage and current of the generator and a secondary cell (110) for charging and discharging electricity. The speed-increasing multiplying factor is from 50 times to 100 times.

6. 发明公开

EP0573921A3 Semiconductor device having a semiconductor film of low oxygen concentration 失效
标题翻译：具有低氧浓度的半导体膜的半导体器件
公开(公告)号：EP0573921A3
公开(公告)日：1994-09-28
申请号：EP93109060.9
申请日：1993-06-04
申请人： SEIKO INSTRUMENTS INC.
发明人： Saito, Yutaka
IPC分类号： H01L29/16
CPC分类号： H01L21/76251 , H01L21/76264 , H01L21/76275 , H01L21/76286 , H01L21/76289 , H01L27/12 , H01L27/1203 , H01L29/16 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A semiconductor device is provided wherein carrier flows in a monocrystal silicon film having low oxygen concentration. As for a structure of the semiconductor device, a single semiconductor element or a plurality of semiconductor elements are provided on the monocrystal silicon film having low oxygen concentration which is provided on a backing substrate of which at least the surface is made of an insulating material. The backing substrate is provided so that the semiconductor device gets mechanical destructive strength. The insulating material is provided so that some particles never transfers from the backing substrate to the semiconductor film. The silicon film has low oxygen concentration so that the lifetime of a minor carrier lengthens.

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