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1. 发明授权

EP1035757B1 SUBSTRATE ELECTRODE PLASMA GENERATOR AND SUBSTANCE/MATERIAL PROCESSING METHOD 有权
标题翻译：随着对物质/材料处理基体导线和方法等离子发生器
公开(公告)号：EP1035757B1
公开(公告)日：2008-04-09
申请号：EP99944818.6
申请日：1999-09-24
申请人： Seiko Epson Corporation , Terashima, Kazuo
发明人： TERASHIMA, Kazuo , SEKI, Shunichi , SHIMODA, Tatsuya , IZAKI, Takeshi
IPC分类号： H05H1/24 , H05H1/46 , H01L21/3065 , C23C16/50 , H01J37/32
CPC分类号： C23C14/185 , H05H1/48
摘要： A substrate electrode plasma generator comprising an array of a pair of fine-gap, thin-film electrodes (1, 2, 4) formed by sputter-depositing tungsten on a surface-oxidized silicon substrate (5) followed by dry etching.

2. 发明公开

EP1035757A1 SUBSTRATE ELECTRODE PLASMA GENERATOR AND SUBSTANCE/MATERIAL PROCESSING METHOD 有权
标题翻译：随着对物质/材料处理基体导线和方法等离子发生器
公开(公告)号：EP1035757A1
公开(公告)日：2000-09-13
申请号：EP99944818.6
申请日：1999-09-24
申请人： SEIKO EPSON CORPORATION , Terashima, Kazuo
发明人： TERASHIMA, Kazuo , SEKI, Shunichi , SHIMODA, Tatsuya , IZAKI, Takeshi
IPC分类号： H05H1/24 , H05H1/46 , H01L21/3065 , C23C16/50
CPC分类号： C23C14/185 , H05H1/48
摘要： The substrate electrode plasma generating apparatus is constituted of an array of small gap thin film electrode pairs 1, 2, 3, and 4 formed by sputtering and dry etching tungsten on a silicon substrate 5 with an oxidized surface.

3. 发明授权

EP1145335B1 MULTIPLE-WAVELENGTH LIGHT EMITTING DEVICE 有权
标题翻译：设备用于发光多波长
公开(公告)号：EP1145335B1
公开(公告)日：2010-11-03
申请号：EP00953304.3
申请日：2000-08-14
申请人： Seiko Epson Corporation , Cambridge Display Technology Limited
发明人： SHIMODA, Tatsuya , KOYAMA, Tomoko , KANEKO, Takeo , BURROUGHES, Jeremy H. Cambridge Dis. Tech., Ltd.
IPC分类号： H01L51/52
CPC分类号： H01L51/5036 , H01L27/3211 , H01L51/5265
摘要： An efficient multiple-wavelength light emitting device is provided. This multiple-wavelength light emitting device comprises a light emitting layer (4) for emitting light containing wavelength components to be output, a negative electrode (5) that is positioned at the back surface of the light emitting layer and that transmits at least a portion of the light, reflecting layers (7R, 7G, and 7B), positioned at the back surface of the negative electrode, for reflecting, of the light emitted through the negative electrode to the back surface, light having specific wavelengths, which reflecting layers are stacked up in order perpendicularly to the light axis, in correspondence with the wavelengths of the light to be reflected, thus configuring a reflecting layer group (7). In the direction perpendicular to the light axis, divisions are made in any of at least two or more light emission regions which reflect light of different wavelengths. In each light emission region, the distance between the reflecting surface of the reflecting layer (7) on the semi-transparent side and the reflecting surface in the semi-reflecting layer (2) is adjusted in this configuration so that it becomes a resonating optical path length for the light that is emitted in the light emission region.

4. 发明授权

EP1115156B1 Method of manufacturing a ferroelectric memory device 有权
标题翻译：一种制造铁电存储器件的方法
公开(公告)号：EP1115156B1
公开(公告)日：2009-08-26
申请号：EP00935527.2
申请日：2000-06-02
申请人： Seiko Epson Corporation
发明人： SHIMODA, Tatsuya , NISHIKAWA, Takao
IPC分类号： H01L27/10 , H01L27/108 , H01L21/8242 , H01L21/02 , H01L21/033 , H01L21/316 , H01L21/8246 , H01L27/115
CPC分类号： H01L27/11502 , H01L21/0337 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： A method including a step of forming a first region (24) on which the material of a member of a ferroelectric capacitor section is easily deposited and a second region (26) on which the material for forming the ferroelectric capacitor section is less easily deposited than the first region (24), in the surface of a substrate (10) on which a transistor is formed, and a step of supplying materials to the substrate (10), and forming a first electrode (32), a ferroelectric film (34), and a second electrode (36) in the first region (24).

5. 发明授权

EP1113502B1 METHOD OF MANUFACTURING THIN-FILM TRANSISTOR 有权
标题翻译：方法操作部门的薄膜场效应晶体管
公开(公告)号：EP1113502B1
公开(公告)日：2007-09-19
申请号：EP00912943.8
申请日：2000-03-29
申请人： SEIKO EPSON CORPORATION
发明人： YUDASAKA, Ichio , SHIMODA, Tatsuya , SEKI, Shunichi
IPC分类号： H01L29/786 , H01L21/336 , H01L21/208 , H01L21/316 , H01L21/288 , G02F1/1368
CPC分类号： H01L29/66757 , H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/02422 , H01L21/02532 , H01L21/02628 , H01L21/3124 , H01L21/31695
摘要： All or part of thin film, such as silicon film, insulating film and a conducting film, which composes a thin-film transistor are formed using liquid materials. Coating of liquid material on a substrate is heat-treated to form desired thin film.

6. 发明公开

EP1143772A1 LARGE EL PANEL AND PRODUCTION METHOD THEREFOR 审中-公开
标题翻译： GRESSE EL-ANZEIGE UND DEREN HERSTELLUNG
公开(公告)号：EP1143772A1
公开(公告)日：2001-10-10
申请号：EP00961233.4
申请日：2000-09-26
申请人： SEIKO EPSON CORPORATION
发明人： SHIMODA, Tatsuya , NISHIKAWA, Takao
IPC分类号： H05B33/12 , H05B33/10 , H05B33/14 , G09F9/40 , G09F9/30
CPC分类号： H01L27/3293 , G09F9/313 , H01L27/3244
摘要： A circuit section 22C of a TFT layer 22 is disposed behind an adjacent EL display device 14, so that the gap between pixels at the peripheries of the adjacent EL display devices 14 may be 10 µm. Thus, four EL display devices 14 appear to be unified, forming the large EL display panel 10. In addition, in the case in which a plurality of EL display devices are arranged in a matrix pattern, the pitch between the pixels provided in the pixel section of the TFT array is maintained constant.
摘要翻译： TFT层22的电路部22C设置在相邻的EL显示装置14的后方，使得相邻的EL显示装置14的周边的像素间的间隔可以为10μm。因此，四个EL显示装置14似乎是统一的，形成大的EL显示面板10.此外，在多个EL显示装置以矩阵图形排列的情况下，像素中提供的像素之间的间距 TFT阵列的截面保持恒定。

7. 发明公开

EP0974913A1 INFORMATION PROCESSING SYSTEM, ENCIPHERING/DECIPHERING SYSTEM, SYSTEM LSI, AND ELECTRONIC APPARATUS 有权
标题翻译：信息处理系统，扩音/加密系统，系统LSI和电子设备
公开(公告)号：EP0974913A1
公开(公告)日：2000-01-26
申请号：EP98959154.0
申请日：1998-12-10
申请人： Seiko Epson Corporation
发明人： AMANO, Kazuhiko , NAKAMURA, Tsugio , KASAHARA, Hiroshi , SHIMODA, Tatsuya
IPC分类号： G06F17/10 , G06F7/22 , G09C1/00
CPC分类号： G06F7/57 , G06F7/535 , G06F7/723 , G06F21/72 , G06F2207/3816 , G06F2207/5353 , G06F2221/2149
摘要： An information processing system that is configured in such a manner that computational processing is performed on input data in accordance with a processing sequence, for outputting data, comprises: a plurality of arithmetic units (7-1 to 7-x), each computing at an arithmetic precision 2 m bits (where m is a natural number) based on the processing sequence; and a plurality of cascade connection terminals for cascading these arithmetic units each other. When the maximum arithmetic precision that is required during computational processing is 2 n bits (where n is a natural number and is fixed), x numbers of (where x is a natural number) the arithmetic units are cascaded in a manner such that the inequality x ≥ 2 n /2 m is satisfied. When an arithmetic precision of 2 n1 bits (where n1 ≤ n, and n1 is variable) is necessary during computational processing, x1 numbers of the arithmetic units are cascaded in a manner such that the inequality x1 ≥ 2 n1 /2 m (where x1 is a natural number and is variable) is satisfied. This makes it possible to easily implement an information processing system for performing computations to any desired precision in a hardware manner, and also makes it possible to support a simple hardware-based method of expanding the arithmetic precision.
摘要翻译： 1。一种信息处理系统，其特征在于，按照处理顺序对输入数据进行计算处理并输出数据，其特征在于，具备：多个运算部（7-1〜7-x），分别计算基于处理序列的算术精度2m比特（其中m是自然数）; 以及用于将这些运算单元彼此级联的多个级联连接端子。当在计算处理期间所需的最大计算精度是2n位（其中n是自然数并且是固定的）时，x个（其中x是自然数）算术单元以这样的方式级联，即不等式x 满足≥2n/ 2m。当在计算处理期间需要2n1位（其中n1≤n且n1是可变的）的算术精度时，将x1个算术单元级联以使得不等式x1≥2n1/ 2m（其中x1是自然的数量并且是可变的）得到满足。这使得可以容易地实现用于以硬件方式以任何期望的精度执行计算的信息处理系统，并且还使得可以支持扩展计算精度的简单的基于硬件的方法。

8. 发明授权

EP0302947B1 RARE EARTH ELEMENT-IRON BASE PERMANENT MAGNET AND PROCESS FOR ITS PRODUCTION 失效
标题翻译：稀土铁系永磁体和它的制造工艺。
公开(公告)号：EP0302947B1
公开(公告)日：1994-06-08
申请号：EP88902228.1
申请日：1988-03-01
申请人： SEIKO EPSON CORPORATION
发明人： AKIOKA, Koji , KOBAYASHI, Osamu , SHIMODA, Tatsuya
IPC分类号： H01F1/04 , C22C38/16 , C21D6/00
CPC分类号： C21D8/1216 , B22F9/023 , B22F9/16 , B22F2998/00 , C21D6/00 , C22C1/0441 , C22C38/005 , C22C38/10 , C22C38/16 , H01F1/0576 , H01F41/0293
摘要： A rare earth element-iron base permanent magnet and a process for its production are disclosed. The permanent magnet is produced by hot working of cast ingot prepared by melting and casting an alloy comprising at least one of rare earth metals represented by R, and Fe, B, and Cu at 500°C or above and has fine and magnetically anisotripic crystal particles. The process for its production comprises hot working of cast ingot obtained by melting and casting said alloy at 500°C or above. This process affords a permanent magnet having magnetic properties equivalent or superior to those of a permanent magnet produced by sintering which has been believed to have the best magnetic properties in a simplified manner, thus providing a permanent magnet with high performances inexpensively. In addition, heat treatment of the cast ingot obtained by melting and casting the aloy at 250°C or above, yields an isotropic rare earth earth element-iron base permanent magnet.

9. 发明公开

EP1548833A1 FERROELECTRIC MEMORY AND ITS MANUFACTURING METHOD 审中-公开
标题翻译： FERROELEKTRISCHER SPEICHER UND VERFAHREN ZU SEINER HERSTELLUNG
公开(公告)号：EP1548833A1
公开(公告)日：2005-06-29
申请号：EP03788099.4
申请日：2003-08-13
申请人： SEIKO EPSON CORPORATION
发明人： NATORI, Eiji , SHIMODA, Tatsuya , KIJIMA, Takeshi
IPC分类号： H01L27/105 , H01L27/12
CPC分类号： H01L25/0657 , G11C11/22 , H01L21/6835 , H01L21/84 , H01L24/73 , H01L25/50 , H01L27/105 , H01L27/11502 , H01L27/1203 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2224/83192 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2225/06568 , H01L2225/06572 , H01L2924/01012 , H01L2924/01077 , H01L2924/01078 , H01L2924/19041 , H01L2924/00 , H01L2924/00012
摘要： A ferroelectric memory includes a substrate and a sheet-shaped device formed over the substrate through an adhesive layer. The sheet-shaped device includes a memory cell array in which a ferroelectric layer is disposed at least in intersecting regions of a plurality of lower electrodes and a plurality of upper electrodes which are formed in the shape of lines, and a peripheral circuit section for the memory cell array.
摘要翻译：铁电存储器包括通过粘合剂层在衬底上形成的衬底和片状器件。片状装置包括其中铁电层至少设置在形成为线状的多个下电极和多个上电极的交叉区域中的存储单元阵列，以及用于存储单元阵列。

10. 发明授权

EP0969701B1 ELECTROLUMINESCENT DEVICE 有权
标题翻译：电致发光器件
公开(公告)号：EP0969701B1
公开(公告)日：2005-05-04
申请号：EP98938898.8
申请日：1998-08-19
申请人： SEIKO EPSON CORPORATION
发明人： KOBAYASHI, Hidekazu , KIGUCHI, Hiroshi , SHIMODA, Tatsuya
IPC分类号： H05B33/22 , H05B33/10 , H01L27/00
CPC分类号： H05B33/26 , H01L27/3283 , H01L51/5221 , H01L51/5281 , H05B33/10
摘要： A color passive-matrix electroluminescent device that produces vivid colors and is easily manufactured with a simple process, wherein a bank (4) required for making an organic film with an ink jet head is formed perpendicularly to an anode (6) and is used to pattern a cathode (1). The patterning of the cathode is performed without increasing the number of process steps, which in turn allows the manufacture of a full-color passive-matrix electroluminescent device at low cost.

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