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1. 发明授权

EP2415077B1 OPTOELEKTRONISCHES BAUELEMENT 有权
公开(公告)号：EP2415077B1
公开(公告)日：2017-10-11
申请号：EP10706666.4
申请日：2010-03-05
申请人： OSRAM Opto Semiconductors GmbH
发明人： RAMCHEN, Johann , ZITZLSPERGER, Michael
IPC分类号： H01L33/62 , H01L31/0203 , H01L31/02 , H01L27/146 , H01L33/54 , H01L33/48 , H01L23/00
CPC分类号： H01L33/62 , H01L24/34 , H01L24/37 , H01L27/14618 , H01L31/02002 , H01L31/0203 , H01L33/486 , H01L33/54 , H01L2224/37599 , H01L2924/00014 , H01L2924/01322 , H01L2924/12036 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/37099

2. 发明授权

EP2510558B1 OPTOELEKTRONISCHES HALBLEITERBAUTEIL 有权
公开(公告)号：EP2510558B1
公开(公告)日：2019-06-26
申请号：EP10788035.3
申请日：2010-11-17
申请人： OSRAM Opto Semiconductors GmbH
发明人： KRÄUTER, Gertrud , BARCHMANN, Bernd , BERGENEK, Krister , RAMCHEN, Johann , ZITZLSPERGER, Michael
IPC分类号： H01L33/56 , H01L33/50

3. 发明授权

EP2593973B1 OPTOELEKTRONISCHES HALBLEITERBAUTEIL 有权
标题翻译：光电子半导体元件
公开(公告)号：EP2593973B1
公开(公告)日：2017-11-22
申请号：EP11725748.5
申请日：2011-06-16
申请人： OSRAM Opto Semiconductors GmbH
发明人： SCHNEIDER, Markus , RACZ, David , RAMCHEN, Johann
IPC分类号： H01L33/60 , H01L33/46 , H01L33/50 , H01L33/62 , H01L33/56 , H01L33/20
CPC分类号： H01L33/60 , H01L33/20 , H01L33/46 , H01L33/50 , H01L33/56 , H01L33/62 , H01L2224/48227 , H01L2224/48465 , H01L2924/1715 , H01L2924/3025 , H01L2924/00

4. 发明公开

EP2619810A1 ELEKTRONISCHES BAUELEMENT 有权
标题翻译：电子元件
公开(公告)号：EP2619810A1
公开(公告)日：2013-07-31
申请号：EP11745979.2
申请日：2011-08-19
申请人： OSRAM Opto Semiconductors GmbH
发明人： RAMCHEN, Johann , KEITH, Christina , BRAUNE, Bert
IPC分类号： H01L33/54 , H01L33/56 , H01L33/58
CPC分类号： H01L33/641 , H01L31/0203 , H01L33/56 , H01L33/58 , H01L2224/73265 , H01L2224/48091 , H01L2924/00014
摘要： The invention relates to an electronic component having a housing body (1) which comprises a semiconductor chip (3) in a recess (10), wherein the semiconductor chip (3) in the recess is embedded in a casting compound (6) made of a first plastic material having a first glass transition temperature, a cover element (8) made of a second plastic material having a second glass transition temperature is arranged above the recess (10), and the second glass transition temperature is lower than the first glass transition temperature.

5. 发明授权

EP2606514B1 OPTOELEKTRONISCHES HALBLEITERBAUELEMENT 有权
标题翻译：光电子半导体元件
公开(公告)号：EP2606514B1
公开(公告)日：2018-01-17
申请号：EP11752154.2
申请日：2011-08-18
申请人： Osram Opto Semiconductors Gmbh
发明人： ZITZLSPERGER, Michael , RAMCHEN, Johann
IPC分类号： F21K9/00 , H01L33/64 , F21V29/85 , H01L33/62 , H01L33/48
CPC分类号： F21K9/00 , F21V29/85 , H01L33/486 , H01L33/62 , H01L33/64 , H01L2224/48247 , H01L2224/48471 , H01L2924/00 , H01L2224/48227

6. 发明公开

EP2619809A2 OPTOELEKTRONISCHES HALBLEITERBAUELEMENT 失效
公开(公告)号：EP2619809A2
公开(公告)日：2013-07-31
申请号：EP11760480.1
申请日：2011-09-21
申请人： OSRAM Opto Semiconductors GmbH
发明人： SCHNEIDER, Markus , RAMCHEN, Johann , WITTMANN, Michael
IPC分类号： H01L33/52 , H01L25/075 , H01L25/16 , H01L33/62 , H01L33/56 , H01L33/60
CPC分类号： H01L33/08 , H01L24/24 , H01L25/0753 , H01L25/167 , H01L33/505 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/48227 , H01L2224/48471 , H01L2224/48479 , H01L2924/00014 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2224/48091 , H01L2924/00012 , H01L2924/00 , H01L2224/4554
摘要： An optoelectronic semiconductor device is provided, comprising - a substrate (1), which has an upper side (11) and, opposite from the upper side (11), an underside (12); - at least one radiation-emitting semiconductor component (2) which is arranged on the upper side (11) and has a radiation-exiting area (6), through which at least part of the electromagnetic radiation of the semiconductor component (2) generated during the operation of the semiconductor component (2) leaves, and - a radiation-absorbing layer (3), which is designed to absorb ambient light impinging on the device (100) in such a way that an outer surface (101) of the device (100) that is facing away from the substrate (1) appears black, at least in certain places, wherein - the radiation-absorbing layer (3) completely encloses the radiation-emitting semiconductor component (2) in the lateral direction (L) and is in direct contact, at least in certain places, with side faces (23) of the radiation-emitting semiconductor component (2), and - the radiation-exiting area (6) is free from the radiation-absorbing layer (3).
摘要翻译：光电子半导体部件包括具有与上侧相反的上侧和下侧的载体。至少一个辐射发射半导体器件设置在上侧并且具有辐射发射表面，通过该辐射发射表面在半导体器件的操作期间产生的电磁辐射的至少一部分离开半导体器件。放射线吸收层被布置成吸收撞击在部件上的环境光，使得远离载体的部件的外表面至少在某些地方看起来是黑色的。

7. 发明公开

EP2617070A1 OPTOELEKTRONISCHES BAUELEMENT UND VERFAHREN ZU DESSEN HERSTELLUNG 审中-公开
公开(公告)号：EP2617070A1
公开(公告)日：2013-07-24
申请号：EP11755034.3
申请日：2011-08-22
申请人： OSRAM Opto Semiconductors GmbH
发明人： WEIDNER, Karl , RAMCHEN, Johann , KALTENBACHER, Axel , WEGLEITER, Walter , BARCHMANN, Bernd
IPC分类号： H01L33/38 , H01L33/54 , H01L33/60 , H01L33/62 , H01L23/055
CPC分类号： H01L33/60 , H01L23/055 , H01L24/18 , H01L24/24 , H01L24/82 , H01L33/505 , H01L33/54 , H01L33/62 , H01L2224/24 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244
摘要： An optoelectronic component is specified, comprising a carrier (3), which has a first (1) and a second connection region (2), and comprising a radiation-emitting semiconductor chip (4), which has a base surface (5) and a radiation exit surface (6), opposite the base surface, wherein the semiconductor chip (4) is arranged by the base surface (5) on the carrier (3). Furthermore, the optoelectronic component comprises a housing (10) having a lower housing part (8), which adjoins side flanks (14) of the semiconductor chip (4), and an upper housing part (9), which forms a reflector (15) for the radiation (16) emitted by the semiconductor chip (4). An electrical connection layer (7) is led from the radiation exit surface (6) of the semiconductor chip (4) via a part of the interface (19) between the lower (8) and the upper housing part (9) and through the lower housing part (8) to the first connection region (1) on the carrier (3). An advantageous method for producing the optoelectronic component is furthermore specified.
摘要翻译：本发明涉及一种光电子器件，包括具有第一连接区域（1）和第二连接区域（2）的载体（3），并且包括发射辐射的半导体芯片（4），其具有基底表面（5）和与底面相对的辐射出射面（6），其中半导体芯片（4）由底面（5）布置在载体（3）上。此外，光电子器件包括具有邻接半导体芯片（4）的侧面（14）的下壳体部件（8）和形成反射器（15）的上壳体部件（9）的壳体（10））用于由半导体芯片（4）发射的辐射（16）。电连接层（7）从半导体芯片（4）的辐射出射表面（6）经由下部壳体部分（8）和上部壳体部分（9）之间的界面（19）的一部分并且通过下壳体部分（8）与载体（3）上的第一连接区域（1）连接。此外规定了用于制造光电子器件的有利方法。

8. 发明公开

EP2606514A1 OPTOELEKTRONISCHES HALBLEITERBAUELEMENT 有权
公开(公告)号：EP2606514A1
公开(公告)日：2013-06-26
申请号：EP11752154.2
申请日：2011-08-18
申请人： Osram Opto Semiconductors Gmbh
发明人： ZITZLSPERGER, Michael , RAMCHEN, Johann
IPC分类号： H01L33/48 , H01L33/62
CPC分类号： F21K9/00 , F21V29/85 , H01L33/486 , H01L33/62 , H01L33/64 , H01L2224/48247 , H01L2224/48471 , H01L2924/00 , H01L2224/48227
摘要： The invention relates to an optoelectronic semi-conductor component comprising a substrate (1) that has an upper side (12) and an under side (11) lying opposite said upper side (12), said substrate (1) being formed with an electrically conductive mounting region (1A), an electrically conductive connection region (1C) and an electrically isolating oxidation region (1B); and at least one optoelectronic part (2) which is arranged on the upper side of the substrate (1) in the region of the mounting region (1A), the oxidation region (1B) electrically isolating the mounting region (1A) from the connection region (1C), the oxidation region (1B) extending, without interruption, from the upper side (12) of the substrate (1) to the underside (11) of the substrate (1), the mounting region (1A) and the connection region (1B) being formed with aluminium (10), the oxidation region (1B) being formed with an oxide (15) of the aluminium (10), and the mounting region (1A), the oxidation region (1B) and the connection region (1C) being designed contiguously to form an entity.
摘要翻译：本发明涉及一种包括基板（1）的光电子半导体部件，所述基板具有与所述上侧（12）相对的上侧（12）和下侧（11），所述基板（1）形成有电（1A），导电连接区域（1C）和电隔离氧化区域（1B）; 和至少一个光电子部件（2），其在安装区域（1A）的区域中布置在基板（1）的上侧上，氧化区域（1B）将安装区域（1A）与连接部件所述氧化区域（1B）从所述衬底（1）的上侧（12）延伸到所述衬底（1）的下侧（11），所述安装区域（1A）和所述衬底（10）形成氧化区（1B），所述氧化区（1B）由所述铝（10）的氧化物（15）形成，并且所述安装区（1A），所述氧化区（1B）和所述氧化区连接区域（1C）被连续地设计以形成实体。

9. 发明公开

EP2596534A1 STRAHLUNGSEMITTIERENDES BAUELEMENT UND VERFAHREN ZUR HERSTELLUNG VON STRAHLUNGSEMITTIERENDEN BAUELEMENTEN 有权
标题翻译：辐射分量及其制造方法可发射组件
公开(公告)号：EP2596534A1
公开(公告)日：2013-05-29
申请号：EP11739022.9
申请日：2011-07-15
申请人： OSRAM Opto Semiconductors GmbH
发明人： WEIDNER, Karl , RAMCHEN, Johann , KALTENBACHER, Axel , WEGLEITER, Walter , BARCHMANN, Bernd , GRUBER, Stefan , BOGNER, Georg
IPC分类号： H01L33/38 , H01L33/58 , G02B6/00 , G02F1/13357 , H01L33/20 , H01L33/60 , H01L25/075 , H01L33/46 , H01L33/40
CPC分类号： H01L33/60 , G02F1/133603 , H01L25/0753 , H01L25/0756 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/46 , H01L33/58 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a radiation-emitting component comprising a semiconductor chip (2), which has a first main surface (25), a second main surface (26) located opposite of the first main surface, and an active region (23) provided for generating radiation; a substrate (5), on which the semiconductor chip is fastened on the side of the second main surface (26); and a decoupling layer (4), which is disposed on the first main surface (25) of the semiconductor chip (2) and forms lateral decoupling surfaces (40) spaced apart from the semiconductor chip (2) in the lateral direction, wherein a recess (45) tapering toward the semiconductor chip (2) is formed in the decoupling layer (4), said recess deflecting radiation exiting the first main surface (25) in the direction of the lateral decoupling surface (40) during operation. The invention further relates to a method for producing a radiation-emitting component.
摘要翻译：发射辐射的元件包括半导体芯片，其具有第一主表面，在相对的一侧从第一主表面和在有源区上的第二主表面上并产生辐射率; 在其上的半导体芯片被固定在所述第二主面侧的载体; 到配置在半导体芯片的第一主表面和形成在横向方向上的半导体芯片间隔开的横向输出表面上输出层，凹部逐渐变细，在半导体芯片的存在的方向，形成在输出层和偏转辐射从第一主表面新兴手术进入侧输出表面的方向中。

10. 发明公开

EP2593973A1 OPTOELEKTRONISCHES HALBLEITERBAUTEIL 有权
公开(公告)号：EP2593973A1
公开(公告)日：2013-05-22
申请号：EP11725748.5
申请日：2011-06-16
申请人： OSRAM Opto Semiconductors GmbH
发明人： SCHNEIDER, Markus , RACZ, David , RAMCHEN, Johann
IPC分类号： H01L33/46 , H01L33/60 , H01L33/50
CPC分类号： H01L33/60 , H01L33/20 , H01L33/46 , H01L33/50 , H01L33/56 , H01L33/62 , H01L2224/48227 , H01L2224/48465 , H01L2924/1715 , H01L2924/3025 , H01L2924/00
摘要： In at least one embodiment of the optoelectronic semiconductor component (1), said component contains a carrier (2) having an upper substrate upper (20). At least one optoelectronic semiconductor chip (3) is arranged on the upper carrier face (20). The semiconductor chip (3) comprises a semiconductor layer sequence (32) having at least one active layer for generating electromagnetic radiation and a radiation-permeable substrate (34). Furthermore, the semiconductor component (1) comprises a reflective potting compound (4) which, starting from the upper carrier face (20), completely surrounds the semiconductor chip (3) in a lateral direction at least up to half the height of the substrate (34).
摘要翻译：在光电子半导体部件（1）的至少一个实施例中，所述部件包含具有上基板鞋帮（20）的载体（2）。至少一个光电子半导体芯片（3）布置在上载体面（20）上。半导体芯片（3）包括具有用于产生电磁辐射的至少一个有源层和辐射可渗透基板（34）的半导体层序列（32）。此外，半导体元件（1）包括反射灌封化合物（4），该反射灌封化合物从上载体面（20）开始在横向方向上完全围绕半导体芯片（3）至少达到基底高度的一半（34）。

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