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1. 发明公开

EP2897277A1 MULTILEVEL POWER CONVERSION CIRCUIT AND DEVICE 审中-公开
标题翻译：美国火奴鲁鲁人民解放军
公开(公告)号：EP2897277A1
公开(公告)日：2015-07-22
申请号：EP13836333.8
申请日：2013-09-09
申请人： National Institute Of Advanced Industrial Science
发明人： SATO Yukihiko , OBARA Hidemine , OHASHI Hiromichi , NAKAJIMA Akira , NISHIZAWA Shinichi
IPC分类号： H02M7/483
CPC分类号： H02M7/537 , H02M1/32 , H02M7/25 , H02M7/483
摘要： [Solution] An actually used flying capacitor-type multilevel power conversion circuit has variations in the characteristics of main semiconductor switches, and includes parasitic elements such as parasitic resistance, parasitic capacity, and parasitic inductance in the circuit, which causes flying capacitors to be charged and discharged to different quantities contrary to ideal case, making it necessary to have voltage sensors for flying capacitor voltage detection and a main semiconductor switch control mechanism in order to suppress fluctuation of the flying capacitor voltages from prescribed values. Furthermore, this circuit becomes unpractical when the number of levels is increased. The present invention provides a circuit that adjusts flying capacitor voltages to prescribed values automatically without voltage sensors for detection of individual flying capacitor voltages, and a main semiconductor switch control mechanism, by additionally providing a main circuit thereof with a closed circuit for suppressing flying capacitor voltage fluctuations by means of an adjusting current.
摘要翻译： [解决方案]实际使用的飞跨电容式多电平电力转换电路具有主要半导体开关的特性的变化，并且包括诸如寄生电阻，寄生电容和电路中的寄生电感的寄生元件，这导致飞电容器被充电并且与理想情况相反地排放到不同的数量，因此需要具有用于飞越电容器电压检测的电压传感器和主要的半导体开关控制机构，以便抑制飞秒电容器电压从规定值的波动。此外，当电平数量增加时，该电路变得不实际。本发明提供了一种电路，其将飞秒电容器电压自动调整到没有用于检测各个飞行电容器电压的电压传感器，以及主半导体开关控制机构，通过另外为其主电路提供用于抑制飞越电容器电压的闭合电路通过调整电流的波动。

2. 发明公开

EP2866250A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：EP2866250A1
公开(公告)日：2015-04-29
申请号：EP13806624.6
申请日：2013-06-05
申请人： National Institute Of Advanced Industrial Science
发明人： NAKAJIMA Akira , NISHIZAWA Shinichi , OHASHI Hiromichi
IPC分类号： H01L21/337 , H01L21/28 , H01L21/336 , H01L21/338 , H01L27/06 , H01L27/095 , H01L29/778 , H01L29/78 , H01L29/786 , H01L29/808 , H01L29/812 , H01L29/861 , H01L29/868
CPC分类号： H01L27/0266 , H01L21/0455 , H01L21/049 , H01L27/0248 , H01L27/0255 , H01L27/0605 , H01L27/0629 , H01L29/04 , H01L29/045 , H01L29/1066 , H01L29/1075 , H01L29/1083 , H01L29/1087 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/205 , H01L29/41725 , H01L29/4236 , H01L29/475 , H01L29/66068 , H01L29/7787 , H01L29/7816 , H01L29/7835 , H01L29/7841 , H01L29/8083 , H01L29/872
摘要： [Problem] A wide band gap semiconductor device used in a power converter is known to have a problem that the device is destroyed with a high surge voltage, and tolerance against breakdown needs to be improved. This problem is known to be more outstanding in a unipolar and lateral type semiconductor device.
[Solution] The present invention provides a semiconductor device that prevents destruction due to an avalanche breakdown and that has a high tolerance against breakdown by configuring the device so as to have a punch-through breakdown function therein and such that the breakdown voltage of a punch-through breakdown is lower than an avalanche breakdown voltage so that an avalanche breakdown does not occur.
摘要翻译： [背景技术]已知用于电力转换器的宽带隙半导体器件具有以高浪涌电压破坏器件并且需要改善耐击穿性的问题。已知这个问题在单极和横向型半导体器件中更为突出。解决方案本发明提供了一种半导体器件，其防止由于雪崩击穿造成的破坏，并且通过配置该器件以在其中具有击穿击穿功能并且使得击穿的击穿电压通过击穿低于雪崩击穿电压，从而不会发生雪崩击穿。

3. 发明授权

EP2866250B1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP2866250B1
公开(公告)日：2019-03-27
申请号：EP13806624.6
申请日：2013-06-05
申请人： National Institute of Advanced Industrial Science and Technology
发明人： NAKAJIMA Akira , NISHIZAWA Shinichi , OHASHI Hiromichi
IPC分类号： H01L29/778 , H01L29/78 , H01L29/808 , H01L27/06 , H01L29/872 , H01L29/417 , H01L29/10 , H01L29/20 , H01L29/16 , H01L29/205 , H01L29/423 , H01L29/47

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