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1. 发明公开

EP3312841A1 MAGNETIC TUNNEL JUNCTION DEVICE AND MAGNETIC MEMORY DEVICE 审中-公开
标题翻译：磁隧道结器件和磁存储器件
公开(公告)号：EP3312841A1
公开(公告)日：2018-04-25
申请号：EP17000496.4
申请日：2017-03-24
申请人： Korea University Research and Business Foundation
发明人： LEE, Kyung Jin
IPC分类号： G11C11/16 , G11C11/18
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/18 , H01L27/228 , H01L43/02 , H01L43/10
摘要： A magnetic tunnel junction device and a magnetic memory device are provided. The magnetic tunnel junction device includes a magnetic tunnel junction including a fixed magnetic body, an insulator, and a free magnetic body which are sequentially stacked and a conducting wire disposed adjacent to the free magnetic body of the magnetic tunnel junction to apply in-plane current to the magnetic tunnel junction. In the magnetic tunnel junction device, the fixed magnetic body has a fixed magnetization direction and is a thin film including a material magnetized in a direction perpendicular to a film surface. The free magnetic body has a structure of [auxiliary free magnetic layer/free non-magnetic layer] N /main free magnetic layer, where N is a positive integer greater than or equal to 2 and indicates that an [auxiliary free magnetic layers/free non-magnetic layers] structure is stacked repeatedly N times. Each of the main free magnetic layer and the auxiliary free magnetic layer changes in magnetization direction and is a thin film including a material magnetized in a direction perpendicular to a film surface, and the main free magnetic layer is disposed adjacent to a conducting wire generating spin current by the in-plane current. Among magnetic layers constituting the free magnetic body, two magnetic layers closest to each other have opposite magnetization directions by an RKKY exchange interaction.
摘要翻译：提供了一种磁性隧道结装置和一种磁性存储装置。该磁隧道结器件包括磁隧道结，该磁隧道结包括顺序堆叠的固定磁体，绝缘体和自由磁体，以及与磁隧道结的自由磁体相邻设置的导线，以施加面内电流到磁性隧道结。在磁隧道结器件中，固定磁体具有固定的磁化方向，并且是包括在垂直于膜表面的方向上被磁化的材料的薄膜。自由磁体具有[辅助自由磁层/自由非磁性层] N /主自由磁层的结构，其中N是大于或等于2的正整数并且表示[辅助自由磁层/自由非磁层非磁性层]结构重复堆叠N次。主自由磁层和辅助自由磁层中的每一个在磁化方向上变化，并且是包括在垂直于膜表面的方向上被磁化的材料的薄膜，并且主自由磁层被布置为与产生旋转的导线相邻电流通过平面内电流。在构成自由磁体的磁性层中，通过RKKY交换相互作用，彼此最接近的两个磁性层具有相反的磁化方向。

2. 发明公开

EP3343564A1 MAGNETIC TUNNEL JUNCTION DEVICE WITH SPIN-FILTER STRUCTURE 有权
公开(公告)号：EP3343564A1
公开(公告)日：2018-07-04
申请号：EP17001094.6
申请日：2017-06-28
申请人： Korea University Research and Business Foundation
发明人： KIM, Young Keun , LEE, Kyung Jin , GO, Gyungchoo
IPC分类号： G11C11/16 , G11C11/18
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1675 , G11C11/18 , H01L27/228 , H01L43/04 , H01L43/065 , H01L43/10
摘要： A magnetic device includes: a conductive layer into which current is injected in a first direction, the conductive layer causing spin Hall effect or Rashba effect; a ferromagnetic layer disposed in contact with the conductive layer such that the ferromagnetic layer and the conductive layer are stacked on each other, a magnetization direction of the ferromagnetic layer being switched; and a spin filter structure having a fixed magnetization direction, the spin filter structure being disposed on at least one of the opposite side surfaces of the first direction of the conductive layer to inject spin-polarized current into the conductive layer.

3. 发明公开

EP3297049A1 MAGNETIC MEMORY DEVICE 有权转让
标题翻译：磁性记忆装置
公开(公告)号：EP3297049A1
公开(公告)日：2018-03-21
申请号：EP16793000.7
申请日：2016-05-12
申请人： Korea University Research and Business Foundation
发明人： LEE, Kyung Jin , LEE, Hyun Woo , PARK, Byong Guk
IPC分类号： H01L43/02 , H01L43/10 , H01L43/08
CPC分类号： G11C11/02 , G11C11/1675 , G11C11/18 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetic memory device may include tunnel junction unit cells, each including a pinned magnetic layer, an insulating layer, and a free magnetic layer which are sequentially stacked, a conductive line structure configured to supply an in-plane current to the unit cells and to include an antiferromagnetic layer, which is provided adjacent to the free magnetic layer, and a ferromagnetic layer, which is provided adjacent to the antiferromagnetic layer and has an in-plane magnetic anisotropy, and a voltage applying unit configured to independently apply a selection voltage to each of the tunnel junction unit cells. Each of the tunnel junction unit cells may have a magnetization direction that is selectively changed by the in-plane current and the selection voltage.
摘要翻译：磁存储器件可以包括隧道结单元，每个隧道结单元包括顺序堆叠的钉扎磁层，绝缘层和自由磁层;导线结构，被配置为向单元单元提供平面内电流;以及包括与自由磁层相邻设置的反铁磁层以及设置在反铁磁层附近并具有面内磁各向异性的铁磁层，以及电压施加单元，被配置为将选择电压独立地施加到每个隧道结单元单元。每个隧道结单元可以具有通过面内电流和选择电压而选择性改变的磁化方向。

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