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1. 发明授权

EP2302708B1 Semiconductor light-emitting device 有权转让
标题翻译：一种发光半导体器件
公开(公告)号：EP2302708B1
公开(公告)日：2016-08-24
申请号：EP10154639.8
申请日：2010-02-25
申请人： Kabushiki Kaisha Toshiba
发明人： Sugizaki, Yoshiaki , Kojima, Akihiro , Obata, Susumu
IPC分类号： H01L33/44 , H01L33/50 , H01L33/00 , H01L33/46 , H01L33/48 , H01L33/56
CPC分类号： H01L33/387 , H01L25/048 , H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/40 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/50 , H01L33/505 , H01L33/52 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2924/00

2. 发明公开

EP2302708A3 Semiconductor light-emitting device and method for manufacturing same 有权转让
标题翻译：发光半导体装置及其制造方法
公开(公告)号：EP2302708A3
公开(公告)日：2012-06-13
申请号：EP10154639.8
申请日：2010-02-25
申请人： Kabushiki Kaisha Toshiba
发明人： Sugizaki, Yoshiaki , Kojima, Akihiro , Obata, Susumu
IPC分类号： H01L33/44 , H01L33/46 , H01L33/48 , H01L33/50 , H01L33/56
CPC分类号： H01L33/387 , H01L25/048 , H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/40 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/50 , H01L33/505 , H01L33/52 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2924/00
摘要： A semiconductor light-emitting device of the invention includes: a semiconductor layer (15) including a light-emitting layer and having a first major surface (12) and a second major surface opposite to the first major surface (12); a phosphor layer (61) facing to the first major surface (12); an interconnect layer provided on the second major surface side and including a conductor (16,17,41,42) and an insulator (21,22); and a light-blocking member (35,51,36,39) provided on a side surface of the semiconductor layer (15) and being opaque to light emitted from the light-emitting layer.

3. 发明公开

EP2390936A1 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：EP2390936A1
公开(公告)日：2011-11-30
申请号：EP10177314.1
申请日：2010-09-17
申请人： Kabushiki Kaisha Toshiba
发明人： Sugizaki, Yoshiaki , Obata, Susumu
IPC分类号： H01L33/48 , H01L33/44 , H01L33/62
CPC分类号： H01L33/486 , H01L33/0079 , H01L33/44 , H01L33/54 , H01L33/62 , H01L2224/16 , H05K3/3436 , H05K2201/10106
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar, a resin layer and a conductive material. The conductive material is provided on a surface of the resin layer between the first metal pillar and the second metal pillar, and electrically connects the first metal pillar and the second metal pillar.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱，树脂层和导电材料。导电材料设置在第一金属柱和第二金属柱之间的树脂层的表面上，并且电连接第一金属柱和第二金属柱。

4. 发明公开

EP3620779A1 PROCESSING SYSTEM, DETERMINING METHOD WITH REGARD TO CATALYTIC LAYER OF NOBLE METAL, AND MANUFACTURING METHOD OF PRODUCT 有权
公开(公告)号：EP3620779A1
公开(公告)日：2020-03-11
申请号：EP19188797.5
申请日：2019-07-29
申请人： Kabushiki Kaisha Toshiba
发明人： Sano, Mitsuo , Matsuo, Keiichiro , Obata, Susumu , Higuchi, Kazuhito , Shimokawa, Kazuo
IPC分类号： G01N23/223 , H01L21/66
摘要： According to one embodiment, in a processing system (1) and determining method, a X-ray intensity (I) of character X-rays generated by irradiating a catalytic layer (22) of a noble metal formed on a surface of a substrate (21) with X-rays is detected. In the processing system (1) and the determining method, either the detected X-ray intensity (I) or a parameter calculated using the X-ray intensity (I) is obtained as a determination parameter. In the processing system (1) and the determining method, based at least on the determination parameter, whether or not the catalytic layer (22) has been formed into a state suitable for etching the surface of the substrate (21) is determined.

5. 发明公开

EP2642535A2 Semiconductor light emitting device and method for manufacturing the same 有权转让
标题翻译： Lichtemittierendes Halbleiterbauelement und sein Herstellungsverfahren
公开(公告)号：EP2642535A2
公开(公告)日：2013-09-25
申请号：EP13159429.3
申请日：2013-03-15
申请人： Kabushiki Kaisha Toshiba
发明人： Kimura, Akiya , Higuchi, Kazuhito , Shimokawa, Kazuo , Obata, Susumu , Nakayama, Toshiya , Ito, Hisashi
IPC分类号： H01L33/00 , H01L33/48 , H01L33/64 , H01L25/16 , H01L27/15 , H01L33/62
CPC分类号： H01L33/62 , H01L25/167 , H01L33/0075 , H01L33/486 , H01L33/52 , H01L33/647 , H01L2224/16245 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0066
摘要： A semiconductor light emitting device (110, 120, 130) includes a light emitting unit (15), a first and second conductive pillar (41, 42), a sealing unit (44), and a first and second terminal (51, 52). The light emitting unit (15) includes a first and second semiconductor layer (10, 20) and a light emitting layer (30). The light emitting layer (30) is provided on the first semiconductor layer (10). The second semiconductor layer (20) is provided on the light emitting layer (30). The first conductive pillar (41) is provided on the first semiconductor layer (10). The second conductive pillar (42) is provided on the second semiconductor layer (20). The sealing unit (44) covers side faces (15s, 41s, 42s) of each of the light emitting unit (15), the first conductive pillar (41), and the second conductive pillar (42). The first terminal (51) is provided on the first conductive pillar (41) and on the sealing unit (44). The second terminal (52) is provided on the second conductive pillar (42) and on the sealing unit (44).
摘要翻译：半导体发光器件（110,120,130）包括发光单元（15），第一和第二导电柱（41,42），密封单元（44）以及第一和第二端子（51,52 ）。发光单元（15）包括第一和第二半导体层（10,20）和发光层（30）。发光层（30）设置在第一半导体层（10）上。第二半导体层（20）设置在发光层（30）上。第一导电柱（41）设置在第一半导体层（10）上。第二导电柱（42）设置在第二半导体层（20）上。密封单元（44）覆盖发光单元（15），第一导电柱（41）和第二导电柱（42）中的每一个的侧面（15s，41s，42s）。第一端子（51）设置在第一导电柱（41）和密封单元（44）上。第二端子（52）设置在第二导电柱（42）上和密封单元（44）上。

6. 发明公开

EP2393127A1 Method for manufacturing light-emitting device 审中-公开
标题翻译：制造发光装置的方法
公开(公告)号：EP2393127A1
公开(公告)日：2011-12-07
申请号：EP10178692.9
申请日：2010-09-23
申请人： Kabushiki Kaisha Toshiba
发明人： Kojima, Akihiro , Sugizaki, Yoshiaki , Obata, Susumu , Nishiuchi, Hideo
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/0075 , H01L33/486 , H01L2224/16 , H01L2933/0066
摘要： According to one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include forming a first electrode and a second electrode on a semiconductor layer (12) which is included in a first structure body (ST1), the semiconductor layer (12) including a light-emitting layer on a substrate (10). The method can include forming a first metal pillar in conduction with the first electrode, and a second metal pillar in conduction with the second electrode. The method can include filling a region between the first metal pillar and the second metal pillar with an insulating layer. In addition, the method can include separating the substrate (10) from the semiconductor layer (12), and forming a second structure body (ST2) in which the semiconductor layer (12) is supported by the insulating layer and which is convex toward an opposite side of the insulating layer to the semiconductor layer (12).
摘要翻译：根据一个实施例，公开了一种用于制造发光器件的方法。该方法可以包括在包括在第一结构体（ST1）中的半导体层（12）上形成第一电极和第二电极，半导体层（12）在衬底（10）上包括发光层。该方法可以包括形成与第一电极导电的第一金属柱和与第二电极导电的第二金属柱。该方法可以包括用绝缘层填充第一金属柱和第二金属柱之间的区域。此外，该方法可以包括：将衬底（10）与半导体层（12）分离，以及形成第二结构体（ST2），其中半导体层（12）由绝缘层支撑并且朝向绝缘层的与半导体层（12）相反的一侧。

7. 发明公开

EP2851970A1 Semiconductor light emitting device 有权转让
标题翻译：半导体发光器件
公开(公告)号：EP2851970A1
公开(公告)日：2015-03-25
申请号：EP14180009.4
申请日：2014-08-06
申请人： Kabushiki Kaisha Toshiba
发明人： Obata, Susumu , Fujii, Takayoshi , Higuchi, Kazuhito , Kojima, Akihiro
IPC分类号： H01L33/38 , H01L33/40
CPC分类号： H01L33/405 , H01L33/385 , H01L33/42 , H01L33/502
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked body (15), first and second electrodes (40, 50). The stacked body (15) includes a light emitting layer (30). The first and second electrodes (40, 50) are provided on the stacked body (15). The device further includes an insulating layer (70) covering the stacked body (15), a first conversion electrode (43) electrically connected to the first electrode (40), a second conversion electrode (53) electrically connected to the second electrode (50), and a light blocking body (57) covering a side surface of the stacked body (15). The first conversion electrode (43), the second conversion electrode (53), and the light blocking body (57) include, in a portion contacting with the insulating layer (70), a member with a reflectance of 80 percent or more for light emitted from the light emitting layer (30).
摘要翻译：根据一个实施例，半导体发光器件包括层叠体（15），第一和第二电极（40,50）。层叠体（15）具有发光层（30）。第一和第二电极（40,50）设置在层叠体（15）上。该器件还包括覆盖层叠体（15）的绝缘层（70），电连接到第一电极（40）的第一转换电极（43），电连接到第二电极（50）的第二转换电极（53））以及覆盖层叠体（15）的侧面的遮光体（57）。第一转换电极（43），第二转换电极（53）和遮光体（57）在与绝缘层（70）接触的部分包括具有80％以上的反射率的部件从发光层（30）发射。

8. 发明公开

EP2546894A2 Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：EP2546894A2
公开(公告)日：2013-01-16
申请号：EP12176117.5
申请日：2012-07-12
申请人： Kabushiki Kaisha Toshiba
发明人： Shimokawa, Kazuo , Higuchi, Kazuhito , Obata, Susumu
IPC分类号： H01L33/46
CPC分类号： H01L33/46 , H01L24/96 , H01L33/54 , H01L2224/04105 , H01L2224/12105 , H01L2224/73265 , H01L2224/73267
摘要： According to one embodiment, a semiconductor light emitting device (110, 110a-110g, 110p, 111a, 111b, 112a, 112b, 120a-120f, 121a, 121b, 122a, 112b) includes a stacked body (15), a first electrode (40), a second electrode (50), a reflective layer (60), a first metal pillar (45), a second metal pillar (55), and a sealing unit (80). The stacked body (15) includes first and second semiconductor layers (10, 20), and a light emitting unit (30). The light emitting unit (30) is provided between the second portion (12) and the second semiconductor layer (20). The first electrode (40) is provided on the first semiconductor layer (10). The second electrode (50) is provided on the second semiconductor layer (20). The reflective layer (60) covers a side surface of the stacked body (15) and insulative and reflective. The first metal pillar (45) is electrically connected to the first electrode (40). The second metal pillar (55) is electrically connected to the second electrode (50). The sealing unit (80) seals the first and second metal pillars (45, 55) to leave end portions of the first and second metal pillars (45, 55) exposed.
摘要翻译：根据一个实施例，半导体发光器件（110,110a-110g，110p，111a，111b，112a，112b，120a-120f，121a，121b，122a，112b）包括堆叠体（15），第一电极（40），第二电极（50），反射层（60），第一金属柱（45），第二金属柱（55）和密封单元（80）。堆叠体（15）包括第一和第二半导体层（10,20）以及发光单元（30）。发光单元（30）设置在第二部分（12）和第二半导体层（20）之间。第一电极（40）设置在第一半导体层（10）上。第二电极（50）设置在第二半导体层（20）上。反射层（60）覆盖层叠体（15）的侧面并且具有绝缘性和反射性。第一金属柱（45）电连接到第一电极（40）。第二金属柱（55）电连接到第二电极（50）。密封单元（80）密封第一和第二金属柱（45,55），以使第一和第二金属柱（45,55）的端部暴露。

9. 发明公开

EP2302708A2 Semiconductor light-emitting device and method for manufacturing same 有权转让
标题翻译：半导体发光器件及其制造方法
公开(公告)号：EP2302708A2
公开(公告)日：2011-03-30
申请号：EP10154639.8
申请日：2010-02-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Sugizaki, Yoshiaki , Kojima, Akihiro , Obata, Susumu
IPC分类号： H01L33/44 , H01L33/50
CPC分类号： H01L33/387 , H01L25/048 , H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/40 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/50 , H01L33/505 , H01L33/52 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2924/00
摘要： A semiconductor light-emitting device of the invention includes: a semiconductor layer (15) including a light-emitting layer and having a first major surface (12) and a second major surface opposite to the first major surface (12); a phosphor layer (61) facing to the first major surface (12); an interconnect layer provided on the second major surface side and including a conductor (16,17,41,42) and an insulator (21,22); and a light-blocking member (35,51,36,39) provided on a side surface of the semiconductor layer (15) and being opaque to light emitted from the light-emitting layer.
摘要翻译：本发明的半导体发光器件包括：半导体层（15），其包括发光层并且具有第一主表面（12）和与第一主表面（12）相对的第二主表面; 面对所述第一主表面（12）的磷光体层（61）; 设置在第二主表面侧并包括导体（16,17,41,42）和绝缘体（21,22）的互连层; 和设置在所述半导体层（15）的侧面上且对从所述发光层发出的光不透明的遮光部件（35,51,36,39）。

10. 发明授权

EP2851970B1 Semiconductor light emitting diode device 有权转让
标题翻译：半导体发光二极管器件
公开(公告)号：EP2851970B1
公开(公告)日：2018-03-14
申请号：EP14180009.4
申请日：2014-08-06
申请人： Kabushiki Kaisha Toshiba
发明人： Obata, Susumu , Fujii, Takayoshi , Higuchi, Kazuhito , Kojima, Akihiro
IPC分类号： H01L33/38 , H01L33/40
CPC分类号： H01L33/405 , H01L33/385 , H01L33/42 , H01L33/502
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked body (15), first and second electrodes (40, 50). The stacked body (15) includes a light emitting layer (30). The first and second electrodes (40, 50) are provided on the stacked body (15). The device further includes an insulating layer (70) covering the stacked body (15), a first conversion electrode (43) electrically connected to the first electrode (40), a second conversion electrode (53) electrically connected to the second electrode (50), and a light blocking body (57) covering a side surface of the stacked body (15). The first conversion electrode (43), the second conversion electrode (53), and the light blocking body (57) include, in a portion contacting with the insulating layer (70), a member with a reflectance of 80 percent or more for light emitted from the light emitting layer (30).

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