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    • 2. 发明公开
    • Sapphire single crystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same
    • 蓝宝石单晶,其如在一个半导体激光二极管的基板和其制备方法使用
    • EP0792955A3
    • 1998-05-13
    • EP97301352
    • 1997-02-28
    • KYOCERA CORP
    • KINOSHITA HIROYUKIUMEHARA MOTOHIRO
    • C30B33/00H01S5/02H01S5/32H01S5/323C30B29/20C30B15/34H01S3/085
    • H01S5/32341C30B29/20C30B33/00G02B1/02H01S5/0202H01S5/0213H01S5/0422H01S5/3202
    • A sapphire single crystal body useful as a substrate, of thin film growth, for semiconductor or the like electronic parts or component parts, a single crystal sapphire substrate, and a method for working the same are disclosed. Considering that the cleavage plane of the plane R of the sapphire single crystal body has a smooth plane high in surface precision and is easier to cleave, for an easier dividing operation, by cleaving, of the substrate after the formation of the element such as semiconductor element, functional element, a reference plane substantially parallel or vertical to the plane R is provided on the periphery of the substrate, so as to make an index for controlling the plane R in the cleavage division. Forming a linear crack parallel or vertical to the reference plane of the substrate provides a starting point to develop the crack in the thickness direction. In a laser diode of the invention, the single crystal sapphire substrate which forms the semiconductor multilayer is cleaved, divided along the plane R to form the cleaved plane connected with the semiconductor multilayer and the substrate. Since the cleaved plane of the semiconductor muitilayer is an extremely smooth plane, the cleaved plane can be used for the reflection plane for laser resonator use of the semiconductor multilayer.
    • 蓝宝石单晶体作为一个有用的基片,薄膜生长的,对于半导体等电子部件或组成部分,单晶蓝宝石衬底,和用于工作的同一个方法游离缺失光盘。 考虑没有所述蓝宝石单晶体的平面R的解理面具有光滑的平面高的表面精确度,并且更容易切割,在容易将手术,由元件形成后切割基板的,:诸如半导体 元件,功能元件,一个基准平面基本上平行或垂直于平面R被设置在基片的周边上,从而使一个索引,用于控制在所述裂解的分裂平面R。 形成线性裂缝平行或垂直于基板的基准平面提供了一个起点来开发在厚度方向上的裂纹。 在本发明的一个激光二极管,其形成在半导体多层单晶蓝宝石衬底被切割,沿着将R分割,以形成与半导体层叠基板和平面相连的切割平面。 由于半导体muitilayer的解理平面计划极其光滑,切割的平面可用于反射面的激光谐振器中使用的半导体多层的。