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2. 发明公开

EP0278410A1 A manufacturing method for cascoded junction type field effect transistors 失效
标题翻译： HerstellungsmethodefürJunction-Feldeffekttransistoren在Kaskodenschaltung。
公开(公告)号：EP0278410A1
公开(公告)日：1988-08-17
申请号：EP88101652.1
申请日：1988-02-04
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Okano, Jun-ichi Patent Division , Matsumoto, Kiyohito Patent Division
IPC分类号： H01L27/08 , H01L27/06
CPC分类号： H01L27/098 , H01L21/82 , Y10S438/911
摘要： A method for manufacturing cascoded junction type field effect transistors comprises the steps of forming an epitaxial layer (33) of a first conductivity type used as a channel region on a semiconductor substrate (32) of a second conductivity type and performing selective oxidation to form a thick oxide film on part of the epitaxial layer (33). Then, the thick oxide film is removed to provide a part of the surface which is a level lower than the main surface of the epitaxial layer (33). Next, an impurity of the first conductivity type is doped into the low and high surface areas of the epitaxial layer (33) from the surface thereof to form source and drain regions (38 and 39) separated at a preset distance. After this, an impurity of the second conductivity type is doped into the low and high level surface areas of the epitaxial layer (33) between the source and drain regions (38 and 39) to simultaneously form first and second junction gates (44 and 45) which are separated at a present distance. Then, the semiconductor substrate (32) is connected to the second junction gate (45) and source region (38) to connect two junction FETs in cascode fashion.
摘要翻译：制造级联结型场效应晶体管的方法包括以下步骤：在第二导电类型的半导体衬底（32）上形成用作沟道区的第一导电类型的外延层（33），并执行选择性氧化以形成部分外延层（33）上的厚氧化膜。然后，去除厚的氧化物膜以提供比外延层（33）的主表面低的水平的一部分表面。接下来，从其表面将第一导电类型的杂质掺杂到外延层（33）的低表面和高表面区域中，以形成以预设距离分离的源区和漏区（38和39）。此后，第二导电类型的杂质被掺杂到源区和漏区（38和39）之间的外延层（33）的低和高电平表面区域中，以同时形成第一和第二结栅（44和45 ），它们以目前的距离分离。然后，半导体衬底（32）连接到第二结栅极（45）和源极区域（38），以串联方式连接两个结型FET。

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