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1. 发明授权

EP2204461B1 HIGH-PURITY YTTERBIUM, SPUTTERING TARGET MADE OF HIGH-PURITY YTTERBIUM, THIN FILM CONTAINING HIGH-PURITY YTTERBIUM, AND METHOD FOR PRODUCING HIGH-PURITY YTTERBIUM 有权
标题翻译：高纯度钇，高纯度镱溅射靶材，含高纯度钇的薄膜及生产高纯度钇的方法
公开(公告)号：EP2204461B1
公开(公告)日：2017-09-06
申请号：EP08841768.8
申请日：2008-09-24
申请人： JX Nippon Mining & Metals Corporation
发明人： SHINDO, Yuichiro , YAGI, Kazuto
IPC分类号： C22B59/00 , C22B5/04 , C22B9/02 , C22B9/16 , C22C28/00 , C23C14/34
CPC分类号： C22B5/16 , C22B5/04 , C22B59/00 , C22C28/00 , C23C14/3414

2. 发明授权

EP2241655B1 METHOD OF RECOVERING VALUABLE METALS FROM IZO SCRAP 有权
标题翻译：从IZO废料回收价值金属的方法
公开(公告)号：EP2241655B1
公开(公告)日：2013-03-27
申请号：EP09710064.8
申请日：2009-01-30
申请人： JX Nippon Mining & Metals Corporation
发明人： SHINDO, Yuichiro , TAKEMOTO, Kouichi
IPC分类号： C25C1/22 , C01G9/02 , C01G15/00 , C22B3/44 , C22B7/00 , C22B19/20 , C22B19/30 , C22B58/00 , C25C1/16 , C22B3/04 , C25B1/00
CPC分类号： C22B3/045 , C01G9/02 , C01G15/00 , C22B3/22 , C22B7/006 , C22B19/30 , C22B58/00 , C25B1/00 , C25C1/22 , Y02P10/234

3. 发明公开

EP2772327A1 HIGH-PURITY TITANIUM INGOTS, MANUFACTURING METHOD THEREFOR, AND TITANIUM SPUTTERING TARGET 有权
标题翻译： HOCHREINETITANBLÖCKE，HERSTELLUNGSVERFAHRENDAFÜRUND TITAN-SPUTTERINGTARGET
公开(公告)号：EP2772327A1
公开(公告)日：2014-09-03
申请号：EP13748626.2
申请日：2013-02-13
申请人： JX Nippon Mining & Metals Corporation
发明人： YAGI, Kazuto , HINO, Eiji , SHINDO, Yuichiro
IPC分类号： B22D21/06 , C22B9/22 , C22B34/12 , C22C1/02 , C22C14/00 , C23C14/34
CPC分类号： C23C14/3414 , C22B9/22 , C22B9/228 , C22B34/1295 , C22C1/02 , C22C1/03 , C22C1/1084 , C22C14/00 , H01J37/3426
摘要： Provided is a high-purity titanium ingot having a purity, excluding an additive element and gas components, of 99.99 mass% or more, wherein at least one nonmetallic element selected from S, P, and B is contained in a total amount of 0.1 to 100 mass ppm as the additive component and the variation in the content of the nonmetallic element between the top, middle, and bottom portions of the ingot is within ±200%. Provided is a method of manufacturing a titanium ingot containing a nonmetallic element in an amount of 0.1 to 100 mass ppm, wherein S, P, or B, which is a nonmetallic element, is added to molten titanium as an intermetallic compound or a master alloy to produce a high-purity titanium ingot having a purity, excluding an additive element and gas components, of 99.99 mass% or more. It is an object of the present invention to provide a high-purity titanium having decreased intra- and inter-ingot variations in the content of the nonmetallic element, a uniform structure, and improved strength by containing at least one nonmetallic element selected from S, P, and B.
摘要翻译：本发明提供一种纯度不高于99.99质量％以上的添加元素和气体成分的高纯钛锭，其中，选自S，P，B中的至少一种非金属元素的含量为0.1〜 100质量ppm作为添加成分，并且锭的顶部，中部和底部之间的非金属元素的含量变化在±200％以内。提供一种制造含有0.1〜100质量ppm的非金属元素的钛锭的方法，其中作为非金属元素的S，P或B被添加到作为金属间化合物或母合金的熔融钛中制造纯度不高于99.99质量％以上的添加元素和气体成分的高纯度钛锭。本发明的一个目的是提供一种通过含有至少一种非金属元素选自S，S，C，C，C的组合，其中非金属元素含量的变化不均匀，结构均匀，强度提高， P和B.

4. 发明授权

EP2143825B1 METHOD OF RECOVERING VALUABLE METAL FROM SCRAP CONTAINING CONDUCTIVE OXIDE 有权转让
标题翻译：中回收有价值金属与导电含有氧化废料
公开(公告)号：EP2143825B1
公开(公告)日：2013-06-05
申请号：EP08710987.2
申请日：2008-02-08
申请人： JX Nippon Mining & Metals Corporation
发明人： SHINDO, Yuichiro , TAKEMOTO, Kouichi
IPC分类号： C25B1/00 , C22B7/00
CPC分类号： C22B58/00 , C22B7/001 , C22B7/006 , C22B25/06 , C25B1/00 , C25C1/00 , Y02P10/214 , Y02P10/228 , Y02P10/234

5. 发明授权

EP1936005B1 HIGH-PURITY Ru ALLOY TARGET, PROCESS FOR PRODUCING THE SAME AND SPUTTERED FILM 有权转让
标题翻译：高纯RU合金靶及其制造方法薄膜溅射
公开(公告)号：EP1936005B1
公开(公告)日：2011-12-28
申请号：EP06766880.6
申请日：2006-06-19
申请人： JX Nippon Mining & Metals Corporation
发明人： KANOU, Gaku , SHINDO, Yuichiro
IPC分类号： C23C14/34 , C22C5/04 , H01L21/285
CPC分类号： C23C14/3414 , C22C5/04 , H01L28/65
摘要： [PROBLEMS] To provide a sputtering target that not only minimizes harmful substances but also miniaturizes crystal grains to the utmost possible so as to uniformize the film thickness distribution at film formation and that would not deteriorate the adherence to Si substrate, being suitable for use in the formation of capacitor electrode material of semiconductor memory. Further to provide a process for producing the same and a high-purity Ru alloy sputtered film obtained by sputtering the Ru alloy target. [MEANS FOR SOLVING PROBLEMS] There is provided a high-purity Ru alloy target characterized by being composed of 15 to 200 wtppm of non-Ru platinum group element and the balance Ru and unavoidable impurities. Further, there is provided a process for producing a high-purity Ru alloy target composed of 15 to 200 wtppm of non-Ru platinum group element and the balance Ru and unavoidable impurities, characterized by first mixing 99.9% or higher purity Ru powder and non-Ru platinum group element powder together, press molding the mixture into a molded item, melting the molded item by electron beams into an ingot, and forging the ingot into a target.

6. 发明授权

EP2130947B1 METHOD OF RECOVERING VALUABLE METAL FROM SCRAP CONTAINING CONDUCTIVE OXIDE 有权转让
标题翻译：中回收有价值金属废金属有导电性氧化物
公开(公告)号：EP2130947B1
公开(公告)日：2012-08-08
申请号：EP08721548.9
申请日：2008-03-07
申请人： JX Nippon Mining & Metals Corporation
发明人： SHINDO, Yuichiro , TAKEMOTO, Koichi
IPC分类号： C25C1/14 , C22B1/02 , C22B3/04 , C22B3/44 , C22B5/12 , C22B7/00 , C22B19/34 , C22B25/06 , C22B58/00 , C25B1/00 , C25C1/16 , C25C1/22
CPC分类号： C22B3/045 , C22B3/44 , C22B7/006 , C22B25/04 , C22B25/06 , C22B58/00 , C25B1/04 , C25C1/14 , Y02E60/366 , Y02P10/228 , Y02P10/234
摘要： A method of recovering a valuable metal from an oxide-based scrap, characterized by using an insoluble electrode as an anode, using the oxide-based scrap as a cathode, and conducting electrolysis to recover the cathode scrap in the form of metal or suboxide. Thus, a valuable metal is efficiently recovered from an oxide-based scrap, e.g., a sputtering target made of indium-tin oxide (ITO) or fragments resulting from production.

7. 发明公开

EP2383354A1 METHOD FOR MANUFACTURING HIGH-PURITY ERBIUM, HIGH-PURITY ERBIUM, SPUTTERING TARGET COMPOSED OF HIGH-PURITY ERBIUM, AND METAL GATE FILM HAVING HIGH-PURITY ERBIUM AS MAIN COMPONENT 有权
标题翻译：工艺生产高纯度铒，高纯度铒，溅射靶从高纯度铒和金属栅膜具有高纯度铒为主要成分
公开(公告)号：EP2383354A1
公开(公告)日：2011-11-02
申请号：EP10735697.4
申请日：2010-01-13
申请人： JX Nippon Mining & Metals Corporation
发明人： SHINDO, Yuichiro , YAGI, Kazuto
IPC分类号： C22B59/00 , C22B9/02 , C22B9/04 , C22B9/14 , C22C28/00 , C23C14/34
CPC分类号： C22C28/00 , C22B5/04 , C22B5/16 , C22B9/006 , C22B9/14 , C22B59/00 , C23C14/3414
摘要： Provided are a method for manufacturing high-purity erbium, wherein crude erbium oxide is mixed with reducing metal, erbium is reduced and distilled by heating the mixture in a vacuum, and the distillate is melted in an inert atmosphere to obtain high-purity erbium; and high-purity erbium, wherein the purity excluding rare-earth elements and gas components is 4N or higher and the oxygen content is 200 wtppm or less. An object of this invention is to provide a method of highly purifying erbium, which has a high vapor pressure and is difficult to be refined in a molten metal state, as well as technology for efficiently and stably providing high-purity erbium obtained with the foregoing method, a sputtering target composed of high-purity erbium, and a metal gate film having high-purity erbium as a main component.
摘要翻译：本发明提供一种用于制造高纯度铒，worin粗铒氧化物与还原性金属混合的方法，铒降低，并且通过在真空下加热混合物蒸馏，将馏出物在惰性气氛中熔化以得到高纯度的铒; 和高纯度铒，worin不含稀土元素和气体成分以外的纯度为4N以上，氧含量为200重量ppm以下。本发明的一个目的是提供高度纯化铒，其具有高的蒸气压，并且难以在熔融金属状态待精炼，以及技术用于有效且稳定地提供具有前述中获得高纯度铒的方法方法，高纯度铒组成的溅射靶，和金属栅极具有膜高纯度铒作为主成分。

8. 发明授权

EP2241656B1 METHOD OF RECOVERING VALUABLE METALS FROM IZO SCRAP 有权转让
标题翻译：贵金属从IZO废料的回收过程
公开(公告)号：EP2241656B1
公开(公告)日：2013-05-15
申请号：EP09710686.8
申请日：2009-01-30
申请人： JX Nippon Mining & Metals Corporation
发明人： SHINDO, Yuichiro , TAKEMOTO, Kouichi
IPC分类号： C25C1/22 , C01G9/02 , C01G15/00 , C22B3/44 , C22B7/00 , C22B19/30 , C22B58/00 , C25C1/16 , C22B3/04 , C25B1/00
CPC分类号： C22B58/00 , C01G9/02 , C01G15/00 , C22B3/045 , C22B3/22 , C22B7/006 , C22B19/30 , C25B1/00 , C25C1/22 , Y02P10/234

9. 发明授权

EP2078767B1 METHOD FOR COLLECTION OF VALUABLE METAL FROM ITO SCRAP 有权
标题翻译：方法回收有价金属从废ITO
公开(公告)号：EP2078767B1
公开(公告)日：2011-09-28
申请号：EP07767700.3
申请日：2007-06-27
申请人： JX Nippon Mining & Metals Corporation
发明人： SHINDO, Yuichiro , TAKEMOTO, Kouichi
IPC分类号： C25C1/14 , C22B7/00 , C22B25/06 , C22B58/00
CPC分类号： C25C1/14 , C22B3/045 , C22B7/006 , C22B25/06 , C22B58/00 , Y02P10/228 , Y02P10/234
摘要： Disclosed is a method for collecting a valuable metal from an indium-tin oxide (ITO) scrap, characterized by collecting tin by the electrolysis of the ITO scrap. Also disclosed is a method for collecting a valuable metal from an ITO scrap, characterized by providing an ITO-electrolyzing bath and a tin-collecting bath, dissolving the ITO scrap in the electrolyzing bath, and collecting tin in the collecting bath. Further disclosed is a method for collecting a valuable metal from an ITO scrap, characterized by conducting the electrolysis of the ITO scrap in an electrolyte solution by using the ITO scrap as an anode to dissolve the ITO scrap, causing the precipitation of only tin in the solution in the form of metal tin or a tin-containing substance, removing the precipitation product and placed it in a collection bath where the precipitation product is dissolved again to provide a solution of tin hydroxide, and conducting the electrolysis or neutralization of the solution to collect tin. It becomes possible to provide a method for collecting tin at high efficiency from an ITO sputtering target or an ITO scrap (e.g., a ITO waste) produced during the production of the ITO sputtering target.

10. 发明授权

EP2383354B1 METHOD FOR MANUFACTURING HIGH-PURITY ERBIUM, HIGH-PURITY ERBIUM, SPUTTERING TARGET COMPOSED OF HIGH-PURITY ERBIUM 有权
标题翻译：由高纯度铒组成的高纯度铒，高纯度铒，溅射靶材的制造方法
公开(公告)号：EP2383354B1
公开(公告)日：2018-03-07
申请号：EP10735697.4
申请日：2010-01-13
申请人： JX Nippon Mining & Metals Corporation
发明人： SHINDO, Yuichiro , YAGI, Kazuto
IPC分类号： C22B59/00 , C22B9/02 , C22B9/04 , C22B9/14 , C22C28/00 , C23C14/34 , C22B5/04 , C22B5/16
CPC分类号： C22C28/00 , C22B5/04 , C22B5/16 , C22B9/006 , C22B9/14 , C22B59/00 , C23C14/3414
摘要： Provided are a method for manufacturing high-purity erbium, wherein crude erbium oxide is mixed with reducing metal, erbium is reduced and distilled by heating the mixture in a vacuum, and the distillate is melted in an inert atmosphere to obtain high-purity erbium; and high-purity erbium, wherein the purity excluding rare-earth elements and gas components is 4N or higher and the oxygen content is 200 wtppm or less. An object of this invention is to provide a method of highly purifying erbium, which has a high vapor pressure and is difficult to be refined in a molten metal state, as well as technology for efficiently and stably providing high-purity erbium obtained with the foregoing method, a sputtering target composed of high-purity erbium, and a metal gate film having high-purity erbium as a main component.

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