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1. 发明公开

EP2840574A4 MEMORY CIRCUIT PROVIDED WITH BISTABLE CIRCUIT AND NON-VOLATILE ELEMENT 有权
标题翻译： SPEICHERSCHALTUNG MIT BISTABILER SCHALTUNG UNDNICHTFLÜCHTIGEMELEMENT
公开(公告)号：EP2840574A4
公开(公告)日：2015-07-15
申请号：EP13791129
申请日：2013-02-19
申请人： JAPAN SCIENCE & TECH AGENCY
发明人： SHUTO YUSUKE , YAMAMOTO SHUICHIRO , SUGAHARA SATOSHI
IPC分类号： G11C11/15 , G11C11/412 , G11C14/00
CPC分类号： G11C14/0081 , G11C11/1675 , G11C11/1693

2. 发明公开

EP3182414A1 MEMORY CIRCUIT 有权转让
标题翻译： SPEICHERSCHALTUNG
公开(公告)号：EP3182414A1
公开(公告)日：2017-06-21
申请号：EP15831700
申请日：2015-08-06
申请人： JAPAN SCIENCE & TECH AGENCY
发明人： SUGAHARA SATOSHI , SHUTO YUSUKE , YAMAMOTO SHUICHIRO
IPC分类号： G11C11/15 , G11C11/412
CPC分类号： G11C14/0081 , G11C11/412
摘要： Provided is a memory circuit including: a plurality of cells arranged in a plurality of rows and a plurality of columns so that the plurality of rows are grouped to form a plurality of banks each including one or more rows, each of the plurality of cells including: a bistable circuit configured to store data; and a non-volatile element configured to store data stored in the bistable circuit in a non-volatile manner and to restore data stored in a non-volatile manner to the bistable circuit; and a controller configured to: perform a store operation on each of the plurality of rows in turn; set a voltage supplied, as a power-supply voltage, to cells in a first bank of the plurality of banks to a first voltage, the first bank including a row on which the store operation is performed; and set a voltage supplied, as a power-supply voltage, to cells in a bank of the plurality of banks other than the first bank to a second voltage that is less than the first voltage but at which data in the bistable circuit is retained.
摘要翻译：提供了一种存储电路，包括：以多行排列的多个单元和多列，使得多个行被分组以形成多个行，每个行包括一行或多行，多个单元中的每一个包括：配置为存储数据的双稳态电路; 以及非易失性元件，其被配置为以非易失性方式存储在双稳态电路中存储的数据，并将以非易失性方式存储的数据恢复到双稳态电路; 以及控制器，被配置为：依次执行对所述多个行中的每一行的存储操作; 将作为电源电压的电压设置到所述多个存储体的第一存储体中的单元到第一电压，所述第一存储体包括执行所述存储操作的行; 并将作为电源电压的电压设定在除了第一组之外的多个存储体的存储体中的单元到小于第一电压但保持双稳态电路中的数据的第二电压。

3. 发明公开

EP3118906A4 TRANSISTOR USING PIEZORESISTOR AS CHANNEL, AND ELECTRONIC CIRCUIT 有权
公开(公告)号：EP3118906A4
公开(公告)日：2017-11-15
申请号：EP15761845
申请日：2015-03-06
申请人： JAPAN SCIENCE & TECH AGENCY
发明人： SUGAHARA SATOSHI , SHUTO YUSUKE , KUROSAWA MINORU , FUNAKUBO HIROSHI , YAMAMOTO SHUICHIRO
IPC分类号： H01L49/00 , G11C11/16 , G11C14/00 , H01L27/22 , H01L27/24 , H01L29/84 , H03K3/356 , H04R21/00
CPC分类号： H01L49/00 , G11C11/16 , G11C14/0081 , G11C14/009 , H01L27/226 , H01L27/2436 , H03K3/356
摘要： Provided is a transistor including: a piezoresistor 10 through which carriers conduct; a source 14 that injects the carriers into the piezoresistor; a drain 16 that receives the carriers from the piezoresistor; a piezoelectric material 12 that is located so as to surround the piezoresistor and applies a pressure to the piezoresistor; and a gate 18 that applies a voltage to the piezoelectric material applies so that the piezoelectric material applies a pressure to the piezoresistor.

4. 发明公开

EP2840575A4 MEMORY CIRCUIT 有权
标题翻译： SPEICHERSCHALTUNG
公开(公告)号：EP2840575A4
公开(公告)日：2015-07-08
申请号：EP13791432
申请日：2013-02-19
申请人： JAPAN SCIENCE & TECH AGENCY
发明人： YAMAMOTO SHUICHIRO , SHUTO YUSUKE , SUGAHARA SATOSHI
IPC分类号： G11C14/00 , G11C13/00
CPC分类号： G11C14/0081 , G11C11/1673 , G11C11/1675 , G11C11/1677 , G11C13/0069 , G11C14/0054 , G11C2013/0076 , G11C2207/2263

5. 发明公开

EP3182414A4 MEMORY CIRCUIT 有权转让
标题翻译： SPEICHERSCHALTUNG
公开(公告)号：EP3182414A4
公开(公告)日：2017-08-02
申请号：EP15831700
申请日：2015-08-06
申请人： JAPAN SCIENCE & TECH AGENCY
发明人： SUGAHARA SATOSHI , SHUTO YUSUKE , YAMAMOTO SHUICHIRO
IPC分类号： G11C11/15 , G11C11/412 , G11C14/00
CPC分类号： G11C14/0081 , G11C11/412

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