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1. 发明公开

EP0583115A1 Nonlinear optical device 失效
标题翻译： Nichtlineare optische Vorrichtung。
公开(公告)号：EP0583115A1
公开(公告)日：1994-02-16
申请号：EP93306018.8
申请日：1993-07-29
申请人： International Business Machines Corporation
发明人： Owa, Soichi , Kumata, Kiyoshi , Kano, Satoru S.
IPC分类号： G02F1/35
CPC分类号： B82Y20/00 , G02F1/01725 , G02F1/3515 , G02F1/3534 , G02F1/3556 , G02F1/377 , G02F2001/3548
摘要： This invention is intended to provide a nonlinear optical device with sufficiently high nonlinearity for efficient wavelength conversion or optical modulation.
The nonlinear optical device according to this invention comprises a substrate and material layers disposed thereupon, at least a portion of said material layers being alternate insulator layers and semiconductor layers comprising a multi-quantum-well structure, the potential for electrons in said semiconductor layers being asymmetric in the z-direction normal to said substrate.
A quantum well structure that uses an insulator layer as the barrier layer and a semiconductor layer as the well layer satisfies the requirements of a well depth of 3 eV or more, and of a difference between the minimum energy level (e₁) of the electrons in the conduction band and the maximum energy level (h₁) of the electrons in the valence band of 3 eV or more, whereby the device is transparent for visible light, including second harmonic generated blue light.
摘要翻译：本发明旨在提供一种具有足够高的非线性的非线性光学器件，用于有效的波长转换或光学调制。根据本发明的非线性光学器件包括衬底和设置在其上的材料层，所述材料层的至少一部分是交替的绝缘体层和包括多量子阱结构的半导体层，所述半导体层中的电子的电位为在垂直于所述衬底的z方向上不对称。使用绝缘体层作为阻挡层和作为阱层的半导体层的量子阱结构满足3eV以上的阱深度和电子的最小能级（e1）之间的差异的要求，价带中的电子的导带和最大能级（h1）为3eV以上，由此该装置对于包括二次谐波产生的蓝光的可见光是透明的。

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