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1. 发明授权

EP3248306B1 DIGITAL GENERATION OF MULTI-LEVEL PHASE SHIFTING WITH MACH-ZEHNDER MODULATOR (MZM) 有权
公开(公告)号：EP3248306B1
公开(公告)日：2019-03-13
申请号：EP16739774.4
申请日：2016-01-19
申请人： Huawei Technologies Co. Ltd.
发明人： CHEN, Morgan , XU, Qianfan , LEE, Hungyi , GU, Yifan , GU, Liang , DANG, Yen , LEI, Gong , CAO, Yuming , SHEN, Xiao , BAI, Yu Sheng
IPC分类号： H04B10/548 , H04B10/54

2. 发明公开

EP3149523A1 INVERSE TAPER WAVEGUIDES FOR LOW-LOSS MODE CONVERTERS 审中-公开
标题翻译： WENENLEITER MIT逆转胶条FÜRWANDLER MIT VERLUSTARMEM MODUS
公开(公告)号：EP3149523A1
公开(公告)日：2017-04-05
申请号：EP15724836.0
申请日：2015-04-30
申请人： Huawei Technologies Co. Ltd.
发明人： YANG, Li , PAN, Huapu , XU, Qianfan , ZHENG, Dawei , SHEN, Xiao
IPC分类号： G02B6/30 , G02B6/122 , G02B6/14
CPC分类号： G02B6/14 , G02B6/1228 , G02B6/132 , G02B6/136 , G02B6/305
摘要： An apparatus comprises a substrate comprising a silicon dioxide (SiO2) material disposed on top of the substrate, a silicon waveguide comprising a first adiabatic tapering and enclosed in the silicon dioxide material, and a low-index waveguide disposed on top of the substrate and adjacent to the first adiabatic tapering. A mode converter fabrication method comprises obtaining a mode converter comprising a substrate, a silicon waveguide disposed on the substrate and comprising a sidewall and a first adiabatic tapering, and a hard mask disposed on the silicon waveguide and comprising a silicon dioxide (SiO2) layer, wherein the hard mask does not cover the sidewall, and oxidizing the silicon waveguide and the hard mask, wherein oxidizing the silicon waveguide and the hard mask encloses the silicon waveguide within the silicon dioxide layer.
摘要翻译：一种设备包括：衬底，其包括设置在衬底顶部的二氧化硅（SiO 2）材料，包括第一绝热锥形并封装在二氧化硅材料中的硅波导，以及设置在衬底顶部和相邻的低折射率波导到第一个绝热锥形。一种模式转换器制造方法，包括：获得模式转换器，包括基板，设置在基板上的硅波导，包括侧壁和第一绝热锥形，以及设置在硅波导上并包括二氧化硅（SiO 2）层的硬掩模，其中所述硬掩模不覆盖所述侧壁，并且氧化所述硅波导和所述硬掩模，其中氧化所述硅波导和所述硬掩模将所述硅波导包围在所述二氧化硅层内。

3. 发明公开

EP3656133A1 ALL-OPTICAL NETWORKS BASED ON SWITCHABLE WAVELENGTH CONNECTS (SWCS) 有权转让
公开(公告)号：EP3656133A1
公开(公告)日：2020-05-27
申请号：EP18845881.4
申请日：2018-08-13
申请人： Huawei Technologies Co., Ltd.
发明人： XU, Qianfan , ZHANG, Feng , SHEN, Xiao Andy
IPC分类号： H04Q11/00 , H04J14/02

4. 发明公开

EP3123239A1 MOS CAPACITOR OPTICAL MODULATOR WITH TRANSPARENT CONDUCTIVE AND LOW-REFRACTIVE-INDEX GATE 有权
标题翻译：具有低折射率透明导电栅极光调制器的MOS电容器
公开(公告)号：EP3123239A1
公开(公告)日：2017-02-01
申请号：EP15719131.3
申请日：2015-04-17
申请人： Huawei Technologies Co. Ltd.
发明人： CHEN, Hongmin , XU, Qianfan , YANG, Li , SHEN, Xiao
IPC分类号： G02F1/025 , G02B6/12
CPC分类号： G02F1/025 , G02B6/13 , G02B2006/12061 , G02B2006/12142 , G02F2001/0151 , H01L29/0649 , H01L29/167 , H01L29/4966 , H01L29/51 , H01L29/518 , H01L29/66181 , H01L29/94
摘要： A metal-oxide semiconductor (MOS) optical modulator including a doped semiconductor layer having a waveguide structure, a dielectric layer disposed over the waveguide structure of the doped semiconductor layer, a gate region disposed over the dielectric layer, wherein the gate region comprises a transparent electrically conductive material having a refractive index lower than that of silicon, and a metal contact disposed over the gate region. The metal contact, the gate region, and the waveguide structure of the doped semiconductor layer may be vertically aligned with each other.
摘要翻译：一种金属氧化物半导体（MOS）光调制器，其包括具有波导结构中，设置在所述掺杂的半导体层，设置在电介质层上形成栅区的波导结构的介电层的掺杂半导体层，worin栅极区域包括透明电具有折射率比硅低，和设置在所述栅极区的金属接触的导电材料。金属接触，栅极区，和掺杂半导体层的波导结构可以与海誓山盟垂直对准。

5. 发明公开

EP3117252A1 SUSPENDED RIDGE OXIDE WAVEGUIDE 有权
标题翻译： WELLENLEITER MIT SUSPENDIERTEM STARREM OXID
公开(公告)号：EP3117252A1
公开(公告)日：2017-01-18
申请号：EP15717781.7
申请日：2015-04-10
申请人： Huawei Technologies Co., Ltd.
发明人： XU, Qianfan , SHEN, Xiao
IPC分类号： G02B6/30
CPC分类号： G02B6/1228 , G02B6/122 , G02B6/305
摘要： A waveguide comprising a single-mode optical core configured to carry an optical signal between an inversely tapered waveguide and an optical fiber, wherein the core extends longitudinally along an axis of optical signal propagation between the inversely tapered waveguide and the optical fiber, and an air cladding disposed adjacent to the core along the axis of optical signal propagation.
摘要翻译：一种波导，其包括被配置为在逆锥形波导和光纤之间承载光信号的单模光纤，其中所述芯沿着反向锥形波导和光纤之间的光信号传播的轴线纵向延伸，并且空气包层沿着光信号传播的轴线邻近核心布置。

6. 发明公开

EP3268805A1 VERTICAL PN SILICON MODULATOR 有权
标题翻译：垂直PN硅调制器
公开(公告)号：EP3268805A1
公开(公告)日：2018-01-17
申请号：EP16776057.8
申请日：2016-03-17
申请人： Huawei Technologies Co. Ltd.
发明人： WEI, Hongzhen , YANG, Li , XU, Qianfan , SHEN, Xiao Andy
IPC分类号： G02F1/025
CPC分类号： G02F1/025 , G02F2001/0151 , G02F2001/0152 , H01L21/2253 , H01L21/30604 , H01L21/3215
摘要： A silicon waveguide comprising a waveguide core that comprises a first positively doped (P1) region vertically adjacent to a second positively doped (P2) region. The P2 region is more heavily positively doped than the P1 region. A first negatively doped (N1) region is vertically adjacent to a second negatively doped (N2) region. The N2 region is more heavily negatively doped than the N1 region. The N2 region and the P2 region are positioned vertically adjacent to form a positive-negative (PN) junction. The N1 region, the N2 region, the P1 region, and the P2 region are positioned as a vertical PN junction and configured to completely deplete the P2 region of positive ions and completely deplete the N2 region of negative ions when a voltage drop is applied across the N1 region, the N2 region, the P1 region, and the P2 region.

7. 发明公开

EP3248306A1 DIGITAL GENERATION OF MULTI-LEVEL PHASE SHIFTING WITH MACH-ZEHNDER MODULATOR (MZM) 有权
标题翻译： Mach-ZEHNDER调制器（MZM）实现多级相移数字生成
公开(公告)号：EP3248306A1
公开(公告)日：2017-11-29
申请号：EP16739774.4
申请日：2016-01-19
申请人： Huawei Technologies Co. Ltd.
发明人： CHEN, Morgan , XU, Qianfan , LEE, Hungyi , GU, Yifan , GU, Liang , DANG, Yen , LEI, Gong , CAO, Yuming , SHEN, Xiao , BAI, Yu Sheng
IPC分类号： H04B10/548
CPC分类号： H04L27/362 , H04B10/5053 , H04B10/541 , H04B10/5561
摘要： An apparatus comprising a first electrical driver configured to generate a first binary voltage signal according to first data, a second electrical driver configured to generate a second binary voltage signal according to second data, wherein the first data and the second data are different, and a first optical waveguide arm coupled to the first electrical driver and the second electrical driver, wherein the first optical waveguide arm is configured to shift a first phase of a first optical signal propagating along the first optical waveguide arm according to a first voltage difference between the first binary voltage signal and the second binary voltage signal to produce a first multi-level phase-shifted optical signal.

8. 发明公开

EP4050404A1 VERTICAL PN SILICON MODULATOR 无效
公开(公告)号：EP4050404A1
公开(公告)日：2022-08-31
申请号：EP22166670.4
申请日：2016-03-17
申请人： Huawei Technologies Co., Ltd.
发明人： WEI, Hongzhen , YANG, Li , XU, Qianfan , SHEN, Xiao Andy
IPC分类号： G02F1/025 , H01L21/225 , H01L21/306 , H01L21/3215 , G02F1/015
摘要： A silicon waveguide comprising a waveguide core that comprises a first positively doped (P1) region vertically adjacent to a second positively doped (P2) region. The P2 region is more heavily positively doped than the P1 region. A first negatively doped (N1) region is vertically adjacent to a second negatively doped (N2) region. The N2 region is more heavily negatively doped than the N1 region. The N2 region and the P2 region are positioned vertically adjacent to form a positive-negative (PN) junction. The N1 region, the N2 region, the P1 region, and the P2 region are positioned as a vertical PN junction and configured to completely deplete the P2 region of positive ions and completely deplete the N2 region of negative ions when a voltage drop is applied across the N1 region, the N2 region, the P1 region, and the P2 region.

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