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1. 发明授权

EP1677410B1 Isolated bidirectional DC-DC Converter 有权
公开(公告)号：EP1677410B1
公开(公告)日：2019-05-22
申请号：EP05018082.7
申请日：2005-08-19
申请人： HITACHI, LTD.
发明人： Shoji, Hiroyuki , Kanouda, Akihiko , Saito, Ryuichi , Yukutake, Seigou , Higuchi, Katsuhiro
IPC分类号： H02M3/335

2. 发明授权

EP1986234B1 Power semiconductor module for inverter circuit system 有权转让
公开(公告)号：EP1986234B1
公开(公告)日：2019-02-20
申请号：EP08006762.2
申请日：2008-04-02
申请人： Hitachi, Ltd.
发明人： Tokuyama, Takeshi , Nakatsu, Kinya , Saito, Ryuichi
IPC分类号： H01L23/473 , H02M7/00 , H02M7/81 , H01L25/07 , H01L25/11 , H05K7/20

3. 发明公开

EP2579439A2 Electric power conversion apparatus 有权
标题翻译：一种电力变换装置
公开(公告)号：EP2579439A2
公开(公告)日：2013-04-10
申请号：EP12195707.0
申请日：2009-02-20
申请人： Hitachi Ltd.
发明人： Tokuyama, Takeshi , Nakatsu, Kinya , Saito, Ryuichi , Horiuchi, Keisuke , Satoh, Toshiya , Miyazaki, Hideki
IPC分类号： H02M7/00 , H01L25/07 , H01L23/36
CPC分类号： H05K7/20927 , B60K6/26 , B60K6/28 , B60K6/46 , B60K17/16 , B60L11/1803 , B60L15/007 , B60L2210/40 , B60L2220/14 , B60L2240/429 , B60Y2200/92 , H01L23/3121 , H01L23/36 , H01L23/3675 , H01L23/473 , H01L23/492 , H01L23/49517 , H01L24/45 , H01L25/072 , H01L2224/40137 , H01L2924/00014 , H01L2924/0002 , H01L2924/1203 , H01L2924/13055 , H02M7/003 , H02M7/537 , H02P27/06 , H05K1/0262 , H05K7/2089 , Y10S903/906 , Y10S903/907 , Y10S903/909 , H01L2924/00 , H01L2224/45099
摘要： An electric power conversion apparatus includes: a channel case in which a cooling water channel is formed; a double side cooling semiconductor module 500 that comprises an upper and lower arms series circuit 50 of an inverter circuit 44-46; a capacitor module 390; a direct current connector 38; and an alternate current connector 88. The semiconductormodule 500 comprises a first and a second heat dissipation metals 522, 562 whose outer surfaces are heat dissipation surfaces, the upper and lower arms series circuit 50 is disposed tightly between the first heat dissipation metal 522 and the second heat dissipation metal 562, and the semiconductor module 500 further comprises a direct current positive terminal 57, a direct current negative terminal 58, and an alternate current terminal 59 which protrude to outside. The channel case is provided with the cooling water channel which extends from a cooling water inlet 246 to a cooling water outlet 248, and a first opening 237 which opens into the cooling water channel.

4. 发明公开

EP1808954A3 IGBT-module 失效
标题翻译： IGBT - 模块
公开(公告)号：EP1808954A3
公开(公告)日：2008-10-22
申请号：EP07007832.4
申请日：1992-09-17
申请人： Hitachi, Ltd.
发明人： Mori, Mutsuhiro , Saito, Ryuichi , Kimura, Shin, c/o Hitachi, Ltd. Intellectual Property Group , Nakata, Kiyoshi , Saitoo, Syuuji , Horie, Akira , Koike, Yoshihiko , Sekine, Shigeki
IPC分类号： H02M7/48 , H01L23/538 , H01L25/07 , H01L25/16
CPC分类号： H03K17/08148 , H01L23/04 , H01L23/18 , H01L23/24 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0655 , H01L25/072 , H01L25/16 , H01L25/18 , H01L29/66333 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49113 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01055 , H01L2924/014 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19041 , H01L2924/30107 , H01L2924/351 , H02M7/003 , H02M7/487 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： An IGBT module including a plurality of IGBT single modules each having a plurality of IGBT chips (31a, 31b), a diode chip (32a, 32b), an emitter terminal (E1; E2) and a collector terminal (C1; C2), these being disposed on one surface of an insulation plate (11a; 11b) through electrode plates (12a, 12b), a metal substrate (20) mounting the isolation plates (11a, 11b) of the plurality of IGBT single modules on one surface and a resin case (50) bonded on the surface of said metal substrate (20) and incorporating said IGBT single module. According to the invention the emitter terminals (E1, E2) and the collector terminals (C1, C2) of said plurality of IGBT single modules are exposed on an upper surface of said resin case (50), the emitter terminals (E1, E2) are disposed side by side on a straight line parallel with and near the front edge of said metal substrate (20), the collector terminals (C1) are disposed side by side on a straight line parallel with the straight line on which said emitter terminals (E1; E2) are disposed, and at least one protruding part (21a) is formed on the upper surface of said resin case (50) for delimiting said emitter terminals (E1, E2) from said collector terminals (C1, C2).
摘要翻译：一种IGBT模块，包括多个IGBT单个模块，每个具有多个IGBT芯片（31a，31b），二极管芯片（32a，32b），发射极端子（E1; E2）和集电极端子（C1; C2）它们通过电极板（12a，12b）设置在绝缘板（11a; 11b）的一个表面上，金属基板（20）将多个IGBT单模块的隔离板（11a，11b）安装在一个表面上，结合在所述金属基板（20）的表面上并结合有所述IGBT单模块的树脂壳体（50）。根据本发明，所述多个IGBT单模块的发射极端子（E1，E2）和集电极端子（C1，C2）暴露在所述树脂壳体（50）的上表面上，发射极端子（E1，E2）并排设置在与所述金属基板（20）的前边缘平行并且靠近所述金属基板（20）的直线上的直线上，所述集电极端子（C1）并排设置在与所述发射极端子 E1; E2），并且至少一个突出部分（21a）形成在所述树脂箱（50）的上表面上，用于限定所述发射极端子（E1，E2）与所述集电端子（C1，C2）的距离。

5. 发明公开

EP1677410A1 Isolated bidirectional DC-DC Converter 审中-公开
标题翻译： Bidirektionaler Gleichspannungstrennwandler
公开(公告)号：EP1677410A1
公开(公告)日：2006-07-05
申请号：EP05018082.7
申请日：2005-08-19
申请人： HITACHI, LTD.
发明人： Shoji, Hiroyuki , Kanouda, Akihiko , Saito, Ryuichi , Yukutake, Seigou , Higuchi, Katsuhiro
IPC分类号： H02M3/335
CPC分类号： H02M1/34 , H02M3/33584 , H02M2001/342 , Y02B70/1491
摘要： The DC-DC converter connects a first and a second switching circuit for converting power mutually between direct current and alternating current respectively to a first DC power source 10 and a second DC power source 90 and has a transformer 40 between the AC terminals thereof. Here, between the AC terminals of the second switching circuit and the negative pole terminal of the DC power source 90, a voltage clamp circuit 70 composed of a series unit of switching devices 21 and 23 with a reverse parallel diode and a clamp condenser 71 is connected.
An isolated bidirectional DC-DC converter which prevents a reduction in a circulating current at time of buck and an occurrence of a surge voltage at time of voltage boost and realizes highly efficiency, low noise, and miniaturization is provided.
摘要翻译： DC-DC转换器将用于将直流和交流之间的电力相互转换的第一和第二开关电路分别连接到第一直流电源10和第二直流电源90，并且在其AC端子之间具有变压器40。这里，在第二开关电路的交流端子和直流电源90的负极端子之间，由具有反向并联二极管的开关器件21和23的串联单元和钳位电容器71构成的电压钳位电路70是连接的。提供一种隔离的双向DC-DC转换器，其防止降压时的循环电流的降低和在升压时的浪涌电压的发生，并且实现高效率，低噪声和小型化。

6. 发明授权

EP0469934B1 Semiconductor memory device and method of operation thereof 失效
标题翻译：操作的方法和装置的半导体存储器的
公开(公告)号：EP0469934B1
公开(公告)日：2001-12-12
申请号：EP91307157.7
申请日：1991-08-02
申请人： Hitachi, Ltd.
发明人： Saito, Ryuichi , Onose, Hidekatsu , Kobayashi, Yutaka , Ohue, Michio
IPC分类号： G11C11/22 , G11C11/56
CPC分类号： H01L27/11502 , G11C8/14 , G11C11/22 , G11C11/5657 , G11C16/08 , H01L27/10805

7. 发明公开

EP1024497A2 Semiconductor memory device and method of operation 失效
标题翻译： Betriebsverfahren und Anordnung eines Halbleiterspeichers
公开(公告)号：EP1024497A2
公开(公告)日：2000-08-02
申请号：EP00106043.3
申请日：1991-08-02
申请人： HITACHI, LTD.
发明人： Saito, Ryuichi , Kobayashi, Yutaka , Onose, Hidekatsu , Ohue, Michio
IPC分类号： G11C11/22
CPC分类号： H01L27/11502 , G11C8/14 , G11C11/22 , G11C11/5657 , G11C16/08 , H01L27/10805
摘要： A semiconductor memory device has a plurality of memory cells (351,352,353,354) in an array, into which the memory cells (351,352,353,354) data is writable, and which can subsequently be read. Each memory cell has a switching element (111) with one terminal connected to a bit line (120) of the array another terminal connected to at least one ferroelectric capacitor (112,113,114,115), and a control terminal connected to a word line (121). The cell may then be operated to detect the change in polarization of the ferroelectric capacitor when a voltage is applied which is not sufficient to cause a change of state of the ferroelectric capacitor. Alternatively, a ferroelectric capacitor (427) and a capacitor (428) other than a ferroelectric capacitor is connected to the switching element. In a further alternative, a plurality (112,113,114,115) of ferroelectric capacitors are connected to the switching element, so that different data are writable into each.
摘要翻译：半导体存储器件具有阵列中的多个存储单元（351,352,353,354），存储单元（351,352,353,354）数据可写入到其中，并随后可以被读取。每个存储单元具有开关元件（111），一个端子连接到与至少一个铁电电容器（112,113,114,115）连接的阵列另一端子的位线（120），以及连接到字线（121）的控制端子。然后，当施加不足以引起铁电体电容器的状态改变的电压时，可以操作电池以检测铁电电容器的极化变化。或者，除了铁电电容器之外的铁电电容器（427）和电容器（428）连接到开关元件。在另一替代方案中，多个（112,113,114,115）铁电电容器连接到开关元件，使得不同的数据可写入每个。

8. 发明公开

EP0661748A1 Semiconductor device 失效
标题翻译： Halbleitervorrichtung。
公开(公告)号：EP0661748A1
公开(公告)日：1995-07-05
申请号：EP94309433.4
申请日：1994-12-16
申请人： HITACHI, LTD. , HITACHI HARAMACHI ELECTRONICS CO., LTD.
发明人： Baba, Noboru , Okamura, Hisanori , Sakamoto, Masahiko , Akiyama, Hirosi , Saito, Ryuichi , Koike, Yoshihiko , Kitano, Makoto , Sekine, Sigeki , Kokubun, Hideya , Koike, Nobuya
IPC分类号： H01L25/07 , H01L29/739 , H01L23/36 , H01L23/12 , H01L21/58
CPC分类号： H01L23/3736 , H01L23/3735 , H01L24/45 , H01L24/48 , H01L25/072 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2224/92247 , H01L2924/01012 , H01L2924/01019 , H01L2924/01057 , H01L2924/01079 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/19107 , H01L2924/3511 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A high reliability electric power control semiconductor device with a prolonged product lifetime has been provided by successfully suppressing the metal support plate or the metal heat dissipation plate from warping due to the thermal stress during bonding so as to prevent the occurrences of cracks and gaps in the brazing fillers in the bonded layers between the metal heat dissipation plate or the metal support plate and the insulation plate in the semiconductor device comprising the semiconductor elements, metal heat dissipation plate, thermal stress buffer, insulation plate, and the metal support plate, wherein at least one of the metal heat dissipation plate and the metal support plate comprises a copper alloy of which a softening temperature at which a hot hardness of which becomes 1/2 of the hardness at the room temperature is 350°C or more. Further, in the semiconductor device fabricated by bonding the semiconductor elements via the thermal stress buffer, the heat dissipation plate and the insulation plate onto the metal support plate, the heat dissipation plate comprises a portion having a reduced thickness in the periphery thereof machined by counterboring or the like.
摘要翻译：通过成功地抑制金属支撑板或金属散热板由于在接合期间的热应力而发生翘曲而提供了具有延长的产品寿命的高可靠性电力控制半导体装置，以防止在金属散热板或金属支撑板之间的接合层中的钎焊填料和包括半导体元件，金属散热板，热应力缓冲层，绝缘板和金属支撑板的半导体器件中的绝缘板，其中金属散热板和金属支撑板中的至少一个包括其热硬度成为室温硬度的1/2的软化温度为350℃以上的铜合金。此外，在将半导体元件经由热应力缓冲器，散热板和绝缘板接合到金属支撑板上而制造的半导体器件中，散热板包括通过对置机加工的周边厚度减小的部分或类似物。

9. 发明授权

EP1919069B1 Power converter 有权
公开(公告)号：EP1919069B1
公开(公告)日：2017-08-30
申请号：EP07021337.6
申请日：2007-10-31
申请人： Hitachi, Ltd.
发明人： Nakamura, Takayoshi , Nakatsu, Kinya , Saito, Ryuichi , Suga, Takashi , Funato, Hiroki
IPC分类号： H02M7/00 , H05K7/20
CPC分类号： H05K7/20927 , H01L2224/48137 , H01L2224/48139 , H01L2224/48472 , H01L2224/49111 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H02M7/003 , H01L2924/00

10. 发明公开

EP2101402A3 Electric power conversion apparatus 有权
标题翻译： Elektrische Stromwandlervorrichtung
公开(公告)号：EP2101402A3
公开(公告)日：2015-09-02
申请号：EP09002478.7
申请日：2009-02-20
申请人： Hitachi, Ltd.
发明人： Tokuyama, Takeshi , Nakatsu, Kinya , Saito, Ryuichi , Horiuchi, Keisuke , Satoh, Toshiya , Miyazaki, Hideki
IPC分类号： H02M7/00
CPC分类号： H05K7/20927 , B60K6/26 , B60K6/28 , B60K6/46 , B60K17/16 , B60L11/1803 , B60L15/007 , B60L2210/40 , B60L2220/14 , B60L2240/429 , B60Y2200/92 , H01L23/3121 , H01L23/36 , H01L23/3675 , H01L23/473 , H01L23/492 , H01L23/49517 , H01L24/45 , H01L25/072 , H01L2224/40137 , H01L2924/00014 , H01L2924/0002 , H01L2924/1203 , H01L2924/13055 , H02M7/003 , H02M7/537 , H02P27/06 , H05K1/0262 , H05K7/2089 , Y10S903/906 , Y10S903/907 , Y10S903/909 , H01L2924/00 , H01L2224/45099
摘要： An electric power conversion apparatus includes: a channel case in which a cooling water channel is formed; a double side cooling semiconductor module 500 that comprises an upper and lower arms series circuit 50 of an inverter circuit 44-46; a capacitor module 390; a direct current connector 38; and an alternate current connector 88. The semiconductormodule 500 comprises a first and a second heat dissipation metals 522, 562 whose outer surfaces are heat dissipation surfaces, the upper and lower arms series circuit 50 is disposed tightly between the first heat dissipation metal 522 and the second heat dissipation metal 562, and the semiconductor module 500 further comprises a direct current positive terminal 57, a direct current negative terminal 58, and an alternate current terminal 59 which protrude to outside. The channel case is provided with the cooling water channel which extends from a cooling water inlet 246 to a cooling water outlet 248, and a first opening 237 which opens into the cooling water channel.
摘要翻译：电力转换装置包括：形成冷却水通道的通道壳体; 包括逆变器电路44-46的上下臂串联电路50的双面冷却半导体模块500; 电容器模块390; 直流连接器38; 和半导体模块500包括第一和第二散热金属522,562，其外表面是散热表面，上臂和下臂串联电路50紧密地设置在第一散热金属522和第二散热金属562，并且半导体模块500还包括突出到外部的直流正极端子57，直流负极端子58和交流端子59。通道壳体设置有从冷却水入口246延伸到冷却水出口248的冷却水通道以及通向冷却水通道的第一开口237。

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