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1. 发明公开

EP0548573A2 Electron beam apparatus 失效
标题翻译： Elektronenstrahlgerät。
公开(公告)号：EP0548573A2
公开(公告)日：1993-06-30
申请号：EP92120110.9
申请日：1992-11-25
申请人： HITACHI, LTD. , Hitachi Instrument Engineering Co., Ltd. , HITACHI SCIENCE SYSTEMS LTD
发明人： Otaka, Tadashi , Okura, Akimitsu , Iwamoto, Hiroshi , Todokoro, Hideo , Komoda, Tsutomu , Tobita, Issei
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J2237/2448 , H01J2237/281
摘要： An electron beam apparatus comprises an electron beam source, a unit for irradiating an electron beam (6) on a specimen (12), a detector (30) for secondary electrons, an electrode (7) for generating an electric field sufficient to draw out secondary electrons in a recess in the specimen from the recess, and a unit (2) for generating a magnetic field for focusing secondary electrons drawn out of the recess. With this construction, the secondary electrons drawn out of the recess by the electric field reach the detector without being attracted by the electrode. By adopting this construction, a contact hole of high aspect ratio formed in a semiconductor device and having a small diameter and a large depth can be observed.
摘要翻译：电子束装置包括电子束源，用于照射试样（12）上的电子束（6）的单元，用于二次电子的检测器（30），用于产生足以引出的电场的电极（7）来自凹部的试样中的凹部中的二次电子和用于产生用于聚焦从凹部拉出的二次电子的磁场的单元（2）。利用这种结构，通过电场从凹槽中引出的二次电子到达检测器而不被电极吸引。通过采用这种结构，可以观察到形成在半导体器件中并具有小直径和大深度的高纵横比的接触孔。

2. 发明公开

EP0949653A2 Electron beam apparatus 失效
标题翻译： Elektronenstrahlgerät
公开(公告)号：EP0949653A2
公开(公告)日：1999-10-13
申请号：EP99111213.7
申请日：1992-11-25
申请人： Hitachi, Ltd. , HITACHI INSTRUMENTS ENGINEERING CO., LTD. , HITACHI SCIENCE SYSTEMS, LTD.
发明人： Otaka, Tadashi , Okura, Akimitsu , Iwamoto, Hiroshi , Todokoro, Hideo , Komoda, Tsutomu , Tobita, Issei
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J2237/2448 , H01J2237/281
摘要： An observation method of an electron beam apparatus for obtaining a scanning image of a desired region by detecting electron generated from said desired region with a detector as a result of scanning electron beam in a desired region of a specimen surface comprises the steps of scanning electron beam in a specimen region including contact hole or a deep groove, returning back at least a part of secondary electron within electron generated in said scanning region to said specimen side by applying a negative voltage at grid electrode disposed between said specimen and said detector, and detecting a reflecting electron and said secondary electron of a higher energy among electron generated from said scanning region with said detector, whereby obtaining a specimen image including said contact hole or deep groove.
摘要翻译：电子束装置的观察方法，用于通过用检测器检测从所述期望区域产生的电子来获得所需区域的扫描图像，该方法是在试样表面的所需区域中扫描电子束的结果包括以下步骤：扫描电子束在包括接触孔或深沟槽的样本区域中，通过在设置在所述检体和所述检测器之间的栅电极施加负电压，将在所述扫描区域产生的电子中的二次电子的至少一部分返回到所述检体侧，反射电子和所述二次电子在由所述扫描区域与所述检测器产生的电子之间具有较高的能量，从而获得包括所述接触孔或深槽的样本图像。

3. 发明公开

EP0548573A3 Electron beam apparatus 失效
标题翻译：电子束装置
公开(公告)号：EP0548573A3
公开(公告)日：1994-03-09
申请号：EP92120110.9
申请日：1992-11-25
申请人： HITACHI, LTD. , Hitachi Instrument Engineering Co., Ltd. , HITACHI SCIENCE SYSTEMS LTD
发明人： Otaka, Tadashi , Okura, Akimitsu , Iwamoto, Hiroshi , Todokoro, Hideo , Komoda, Tsutomu , Tobita, Issei
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J2237/2448 , H01J2237/281
摘要： An electron beam apparatus comprises an electron beam source, a unit for irradiating an electron beam (6) on a specimen (12), a detector (30) for secondary electrons, an electrode (7) for generating an electric field sufficient to draw out secondary electrons in a recess in the specimen from the recess, and a unit (2) for generating a magnetic field for focusing secondary electrons drawn out of the recess. With this construction, the secondary electrons drawn out of the recess by the electric field reach the detector without being attracted by the electrode. By adopting this construction, a contact hole of high aspect ratio formed in a semiconductor device and having a small diameter and a large depth can be observed.
摘要翻译：电子束装置包括电子束源，用于在样本（12）上照射电子束（6）的单元，用于二次电子的检测器（30），用于产生足以抽出的电场的电极（7）二次电子从凹槽中进入试样的凹槽中;以及一个单元（2），用于产生磁场以聚集从凹槽中引出的二次电子。利用这种结构，通过电场从凹槽中抽出的二次电子到达检测器而不被电极吸引。通过采用这种结构，可以观察到在半导体器件中形成的具有高直径比并且具有小直径和大深度的接触孔。

4. 发明授权

EP0949653B1 Electron beam apparatus 失效
标题翻译：电子束装置
公开(公告)号：EP0949653B1
公开(公告)日：2010-02-17
申请号：EP99111213.7
申请日：1992-11-25
申请人： Hitachi, Ltd. , Hitachi Science Systems, Ltd.
发明人： Otaka, Tadashi , Okura, Akimitsu , Iwamoto, Hiroshi , Todokoro, Hideo , Komoda, Tsutomu , Tobita, Issei
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J2237/2448 , H01J2237/281

5. 发明授权

EP0548573B1 Electron beam apparatus 失效
标题翻译：电子束装置
公开(公告)号：EP0548573B1
公开(公告)日：1998-02-25
申请号：EP92120110.9
申请日：1992-11-25
申请人： HITACHI, LTD. , HITACHI INSTRUMENTS ENGINEERING CO., LTD. , HITACHI SCIENCE SYSTEMS, LTD.
发明人： Otaka, Tadashi , Okura, Akimitsu , Iwamoto, Hiroshi , Todokoro, Hideo , Komoda, Tsutomu , Tobita, Issei
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J2237/2448 , H01J2237/281

6. 发明授权

EP0581249B1 An ultra-high vacuum apparatus 失效
标题翻译： Ultrahoch-Vakuumapparat
公开(公告)号：EP0581249B1
公开(公告)日：1997-03-26
申请号：EP93112005.9
申请日：1993-07-27
申请人： HITACHI, LTD.
发明人： Ishida, Yasuhiko , Hiroki, Minoru , Kobari, Toshiaki , Satou, Osamu , Nakaizumi, Yasushi , Okura, Akimitsu , Kimura, Hideiti
IPC分类号： F16K25/00 , F16K51/02
CPC分类号： F16K51/02

7. 发明公开

EP0573891A1 Charged particle beam apparatus and method of operating it 失效
标题翻译： Ladungsträgerstrahlgerätund Verfahren zum Betrieb desselben。
公开(公告)号：EP0573891A1
公开(公告)日：1993-12-15
申请号：EP93108866.0
申请日：1993-06-02
申请人： HITACHI, LTD.
发明人： Okura, Akimitsu , Sato, Mitsugu , Yamada, Osamu , Nakaizumi, Yasushi , Hazaki, Eiichi
IPC分类号： H01J37/26
CPC分类号： H01J37/265
摘要： A specimen is scanned with an electron beam so as to generate a signal characteristic of the specimen to thereby produce an image thereof on the basis of the generated signal. A memory (102) is provided for storing operating conditions of a scanning electron microscope (107) which are associated with identification information for specifying the specimen. The identification information is designated so that at least one operating condition corresponding to the designated identification information is read out from the memory (102), and the read out operating condition is automatically set so that the scanning electron microscope (107) is operated under the set operating condition.
摘要翻译：用电子束扫描样本，以产生样本的信号特征，从而根据产生的信号产生图像。提供存储器（102），用于存储与用于指定样本的识别信息相关联的扫描电子显微镜（107）的操作条件。指定识别信息，使得从存储器（102）读出与指定的识别信息相对应的至少一个操作条件，并且自动设置读出操作条件，使扫描电子显微镜（107）在设置运行状态。

8. 发明公开

EP0949653A3 Electron beam apparatus 失效
标题翻译：电子束装置
公开(公告)号：EP0949653A3
公开(公告)日：2005-12-21
申请号：EP99111213.7
申请日：1992-11-25
申请人： Hitachi, Ltd. , Hitachi Science Systems, Ltd.
发明人： Otaka, Tadashi , Okura, Akimitsu , Iwamoto, Hiroshi , Todokoro, Hideo , Komoda, Tsutomu , Tobita, Issei
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J2237/2448 , H01J2237/281
摘要： An observation method of an electron beam apparatus for obtaining a scanning image of a desired region by detecting electron generated from said desired region with a detector as a result of scanning electron beam in a desired region of a specimen surface comprises the steps of scanning electron beam in a specimen region including contact hole or a deep groove, returning back at least a part of secondary electron within electron generated in said scanning region to said specimen side by applying a negative voltage at grid electrode disposed between said specimen and said detector, and detecting a reflecting electron and said secondary electron of a higher energy among electron generated from said scanning region with said detector, whereby obtaining a specimen image including said contact hole or deep groove.
摘要翻译：一种电子束设备的观察方法，用于通过在样本表面的期望区域中扫描电子束来检测由所述期望区域产生的电子，从而获得期望区域的扫描图像的方法包括以下步骤：扫描电子束在包括接触孔或深槽的样本区域中，通过在设置在所述样本和所述检测器之间的栅格电极上施加负电压，使所述扫描区域中产生的电子内的至少一部分二次电子返回到所述样本侧，从所述扫描区域用所述检测器产生的电子中的反射电子和具有较高能量的所述二次电子，由此获得包括所述接触孔或深槽的样本图像。

9. 发明授权

EP0810629B1 Electron beam apparatus 失效
标题翻译：电子束装置
公开(公告)号：EP0810629B1
公开(公告)日：2000-06-28
申请号：EP97112851.7
申请日：1992-11-25
申请人： Hitachi, Ltd. , Hitachi Science Systems, Ltd.
发明人： Otaka, Tadashi , Okura, Akimitsu , Iwamoto, Hiroshi , Todokoro, Hideo , Komoda, Tsutomu , Tobita, Issei
IPC分类号： H01J37/28 , H01J37/02
CPC分类号： H01J37/28 , H01J2237/2448 , H01J2237/281

10. 发明公开

EP0810629A1 Electron beam apparatus 失效
标题翻译： Elektronenstrahlgerät
公开(公告)号：EP0810629A1
公开(公告)日：1997-12-03
申请号：EP97112851.7
申请日：1992-11-25
申请人： HITACHI, LTD. , HITACHI INSTRUMENTS ENGINEERING CO., LTD. , HITACHI SCIENCE SYSTEMS, LTD.
发明人： Otaka, Tadashi , Okura, Akimitsu , Iwamoto, Hiroshi , Todokoro, Hideo , Komoda, Tsutomu , Tobita, Issei
IPC分类号： H01J37/28 , H01J37/02
CPC分类号： H01J37/28 , H01J2237/2448 , H01J2237/281
摘要： An electron beam apparatus comprises an electron beam source, a unit for irradiating an electron beam (6) on a specimen (12), a detector (30) for secondary electrons, an electrode (7) for generating an electric field sufficient to draw out secondary electrons in a recess in the specimen from the recess, and a unit (2) for generating a magnetic field for focusing secondary electrons drawn out of the recess. With this construction, the secondary electrons drawn out of the recess by the electric field reach the detector without being attracted by the electrode. By adopting this construction, a contact hole of high aspect ratio formed in a semiconductor device and having a small diameter and a large depth can be observed.
摘要翻译：电子束装置包括电子束源，用于照射试样（12）上的电子束（6）的单元，用于二次电子的检测器（30），用于产生足以引出的电场的电极（7）来自凹部的试样中的凹部中的二次电子和用于产生用于聚焦从凹部拉出的二次电子的磁场的单元（2）。利用这种结构，通过电场从凹槽中引出的二次电子到达检测器而不被电极吸引。通过采用这种结构，可以观察到形成在半导体器件中并具有小直径和大深度的高纵横比的接触孔。

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