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1. 发明公开

EP4258636A1 INFORMATION PROCESSING DEVICE AND INFORMATION PROCESSING PROGRAM 审中-实审
公开(公告)号：EP4258636A1
公开(公告)日：2023-10-11
申请号：EP21900611.1
申请日：2021-11-30
申请人： FUJIFILM Corporation
发明人： WATANABE, Tetsuya , HIROYA, Yui , SATAKE, Masanori
IPC分类号： H04N1/00 , B41J29/42 , G06F3/0486 , G06F3/0488
摘要： The image forming device is provided with a CPU. When a user perform the movement operation on the operation unit displayed on a display unit, the CPU cause an operation unit to move so as to follow a movement operation. The CPU execute a predetermined operation after the movement of the operation unit from an initial position to an execution position on the display unit is completed. When the movement operation is released on the way from the initial position to the execution position, the CPU cause the operation unit to be moved toward the initial position or the execution position other than by a user operation according to a position at which the movement operation has been released. The CPU stop the movement of the operation unit in a case in which the user selects a predetermined position of the display unit while the operation unit is moved other than by the user operation.

2. 发明授权

EP3522244B1 MICROCRYSTALLINE ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR TRANSISTOR, AND METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR TRANSISTOR 有权转让
公开(公告)号：EP3522244B1
公开(公告)日：2020-07-15
申请号：EP17855775.7
申请日：2017-09-15
申请人： FUJIFILM Corporation
发明人： GOTO, Takashi , FUKUZAKI, Eiji , WATANABE, Tetsuya
IPC分类号： H01L51/40 , H01L21/336 , H01L29/786 , H01L51/30

3. 发明公开

EP3605631A1 ORGANIC SEMICONDUCTOR ELEMENT, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM PRODUCTION METHOD, ORGANIC SEMICONDUCTOR FILM, AND COMPOUND AND POLYMER USED THEREFOR 有权转让
公开(公告)号：EP3605631A1
公开(公告)日：2020-02-05
申请号：EP18777588.7
申请日：2018-03-23
申请人： FUJIFILM Corporation , The University Of Tokyo
发明人： SHIROKANE, Kenji , FUKUZAKI, Eiji , TANI, Yukio , TAMAKUNI, Fumiko , USAMI, Yoshihisa , WATANABE, Tetsuya , OKAMOTO, Toshihiro , TAKEYA, Junichi
IPC分类号： H01L51/30 , C07D495/16 , C07D495/22 , C08G61/12 , H01L21/336 , H01L29/786 , H01L51/05
摘要： An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1), a compound of Formula (2), and/or a compound of Formula (3) or contains a polymer having a structure of any one of formed by Formulae (8) to (10), an organic semiconductor film used for the organic semiconductor layer in the element, a manufacturing method thereof, and a compound, a polymer, and a composition used for the organic semiconductor film are provided.

X 1 represents a nitrogen atom or CR a , and rings A to B each represent a specific nitrogen-containing ring.
Y 1 represents an oxygen atom, a sulfur atom, CR b 2 , or NR c .
V 1 represents NR d , an oxygen atom, a sulfur atom, or a selenium atom.
R a to R d each represent a hydrogen atom or a substituent.
R 1 represents a specific substituent, and p is an integer of 0 to 2.
n represents 1 or 2.
* represents a bonding site.

4. 发明公开

EP2192631A1 PROCESS FOR PRODUCTION OF DESUBSTITUTED COMPOUNDS, ORGANIC SEMICONDUCTOR FILM AND PROCESS FOR PRODUCTION OF THE FILM 审中-公开
标题翻译：用于生产DESUBSTITUIERTEN化合物，有机半导体膜和工艺产生胶片
公开(公告)号：EP2192631A1
公开(公告)日：2010-06-02
申请号：EP08830424.1
申请日：2008-09-09
申请人： Fujifilm Corporation
发明人： TAKAHASHI, Keita , KITAMURA, Tetsu , WATANABE, Tetsuya
IPC分类号： H01L51/30 , C09B47/24 , H01L21/336 , H01L29/786 , H01L51/05 , H01L51/40
CPC分类号： H01L51/0078 , B82Y10/00 , C09B5/62 , C09B47/00 , C09B47/04 , C09B47/045 , C09B68/44 , C09B68/441 , C09B68/46 , C09B69/08 , H01L51/0047 , H01L51/0053 , H01L51/0068 , H01L51/0545
摘要： A method of producing a desubstituted compound, including: applying an external stimulation to a compound A-(B) m having a solvent-soluble group B (wherein A represents a residue of a solvent-insoluble compound, B represents a specific solvent-soluble group, and m represents a natural number, and the solvent-soluble group B bonds to a carbon atom of the residue A of a solvent-insoluble compound), to cause desubstitution of the solvent-soluble group B, and converting the compound to a solvent-insoluble compound to which a hydrogen atom bonds in place of the solvent-soluble group B; a method of producing an organic semiconductor film, including: forming a film of a π-conjugated compound having a substituent represented by formula (2-1), on a substrate; and causing desubstitution of the substituent from the compound; and an organic semiconductor film and an organic electronic device each obtained by these methods:

wherein R 11 represents a substituent other than a hydrogen atom.
摘要翻译：制造脱取代的化合物，的方法，包括：将外界刺激的化合物A-（B）米具有溶剂可溶性基团B（worin A代表溶剂不溶性化合物的残基，B darstellt特定溶剂可溶基，m darstellt的自然数，并且所述溶剂可溶性基团B结合到溶剂不溶性化合物的残基A的碳原子上），以使所述溶剂可溶性基团B的脱取代，将化合物转化成溶剂不溶性化合物，以哪个代替溶剂可溶性基团B的氢原子键; 制造有机半导体膜，的方法，包括：形成具有由式（2-1）表示的取代基A中的共轭化合物的膜，在基板上; 以及使从化合物上的取代基脱取代; 和有机半导体膜并通过合成方法得到的各有机电子器件：worin R 11表示除氢原子以外的取代基。

5. 发明公开

EP3605629A1 ORGANIC SEMICONDUCTOR ELEMENT, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM PRODUCTION METHOD, ORGANIC SEMICONDUCTOR FILM, AND COMPOUND AND POLYMER USED THEREFOR 有权转让
公开(公告)号：EP3605629A1
公开(公告)日：2020-02-05
申请号：EP18775969.1
申请日：2018-03-23
申请人： FUJIFILM Corporation , The University Of Tokyo
发明人： SHIROKANE, Kenji , FUKUZAKI, Eiji , TANI, Yukio , TAMAKUNI, Fumiko , USAMI, Yoshihisa , WATANABE, Tetsuya , OKAMOTO, Toshihiro , TAKEYA, Junichi
IPC分类号： H01L51/30 , C07D333/50 , C07D495/22 , C08G61/12 , C08K5/34 , C08L65/00 , H01L21/336 , H01L29/786 , H01L51/05
摘要： An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1) and/or a compound of Formula (2) or contains a polymer having a structure of any one of Formulae (9) and (10), an organic semiconductor film used for the organic semiconductor layer in the element, a manufacturing method thereof, and a compound, a polymer, and a composition used for the organic semiconductor film are provided.

X 1 represents a nitrogen atom or CR a , rings A to D each represent a specific aromatic ring or an aromatic heterocyclic ring.
Y 1 represents an oxygen atom, a sulfur atom, CR b 2 , or NR c .
R a to R c each represent hydrogen atoms or substituents.
R 1 and R 2 each represent a to specific substituent.
n represents 1 or 2.
* represents a bonding site.

6. 发明授权

EP2351650B8 OPTICAL INFORMATION RECORDING MEDIUM, METHOD FOR INFORMATION RECORDING, AND AZO METAL COMPLEX DYE 有权
标题翻译：光信息记录介质，方法，信息记录和偶氮金属配合物着色剂
公开(公告)号：EP2351650B8
公开(公告)日：2015-01-28
申请号：EP09815905.6
申请日：2009-09-25
申请人： FUJIFILM Corporation
发明人： WATANABE, Kousuke , FUJIMOTO, Taisuke , WATANABE, Tetsuya , OGIYAMA, Masashi , HATANO, Seiji , HASHIZUME, Taro , HASHIMOTO, Hirokazu
IPC分类号： B41M5/26 , C09B45/08 , C09B45/14 , C09B45/18 , G11B7/24 , G11B7/244 , G11B7/249 , G11B7/247
CPC分类号： G11B7/2467 , C09B45/18 , C09B45/22 , C09B69/106 , G11B7/24079 , G11B7/2492 , G11B7/2495 , G11B2007/24612

8. 发明公开

EP3476845A1 ORGANIC THIN-FILM TRANSISTOR, ORGANIC SEMICONDUCTOR FILM, COMPOUND, ORGANIC-THIN-FILM-TRANSISTOR COMPOSITION, AND ORGANIC-THIN-FILM-TRANSISTOR MANUFACTURING METHOD 有权转让
公开(公告)号：EP3476845A1
公开(公告)日：2019-05-01
申请号：EP17820058.0
申请日：2017-06-23
申请人： FUJIFILM Corporation , The University Of Tokyo
发明人： FUKUZAKI, Eiji , WATANABE, Tetsuya , USAMI, Yoshihisa , TANI, Yukio , OKAMOTO, Toshihiro , TAKEYA, Junichi
IPC分类号： C07D471/22 , H01L51/30 , H01L29/786 , H01L51/05 , H01L51/40
摘要： Provided are an organic thin film transistor, an organic semiconductor film, a compound, an organic thin film transistor-forming composition, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes the organic semiconductor film. The organic semiconductor film includes a compound represented by a specific formula. The organic semiconductor film, the compound, and the organic thin film transistor-forming composition can be preferably used in the organic thin film transistor. The method of manufacturing the organic thin film transistor includes a step of forming an organic semiconductor film by applying the organic thin film transistor-forming composition to a substrate.

9. 发明公开

EP2351650A1 OPTICAL INFORMATION RECORDING MEDIUM, METHOD FOR INFORMATION RECORDING, AND AZO METAL COMPLEX DYE 有权
标题翻译：优惠信息澳大利亚新泽西州，VERFAHREN ZUR INFORMATIONSAUFZEICHNUNG UND AZO-METALL-KOMPLEX-FÄRBEMITTEL
公开(公告)号：EP2351650A1
公开(公告)日：2011-08-03
申请号：EP09815905.6
申请日：2009-09-25
申请人： FUJIFILM Corporation
发明人： WATANABE, Kousuke , FUJIMOTO, Taisuke , WATANABE, Tetsuya , OGIYAMA, Masashi , HATANO, Seiji , HASHIZUME, Taro , HASHIMOTO, Hirokazu
IPC分类号： B41M5/26 , C09B45/08 , C09B45/14 , C09B45/18 , G11B7/24 , G11B7/244
CPC分类号： G11B7/2467 , C09B45/18 , C09B45/22 , C09B69/106 , G11B7/24079 , G11B7/2492 , G11B7/2495 , G11B2007/24612
摘要： An aspect of the present invention relates to an optical information recording medium comprising a recording layer on a surface of a support, wherein the surface of the support has pregrooves with a track pitch ranging from 50 to 500 nm, the recording layer comprises an azo metal complex dye being a complex of six azo dyes and seven transition metal ions. A further aspect of the present invention relates to a method of recording information onto the optical information recording medium and a novel azo metal complex dye.
摘要翻译：本发明的一个方面涉及一种光学信息记录介质，其包括在支撑体的表面上的记录层，其中所述支撑体的表面具有轨道间距范围为50至500nm的预槽，所述记录层包括偶氮金属复合染料是六种偶氮染料和七种过渡金属离子的络合物。本发明的另一方面涉及一种在光学信息记录介质上记录信息的方法和一种新型偶氮金属络合物染料。

10. 发明公开

EP2184738A1 METHOD FOR PRODUCING MEDIUM ON WHICH INFORMATION IS RECORDED BY PIT PATTERN 审中-公开
标题翻译：为了制造介质的方法，到哪个信息由井网应记录
公开(公告)号：EP2184738A1
公开(公告)日：2010-05-12
申请号：EP08751745.4
申请日：2008-05-16
申请人： Fujifilm Corporation
发明人： USAMI, Yoshihisa , WATANABE, Tetsuya
IPC分类号： G11B7/26 , B41M5/26
CPC分类号： G11B7/261 , B41M5/24 , Y10T428/21
摘要： A method by which depressions and projections (pit pattern) can be formed directly and easily in a substrate made of inorganic material is provided. A method for forming a medium on which information is recorded in a pit pattern comprises the steps of: forming a recording material layer (21) over a substrate (11) made of inorganic material wherein the recording material layer is of a thermally deformable heat mode recording material; forming a plurality of holes 15 by application of condensed light to the recording material layer (21); and forming a plurality of pits (16) in the substrate wherein the plurality of pits corresponding to the plurality of holes (15) are etched by using as a mask the recording material layer (21) in which the plurality of holes are formed.
摘要翻译：提供了一种通过该凹凸（凹坑图案）可以在由无机材料构成的基片可以直接且容易地形成的方法。一种用于形成在其上的信息被记录在凹坑图案的介质的方法包括以下步骤：形成由无机材料形成的记录材料层（21）在基板（11）worin记录材料层是可热变形热模式的记录材料上; 通过应用聚光到所述记录材料层（21）形成孔15的多元性; 以及形成在基片的凹坑的多个（16）worin凹坑对应于孔的多元性（15）的多元性通过使用作为掩模其中空穴的多元性形成在记录材料层（21）被蚀刻。

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