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    • 2. 发明公开
    • FULLERENE DERIVATIVE AND N-TYPE SEMICONDUCTOR MATERIAL
    • FULLERENE衍生和N型半导体材料
    • EP2999018A1
    • 2016-03-23
    • EP14798196.3
    • 2014-05-16
    • Daikin Industries, Ltd.Osaka University
    • NAGAI, TakabumiADACHI, KenjiASO, YoshioIE, YutakaKARAKAWA, Makoto
    • H01L51/46C07D209/58C08K3/04C08L65/00
    • H01L51/0047C07D209/70C08G2261/124C08G2261/3142C08G2261/3223C08G2261/3243C08G2261/91C08K3/045H01L51/0036H01L51/0037H01L51/005H01L51/4253Y02E10/549C08K3/04C08L65/00
    • The object of the present invention is to provide a material having excellent performance as an n-type semiconductor material, in particular an n-type semiconductor for photoelectric conversion elements such as organic thin-film solar cells.
      The present invention provides an n-type semiconductor consisting of a fullerene derivative having a purity of 99% or more as defined below, the fullerene derivative being represented by formula (1):

      wherein ring A represents C 60 fullerene;
      R 1 represents a hydrogen atom, alkyl optionally having at least one substituent, or aryl optionally having at least one substituent; and
      Ar represents aryl optionally substituted with at least one alkyl group,
      the purity being defined by the following equation: Purity % = 100 − D max %
      wherein the D max (%) is the maximum value among the absolute value of the difference between an analysis value and a theoretical value obtained in elemental analysis of carbon, the absolute value of the difference between an analysis value and a theoretical value obtained in elemental analysis of hydrogen, and the absolute value of the difference between an analysis value and a theoretical value obtained in elemental analysis of nitrogen.
    • 本发明的目的是提供一种作为n型半导体材料,特别是用于诸如有机薄膜太阳能电池等光电转换元件的n型半导体的优异性能的材料。 本发明提供由富勒烯衍生物构成的n型半导体,所述富勒烯衍生物具有99%以上的纯度,所述富勒烯衍生物由式(1)表示:其中环A表示C 60富勒烯; R 1表示氢原子,任选具有至少一个取代基的烷基或任选具有至少一个取代基的芳基; Ar表示任选被至少一个烷基取代的芳基,纯度由下式定义:纯度%= 100-Dmax%其中Dmax(%)是分析值之间的差值的绝对值中的最大值 碳的元素分析中得到的理论值,氢的元素分析中得到的分析值与理论值之差的绝对值,以及元素分析中得到的分析值与理论值之差的绝对值 氮分析。
    • 6. 发明公开
    • FLUORINE-CONTAINING COPOLYMER
    • EP3459980A1
    • 2019-03-27
    • EP17799529.7
    • 2017-05-19
    • Daikin Industries, Ltd.Osaka University
    • SHIBUTANI, ShoutaADACHI, KenjiAOSHIMA, Sadahito
    • C08F283/00C08F2/44C08G65/331C08L51/08C09D5/16C09D171/00
    • An object of the present invention is to provide a novel fluorine-containing copolymer capable of providing antifouling coating compositions etc. This object of the present invention is achieved by a fluorine-containing copolymer represented by formula (1):

      wherein
      R a1 represents a perfluoropolyether group-containing monovalent or divalent group,
      X a represents -O-, phenylene, -N(-R E )- (R E represents an organic group), or carbazolylene,
      R a2 represents hydrogen or alkyl,
      R a3 represents hydrogen or alkyl,
      Q, in each occurrence, independently represents a structural unit having a functional group selected from a substituent group A or a structural unit not having a functional group selected from the substituent group A,
      R c represents a perfluoropolyether group-containing group, an organic group having or not having a functional group selected from the substituent group A, or hydrogen,
      X c represents -O-, -S-, -NH-, or a single bond,
      k represents 1 or 2,
      n1 represents the number of repeating units of 1 or more,
      the substituent group A comprising a hydroxyl group, a thiol group, an epoxy group, an amino group, alkylamino groups, dialkylamino groups, a triazole group, and precursors thereof, with the proviso that R a2 or R a3 or both are alkyl, and when R c does not represent an organic group having a functional group selected from the substituent group A, at least one Q represents a structural unit having a functional group selected from the substituent group A.
    • 8. 发明公开
    • ETCHING METHOD AND METHOD FOR PERFORMING SURFACE PROCESSING ON SOLID MATERIAL FOR SOLAR CELL
    • 蚀刻和方法进行表面处理对企业材料太阳能电池
    • EP2743969A1
    • 2014-06-18
    • EP12823923.3
    • 2012-08-10
    • Osaka UniversityDaikin Industries, Ltd.
    • MORITA, MizuhoUCHIKOSHI, JunichiTSUKAMOTO, KentaroNAGAI, TakabumiADACHI, Kenji
    • H01L21/308H01L31/04
    • H01L31/02366H01L31/02363H01L31/18Y02E10/50
    • Provided is an etching method including: (1) bringing a material containing at least one organic compound having an N-F bond into contact with the surface of a solid material; and (2) a step of heating the solid material; whereby etching can be performed safely and in a simple manner, at a higher etching rate, without the use of a high-environmental-load gas that causes global warming or highly reactive and toxic fluorine gas or hydrofluoric acid. The etching method may further include: (3) a step of exposing the solid material to light from the side of the material containing at least one organic compound having an N-F bond; and (4) a step of removing the material containing at least one organic compound having an N-F bond together with the residue remained between said material and the solid material. In particular, performing heating at a high temperature and applying light irradiation make it possible to form inverted pyramid-shaped recesses that are suitable for applying light-trapping and/or anti-reflection processing to the surface of the solid material for a solar cell.
    • 本发明提供一种蚀刻方法,包括:(1)使含有具有N-F键与固体材料的表面接触的至少一个有机化合物的材料; 和(2)加热固体材料的步骤; 由此蚀刻可以以简单的方式安全地和速率进行,以较高的蚀刻,而无需使用高环境负荷的气体确实引起全球变暖的或高反应性和毒性的氟气或氢氟酸。 蚀刻方法可以进一步包括:(3)将固体材料从含有具有N-F键的至少一种有机化合物材料的侧暴露于光的步骤; 和(4)除去含有N-F键与所述残余物,所述材料和所述固体材料之间一起保持具有至少一种有机化合物材料的工序。 特别地,在高温下进行加热和施加光照射使得能够形成倒金字塔形的凹部确实适合于施加光俘获和/或防反射处理,以将固体材料的表面的太阳能电池。