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1. 发明公开

EP4235807A1 BACK METAL ELECTRODE OF N-TYPE TOPCON SOLAR CELL AND PREPARATION METHOD THEREFOR, AND CELL 审中-实审
公开(公告)号：EP4235807A1
公开(公告)日：2023-08-30
申请号：EP21912815.4
申请日：2021-05-10
申请人： CHINT New Energy Technology Co., Ltd.
发明人： FENG, Mingzhang , YANG, Jinfang , HE, Sheng , HSU, Wei-Chih
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/18
摘要： Some embodiments of the present invention relate to a technical field of N-type TOPCon solar cells. In order to solve the problem of high costs caused by the use of silver paste to perform electrode printing on the back side of an N-type TOPCon cell, disclosed is a back-side metal electrode of an N-type TOPCon solar cell. The back-side metal electrode includes a substrate (1), a plurality of first silver fine grids (12-4) disposed on a passivation film which is on a back side of the substrate, a plurality of second aluminum fine grids (12-6) overlaid on the plurality of first silver fine grids (12-4), and a plurality of first silver main grids (12-5) disposed perpendicular to the plurality of first silver fine grids (12-4). Each of the plurality of first silver main grids (12-5) is a segmented structure. The back-side metal electrode further includes a plurality of second aluminum main grids (12-7), which are formed, in a printing manner, between sections of each of the plurality of the first silver main grids (12-5) and around the sections. The second aluminum fine grids (12-6) are obtained by overprinting aluminum paste on the first silver fine grids (12-4), such that the consumption of silver paste can be reduced, and the cost is thus reduced; in addition, transmission channels of carriers are increased, a series resistance is reduced, and cell efficiency is improved. A main grid is prepared in a silver-aluminum butt joint manner, such that the soldering requirements for the back side of a cell are met, and the consumption of main grid silver paste is also reduced, thereby reducing the cost.

2. 发明公开

EP4401155A1 BATTERY BACK PASSIVATION STRUCTURE, MANUFACTURING METHOD THEREFOR, AND SOLAR CELL 审中-实审
公开(公告)号：EP4401155A1
公开(公告)日：2024-07-17
申请号：EP22866584.0
申请日：2022-09-06
申请人： CHINT New Energy Technology Co., Ltd.
发明人： LI, Hongbo , HE, Sheng , HSU, Wei-chih , SHAN, Wei
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/042
CPC分类号： Y02E10/50 , Y02P70/50
摘要： A battery back passivation structure, a manufacturing method therefor, and a solar cell, the manufacturing method comprising: introducing a dopant gas and a first reaction gas into a coating device, and depositing a doped passivation layer on the back side of a silicon wafer (1); and introducing a second reaction gas into the coating device, and directly or indirectly depositing an internal reflection layer on the surface of the doped passivation layer away from the silicon wafer (1). The described battery back passivation structure comprises a doped passivation layer and an internal reflection layer that are stacked on the back side of the silicon wafer (1), and has enhanced passivation capability.

3. 发明公开

EP4224532A1 BACK STRUCTURE OF SOLAR CELL, AND SOLAR CELL WITH BACK STRUCTURE 审中-实审
公开(公告)号：EP4224532A1
公开(公告)日：2023-08-09
申请号：EP21912516.8
申请日：2021-02-02
申请人： CHINT New Energy Technology Co., Ltd.
发明人： LI, Hongbo , HE, Sheng , SHAN, Wei , HSU, Wei-Chih , ZENG, Xinlin , ZHAO, Yingcai
IPC分类号： H01L31/0216 , H01L31/068
摘要： Some embodiments of the present invention provide a back structure of a solar cell. The back structure includes an aluminum oxide film layer disposed on a silicon wafer substrate, and a first silicon nitride film layer and a first silicon oxynitride film layer, which are successively disposed on the aluminum oxide film layer from inside to outside; and the back structure further includes a second silicon nitride film layer disposed on the first silicon oxynitride film layer. The refractive index of the first silicon nitride film layer is greater than that of the second silicon nitride film layer, and the refractive index of the second silicon nitride film layer is greater than that of the first silicon oxynitride film layer.

4. 发明公开

EP4235808A1 N-TYPE TOPCON BATTERY HAVING DOUBLE-SIDED ALUMINUM PASTE ELECTRODE AND PREPARATION METHOD THEREFOR 审中-实审
公开(公告)号：EP4235808A1
公开(公告)日：2023-08-30
申请号：EP21928684.6
申请日：2021-05-25
申请人： CHINT New Energy Technology Co., Ltd.
发明人： FENG, Mingzhang , HE, Sheng , HSU, Wei-Chih
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/18
摘要： Some embodiments of the present disclosure provide an N-type TOPCon cell with double-sided aluminum paste electrodes, and a preparation method therefor. The front side of the cell is provided with a front-side silver main grid and a front-side aluminum fine grid, and the back side is provided with a back-side silver main grid and a back-side aluminum fine grid. The method for preparing the cell includes: texturing →B diffusion →BSG removal →alkali polishing →depositing a tunnel oxide layer and a polysilicon layer on a back side of a substrate by means of LPCVD →P diffusion on the back side →PSG removal →plating removal →deposition of an AlO x layer and an SiN x H y layer on the front side →deposition of SiN x H y on the back side →UV laser ablation on the front side of the substrate and the back side of the substrate →screen printing. In the present invention, aluminum grid lines and segmented silver main grids are obtained on the front/back side by means of aluminum paste printing, and on the back side, silver paste is replaced with aluminum paste, such that a desirable field passivation effect is formed, thereby increasing the diffusion length of carriers, enhancing the Voc of a cell, and reducing the manufacturing cost of the cell.

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