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    • 1. 发明公开
    • Exposure control in X-ray exposure apparatus
    • Belichtungssteuerung在einemRöntgenbelichtungsapparat。
    • EP0359370A2
    • 1990-03-21
    • EP89307230.6
    • 1989-07-17
    • CANON KABUSHIKI KAISHA
    • Ebinuma, RyuichiMizusawa, NobutoshiSuzuki, MasayukiUno, ShinichiroMori, TetsuzoKurosawa, Hiroshi
    • G03B42/02G21K1/04H05G1/36G03F7/20G03B9/00
    • G03F7/70058G03F7/702G21K1/04G21K1/043
    • Exposure control method and apparatus particularly suitably usable in an X-ray exposure apparatus, for exposing a mask and a wafer to a radiation (X-rays) from a synchrotron to transfer a pattern formed on a mask onto the wafer, is disclosed. Shutter device for controlling passage and interception of the synchrotron radiation is provided between the synchrotron and the wafer. The shutter device includes a blade member having a leading edge and a trailing edge which are rectilinearly movable in a direction in which there exists non-uniformness in illuminance of the radiation. The leading edge is used to determine the timing of start of passage of the radiation to the wafer, while the trailing edge is used to determine the timing of interception of the radiation. The moving speeds of the leading edge and the trailing edge are controlled independently of each other to provide different exposure times for different portions of an exposure region on the wafer, in accordance with the non-uniformness in illuminance. By this, the amount of absorption of radiation by a resist material on the wafer can be uniformized throughout the exposure region.
    • 公开了一种特别适用于X射线曝光装置的曝光控制方法和装置,用于将掩模和晶片暴露于来自同步加速器的辐射(X射线),以将形成在掩模上的图案转印到晶片上。 用于控制同步加速器辐射的通过和截取的快门装置设置在同步加速器和晶片之间。 快门装置包括具有前缘和后缘的刀片构件,其沿着存在辐射照度不均匀的方向直线地移动。 前缘用于确定辐射通向晶片的时间,而后缘用于确定辐射截取的时间。 前缘和后缘的移动速度彼此独立地控制,以根据照度的不均匀性为晶片上的曝光区域的不同部分提供不同的曝光时间。 由此,能够使整个曝光区域中的抗蚀剂材料在晶片上的辐射吸收量均匀化。
    • 2. 发明公开
    • SOR exposure system
    • S.O.R.-Belichtungssystem。
    • EP0358426A2
    • 1990-03-14
    • EP89308922.7
    • 1989-09-04
    • CANON KABUSHIKI KAISHA
    • Uda, KojiTanaka, YutakaMori, TetsuzoShimoda, IsamuUzawa, Schunichi
    • G03F7/20
    • G03F7/70525G03F7/70808G03F7/70841G03F7/70883G03F7/709G03F7/70991
    • Synchrotron orbital radiation (SOR) exposure system includes a SOR ring (8) and a plurality (15a-15c) of exposure apparatus each being coupled to the SOR ring and being arranged to expose a wafer to a mask pattern with X-­rays contained in synchrotron radiation from the SOR ring (8) to thereby print the mask pattern on the wafer. Specific arrangement is provided to allow communication of a control of the SOR ring and respective controls of the exposure apparatuses. If any abnormality such as vacuum leakage occurs in one exposure apparatus, the information is transmitted to all the controls to start, in all the exposure apparatuses, appropriate operations to protect the exposure apparatuses against the abnormality. This makes it possible to prevent stoppage of the SOR exposure system as a whole even when any abnormality occurs in one exposure apparatus.
    • 同步加速器轨道辐射(SOR)曝光系统包括SOR环(8)和多个(15a-15c)曝光装置,每个曝光装置耦合到SOR环,并被布置成将晶片暴露于具有X射线 来自SOR环(8)的同步加速器辐射,从而在晶片上印刷掩模图案。 提供具体的布置以允许SOR环的控制和曝光设备的各个控制的通信。 如果在一个曝光装置中发生诸如真空泄漏的异常,则在所有曝光装置中,将所有信息传送到所有控制开始,以保​​护曝光装置免受异常。 这使得即使在一个曝光设备中发生任何异常,也可以防止SOR曝光系统的整体停止。
    • 6. 发明公开
    • An exposure apparatus
    • 曝光装置
    • EP0357423A3
    • 1991-02-27
    • EP89308821.1
    • 1989-08-31
    • CANON KABUSHIKI KAISHA
    • Mori, TetsuzoSakamoto, EijiHara, ShinichiUda, KojiShimoda, IsamuUzawa, Shinichi
    • G03F7/20
    • G03F7/709G03F7/707G03F7/70716G03F7/70866G03F7/70875
    • The mask(3) and the wafer (4) are closely disposed, and predetermined exposure energy is applied to the respective shot areas of the wafer(4) through the mask (3). The exposure energy is soft-X-ray source, for example. The pattern of the mask (3) is transferred onto the respective shot areas in a step-and-repeat manner. In the apparatus (fig 1), a temperature control medium liquid is supplied into the wafer chuck (5) for supporting the wafer (4) at the exposure position. The flow rate is different during the exposure operation than during the non-­exposure-operation. The flow control (10) is determined in consideration of the wafer chuck vibration attributable to the supply of the liquid medium and also to the heat generation in the wafer(4) by the exposure energy, so that the vibration of the wafer chuck (5) during the exposure operation is suppressed, and simultaneously, the temperature rise of the wafer (4) can be also suppressed. The pattern transfer from the mask (3) to the wafer (4) can be precisely performed.
    • 掩模(3)和晶片(4)紧密配置,通过掩模(3)将预定的曝光能量施加到晶片(4)的各个照射区域。 例如,曝光能量是软X射线源。 将掩模(3)的图案以分步重复的方式转移到各个照射区域上。 在该装置(图1)中,温度控制介质液体被供应到晶片卡盘(5)中以在曝光位置处支撑晶片(4)。 曝光操作期间的流速与非曝光操作期间的流速不同。 考虑到由液体介质的供给引起的晶片卡盘振动以及由于曝光能量引起的晶片(4)中的发热,确定流量控制器(10),从而晶片卡盘(5)的振动 )被抑制,同时,晶片(4)的温度上升也可被抑制。 可以精确地执行从掩模(3)到晶片(4)的图案转移。
    • 9. 发明公开
    • An exposure apparatus
    • Belichtungseinrichtung。
    • EP0357423A2
    • 1990-03-07
    • EP89308821.1
    • 1989-08-31
    • CANON KABUSHIKI KAISHA
    • Mori, TetsuzoSakamoto, EijiHara, ShinichiUda, KojiShimoda, IsamuUzawa, Shinichi
    • G03F7/20
    • G03F7/709G03F7/707G03F7/70716G03F7/70866G03F7/70875
    • The mask(3) and the wafer (4) are closely disposed, and predetermined exposure energy is applied to the respective shot areas of the wafer(4) through the mask (3). The exposure energy is soft-X-ray source, for example. The pattern of the mask (3) is transferred onto the respective shot areas in a step-and-repeat manner. In the apparatus (fig 1), a temperature control medium liquid is supplied into the wafer chuck (5) for supporting the wafer (4) at the exposure position. The flow rate is different during the exposure operation than during the non-­exposure-operation. The flow control (10) is determined in consideration of the wafer chuck vibration attributable to the supply of the liquid medium and also to the heat generation in the wafer(4) by the exposure energy, so that the vibration of the wafer chuck (5) during the exposure operation is suppressed, and simultaneously, the temperature rise of the wafer (4) can be also suppressed. The pattern transfer from the mask (3) to the wafer (4) can be precisely performed.
    • 掩模(3)和晶片(4)紧密配置,通过掩模(3)将预定的曝光能量施加到晶片(4)的各个照射区域。 例如,曝光能量是软X射线源。 掩模(3)的图案以分步重复的方式被转印到相应的照射区域上。 在装置(图1)中,将温度控制介质液体供应到用于在曝光位置支撑晶片(4)的晶片卡盘(5)。 曝光操作期间的流量不同于非曝光操作期间的流量。 考虑到由于液体介质的供给引起的晶片卡盘振动以及通过曝光能量在晶片(4)中的发热而确定流量控制(10),使得晶片卡盘(5)的振动 ),并且同时也可以抑制晶片(4)的温度上升。 可以精确地执行从掩模(3)到晶片(4)的图案转印。