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2. 发明公开

EP0496259A1 High-Tc microbridge superconductor device utilizing stepped edge-to-edge sns junction 失效
标题翻译： Mikroverbindungsvorrichtung aus Hochtemperatursupraleiter mit gestufter Kante zur Kante SNS Verbindung。
公开(公告)号：EP0496259A1
公开(公告)日：1992-07-29
申请号：EP92100564.1
申请日：1992-01-15
申请人： BIOMAGNETIC TECHNOLOGIES, INC.
发明人： DiIorio, Mark S. , Yoshizumi, Shozo , Yang, Kai-Yueh
IPC分类号： H01L39/24 , H01L39/22
CPC分类号： H01L39/225 , Y10S505/702 , Y10S505/731 , Y10S505/742
摘要： A microbridge superconductor device includes a substrate (26), made of a material such as LaAlO₃, having a lower planar substrate surface (40), an inclined surface (42) having an overall upward inclination of from about 20 to about 80 degrees from the plane of the lower planar substrate surface (40), and an upper planar substrate surface (44) parallel to the lower planar substrate surface and separated from the lower planar substrate surface by the inclined surface. A layer of a c-axis oriented superconductor material (50), made of a material such as YBa₂Cu₃O 7-x , is epitaxially deposited on the lower planar substrate surface, and has an exposed a-axis edge adjacent the intersection of the lower planar substrate surface with the inclined surface. The a-axis exposed edge is beveled away from the intersection. A layer of a c-axis oriented superconductor material (52) is epitaxially deposited on the upper planar substrate surface, and has an exposed a-axis edge adjacent the inclined surface. A gap (62) lies between the two a-axis exposed edges. A layer of a non-superconductor material (60), such as silver, lies in the gap between the two exposed a-axis edges, thereby defining a SNS superconductor microbridge device. The layers of superconductor material are preferably patterned to form a Josephson junction device such as a superconducting quantum interference device.
摘要翻译：微桥超导体器件包括由诸如LaAlO 3的材料制成的具有下平坦衬底表面（40）的衬底（26），倾斜表面（42）具有从所述衬底的整体向上倾斜约20至约80度下平面状基板表面（40）的平面和平行于下平面基板表面的上平面基板表面（44），并且通过倾斜表面与下平面基板表面分离。由诸如YBa2Cu3O7-x的材料制成的c轴取向的超导体材料层（50）外延地沉积在下平面基板表面上，并且具有与下平面基板相交的暴露的a轴边缘表面与倾斜面。 a轴露出的边缘与交点相反。在上平面基板表面上外延地沉积c轴取向超导体材料（52）的层，并且具有与倾斜表面相邻的暴露的a轴边缘。间隙（62）位于两个a轴外露边缘之间。非超导材料（60）如银的层位于两个暴露的a轴边缘之间的间隙中，从而限定SNS超导体微桥装置。超导体材料层优选地被图案化以形成诸如超导量子干涉装置的约瑟夫逊结装置。

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