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1. 发明公开

EP2966077A4 CHALCOGEN-CONTAINING ORGANIC COMPOUND AND USE THEREFOR 有权转让
标题翻译：新型含有碳黑的有机化合物及其用途
公开(公告)号：EP2966077A4
公开(公告)日：2016-12-14
申请号：EP14760923
申请日：2014-03-05
申请人： JNC CORP , PI-CRYSTAL INC
发明人： TAKEYA JUNICHI , OKAMOTO TOSHIHIRO , MITSUI CHIKAHIKO , MATSUSHITA TAKESHI
IPC分类号： C07D493/04 , C07D495/04 , H01L21/368 , H01L29/786 , H01L51/05 , H01L51/30 , H01L51/40
CPC分类号： H01L51/0073 , C07D493/04 , C07D495/04 , C07D517/04 , H01L51/0071 , H01L51/0074 , H01L51/0558
摘要： A compound is represented by Formula (1): wherein, each X is independently oxygen, sulfur, or selenium; m is 0 or 1; each n is independently 0 or 1; R 1 - R 3 are each independently, for example, hydrogen or alkyl having 1 to 20 carbons; wherein (i) in the case of m = 0, it is excluded that all of R 1 - R 3 are hydrogen at the same time; (ii) in the case of m = 0, n = 0 and in the case that m is 0, one of n is 0 and the other is 1, it is excluded that "both of X are sulfur and all R 3 s are the same atoms or groups at the same time"; (iii) in the case of m = 0, n = 1, it is excluded that all R 3 s are the same atoms or groups at the same time, and at least one of R 3 s is hydrogen.

2. 发明公开

EP3845525A1 CHALCOGEN-CONTAINING ORGANIC COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR FILM, AND ORGANIC FIELD-EFFECT TRANSISTOR 有权转让
公开(公告)号：EP3845525A1
公开(公告)日：2021-07-07
申请号：EP19855122.8
申请日：2019-08-29
申请人： The University of Tokyo , Pi-Crystal Inc.
发明人： OKAMOTO,Toshihiro , TAKEYA,Junichi , MITANI,Masato , ITO,Yosuke , MATSUMURO,Tomonori
IPC分类号： C07D333/50 , H01L29/786 , H01L51/05 , H01L51/30
摘要： Provided is a novel chalcogen-containing organic semiconductor compound having excellent carrier mobility. The compound is represented by Formula (1a) or (1b): [Chem. 1]
where in Formulas (1a) and (1b), X represents S, O, or Se, and R 1 each independently represents a hydrogen atom, a halogen atom, an alkyl group, an aryl group, an aralkyl group, a pyridyl group, a furyl group, a thienyl group, or a thiazolyl group.

3. 发明公开

EP4239669A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME 审中-实审
公开(公告)号：EP4239669A1
公开(公告)日：2023-09-06
申请号：EP21885864.5
申请日：2021-10-08
申请人： The University of Tokyo , Pi-Crystal Inc. , Organo-Circuit Incorporation
发明人： TAKEYA, Junichi , WATANABE, Kazuyoshi , NOZAWA, Han , ONO, Yuichi
IPC分类号： H01L23/14 , H01L23/29 , H01L23/31
摘要： Provided is a semiconductor device and a method of manufacturing the semiconductor device that is capable of improving the connection reliability between an electronic element and a substrate in a semiconductor device in which the electronic element is fixed to the substrate. The semiconductor device includes: a substrate 10 provided with wirings and wiring connection parts 12 connected to the wirings; electronic elements 20, 30, 40, and 50 electrically connected to the wiring connection parts 12 and fixed to the substrate; and a resin film 60 laminated on one surface of the substrate 10, conforming to the shapes of the electronic elements 20, 30, 40, and 50, and covering the electronic elements 20, 30, 40, and 50.

4. 发明公开

EP2991129A1 ORGANIC SEMICONDUCTOR THIN FILM PRODUCTION METHOD 有权转让
标题翻译：有机半导体薄膜生产方法
公开(公告)号：EP2991129A1
公开(公告)日：2016-03-02
申请号：EP14787747.6
申请日：2014-04-23
申请人： Osaka University , Pi-Crystal Inc.
发明人： TAKEYA Junichi , SOEDA Junshi
IPC分类号： H01L51/40 , B05C5/02 , B05C11/04 , H01L21/336 , H01L21/368 , H01L29/786 , H01L51/05
CPC分类号： H01L51/0003 , B05C5/02 , B05C5/0254 , B05C11/028 , B05C11/04 , C30B19/063 , C30B29/58 , H01L51/0068 , H01L51/0508 , H01L51/0558
摘要： A raw material solution (6), in which an organic semiconductor material is dissolved in a solvent, is supplied to a substrate (1). The solvent is evaporated so that crystals of the organic semiconductor material are precipitated. Thus, an organic semiconductor thin film (7) is formed on the substrate (1). An edge forming member (2) having a contact face (2a) on one side is used and located opposite the substrate (1) so that the plane of the contact face (2a) intersects the surface of the substrate (1) at a predetermined angle. The raw material solution (6) is supplied to the substrate (1) and formed into a droplet (6a) that comes into contact with the contact face (2a). The substrate (1) and the edge forming member (2) are moved relative to each other in a direction parallel to the surface of the substrate (1) so as to separate the edge forming member (2) from the droplet (6a), and while the raw material solution (6) is supplied so that a change in size of the droplet (6a) with the relative movement is maintained within a predetermined range, the solvent contained in the droplet (6a) is evaporated to form the organic semiconductor thin film (7) on the substrate (1) after the contact face (2a) has been moved. In this manner, a large-area organic semiconductor single crystal thin film having high charge mobility can be manufactured by a simple process using a solvent evaporation method based on droplet formation.
摘要翻译：将其中有机半导体材料溶解在溶剂中的原料溶液（6）供应到基板（1）。溶剂蒸发使得有机半导体材料的晶体沉淀。由此，在基板（1）上形成有机半导体薄膜（7）。使用在一侧具有接触面（2a）的边缘形成构件（2），并将其定位在与基底（1）相对的位置，使得接触面（2a）的平面与基底（1）的表面以预定的角度角度。原料溶液（6）供给至基板（1），并形成与接触面（2a）接触的液滴（6a）。使基板1和边缘形成构件2在与基板1的表面平行的方向上相对移动，从而使边缘形成构件2与液滴6a分离，并且在提供原料溶液（6）以使相对移动时液滴（6a）的尺寸变化保持在预定范围内时，使包含在液滴（6a）中的溶剂蒸发以形成有机半导体在所述接触面（2a）移动之后，在所述基板（1）上形成薄膜（7）。以这种方式，具有高电荷迁移率的大面积有机半导体单晶薄膜可以通过使用基于液滴形成的溶剂蒸发方法的简单工艺来制造。

5. 发明授权

EP2966077B1 CHALCOGEN-CONTAINING ORGANIC COMPOUND AND USE THEREFOR 有权转让
公开(公告)号：EP2966077B1
公开(公告)日：2020-04-01
申请号：EP14760923.4
申请日：2014-03-05
申请人： JNC Corporation , PI-CRYSTAL INC.
发明人： TAKEYA, Junichi , OKAMOTO, Toshihiro , MITSUI, Chikahiko , MATSUSHITA, Takeshi
IPC分类号： C07D493/04 , C07D495/04 , H01L21/368 , H01L29/786 , H01L51/05 , H01L51/30 , H01L51/40

6. 发明公开

EP2991129A4 ORGANIC SEMICONDUCTOR THIN FILM PRODUCTION METHOD 有权转让
标题翻译：制造有机半导体薄层的方法
公开(公告)号：EP2991129A4
公开(公告)日：2016-12-14
申请号：EP14787747
申请日：2014-04-23
申请人： UNIV OSAKA , PI-CRYSTAL INC
发明人： TAKEYA JUNICHI , SOEDA JUNSHI
IPC分类号： H01L51/40 , B05C5/02 , B05C11/04 , H01L21/336 , H01L21/368 , H01L29/786 , H01L51/05
CPC分类号： H01L51/0003 , B05C5/02 , B05C5/0254 , B05C11/028 , B05C11/04 , C30B19/063 , C30B29/58 , H01L51/0068 , H01L51/0508 , H01L51/0558

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