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1. 发明公开

EP2778770A3 Method of fabricating and operating an optical modulator 有权转让
标题翻译：制造工艺和一种控制光学调制器
公开(公告)号：EP2778770A3
公开(公告)日：2015-11-04
申请号：EP14020022.1
申请日：2014-03-03
申请人： EMCORE Corporation
发明人： Blauvelt, Henry A. , He, Xiaoguang , Vahala, Kerry
IPC分类号： G02F1/025 , H01S5/026
CPC分类号： H01S5/0427 , G02F1/0121 , G02F1/025 , H01S5/026 , H01S5/0265 , H01S5/042 , H01S5/0425 , H01S5/06251 , H01S5/1028 , H01S5/34306 , H04B10/2575 , H04B10/516 , Y10T29/49002
摘要： A method of making an optical modulator by determining the material composition of the quantum well region in the waveguide portion of the modulator so that the modulator is transparent at a gain peak wavelength that is greater than the predetermined wavelength by a predetermined amount, and fabricating the modulator with the determined material composition.

2. 发明授权

EP1352279B1 PROCESS FOR COUPLING OPTICAL ELEMENTS TO OPTOELECTRONIC DEVICES 有权
标题翻译：方法配对光电器件的光学元件
公开(公告)号：EP1352279B1
公开(公告)日：2011-07-27
申请号：EP01988146.5
申请日：2001-11-20
申请人： Emcore Corporation
发明人： ANDERSON, Gene, R. , ARMENDARIZ, Marcelino, G. , BRYAN, Robert, P. , CARSON, Richard, F. , CHU, Dahwey , DUCKETT, Edwin, B., III , GIUNTA, Rachel, Knudsen , MITCHELL, Robert, T. , MCCORMICK, Frederick, B. , PETERSON, David, W. , RISING, Merideth, A. , REBER, Cathleen, A. , REYSEN, Bill, H.
IPC分类号： G02B6/42
CPC分类号： G02B6/4277 , G02B6/266 , G02B6/3885 , G02B6/4201 , G02B6/4204 , G02B6/4206 , G02B6/4207 , G02B6/421 , G02B6/4212 , G02B6/4219 , G02B6/4227 , G02B6/4239 , G02B6/4249 , G02B6/426 , G02B6/4281 , G02B6/4283 , G02B6/4286
摘要： A process is provided for aligning and connecting at least one optical fiber to at least one optoelectronic device so as to couple light between at least one optical fiber and at least one optoelectronic device. One embodiment of this process comprises the following steps: (1) holding at least one optical element close to at least one optoelectronic device, at least one optical element having at least a first end; (2) aligning at least one optical element with at least one optoelectronic device; (3) depositing a first non-opaque material on a first end of at least one optoelectronic device; and (4) bringing the first end of at least one optical element proximate to the first end of at least one optoelectronic device in such a manner that the first non-opaque material contacts the first end of at least one optoelectronic device and the first end of at least one optical element. The optical element may be an optical fiber (114), and the optoelectronic device may be a vertical cavity surface emitting laser (116). The first non-opaque material (106) may be a UV optical adhesive that provides an optical path and mechanical stability. In another embodiment of the alignment process, the first end of at least one optical element is brought proximate to the first end of at least one optoelectronic device in such a manner that an interstitial space exists between the first end of at least one optoelectronic device and the first end of at least one optical element. This interstitial space is then filled with a non-opaque material after aligning of the optical element and the optoelectronic device.

3. 发明公开

EP1871005A1 In-line distortion cancellation circuits for linearization of electronic and optical signals with phase and frequency adjustment 审中-公开
标题翻译： In-line-Verzerrungsunterdrückungsschaltungenfürelektronische und optische Signalenlinearisierung mit Phasen- und Frequenzabgleich
公开(公告)号：EP1871005A1
公开(公告)日：2007-12-26
申请号：EP06023469.7
申请日：2006-11-10
申请人： Emcore Corporation
发明人： Peral, Evia
IPC分类号： H03F1/32 , H03F3/08 , H04B10/155
CPC分类号： H03F3/08 , H03F1/32 , H03F1/3241 , H03F1/3276 , H03F2200/63 , H04B10/58
摘要： A distortion circuit is provided for correcting the distortion from a nonlinear circuit element by generating a frequency dependent signal having a sign opposite to the distortion signal produced by the nonlinear circuit and substantially the same magnitude. The distortion circuit includes an input signal (IN) and a first nonlinear device (D1) coupled to the input signal (IN) for generating a first signal and where the first nonlinear device (D1) has a first bias level (D1BIAS). Also included is a second nonlinear device (D2) different from the first nonlinear device (D1) and coupled to the first nonlinear device (D1) for modifying the first signal to produce an output second signal, the second nonlinear device (D2) having a second bias level (D2BIAS). A bias control means is provided for adjusting the first and said second bias levels (D1BIAS,D2BIAS) so that the magnitude, phase and frequency of the output second signal can be adjusted.
摘要翻译：提供了一种失真电路，用于通过产生具有与非线性电路产生的失真信号相反的符号的频率相关信号和基本上相同的幅度来校正来自非线性电路元件的失真。失真电路包括输入信号（IN）和耦合到输入信号（IN）的第一非线性器件（D1），用于产生第一信号，其中第一非线性器件（D1）具有第一偏置电平（D1BIAS）。还包括与第一非线性装置（D1）不同的第二非线性装置（D2），并耦合到第一非线性装置（D1），用于修改第一信号以产生输出第二信号，第二非线性装置（D2）具有第二偏差水平（D2BIAS）。提供偏置控制装置用于调整第一和第二偏置电平（D1BIAS，D2BIAS），使得可以调节输出第二信号的幅度，相位和频率。

4. 发明公开

EP1841026A2 Method of fabricating single mode vcsel for optical mouse 审中-公开
标题翻译： Verfahren zur Herstellung einer单模VCSELfüreinen optischen Maus
公开(公告)号：EP1841026A2
公开(公告)日：2007-10-03
申请号：EP06025379.6
申请日：2006-12-07
申请人： Emcore Corporation
发明人： Collins, Douglas , Li, Neinyi
IPC分类号： H01S5/183
CPC分类号： H01S5/18327 , H01S5/0425 , H01S5/18311 , H01S5/2059 , H01S2301/166 , H01S2301/18
摘要： A surface emitting laser having a substrate with top and bottom surfaces, a first stack of mirror layers of alternating indices of refraction located upon the top surface of the substrate and an active layer disposed over the first stack. The surface emitting layer also includes a second stack of mirror layers of alternating indices of refraction disposed over the active layer and a reduced-diameter mirror extension portion of the second stack that forms an optical aperture of the surface emitting laser extending outwards from a center portion of the second stack on a side of the second stack opposite the active layer.
摘要翻译：具有具有顶表面和底表面的基底的表面发射激光器，位于基底顶表面上的交替折射率的第一层反射镜层和设置在第一叠层上的有源层。表面发射层还包括设置在有源层上的交替折射率的第二层反射镜层和第二层叠体的缩小直径镜延伸部分，其形成从中心部分向外延伸的表面发射激光器的光学孔径的第二堆叠在第二堆叠的与活性层相对的一侧上。

5. 发明公开

EP1564815A1 Lateral conduction schottky diode with plural mesas 有权
标题翻译： Laterale Schottkydiode mit mehreren Mesa
公开(公告)号：EP1564815A1
公开(公告)日：2005-08-17
申请号：EP05290361.4
申请日：2005-02-17
申请人： Emcore Corporation
发明人： Shelton, Bryan S. , Liu, Linlin , Ceruzzi, Alex D. , Murphy, Michael , Pophristic, Milan , Peres, Boris , Stall, Richard A. , Gao, Xiang , Eliashevich, Ivan
IPC分类号： H01L29/872
CPC分类号： H01L24/81 , H01L29/0692 , H01L29/2003 , H01L29/872 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01023 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/01087 , H01L2924/014 , H01L2924/12032 , H01L2924/00
摘要： A lateral conduction Schottky diode (300) includes multiple mesa regions upon which Schottky contacts (310) are formed and which are at least separated by ohmic contacts (316) to reduce the current path length and reduce current crowding in the Schottky contact, thereby reducing the forward resistance of a device. The multiple mesas may be isolated from one another and have sizes and shapes optimized for reducing the forward resistance. Alternatively, some of the mesas may be finger-shaped and intersect with a central mesa or a bridge mesa, and some or all of the ohmic contacts are interdigitated with the finger-shaped mesas. The dimensions of the finger-shaped mesas and the perimeter of the intersecting structure may be optimized to reduce the forward resistance. The Schottky diodes may be mounted to a submount in a flip chip arrangement that further reduces the forward voltage as well as improves power dissipation and reduces heat generation.
摘要翻译：横向导通肖特基二极管（300）包括形成肖特基接触（310）并且至少由欧姆接触（316）隔开的多个台面区域，以减少电流路径长度并减少肖特基接触中的电流拥挤，从而减少设备的正向阻力。多个台面可以彼此隔离并且具有优化的尺寸和形状以减少正向阻力。或者，一些台面可以是手指形状并且与中央台面或桥台面相交，并且部分或全部欧姆接触件与指状台面相互交错。指状台面的尺寸和相交结构的周长可以被优化以减小正向阻力。肖特基二极管可以以倒装芯片布置的方式安装在底座上，这进一步降低了正向电压，并且提高了功率消耗并减少了发热。

6. 发明公开

EP1428267A2 SOLAR CELL HAVING A BYPASS DIODE FOR REVERSE BIAS PROTECTION AND METHOD OF FABRICATION 有权
标题翻译：旁路二极管，用于保护，禁止BIAS逆太阳能电池
公开(公告)号：EP1428267A2
公开(公告)日：2004-06-16
申请号：EP02765896.2
申请日：2002-07-26
申请人： Emcore Corporation , Chaw-Long, Chu
发明人： CHAW-LONG, Chu
IPC分类号： H01L31/068 , H01L31/18 , H01L27/142
CPC分类号： H01L31/0687 , H01L31/0443 , Y02E10/544 , Y02P70/521
摘要： Reverse bias protection for a solar cell is provided with a diode on the solar cell. In one embodiment, the Schottky diode is formed at the interface between a metallic diode contact and a semiconductor substrate on which the solar cell is grown. The solar cell includes a Ge substrate, which may further include a photoactive junction. In one embodiment, the Schottky diode is provided in a trough or recess extending through the solar cell layers to the front surface of the substrate. In this embodiment, the Schottky diode is electrically connected across some or all of the cells of the solar cell structure with a jumper bar or other suitable interconnect. In another embodiment, the Schottky diode is provided on a back surface of the substrate, with a C-clamp interconnecting at least one solar cell contact to the diode contact.

7. 发明公开

EP1358368A1 SUSCEPTORLESS REACTOR FOR GROWING EPITAXIAL LAYERS ON WAFERS BY CHEMICAL VAPOR DEPOSITION 有权
标题翻译： SUSZEPTORLOSER反应器日益增长的外延层在晶片上的CVD BY
公开(公告)号：EP1358368A1
公开(公告)日：2003-11-05
申请号：EP01964250.3
申请日：2001-08-21
申请人： Emcore Corporation
发明人： BOGUSLAVSKIY, Vadim , GURARY, Alexander
IPC分类号： C30B25/02 , C30B25/08 , C30B25/12 , C30B25/14
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/46 , C30B25/12 , H01L21/68771 , H01L21/68785 , H01L21/68792 , Y10S117/90 , Y10T117/10
摘要： A method of growing epitaxial layers on a wafer is provided and includes providing a wafer carrier having a surface for retaining the wafer; placing the wafer on the wafer-retaining surface of the wafer carrier while the wafer carrier is in a loading position separated from a spindle; transporting the wafer carrier toward the spindle; detachably mounting the wafer carrier on the upper end of the spindle for rotation therewith; and rotating the spindle and the wafer carrier while introducing one or more reactants into the reaction chamber. The invention also described several embodiments and variants of the method of the invention.

8. 发明公开

EP1142024A1 III-NITRIDE QUANTUM WELL STRUCTURES WITH INDIUM-RICH CLUSTERS AND METHODS OF MAKING THE SAME 审中-公开
标题翻译： III NITRIDE QUANTUM POT结构铟集群及其制造工艺
公开(公告)号：EP1142024A1
公开(公告)日：2001-10-10
申请号：EP99959003.7
申请日：1999-11-16
申请人： Emcore Corporation
发明人： KARLICEK, Robert, F., Jr. , TRAN, Chuong Highlink Technology Corporation
IPC分类号： H01L29/06 , H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/007 , H01L33/32
摘要： In deposition of a quantum well structure (18) for a light emitting diode, each well layer (34) is formed by a two-phase process. In a first phase, relatively high flux rates of gallium and indium are employed. In the second phase, lower flux rates of gallium and indium are used. The well layer (34) is formed with a composition which varies across the horizontal extent of the layer (34), and which typically includes clusters of indium-enriched material (36) surrounded by region of indium-poor material (38). The resulting structure exhibits enhanced brightness and a narrow, well-defined emission spectrum.

9. 发明公开

EP1141990A1 APPARATUS FOR PERFORMING WAVELENGTH-CONVERSION USING PHOSPHORS WITH LIGHT EMITTING DIODES 审中-公开
标题翻译： DEVICE波长变换使用具有光的发光二极管物质
公开(公告)号：EP1141990A1
公开(公告)日：2001-10-10
申请号：EP99970780.5
申请日：1999-10-21
申请人： Sarnoff Corporation , Emcore Corporation
发明人： GARBUZOV, Dmitri, Z. , CONNOLLY, John, C. , KARLICEK, Robert, F., Jr. , FERGUSON, Ian, T.
IPC分类号： H01J1/62 , H01J40/16 , H01J43/04
CPC分类号： H01L33/50 , H01L27/153 , H01L33/10 , H01L33/20 , H01L33/46
摘要： An apparatus (500), comprises an active region (530), a phosphor layer (550) and a reflective layer (520). The active region is configured to emit light having a first band of wavelengths from a first group of wavelengths. The phosphor layer is disposed between and in contact with the active region and an exterior medium. The phosphor layer is configured to convert the first band of wavelengths of light emitted from the active region to a second band of wavelengths. A center wavelength of the second band of wavelengths is greater than a center wavelength of the first band of wavelengths. The reflective layer is optically coupled to the active region. The active region is disposed between the reflective layer and the phosphor layer. The reflective layer is configured to reflect at least the first band of wavelengths and the second band of wavelengths.

10. 发明公开

EP0948664A1 LIQUID VAPORIZER SYSTEM AND METHOD 失效
标题翻译：系统和方法的液体VERDÄMPFUNG
公开(公告)号：EP0948664A1
公开(公告)日：1999-10-13
申请号：EP97943530.0
申请日：1997-09-30
申请人： Emcore Corporation
发明人： LI, Ting, Kai , GURARY, Alexander, I. , SCOTT, Dane, C.
IPC分类号： C23C16
CPC分类号： C23C16/4486
摘要： A liquid vaporizer apparatus (40) and method for chemical vapor deposition of liquid solutions into a controlled atmosphere of a CVD reaction chamber (50). The apparatus comprises an atomizer (24), gas curtain (27), heated porous media disks (52, 54, 56) and a carrier gas mixer. The invention provides for the independent control of temperature, pressure and precursor stoichiometry during the atomizing and vaporization process thereby rendering the precise precursor vapor quality and quantity required for a given application. The invention employs the use of removable porous media disks (52, 54, 56) which may be varied according to the desired operating pressure and precursors. In operation, the apparatus provides for a liquid precursor to first be atomized into a mist using an ultrasonic nozzle, then vaporized by heated media disks (52, 54, 56), and mixed with a carrier gas, then forced into the CVD reaction chamber (50).

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