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    • 2. 发明公开
    • PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    • VERFAHREN ZU IHRER HERSTELLUNG的照片
    • EP2432024A1
    • 2012-03-21
    • EP09843293.3
    • 2009-04-14
    • Mitsubishi Electric Corporation
    • NAKATANI, Mitsunori
    • H01L31/04
    • H01L31/022425H01L31/02168H01L31/028H01L31/03682H01L31/056H01L31/068Y02E10/547
    • The method includes: steps of forming an n-type diffusion layer having an n-type impurity diffused thereon at a first surface side of a p-type silicon substrate; forming a reflection prevention film on the n-type diffusion layer; forming a back-surface passivation film made of an SiONH film on a second surface of the silicon substrate; forming a paste material containing silver in a front-surface electrode shape on the reflection prevention film; forming a front surface electrode that is contacted to the n-type diffusion layer by sintering the silicon substrate; forming a paste material containing a metal in a back-surface electrode shape on the back-surface passivation film; and forming a back surface electrode by melting a metal in the paste material by irradiating laser light onto a forming position of the back surface electrode and by solidifying the molten metal.
    • 该方法包括:在p型硅衬底的第一表面侧形成其上扩散有n型杂质的n型扩散层的步骤; 在n型扩散层上形成防反射膜; 在所述硅衬底的第二表面上形成由SiONH膜制成的背面钝化膜; 在反射防止膜上形成表面电极形状的含有银的糊料; 形成通过烧结硅衬底与n型扩散层接触的前表面电极; 在背面钝化膜上形成背面电极形状的含有金属的糊料; 以及通过将激光照射到所述背面电极的形成位置并使所述熔融金属固化而使所述糊料中的金属熔融而形成背面电极。