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    • 1. 发明公开
    • Extended life capacitor and method
    • Kondensator mit langer Lebensdauer und Verfahren zu seiner Herstellung。
    • EP0257760A2
    • 1988-03-02
    • EP87306153.5
    • 1987-07-10
    • STEMCOR CORPORATION
    • Miller, John R.
    • H01G9/08H01G9/00
    • H01G9/08Y02E60/13
    • An extended life capacitor is disclosed in which an enclosing body is made from a tantalum can (12) and tanta­lum cap (17) and enclosing a plurality of double layer capaci­tor cells (31). Each of the capacitor cells (31) includes a con­ductive material, such as activated carbon (34,35), with an aqueous electrolyte therein such as dilute sulfuric acid. In the preferred embodiment, this is about 38% by weight of sulfuric acid, and the remained water. Lead-­ins (23,27) are provided to make electronic connection to the two ends of the capacitor cell stack as anode and cathode electrodes. The entire unit is hermetically sealed and the electrodes are at least partly coated with a noble metal such as gold.
    • 公开了一种延长寿命的电容器,其中封闭体由钽罐(12)和钽帽(17)制成并且包围多个双层电容器电池(31)。 每个电容器单元(31)包括诸如活性炭(34,35)的导电材料,其中含有诸如稀硫酸的含水电解质。 在优选的实施方案中,这是约38重量%的硫酸和剩余的水。 提供导线(23,27)以使电容器电池组的两端电连接为阳极和阴极。 整个单元是密封的,并且电极至少部分地涂覆有诸如金的贵金属。
    • 4. 发明公开
    • Semiconductor dopant source
    • DotierungsquellefürHalbleiter。
    • EP0266030A2
    • 1988-05-04
    • EP87307232.6
    • 1987-08-14
    • STEMCOR CORPORATION
    • Bonny, Alan M.Wilson, JackGustaferro, Robert A.
    • H01L21/22C30B31/16
    • H01L21/2225Y10S252/95Y10S252/951Y10T428/249969Y10T428/24997
    • Semiconductor dopant sources are prepared by mixing particles of elemental silicon and at least one dopant oxide and heating the mixture to a temperature sufficient to initiate a reduction reaction while excluding external oxygen sources from affecting the reaction. The reaction can be initiated in a furnace, provided the gaseous ambient is controlled, or can be initiated in air if the mixture is heated sufficiently rapidly, e.g. by heating with electromagnetic energy at microwave frequencies. The dopant source produced includes a fused, amorphous matrix of silicon-oxygen-dopant atoms containing inclusions of elemental dopant and, preferably, inclusions of elemental silicon. Embodiments of sources prepared from antimony trioxide slowly evolve antimony, have a long life and repeatedly and predictably dope silicon at commercially useful levels.
    • 通过混合元素硅和至少一种掺杂剂氧化物的颗粒并将混合物加热到足以引发还原反应的温度,同时排除外部氧源来影响反应来制备半导体掺杂剂源。 反应可以在炉中开始,只要气体环境受到控制,或者如果混合物被充分快速加热,则可以在空气中引发反应。 通过微波频率的电磁能加热。 产生的掺杂剂源包括含有元素掺杂剂夹杂物和优选元素硅夹杂物的硅 - 氧 - 掺杂剂原子的熔融无定形基质。 由三氧化锑制备的源的实施方案缓慢地释放锑,具有长的寿命并且可重复地且可预测地以商业上有用的水平掺杂硅。
    • 7. 发明公开
    • Autogenous attrition grinding
    • Autogene Zerkleinerung durch Abreibung。
    • EP0247895A2
    • 1987-12-02
    • EP87304788.0
    • 1987-05-29
    • STEMCOR CORPORATION
    • Boecker, Wolfgang D.G.Korzekwa, Tadeusz M.
    • B02C17/16B02C17/14B02C17/20
    • B02C17/14B02C17/16B02C17/20C04B35/565
    • A method for grinding silicon carbide to a submicron powder which comprises grinding a silicon carbide feed material having an average particle size of between 1 and 2OO microns in a liquid slurry in a contamination free high energy autogenous attrition mill in the presence of silicon carbide media for a sufficient time to obtain a specific surface area of at least 5m²/g and preferably at least 9m²/g. The media is of high purity and has an average particle size of less than 4mm and preferably less than 2.5mm. The ground material is then further treated so that the average particle size is less than one micron and so that greater than 97 numerical percent of the particles of the finished powder is smaller than 5 microns. The invention includes the finished powder.
    • 一种将碳化硅粉碎成亚微米粉末的方法,该方法包括在碳化硅介质的存在下,在无污染的高能量自磨磨机的液体浆料中研磨平均粒径为1-200微米的碳化硅原料, 足够的时间来获得至少5m 2 / g,优选至少9m 2 / g的比表面积。 介质的纯度高,平均粒径小于4mm,优选小于2.5mm。 然后将研磨材料进一步处理,使得平均粒度小于1微米,使得成品粉末的颗粒大于97数百分比小于5微米。 本发明包括成品粉末。