专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP4397782A1 SPUTTERING APPARATUS AND FILM FORMATION METHOD 审中-实审
公开(公告)号：EP4397782A1
公开(公告)日：2024-07-10
申请号：EP21955932.5
申请日：2021-08-31
申请人： Canon Anelva Corporation
发明人： KARINO, Susumu , TODA, Tetsuro , FUJIHARA, Tooru
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , H01J37/3417 , H01J37/3408 , H01J37/347 , H01J37/3435 , C23C14/3407 , H01J37/3423
摘要： A sputtering apparatus includes: a processing chamber; a substrate holder configured to hold a substrate with a substrate holding surface in a processing space in the processing chamber; a first target holder configured to hold a first target such that a first surface of the first target faces the processing space; and a second target holder configured to hold a second target such that a second surface of the second target faces the processing space, wherein the first target holder holds the first target such that an orthogonal projection vector of a first normal vector, which is a normal vector of the first surface, with respect to a virtual plane including the substrate holding surface is directed to a direction away from the substrate, and the second target holder holds the second target such that an orthogonal projection vector of a second normal vector, which is a normal vector of the second surface, with respect to the virtual plane is directed to a direction away from the substrate.

2. 发明授权

EP3544390B1 X-RAY GENERATOR AND METHOD OF MANUFACTURING THEREOF 有权
公开(公告)号：EP3544390B1
公开(公告)日：2021-09-22
申请号：EP16921967.2
申请日：2016-11-17
发明人： KAWASE, Junya , ANDO, Yoichi
IPC分类号： H05G1/08 , G02B6/44 , H05G1/06 , H05G1/34 , G02B6/00

3. 发明公开

EP3648551A1 PLASMA TREATMENT DEVICE 有权
公开(公告)号：EP3648551A1
公开(公告)日：2020-05-06
申请号：EP17916433.0
申请日：2017-06-27
申请人： Canon Anelva Corporation
发明人： INOUE, Tadashi , TANABE, Masaharu , SEKIYA, Kazunari , SASAMOTO, Hiroshi , SATO, Tatsunori , TSUCHIYA, Nobuaki
IPC分类号： H05H1/46 , C23C16/505
摘要： A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an impedance matching circuit, a first power supply connected to the balun via the impedance matching circuit, and configured to supply a high frequency to the first electrode via the impedance matching circuit and the balun, a low-pass filter, and a second power supply configured to supply a voltage to the first electrode via the low-pass filter.

4. 发明公开

EP3648550A1 PLASMA TREATMENT DEVICE 有权
公开(公告)号：EP3648550A1
公开(公告)日：2020-05-06
申请号：EP17915645.0
申请日：2017-06-27
申请人： Canon Anelva Corporation
发明人： INOUE, Tadashi , TANABE, Masaharu , SEKIYA, Kazunari , SASAMOTO, Hiroshi , SATO, Tatsunori , TSUCHIYA, Nobuaki
IPC分类号： H05H1/46 , C23C16/505
摘要： A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, and a second electrode electrically connected to the second balanced terminal. When Rp represents a resistance component between the first balanced terminal and the second balanced terminal when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, 1.5 ≤ X/Rp ≤ 5000 is satisfied.

5. 发明授权

EP1612857B1 CVD APPARATUS AND METHOD FOR CLEANING CVD APPARATUS 有权转让
公开(公告)号：EP1612857B1
公开(公告)日：2018-08-01
申请号：EP04720167.8
申请日：2004-03-12
申请人： Canon Anelva Corporation , Renesas Electronics Corporation
发明人： WANI, E. c/o CANAON ANELVA CORPORATION , SAKAI, K. c/o MATUSHITA ELECTRIC INDUSTRIAL CO., LTD , OKURA, S. c/o MITSUBISHI DENKI KABUSHIKI KAISHA , SAKAMURA, M. , ABE, K. c/o ULVAC , INC. , MURATA, H. c/o TOKYO ELECTRON LIMITED TBS Broadcast , KAMEDA, K. c/o HITACHI KOKUSAI ELECTRIC INC.
IPC分类号： H01L21/31 , C23C16/44
CPC分类号： H01J37/32862 , C23C16/4405 , H01J37/32082
摘要： There is provided a CVD apparatus capable of efficiently removing a by-product such as SiO 2 or Si 3 N 4 which is stuck and deposited onto the surface of an internal wall, an electrode or the like in a CVD chamber in a film forming process, and furthermore, executing cleaning having a small damage over an upper electrode and a counter electrode stage (a lower electrode) and manufacturing a thin filmof high quality, and a CVD apparatus cleaning method using the same. In a CVD apparatus cleaning method of introducing a cleaning gas to carry out plasma cleaning over an inside of a CVD chamber after forming a deposited film on a surface of a substrate, a frequency of an RF to be applied to an RF electrode is switched into a first frequency to be applied for forming a film and a second frequency to be applied when executing the plasma cleaning.

7. 发明授权

EP1612856B8 DEVICE FOR CLEANING CVD DEVICE AND METHOD OF CLEANING CVD DEVICE 有权转让
标题翻译：装置和方法用于清洁CVD系统
公开(公告)号：EP1612856B8
公开(公告)日：2012-02-08
申请号：EP04720142.1
申请日：2004-03-12
申请人： National Institute of Advanced Industrial Science and Technology , ULVAC, Inc. , Canon Anelva Corporation , SANYO Electric Co., Ltd. , Sony Corporation , Tokyo Electron Limited , Hitachi Kokusai Electric Inc. , Fujitsu Semiconductor Limited , Renesas Electronics Corporation
发明人： SAKAI, Katsuo, c/o Matsushita Electric Industrial Co. Ltd. , ABE, Kaoru , OKURA, Seiji , SAKAMURA, Masaji , MURATA, Hitoshi , KAMEDA, Kenji , WANI, Etsuo , SEKIYA, Akira, c/o Tsukuba Center National Inst.
IPC分类号： H01L21/31 , C23C16/44
CPC分类号： C23C16/52 , C23C16/4405
摘要： A method of cleaning a CVD device wherein, by-products sticking to the inner wall of a reaction chamber (12) is cleaned, and the cleaning can be finished on an accurate time. The light intensity of F radicals in a reaction chamber (12) is monitored by an emission spectrometer (40). After the light intensity reaches the saturation point of light intensity, cleaning is finished in a predetermined time. The concentration of SiF4 in the exhausted gas from the reaction chamber (12) is monitored by an infrared spectroscopy (50). When the SiF4 concentration reaches a predetermined cleaning end point, the cleaning is ended. In place of the emission spectrometer (40), a mass spectrograph (70) for measuring the F-intensity in the reaction chamber (12) can be installed.

8. 发明授权

EP1612856B1 DEVICE FOR CLEANING CVD DEVICE AND METHOD OF CLEANING CVD DEVICE 有权转让
标题翻译：装置和方法用于清洁CVD系统
公开(公告)号：EP1612856B1
公开(公告)日：2011-08-24
申请号：EP04720142.1
申请日：2004-03-12
申请人： RESEARCH INSTITUTE OF INNOVATIVE TECHNOLOGY FOR THE EARTH , National Institute of Advanced Industrial Science and Technology , ULVAC, Inc. , Canon Anelva Corporation , SANYO Electric Co., Ltd. , Sony Corporation , Tokyo Electron Limited , Hitachi Kokusai Electric Inc. , Fujitsu Semiconductor Limited , Renesas Electronics Corporation
发明人： SAKAI, Katsuo, c/o Matsushita Electric Industrial Co. Ltd. , ABE, Kaoru , OKURA, Seiji , SAKAMURA, Masaji , MURATA, Hitoshi , KAMEDA, Kenji , WANI, Etsuo , SEKIYA, Akira, c/o Tsukuba Center National Inst.
IPC分类号： H01L21/31 , C23C16/44
CPC分类号： C23C16/52 , C23C16/4405
摘要： A method of cleaning a CVD device wherein, by-products sticking to the inner wall of a reaction chamber (12) is cleaned, and the cleaning can be finished on an accurate time. The light intensity of F radicals in a reaction chamber (12) is monitored by an emission spectrometer (40). After the light intensity reaches the saturation point of light intensity, cleaning is finished in a predetermined time. The concentration of SiF4 in the exhausted gas from the reaction chamber (12) is monitored by an infrared spectroscopy (50). When the SiF4 concentration reaches a predetermined cleaning end point, the cleaning is ended. In place of the emission spectrometer (40), a mass spectrograph (70) for measuring the F-intensity in the reaction chamber (12) can be installed.

9. 发明公开

EP2166581A8 Magnetoresistance effect device and method of production of the same 审中-公开
标题翻译：磁阻效应器件及其制造方法
公开(公告)号：EP2166581A8
公开(公告)日：2010-08-11
申请号：EP10150310.0
申请日：2005-09-05
申请人： Canon Anelva Corporation , National Institute of Advanced Industrial Science and Technology
发明人： Djayaprawira, David D , Tsunekawa, Koji , Nagai, Motonobu , Maehara, Hiroki , Yamagata, Shinji , Watanabe, Naoki , Yuasa, Shinji
IPC分类号： H01L43/08 , H01L43/12 , C23C14/08 , C23C14/34 , G11C11/16 , H01F10/32 , H01F10/30
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , C23C14/081 , C23C14/34 , G11C11/16 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/307 , H01L43/08
摘要： A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a single crystal structure.
摘要翻译：一种磁阻效应器件，包括具有一对铁磁层和位于它们之间的阻挡层的多层结构，其中至少一个铁磁层至少使与阻挡层接触的部分形成为非晶的，并且阻挡层是具有单一的MgO层晶体结构。

10. 发明公开

EP2204469A1 MAGNETRON UNIT, MAGNETRON SPUTTERING APPARATUS AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 审中-公开
标题翻译： MAGNETRONEINHEIT，MAGNETRON-SPUTTERING-VORRCHTUNG UND VERFAHREN ZUR HERSTELLUNG EINER ELEKTRONISCHEN VORRICHTUNG
公开(公告)号：EP2204469A1
公开(公告)日：2010-07-07
申请号：EP08843409.7
申请日：2008-10-30
申请人： Canon Anelva Corporation
发明人： ENDO, Tetsuya , ABARRA, Einstein Noel
IPC分类号： C23C14/35 , H01L21/285
CPC分类号： C23C14/35 , C23C14/562 , H01J37/3408 , H01J37/3455
摘要： A magnetron unit includes a plurality of first magnet elements each including first magnets which have the same polarity and are provided on two end portions of a yoke plate made of a magnetic material and a second magnet which has a polarity different from that of the first magnets and is provided on a middle portion of the yoke plate, a base plate on which a moving unit is placed to make each of the plurality of first magnet elements move in one direction, and a second magnet element which includes yoke plates made of a magnetic material and fixed to two end portions, respectively, of the base plate, a magnet which has the same polarity as that of the second magnet and is placed on the yoke plate and a magnet which has the same polarity as that of the first magnet and is placed on the magnet.
摘要翻译：磁控管单元包括多个第一磁体元件，每个第一磁体元件包括具有相同极性的第一磁体并且设置在由磁性材料制成的磁轭板的两个端部上，第二磁体具有与第一磁体的极性不同的极性并且设置在轭板的中间部分，基板，放置移动单元以使多个第一磁体元件沿一个方向移动;第二磁体元件，其包括由磁性材料制成的磁轭板材料并分别固定在基板的两个端部，具有与第二磁体的极性相同的极性并放置在磁轭板上的磁体和具有与第一磁体相同极性的磁体，放在磁铁上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式