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    • 6. 发明公开
    • TRANSFER METHOD AND THERMAL NANOIMPRINT DEVICE
    • ÜBERTRAGUNGSVERFAHRENUND THERMISCHE NANOIMPRINT-VORRICHTUNG
    • EP2848391A1
    • 2015-03-18
    • EP13787905.2
    • 2013-04-30
    • Asahi Kasei E-Materials Corporation
    • HOSOMI, NaokiKOIKE, JunYAMAGUCHI, Fujito
    • B29C59/04B29C65/02H01L21/027B29L7/00
    • B29C59/022B29C59/026B29C59/046B29C59/16B29K2033/08B29K2105/0005G03F7/0002Y10T428/24628
    • A first mask layer (13) and a second mask layer (12) are transferred and imparted to a target object (20) using a fine-pattern-forming film (I) provided with a cover film (10) having a nanoscale concavo-convex structure (11) formed on one surface thereof, a second mask layer (12) provided in a recess of the concavo-convex structure (11), and a first mask layer (13) provided so as to cover the concavo-convex structure (11) and the second mask layer (12). A surface of a fine-pattern-forming film (II) to which the first mask layer (13) is provided is pressed toward a surface of the target object (20), energy rays are irradiated to the first mask layer (13), and the cover film (10) is then separated from the second mask layer (12) and the first mask layer (13). Pressing and energy ray irradiation are each performed independently. The target object is etched using the second mask layer (12) and the first mask layer (13).
    • 第一掩模层(13)和第二掩模层(12)使用设置有具有纳米级凹凸形状的覆盖膜(10)的精细图案形成膜(I)转印并施加到目标物体(20) 形成在其一个表面上的凸起结构(11),设置在凹凸结构(11)的凹部中的第二掩模层(12)和设置成覆盖凹凸结构的第一掩模层(13) (11)和第二掩模层(12)。 将设置有第一掩模层(13)的精细图案形成膜(II)的表面压向目标物体(20)的表面,对第一掩模层(13)照射能量射线, 然后将覆盖膜(10)与第二掩模层(12)和第一掩模层(13)分离。 各自独立进行按压和能量射线照射。 使用第二掩模层(12)和第一掩模层(13)蚀刻目标物体。
    • 7. 发明公开
    • OPTICAL SUBSTRATE, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR PRODUCING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    • 光学基板,半导体发光元件及其制造方法发光用半导体组件
    • EP2835836A1
    • 2015-02-11
    • EP13771897.9
    • 2013-03-29
    • ASAHI KASEI E-MATERIALS CORPORATION
    • KOIKE, JunMITAMURA, YoshimichiYAMAGUCHI, Fujito
    • H01L33/22H01L33/32
    • H01L33/58H01L21/0243H01L21/0254H01L21/02658H01L22/12H01L33/007H01L33/20H01L33/22H01L33/32
    • In an optical substrate (1), a concave-convex structure (12) including a plurality of independent convex portions (131 to 134) and concave portions (14) provided between the convex portions (131 to 134) is provided in a surface. The average interval Pave between the adjacent convex portions (131 to 134) in the concave-convex structure (12) satisfies 50 nm ≤ Pave ≤ 1500 nm, and the convex portion (133) having a convex portion height hn satisfying 0.6 h ≥ hn ≥ 0 h for the average convex portion height Have is present with a probability Z satisfying 1/10000 ≤ Z ≤ 1/5. When the optical substrate (1) is used in a semiconductor light-emitting element, dislocations in a semiconductor layer are dispersed to reduce the dislocation density, and thus internal quantum efficiency IQE is improved, and a waveguide mode is removed by light scattering and thus the light the extraction efficiency LEE is increased, with the result that the efficiency of light emission of the semiconductor light-emitting element is enhanced.
    • 在一个光导基片(1),凹凸结构(12)包括(131至134)的凸部之间设置独立的凸部的多个(131至134)和凹部(14)在一个表面上设置。 在凹凸结构的相邻的凸部(131〜134)之间的平均间隔铺路(12)SATIS外资企业50纳米‰¤铺路‰¤1500纳米,且所述凸部(133)具有满足0.6 h的凸部高度Hn ‰¥HN‰的平均凸部高度¥0 H有无存在与满足万分之一‰¤ž‰¤1.5的概率ž。 当光导基片(1)在一个半导体发光元件时,在半导体层中的位错被分散来降低位错密度,并且因此内部量子效率IQE得到改善,并且通过光散射,从而除去的波导模式 光提取效率的LEE增加,结果做了半导体发光元件的发光效率提高。