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    • 81. 发明公开
    • Device and method for estimating depth map, and method for generating intermediate image and method for encoding multi-view video using the same
    • 装置和方法,用于估计用于生成由此编码多视角视频的中间图像和方法的深度图和方法
    • EP2061005A3
    • 2010-02-17
    • EP08105766.3
    • 2008-11-11
    • Gwangju Institute of Science and Technology
    • Ho, YoSungLee, Sang BeomOh, Kwan Jung
    • G06T7/00
    • H04N19/61G06T7/187G06T7/55G06T2207/10012H04N19/597
    • The present invention relates to a device and a method for estimating a depth map, and a method for making an intermediate image and a method for encoding multi-view video using the same. More particularly, the present invention relates to a device and a method for estimating a depth map that are capable of acquiring a depth map that reduces errors and complexity , and is resistant to external influence by dividing an area into segments on the basis of similarity, acquiring a segment-unit initial depth map by using a three-dimensional warping method and a self adaptation function to which an extended gradient map is reflected, and refining the initial depth map by performing a belief propagation method by the segment unit, and achieving smoother view conversion and improved encoding efficiency by generating an intermediate image with the depth map and utilizing the intermediate image for encoding a multi-view video, and a method for generating the intermediate image and a method for encoding the multi-view video using the same.
    • 本发明涉及一种装置和用于估计深度图的方法,以及用于制造在中间图像的方法和用于编码使用相同的多视点视频的方法。 更具体地,本发明涉及一种装置和用于估计深度图那样的方法能够获得的深度图确实减少了错误和复杂性,并且对外部影响耐通过将在区域成段的相似性的基础上, 通过使用三维翘曲的方法和一种自适配功能到哪个扩展梯度图的被反射,并通过由段单元进行达传播方法精炼初始深度图,并且实现更平滑的获取段单元初始深度图 视图转换,并通过在与深度映射中间图像生成和利用所述中间图像进行编码的多视图视频编码的改善效率,和用于产生所述中间图像和用于编码使用相同的多视点视频的方法的方法。
    • 82. 发明公开
    • Resistance RAM having oxide layer and solid electrolyte layer, and method for operating the same
    • 与用于操作所述氧化物层和所述固体电解质层和方法相同的RAM的电阻式存储器的
    • EP2141753A2
    • 2010-01-06
    • EP09164520.0
    • 2009-07-03
    • Gwangju Institute of Science and Technology
    • Hwang, Hyun SangYoon, Jaesik
    • H01L45/00
    • H01L45/146H01L45/085H01L45/12H01L45/1233H01L45/142H01L45/143
    • A resistance RAM provided with an oxide layer and a solid electrolyte layer, and a method for operating the same are provided. The resistance RAM comprises a first electrode (11), an oxide layer (13) that is formed on the first electrode, a solid electrolyte layer (15) that is disposed on the oxide layer, and a second electrode (17) that is disposed on the solid electrolyte layer. The method comprises the step of forming a conductive tip (13a) in the oxide layer by applying a forming voltage between the electrodes of the resistance RAM, such that the oxide layer is electrically broken. A conductive filament (15a) is formed in the solid electrolyte layer by applying a positive voltage to the second electrode on the basis of the voltage that is applied to the first electrode. The conductive filament that is formed in the solid electrolyte layer is removed by applying a negative voltage to the second electrode on the basis of the voltage that is applied to the first electrode.
    • 设置在氧化物层和固体电解质层设置有电阻RAM,以及用于操作其的方法。 电阻RAM包括氧化层(13)上的第一电极(11)并形成在第一电极,固体电解质层(15)并设置在所述氧化物层上,和第二电极(17)并设置 在固体电解质层。 该方法包括通过将电阻RAM的成形电极之间的电压形成在氧化物层上的导电尖端(13A)的步骤中,检查做的氧化物层是电断开。 导电丝(15A)设置在所述固体电解质层由施加正电压到电压的基础上,在第二电极上形成没被施加到第一电极。 导电灯丝做在固体电解质层上形成通过将负电压施加到电压的基础上,所述第二电极取出并被施加到第一电极。
    • 84. 发明公开
    • Polariscopic phase microscope
    • Polariskopisches相差显微镜
    • EP2081070A3
    • 2009-07-29
    • EP09150365.6
    • 2009-01-12
    • Gwangju Institute of Science and Technology
    • Kim, Dug YoungLee, Ji Yong
    • G02B21/14G02B21/00
    • G02B21/0092G02B21/14
    • The present invention relates to a polariscopic phase microscope that can precisely observe a specimen, and more specifically, to a polariscopic phase microscope that can observe a structure and change of a physiological cell by using a phase contrast of light passing through components of the physiological cell. There is provided a polariscopic phase microscope according to the present invention comprising: an optical image generator that acquires images for a specimen to be observed; an object plane onto which light beams of the images acquired from the optical image generator are projected; a first transform lens that performs primary Fourier transformation on the light beams passing through the object plane; a λ/4 wavelength plate that is positioned to be spaced by a focal distance of the first transform lens from the first transform lens; a secondary transform lens that performs secondary Fourier transformation on the light beams passing through the λ/4 wavelength plate; and a phase image generator including a photo detector on which the images of the light beams subjected to the secondary Fourier transformation is focused.
      The present invention has an effect that can observe the structure and motion of the physiological cell by acquiring the quantitative phase information of the biological specimen such as the physiological cell.
    • 88. 发明公开
    • Zinc oxide semiconductor and method of manufacturing the same
    • Zinkoxidhalbleiter和Verfahren zu seiner Herstellung
    • EP2009683A2
    • 2008-12-31
    • EP08104509.8
    • 2008-06-23
    • Gwangju Institute of Science and Technology
    • Park, Sung JooOh, Min SukKwon, Min KiHwang, Dae Kyu
    • H01L21/36
    • H01L21/02667H01L21/0237H01L21/02554H01L21/02579
    • There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.
    • 提供了一种制造氧化锌半导体的方法和使用该方法制造的氧化锌半导体。 在具有n型半导体的电特性的氧化锌薄膜上形成金属催化剂层,并对其进行热处理,使得氧化锌薄膜被修饰为具有电特性的氧化锌薄膜 的p型半导体。 存在于氧化锌薄膜中的氢原子在热处理期间被金属催化剂除去。 因此,通过金属催化剂和热处理除去存在于氧化锌薄膜中的氢原子,并且用作载流子的空穴的浓度增加。 也就是说,将n型氧化锌薄膜改性为高浓度的p型氧化锌半导体。