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61. 发明授权

EP0767991B1 TOUCH SENSING DEVICES AND METHODS OF MAKING SUCH 失效
标题翻译：触摸传感器及其制造方法
公开(公告)号：EP0767991B1
公开(公告)日：2001-11-07
申请号：EP96903183.0
申请日：1996-03-11
申请人： Koninklijke Philips Electronics N.V.
发明人： YOUNG, Nigel, David
IPC分类号： H03K17/96
CPC分类号： G06F3/0414 , G06K9/0002 , H01H1/0036 , H01H13/702 , H01H13/703 , H01H2211/00 , H01H2229/016
摘要： A touch sensing device comprising a plurality of individually operable touch sensing elements (10) having first and second overlapping and spaced conductive layers (12,15) with the second conductive layer (15) being displaceable towards the first conductive layer (12) in response to a touch input, is fabricated by forming on a support (14) a thin film multi-layer structure comprising the first and second conductive layers with an insulating layer (16) therebetween and in which the second conductive layer (15) is provided with apertures (22) at predetermined regions, and subjecting the structure to an etching process through which insulating material between the conductive layers at the apertured regions isremoved via the apertures to form gaps (19) and leaving the second conductive layer (15) at each region supported in spaced relationship to the first conductive layer (12) by the insulating layer around the periphery of the region. The device may be used, for example, as a keypad or, with larger numbers of elements arranged in a row and column matrix, as a graphics tablet or display overlay and operated with a stylus. The device can conveniently be integrated with a liquid crystal display panel using a substrate of the panel as the support (14).

62. 发明公开

EP1143467A2 Microelectromechanical actuators including driven arched beams for mechanical advantage 有权
标题翻译：科罗拉多州立大学
公开(公告)号：EP1143467A2
公开(公告)日：2001-10-10
申请号：EP01302514.3
申请日：2001-03-19
申请人： Cronos Integrated Microsystems, Inc.
发明人： Hill, Edward Arthur , Dhuler, Viijayakumar Rudrappa , Cowen, Allen Bruce , Mahadevan, Ramaswamy , Wood, Robert L.
IPC分类号： H01H1/00
CPC分类号： H01H1/0036 , H01H61/02 , H01H2061/006
摘要： Microelectromechanical actuators include a substrate, spaced apart supports on the substrate and a thermal arched beam that extends between the spaced apart supports and that further arches upon heating thereof, for movement along the substrate. One or more driven arched beams are coupled to the thermal arched beam. The end portions of the driven arched beams move relative to one another to change the arching of the driven arched beams in response to the further arching of the thermal arched beam, for movement of the driven arched beams. A driven arched beam also includes an actuated element at an intermediate portion thereof between the end portions, wherein a respective actuated element is mechanically coupled to the associated driven arched beam for movement therewith, and is mechanically decoupled from the remaining driven arched beams for movement independent thereof. By allowing independent movement of the actuated elements, a variety of actuator applications may be provided wherein it is desired to actuate multiple elements in the same or different directions. For example, first and second driven arched beams may extend parallel to one another, such that the actuated elements that are mechanically coupled to the first and second driven arched beams move in a same direction by the further arching of the thermal arched beam. In other embodiments, the first and second arched beams arch away from each other, such that the actuated elements that are coupled to the first and second driven arched beams move in opposite directions by the further arching of the thermal arched beam. In yet other embodiments, the first and second driven arched beams arch toward one another, such that the actuated elements that are mechanically coupled to the first and second driven arched beams move in opposite directions by the further arching of the thermal arched beam.
摘要翻译：微机电致动器包括衬底，衬底上的间隔开的支撑件和在间隔开的支撑件之间延伸的热拱形梁，并且在其加热时进一步拱形地沿着衬底运动。一个或多个被驱动的弓形梁联接到热拱形梁。被驱动的拱形梁的端部相对于彼此移动，以响应于热拱形梁的进一步拱形来改变被驱动的弓形梁的拱形，以便被驱动的拱形梁的运动。被驱动的弓形梁还包括在其端部之间的中间部分处的致动元件，其中相应的致动元件机械地联接到相关联的被驱动的弓形梁以与其一起运动，并且与剩余的被驱动的弓形梁机械地分离以便独立运动它们。通过允许致动元件的独立移动，可以提供各种致动器应用，其中期望在相同或不同方向上致动多个元件。例如，第一和第二被驱动的弓形梁可以彼此平行地延伸，使得机械地联接到第一和第二被驱动的弓形梁的致动元件通过热拱形梁的进一步拱曲在相同的方向上移动。在其他实施例中，第一和第二拱形梁彼此远离，使得联接到第一和第二被驱动的弓形梁的致动元件通过热拱形梁的进一步拱起在相反的方向上移动。在另外的实施例中，第一和第二被驱动的弓形梁彼此拱起，使得机械地联接到第一和第二被驱动的弓形梁的致动元件通过热拱形梁的进一步拱起在相反的方向上移动。

63. 发明公开

EP1119866A1 NEUE ELEKTRISCHE MIKROMECHANISCHER SCHALTEINRICHTUNG 有权
标题翻译：新的电动微机械开关电器
公开(公告)号：EP1119866A1
公开(公告)日：2001-08-01
申请号：EP99944219.7
申请日：1999-09-29
申请人： ABB RESEARCH LTD.
发明人： STRUEMPLER, Ralf
IPC分类号： H01H1/00
CPC分类号： H01H1/0036 , H01H9/40 , H01H50/005 , H01H2071/008 , H02H3/08
摘要： The invention relates to a new electrical switchgear which consists of a functional unit (1) having microrelay cells (3) which are connected in series and in parallel.

64. 发明公开

EP1040492A1 MICROSYSTEME A ELEMENT DEFORMABLE SOUS L'EFFET D'UN ACTIONNEUR THERMIQUE 有权
标题翻译：可变形元暴露热工自动化的微观结构
公开(公告)号：EP1040492A1
公开(公告)日：2000-10-04
申请号：EP98959979.0
申请日：1998-12-14
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE
发明人： FOUILLET, Yves
IPC分类号： H01H1/00
CPC分类号： H01H1/0036 , B81B3/0024 , B81B2201/016 , B81B2201/032 , H01G5/16 , H01H2001/0042 , H01H2037/008 , Y10T29/42 , Y10T29/49105 , Y10T29/49117 , Y10T29/49124 , Y10T29/49128 , Y10T29/49155
摘要： The invention concerns a microsystem, in particular for producing microswitches or microvalves, constituted on a substrate (50) and used for producing a shift between a first operating state and a second operating state by means of a heat actuated device with bi-metal switch effect. The heat-actuated device comprises a deformable element (51) connected, by opposite ends, to the substrate (50) so as to present naturally a deflection without stress relative to the substrate surface which faces it, said natural deflection determining the first operating state, the second operating state being produced by the heat-actuated device which induces, by the effect of temperature variation, a deformation of the deformable element (51) tending to reduce its deflection and submitting it to a compressive stress by buckling effect in a direction opposite to its natural deflection.

65. 发明公开

EP1029218A1 MICROELECTROMECHANICAL POSITIONING APPARATUS 审中-公开
标题翻译：微机电定位装置
公开(公告)号：EP1029218A1
公开(公告)日：2000-08-23
申请号：EP98957608.7
申请日：1998-11-05
申请人： MCNC
发明人： DHULER, Vijayakumar, R. , WOOD, Robert, L.
IPC分类号： G01B7/004 , G01B7/34 , G01N27/00 , B25J7/00
CPC分类号： F03G7/06 , B81B3/0024 , B81B2201/032 , B81B2201/054 , B81B2203/0109 , B81B2203/051 , G02B6/3803 , G02B6/4226 , H01H1/0036 , H01H9/14 , H01H61/00 , H01H2001/0042 , H01H2001/0068 , H01H2061/006
摘要： A microelectromechanical (MEMS) positioning apparatus is provided that can precisely microposition an object in each of the X, Y and Z directions. The MEMS positioning apparatus includes a reference surface, a support disposed in a fixed position to the reference surface, and a stage defining a XY plane that is suspended adjacent to the support and over at least a portion of the reference surface. The MEMS positioning apparatus also includes at least one and, more typically, several actuators for precisely positioning the stage and, in turn, objects carried by the stage. For example, the MEMS positioning apparatus can include first and second MEMS actuators for moving the stage in the XY plane upon actuation. In addition, the MEMS positioning apparatus can include a Z actuator, such as a thermal bimorph structure, for moving the stage in the Z direction.

66. 发明公开

EP1023765A1 METHOD AND APPARATUS FOR REDUCING POWER LOSS IN POWER CONVERSION CIRCUITRY 有权
标题翻译：方法和装置减少了功率转换器电路线损
公开(公告)号：EP1023765A1
公开(公告)日：2000-08-02
申请号：EP98952287.5
申请日：1998-10-13
申请人： Reliance Electric Industrial Company
发明人： POND, Robert, J.
IPC分类号： H02M1/00
CPC分类号： H02M1/00 , H01H1/0036 , H01H9/542 , H02M7/32 , H02M7/58 , H03K17/08142 , H03K2217/0036
摘要： A power application circuit (10) utilizes microelectromechanical (MEM) switches (18) to reduce power loss in energy conversion equipment. The MEM switches (18) can be integrated on a single substrate with a diode or semiconductor switch. The MEM switches (18) can be included in a single circuit package with another semiconductor device and may include a control circuit (12) which turns each MEM switch on or off. The MEM switch (18) is controlled so that it is opened and closed only when a relatively low voltage drop occurs across the switch. The MEM switch (18) can be utilized in AC to AC converters, DC to AC converters, AC to DC converters, matrix converters, motor controllers, resonant motor controllers, or other power application devices. The MEM switch (18) can also be included in a single package with an IGBT which is optimized for low-switching losses. It can be included in a single package with a diode to reduce conduction loss in power diode bridges.

67. 发明公开

EP1001440A2 Switching structure and method of fabrication 有权
标题翻译： Schalterstruktur和Herstellverfahren
公开(公告)号：EP1001440A2
公开(公告)日：2000-05-17
申请号：EP99309020.8
申请日：1999-11-12
申请人： GENERAL ELECTRIC COMPANY
发明人： Kornrumpf, William Paul , Wojnarowski, Robert John
IPC分类号： H01H1/00 , H01H59/00
CPC分类号： H01H1/0036 , H01H61/0107 , H01H2001/0042 , H01H2001/0073 , H01H2001/0084 , H01H2061/006 , Y10T29/49105 , Y10T29/49128 , Y10T29/49155
摘要： A switch structure having a base surface; a first high density interconnect (HDI) plastic interconnect layer overlying the base surface layer; a cavity within the HDI plastic interconnect layer; at least one patterned shape memory alloy (SMA) layer overlying the HDI plastic interconnect layer and the cavity, and at least one patterned conductive layer over the at least one patterned SMA layer; a fixed contact pad within the cavity and attached to the base surface and a movable contact pad attached to a portion of the first patterned SMA layer within the cavity such that when the first and second patterned SMA layers and the first and second patterned metallized layers are in a first stable position, the movable contact pad touches the fixed contact pad, thereby providing an electrical connection and forming a closed switch. The structure has a second stable position in which the SMA and metallized layers are flexed away from the cavity so that the contact pads are not in contact and form an open switch.
摘要翻译：具有基面的开关结构; 覆盖基底表面层的第一高密度互连（HDI）塑料互连层; HDI塑料互连层内的空腔; 覆盖在HDI塑料互连层和空腔上的至少一个图案形状记忆合金（SMA）层，以及至少一个图案化的SMA层上的至少一个图案化导电层; 空腔内的固定接触焊盘并附接到基体表面，以及可移动接触垫，其附接到空腔内的第一图案化SMA层的一部分，使得当第一和第二图案化SMA层和第一和第二图案化金属化层为在第一稳定位置，可动接触垫接触固定接触垫，从而提供电连接并形成闭合的开关。该结构具有第二稳定位置，其中SMA和金属化层从空腔弯曲，使得接触垫不接触并形成开放的开关。

68. 发明授权

EP0679878B1 Mikrosystem mit integrierter Schaltung und mikromechanischem Bauteil und Herstellverfahren 失效
标题翻译：微具有集成电路和微机械部件和制造工艺
公开(公告)号：EP0679878B1
公开(公告)日：1999-08-25
申请号：EP95106099.5
申请日：1995-04-24
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Zettler, Thomas, Dr.
IPC分类号： G01L1/14 , G01P15/125 , H02N1/00 , H01H1/00
CPC分类号： B81C1/00246 , B81C2203/0735 , G01L1/148 , G01P15/0802 , H01H1/0036 , H02N1/002

69. 发明公开

EP0892444A2 Semiconductor device comprising an aggregate of semiconductor micro-needles 失效
标题翻译：半导体器件包括半导体微针集合体
公开(公告)号：EP0892444A2
公开(公告)日：1999-01-20
申请号：EP98119142.2
申请日：1994-11-02
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD
发明人： Eriguchi, Kofi , Kubota, Masafumi , Niwa, Masaaki , Nomura, Noboru
IPC分类号： H01L33/00 , H01L21/30 , H01L27/15
CPC分类号： H01L31/1804 , B82Y10/00 , G02B6/1245 , G02B2006/12102 , G02B2006/12173 , G02B2006/12176 , G11C23/00 , H01H1/0036 , H01L21/3086 , H01L31/0352 , H01L33/10 , H01L33/18 , Y02E10/547 , Y02P70/521 , Y10S438/947 , Y10S438/962 , Y10S438/964
摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter. are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).
摘要翻译：在硅衬底上形成二氧化硅膜，然后形成由硅制成的半球形晶粒，每个晶粒都具有极小的直径。通过LPCVD沉积在其上。在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。所得到的第二虚线掩模用于将硅衬底从其表面蚀刻到特定深度，从而形成半导体微针集合体。由于每个半导体微针的直径足够小以引起量子尺寸效应以及仅具有小尺寸变化，因此可以获得显着的量子尺寸效应。因此，通过使用半导体微针集合体（量子化区域），可以构成具有高信息处理功能的半导体装置。

70. 发明公开

EP0887867A2 Semiconductor device comprising an aggregate of semiconductor micro-needles 失效
标题翻译：半导体器件包括半导体微针集合体
公开(公告)号：EP0887867A2
公开(公告)日：1998-12-30
申请号：EP98119141.4
申请日：1994-11-02
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD
发明人： Eriguchi, Kofi , Kubota, Masafumi , Niwa, Masaaki , Nomura, Noboru
IPC分类号： H01L33/00 , H01L21/30 , H01L27/15
CPC分类号： H01L31/1804 , B82Y10/00 , G02B6/1245 , G02B2006/12102 , G02B2006/12173 , G02B2006/12176 , G11C23/00 , H01H1/0036 , H01L21/3086 , H01L31/0352 , H01L33/10 , H01L33/18 , Y02E10/547 , Y02P70/521 , Y10S438/947 , Y10S438/962 , Y10S438/964
摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).
摘要翻译：在硅衬底上形成二氧化硅膜，然后通过LPCVD在其上沉积各自具有极小直径的由硅制成的半球形晶粒。在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。所得到的第二虚线掩模用于将硅衬底从其表面蚀刻到特定深度，从而形成半导体微针集合体。由于每个半导体微针的直径足够小以引起量子尺寸效应以及仅具有小尺寸变化，因此可以获得显着的量子尺寸效应。因此，通过使用半导体微针集合体（量子化区域），可以构成具有高信息处理功能的半导体装置。

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