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61. 发明公开

EP1593649A2 Method of making electrical connections to hermetically sealed MEMS devices 有权
标题翻译： Verfahren zur elektrischen Verbindung mit hermetisch versiegelten MEMS-Bauelementen
公开(公告)号：EP1593649A2
公开(公告)日：2005-11-09
申请号：EP05103778.6
申请日：2005-05-05
申请人： Dalsa Semiconductor Inc.
发明人： Ouellet, Luc
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/007 , B81B2207/092
摘要： In the manufacture of a MEMS device having a semiconductor-on-insulator substrate with a first portion closed by a lid to provide a hermetically sealed region and an second portion external to said hermetically sealed region, a method of providing electrical connections to said hermetically sealed region comprising forming at least one continuous deep trench in said semiconductor and extending down to said insulator, said at least one deep trench surrounding and isolating at least one block of semiconductor within said substrate, and said at least one block of semiconductor extending form within said first region to said second region; depositing an insulating layer in said trenches and over the surface of said substrate; depositing a metal ring around said first region; sealing said lid to said metal ring; and attaching a contact to said at least one block of semiconductor in said second region to provide one or more electrical connections through said at least one block of semiconductor to one or more components of said MEMS device within said hermetically sealed ring.
摘要翻译：在制造具有绝缘体上半导体衬底的MEMS器件中，第一部分由盖子封闭以提供气密密封区域和在所述密封区域外部的第二部分，提供与所述气密密封的电连接的方法区域，包括在所述半导体中形成至少一个连续的深沟槽并向下延伸到所述绝缘体，所述至少一个深沟槽围绕并隔离所述衬底内的至少一个半导体块，并且所述至少一个半导体延伸形式的块在所述第一区到第二区; 在所述沟槽中和所述衬底的表面上沉积绝缘层; 在所述第一区域周围沉积金属环; 将所述盖密封到所述金属环上; 以及将接触件附接到所述第二区域中的所述至少一个半导体块，以提供通过所述至少一个半导体块到所述密封环内的所述MEMS器件的一个或多个部件的一个或多个电连接。

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