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51. 发明授权

EP3220493B1 SURFACE-EMITTING LASER ARRAY AND LASER DEVICE 有权
公开(公告)号：EP3220493B1
公开(公告)日：2019-11-20
申请号：EP17158203.4
申请日：2017-02-27
申请人： Ricoh Company, Ltd.
发明人： HANAOKA, Katsunari
IPC分类号： H01S5/02 , H01S5/183 , H01S5/42 , H01S5/187 , H01S5/00 , H01S5/18 , H01S5/40

52. 发明授权

EP2966737B1 TWO-DIMENSIONAL PHOTONIC CRYSTAL SURFACE-EMITTING LASER 有权
公开(公告)号：EP2966737B1
公开(公告)日：2019-05-01
申请号：EP14760954.9
申请日：2014-02-25
申请人： Japan Science and Technology Agency
发明人： NODA, Susumu , OKINO, Tsuyoshi , KITAMURA, Kyoko , TANAKA, Yoshinori , LIANG, Yong
IPC分类号： H01S5/18 , H01S5/12 , H01S5/042 , H01S5/10 , H01S5/20

53. 发明授权

EP3184991B1 OPTICAL SENSOR 有权
公开(公告)号：EP3184991B1
公开(公告)日：2019-04-10
申请号：EP16203002.7
申请日：2016-12-08
申请人： Ricoh Company, Ltd.
发明人： ISHII, Toshihiro , TAKAHASHI, Yoichiro , CHUBACHI, Sunao , FUJIWARA, Masayuki , SASAKI, Toshihide , ADACHI, Kazuhiko
IPC分类号： G01N21/359 , A61B5/00 , A61B5/026 , A61B5/1455 , G01J1/04 , G01N21/47 , G01N21/49 , H01S5/18 , H01S5/183 , H01S5/026 , H01S5/227 , G01J1/02 , A61B5/16 , H01L31/103 , H01L31/0232 , A61B5/055 , H01L31/167 , H01L31/0224 , H01S5/022 , H01S5/42

54. 发明公开

EP3220493A3 SURFACE-EMITTING LASER ARRAY AND LASER DEVICE 有权
标题翻译：表面发射激光阵列和激光装置
公开(公告)号：EP3220493A3
公开(公告)日：2017-10-18
申请号：EP17158203.4
申请日：2017-02-27
申请人： Ricoh Company, Ltd.
发明人： HANAOKA, Katsunari
IPC分类号： H01S5/02 , H01S5/183 , H01S5/42 , H01S5/00 , H01S5/18 , H01S5/40
摘要： A surface-emitting laser array (10, 10A, 10B, 10C) and a laser device (300) including the surface-emitting laser array (10, 10A, 10B, 10C). The surface-emitting laser array (10, 10A, 10B, 10C) includes a layered product including a lower reflecting mirror (102) having two layers with different refractive indexes, an upper reflecting mirror (106), and an active layer (104) disposed between the lower reflecting mirror (102) and the upper reflecting mirror (106), a first separation trench (11) from which the upper reflecting mirror (106), the active layer (104), and the lower reflecting mirror (102) are removed, the first separation trench (11) separating the surface-emitting laser array (10, 10A, 10B, 10C) from an adjacent chip (10, 10A, 10B, 10C), and a second separation trench (13) disposed between the first separation trench (11) and a light-emitting unit (1) that emits a laser beam, the second separation trench (13) having a prescribed depth.
摘要翻译：一种表面发射激光器阵列（10,10A，10B，10C）和包括该表面发射激光器阵列（10,10A，10B，10C）的激光器装置（300）。表面发射激光器阵列（10,10A，10B，10C）包括层叠产品，该层叠产品包括具有不同折射率的两层的下反射镜（102），上反射镜（106）和有源层（104）配置在下部反射镜102与上部反射镜106之间的上部反射镜106，活性层104以及下部反射镜102的第一分离槽11，，将表面发射激光器阵列（10,10A，10B，10C）与相邻芯片（10,10A，10B，10C）分开的第一分离槽（11）和设置在第一分离槽第一分离槽（11）和发射激光束的发光单元（1），第二分离槽（13）具有预定的深度。

55. 发明公开

EP3184991A1 OPTICAL SENSOR, OPTICAL EXAMINATION DEVICE, AND OPTICAL PROPERTY DETECTION METHOD 有权
标题翻译：光学传感器，光学检测装置和光学特性检测方法
公开(公告)号：EP3184991A1
公开(公告)日：2017-06-28
申请号：EP16203002.7
申请日：2016-12-08
申请人： Ricoh Company, Ltd.
发明人： ISHII, Toshihiro , TAKAHASHI, Yoichiro , CHUBACHI, Sunao , FUJIWARA, Masayuki , SASAKI, Toshihide , ADACHI, Kazuhiko
IPC分类号： G01N21/359 , A61B5/00 , A61B5/026 , A61B5/1455 , G01J1/04 , G01N21/47 , G01N21/49 , H01S5/18 , H01S5/183 , H01S5/026 , H01S5/227
CPC分类号： H01S5/0262 , A61B5/0042 , A61B5/0073 , A61B5/0261 , A61B5/055 , A61B5/1455 , A61B5/165 , A61B5/4887 , A61B2505/09 , A61B2562/0233 , A61B2562/146 , A61B2562/16 , G01J1/0209 , G01J1/0411 , G01N21/359 , G01N21/4785 , G01N21/4795 , G01N21/49 , G01N2201/0612 , H01L31/022408 , H01L31/02327 , H01L31/103 , H01L31/167 , H01S5/02208 , H01S5/02288 , H01S5/0264 , H01S5/18347 , H01S5/18358 , H01S5/423
摘要： An optical sensor (10), an optical examination device (100), and a method of detecting optical properties. The optical sensor (10) includes an irradiation system including at least one light irradiator (LM) to irradiate a test object with light, and a detection system configured to detect the light that is emitted from the irradiation system to the test object and has propagated through the test object. The light irradiator (LM) includes a multilayered structure having an active layer, and the multilayered structure includes at least one surface-emitting laser element and a photo-sensing element optically connected to the at least one surface-emitting laser element. The optical examination device (100) includes the optical sensor (10), and a controller (1001) configured to calculate optical properties of the test object based on a detection result of the optical sensor (10). The method of detecting optical properties includes performing optical simulation to obtain a detection light quantity distribution for an optical model that simulates a test object and performing inverse problem estimation using a result of the optical simulation.
摘要翻译：一种光学传感器（10），光学检查装置（100）以及检测光学性质的方法。光学传感器（10）包括照射系统和检测系统，所述照射系统包括用于向被检体照射光的至少一个光照射器（LM），检测系统用于检测从照射系统发射到被检体并且已经传播的光通过测试对象。光照射器（LM）包括具有有源层的多层结构，并且该多层结构包括至少一个表面发射激光器元件和与该至少一个表面发射激光器元件光学连接的光敏元件。光学检查装置（100）包括光学传感器（10）以及控制器（1001），其被配置为基于光学传感器（10）的检测结果来计算测试对象的光学性质。检测光学性质的方法包括执行光学模拟以获得用于模拟测试对象的光学模型的检测光量分布，并且使用光学模拟的结果执行逆问题估计。

56. 发明公开

EP3113304A4 THERMAL-RADIATION LIGHT SOURCE AND TWO-DIMENSIONAL PHOTONIC CRYSTAL USED THEREIN 有权
标题翻译：德国维多利亚州威尔士革命者光子学家克里斯托尔（WISRMESTRAHLUNGSLICHTQUELLE UND DARIN VERWENDETER ZWEIDIMENSIONALER PHOTONISCHER KRISTALL
公开(公告)号：EP3113304A4
公开(公告)日：2017-03-15
申请号：EP15754718
申请日：2015-02-24
申请人： JAPAN SCIENCE & TECH AGENCY
发明人： NODA SUSUMU , INOUE TAKUYA , ASANO TAKASHI , DE ZOYSA MENAKA
IPC分类号： H01S5/04 , H01S5/00 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/10 , H01S5/12 , H01S5/18 , H01S5/30 , H01S5/34
CPC分类号： H01S5/18319 , H01S5/0014 , H01S5/0207 , H01S5/02453 , H01S5/02461 , H01S5/0421 , H01S5/0422 , H01S5/0425 , H01S5/0428 , H01S5/105 , H01S5/18316 , H01S5/3086 , H01S5/309 , H01S5/3402 , H01S5/3419 , H01S2302/02
摘要： The present invention provides a thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source 10 includes: a two-dimensional photonic crystal 12 including a slab 11 in which an n-layer 112 made of an n-type semiconductor, a quantum well structure layer 114 having a quantum well structure, and a p-layer 111 made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes 121) whose refractive index differs from the refractive indices of the n-layer 112, the p-layer 111 and the quantum well structure layer 114 are cyclically arranged in the slab 11 so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer 114; and a p-type electrode 131 and an n-type electrode 132 for applying, to the slab 11, a voltage which is negative on the side of the p-layer 111 and positive on the side of the n-layer 112.
摘要翻译：本发明提供一种与光电转换元件类似的能够以高响应速度切换光强度的热发射源。热发射源10包括：二维光子晶体12，其包括其中由n型半导体制成的n层112，具有量子阱结构的量子阱结构层114和p层在厚度方向上按顺序堆叠由p型半导体制成的111，其中折射率不同于n层112，p层111和p层111的折射率的改性折射率区域（空气孔121）量子阱结构层114循环地布置在板坯11中，以便与量子阱结构层114中的量子阱中的子带之间的转变能相对应的特定波长的光共振; 以及p型电极131和n型电极132，用于向板坯11施加在p层111侧为正的电压，在n层112的一侧为正。

57. 发明公开

EP2188875A4 MULTIPLE CAVITY ETCHED-FACET DFB LASERS 有权转让
标题翻译： DFB-LASER MIT MEHRERENKAVITÄTENUNDGEÄTZTENFACETTEN
公开(公告)号：EP2188875A4
公开(公告)日：2014-07-30
申请号：EP08830477
申请日：2008-09-11
申请人： BINOPTICS CORP
发明人： BEHFAR ALEX A , KWONG NORMAN S , GREEN MALCOLM , STAGARESCU CRISTIAN
IPC分类号： H01S5/12 , H01S5/028 , H01S5/10 , H01S5/18 , H01S5/40
CPC分类号： H01S5/12 , H01S5/028 , H01S5/1021 , H01S5/1039 , H01S5/18 , H01S5/4025
摘要： A semiconductor chip has at least two DFB etched facet laser cavities with one set of facets with AR coatings and a second set of etched facets with HR coatings that have a different relative position with respect to the gratings. This creates a difference in the phase between each of the etched facets and the gratings which changes the operational characteristics of the two laser cavities such that at least one of the lasers provides acceptable performance. As a result, the two cavity arrangement greatly improves the yield of the fabricated chips.
摘要翻译：半导体芯片具有至少两个具有AR涂层的DFB蚀刻小面激光腔，其具有一组具有AR涂层的刻面，以及具有HR涂层的第二组蚀刻刻面，其具有相对于光栅的不同相对位置。这产生了每个蚀刻面和光栅之间的相位的差异，其改变了两个激光腔的操作特性，使得至少一个激光器提供可接受的性能。结果，两个腔体结构大大提高了所制造的芯片的产量。

58. 发明公开

EP2619861A1 TWO-DIMENSIONAL PHOTONIC CRYSTAL SURFACE EMITTING LASER 审中-公开
标题翻译： WITH SURFACE光子晶体的二维发光激光
公开(公告)号：EP2619861A1
公开(公告)日：2013-07-31
申请号：EP11825298.0
申请日：2011-09-14
申请人： Canon Kabushiki Kaisha
发明人： NAGATOMO, Yasuhiro , KAWASHIMA, Shoichi
IPC分类号： H01S5/18
CPC分类号： H01S5/105 , B82Y20/00 , H01S5/18 , H01S5/187 , H01S5/2009 , H01S5/34 , H01S5/34333 , H01S2301/185
摘要： Provided is a two-dimensional photonic crystal surface emitting laser that enables easy laser oscillation with two-dimensionally symmetric intensity distribution, using a photonic crystal of a lattice structure having different lengths of primitive translation vectors in plane, realized in a two-dimensional photonic crystal surface emitting laser including an active layer, and a two-dimensional photonic crystal having a two-dimensionally periodic refractive index profile disposed in a vicinity of the active layer. The two-dimensional photonic crystal has a lattice structure where two primitive translation vectors in plane have different lengths, a shape of a member forming lattice points included in a unit cell of the lattice structure has anisotropy with respect to directions of the two primitive translation vectors, and the anisotropy of the shape of the member permits a difference of a coupling coefficient to be smaller than a case where the shape of the member is isotropic.

59. 发明公开

EP1998420A4 2-DIMENSIONAL PHOTONIC CRYSTAL SURFACE EMITTING LASER LIGHT SOURCE 审中-公开
标题翻译：与晶体表面二维光子发射激光源
公开(公告)号：EP1998420A4
公开(公告)日：2011-05-11
申请号：EP07736925
申请日：2007-03-20
申请人： UNIV KYOTO , ROHM CO LTD
发明人： SAKAI KYOSUKE , MIYAI EIJI , NODA SUSUMU , OHNISHI DAI , KUNISHI WATARU
IPC分类号： H01S5/18 , H01S5/10 , H01S5/125
CPC分类号： H01S5/18 , B82Y20/00 , G11B7/127 , H01S5/0425 , H01S5/105 , H01S5/125 , H01S5/2027 , H01S5/34313 , H01S2301/14 , H01S2301/18

60. 发明公开

EP1923972A4 INJECTION LASER 审中-公开
标题翻译：注入式激光器
公开(公告)号：EP1923972A4
公开(公告)日：2011-03-30
申请号：EP06769576
申请日：2006-07-07
申请人： GEN NANO OPTICS LTD
发明人： SHVEYKIN VASILY IVANOVICH
IPC分类号： H01S5/18 , H01S5/10
CPC分类号： H01S5/18 , H01S5/1032 , H01S5/1039 , H01S5/187 , H01S5/2211 , H01S5/42

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