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51. 发明公开

EP1855159A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME 审中-公开
标题翻译：组成为抗拒的下层膜和制造工艺及其
公开(公告)号：EP1855159A1
公开(公告)日：2007-11-14
申请号：EP06714631.6
申请日：2006-02-24
申请人： JSR Corporation
发明人： KONNO, Keiji , TANAKA, Masato , ISHII, Momoko , TAKAHASHI, Junichi , NAGAI, Tomoki
IPC分类号： G03F7/11 , H01L21/027
CPC分类号： G03F7/0752 , G03F7/0751 , G03F7/11 , H01L21/0274 , H01L21/0332 , Y10S430/106 , Y10S430/115 , Y10T428/31515 , Y10T428/31612 , Y10T428/31663
摘要： A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A),

R 1 b R 2 c Si(OR 3 ) 4-a (A)

wherein R 1 is a monovalent organic group having at least one unsaturated bond, R 2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R 3 individually represents a monovalent organic group, R 1 is a group other than OR 3 , a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.
摘要翻译：一种用于抗蚀剂下层组合物，被膜上设置。该组合物具有优异的储存稳定性，并能形成一个抗蚀剂图案的抗蚀剂下层膜具有优异的粘附性的抗蚀剂电影，可提高再现性和在去除抗蚀剂过程中发展和氧灰化使用的碱性液体抗性。该组合物包括水解产物和/或下式的硅烷化合物的缩合物（A），€€ƒƒƒ€€€ƒƒƒ€€€ƒƒR1 B r的2 C的Si（OR 3）4- 一个€ƒ€ƒ€ƒ€ƒ€ƒ（A）worin R 1为具有至少一个不饱和键，R 2独立darstellt氢原子，卤素原子或一价有机基团，R为单价有机基团3独立darstellt 一价有机基团，R 1不是OR 3以外的基团，a为1〜3的整数，b为1〜3的整数，c是0〜2的整数，条件做了= b + C ，

52. 发明公开

EP1837706A1 Resist composition, method for forming resist pattern, and semiconductor device and method for manufacturing the same 审中-公开
标题翻译：抗蚀剂组合物，形成抗蚀剂图案，半导体器件及其制造方法的方法
公开(公告)号：EP1837706A1
公开(公告)日：2007-09-26
申请号：EP06013346.9
申请日：2006-06-28
申请人： FUJITSU LIMITED
发明人： Nozaki, Koji c/o Fujitsu Limited , Kozawa, Miwa c/o Fujitsu Limited
IPC分类号： G03F7/40 , H01L21/027
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/0338 , H01L21/31144 , H01L21/32139 , Y10S430/106 , Y10S430/114
摘要： The present invention provides a resist composition which enables uniformly thickening a resist pattern with a resist pattern thickening material, regardless of the direction, spacing variations of the resist pattern, and the components of the resist pattern thickening material and enables forming a fine space pattern of resist, exceeding exposure limits of light sources of exposure devices at low cost, easily, and efficiently. The resist composition contains an alicyclic compound (melting point: 90°C to 150°C), and a resin. The method for manufacturing a semiconductor device includes forming a resist pattern on a surface of a workpiece to be processed by using a resist composition and applying a resist pattern thickening material on the surface of the workpiece so as to cover the surface of the resist pattern to thicken the resist pattern; and patterning the surface of the workpiece by etching thereof using the thickened resist pattern as a mask.
摘要翻译：本发明提供一种抗蚀剂组合物使一致增厚的抗蚀剂用的抗蚀剂图案增厚材料图案，不管方向如何，间隔抗蚀剂图案的变型中，与抗蚀剂图案增厚材料的成分和能形成的精细的空间图案抗蚀剂，超出曝光设备的光源的曝光极限以低成本，容易地和有效地。该抗蚀剂组合物包含脂环化合物（熔点：90℃至150℃），和树脂。用于制造半导体器件的方法包括形成一个工件的表面上形成抗蚀剂图案，通过使用抗蚀剂组合物和涂覆抗蚀剂图案增厚材料的工件的表面上进行加工，以覆盖抗蚀剂图案的所述表面增厚抗蚀剂图案; 和通过蚀刻其使用增厚的抗蚀剂图案作为掩模图案化所述工件的表面上。

53. 发明授权

EP1640173B1 Planographic printing plate precursor 有权
标题翻译：平版印刷版原版。
公开(公告)号：EP1640173B1
公开(公告)日：2007-09-05
申请号：EP05020922.0
申请日：2005-09-26
申请人： FUJIFILM Corporation
发明人： Nagashima, Akira
IPC分类号： B41M5/36 , B41C1/10
CPC分类号： B41C1/1008 , B41C1/1016 , B41C2201/04 , B41C2201/12 , B41C2201/14 , B41C2210/02 , B41C2210/06 , B41C2210/22 , B41C2210/24 , Y10S430/106 , Y10S430/108 , Y10S430/128 , Y10S430/145

54. 发明公开

EP1811338A2 Pattern forming method 审中-公开
标题翻译： Strukturbildungsverfahren
公开(公告)号：EP1811338A2
公开(公告)日：2007-07-25
申请号：EP07001324.8
申请日：2007-01-22
申请人： Fujifilm Corporation
发明人： Kanna, Shinichi , Inabe, Haruki , Kanda, Hiromi
IPC分类号： G03F7/004 , G03F7/039 , G03F7/075 , G03F7/20
CPC分类号： G03F7/0758 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/111
摘要： A pattern forming method which uses a positive resist composition comprises: (A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a silicon-containing resin having at least one group selected from the group of consisting (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating, (ii) a step of exposing the resist coating to light via an immersion liquid, (iii) a step of removing the immersion liquid remaining on the resist coating, (iv) a step of heating the resist coating, and (v) a step of developing the resist coating.
摘要翻译：使用正型抗蚀剂组合物的图案形成方法包括：（A）能够在酸的作用下增加其在碱性显影剂中的溶解度的无硅树脂; （B）能够在用光化射线或辐射照射时能产生酸的化合物; （C）具有选自（X）碱溶性基团（XI）中的至少一种基团的含硅树脂，（XI）能够在碱性显影剂的作用下分解的基团和树脂的溶解度增加（C ）和（XII）能够在酸的作用下分解并增加树脂（C）在碱性显影剂中的溶解度的基团，和（D）溶剂，所述方法包括：（i）步骤将正性抗蚀剂组合物施加到基材上以形成抗蚀剂涂层，（ii）通过浸没液体将抗蚀剂涂层曝光到光的步骤，（iii）去除残留在抗蚀剂涂层上的浸渍液体的步骤，（iv ）加热抗蚀剂涂层的步骤，和（v）显影抗蚀涂层的步骤。

55. 发明公开

EP1536285A3 Photosensitive composition, compound for use in the photosensitive composition, and pattern forming method using the photosensitive composition 有权
标题翻译：感光性组合物，化合物在该组合物中使用，和使用这样的组合物的图像记录方法
公开(公告)号：EP1536285A3
公开(公告)日：2007-07-25
申请号：EP04027406.0
申请日：2004-11-18
申请人： FUJIFILM Corporation
发明人： Wada, Kenji , Kodama, Kunihiko
IPC分类号： G03F7/004 , G03F7/039 , G03F7/038
CPC分类号： C07C381/12 , C07C309/39 , C07C309/42 , C07C323/66 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/0758 , G03F7/2041 , Y10S430/106 , Y10S430/111 , Y10S430/122
摘要： A photosensitive composition comprising a compound capable of generating a specific sulfonic acid upon irradiation with actinic rays or a radiation; a compound capable of generating a specific sulfonic acid upon irradiation with an actinic ray or a radiation; and a pattern forming method using a photosensitive composition comprising a compound capable of generating a specific sulfonic acid upon irradiation with an actinic ray or a radiation.

56. 发明公开

EP1804120A1 Positive resist composition and pattern forming method using the same 审中-公开
标题翻译：积极的抗性和免疫力zur Strukturformung unter Verwendung dieser Zusammensetzung
公开(公告)号：EP1804120A1
公开(公告)日：2007-07-04
申请号：EP06026966.9
申请日：2006-12-27
申请人： Fujifilm Corporation
发明人： Kanda, Hiromi
IPC分类号： G03F7/039
CPC分类号： G03F7/0397 , G03F7/0395 , Y10S430/106 , Y10S430/114
摘要： A positive resist composition, which comprises: (A) a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having a repeating unit represented by formula (C) as defined in the specification; and (D) a solvent, wherein a content of the resin as the component (C) is from 0.1 to 20 mass% based on a solid content of the positive resist composition, and a pattern forming method using the same.
摘要翻译：一种正型抗蚀剂组合物，其包含：（A）具有单环或多环脂环族烃结构的树脂，其在碱显影剂中的溶解度在酸的作用下增加; （B）能够在用光化射线或辐射照射时能产生酸的化合物; （C）具有本说明书中定义的式（C）表示的重复单元的树脂; 和（D）溶剂，其中作为成分（C）的树脂的含量相对于正性抗蚀剂组合物的固体成分为0.1〜20质量％，使用该溶剂的图案形成方法。

57. 发明公开

EP1789850A2 NOVEL RESIST MATERIAL AND METHOD FOR FORMING A PATTERNED RESIST LAYER ON A SUBSTRATE 有权
标题翻译：新型光刻胶材料和方法形成结构化抗蚀层在基底上
公开(公告)号：EP1789850A2
公开(公告)日：2007-05-30
申请号：EP05783896.3
申请日：2005-09-19
申请人： THE UNIVERSITY OF BIRMINGHAM
发明人： PALMER, Richard, Edward , ROBINSON, Alex , PREECE, Jon, Andrew
IPC分类号： G03F7/038
CPC分类号： G03F7/0382 , Y10S430/106 , Y10S430/115 , Y10S430/122
摘要： The present invention resides in a method for the formation of a patterned resist layer on a substrate surface by patternwise irradiation with actinic radiation. The first step of the method is formation of a coating layer comprising a substituted triphenylene compound having a diameter of between 1 and 3 nm, a sensitizer which increases the sensitivity of the exposed layer to the actinic radiation used in a subsequent irradiation step and a cross-linker on the substrate surface. Subsequently the coating layer is irradiated patternwise, and unirradiated areas of the coating layer are removed. The invention also resides in a resist material comprising a solution of: - (i) as the principal resist material a triphenylene derivative having a diameter of from 1 to 3 rim, (ii) a sensitizer which increases the sensitivity of the resist material to actinic radiation, and (iii) a cross linker capable of cross linking molecules of the triphenylene derivative, said cross linker optionally being constituted by a moiety attached to said triphenylene derivative.

58. 发明授权

EP1136885B1 Chemically amplified positive resist composition and patterning method 有权
标题翻译：一种化学放大型正光刻胶组合物和图案化工艺
公开(公告)号：EP1136885B1
公开(公告)日：2007-05-09
申请号：EP01302636.4
申请日：2001-03-21
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Takeda, Takanobu, Shin-Etsu Chemical Co., Ltd. , Watanabe, Jun, Shin-Etsu Chemical Co., Ltd. , Takemura, Katsuya, Shin-Etsu Chemical Co., Ltd. , Koizumi, Kenji, Shin-Etsu Chemical Co., Ltd.
IPC分类号： G03F7/004 , G03F7/039 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/027 , G03F7/039 , G03F7/0392 , G03F7/0397 , G03F7/40 , Y10S430/106

59. 发明授权

EP1096318B1 Resist composition and patterning process 有权
标题翻译：抗蚀剂组合物和图案转移过程
公开(公告)号：EP1096318B1
公开(公告)日：2007-05-09
申请号：EP00309392.9
申请日：2000-10-25
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Nishi, Tsunehiro, Shin-Etsu Chemical Co., Ltd. , Watanabe, Takeru, Shin-Etsu Chemical Co., Ltd. , Kinsho, Takeshi, Shin-Etsu Chemical Co., Ltd. , Hasegawa, Koji, Shin-Etsu Chemical Co., Ltd. , Kobayashi, Tomohiro, Shin-Etsu Chemical Co., Ltd. , Hatakeyama, Jun, Shin-Etsu Chemical Co., Ltd.
IPC分类号： G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106

60. 发明公开

EP1780198A1 Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权
标题翻译：新颖Fluorosulfonyloxyalkylsulfonatsalze和光产酸剂的衍生物，抗蚀剂组合物，以及图案转印过程
公开(公告)号：EP1780198A1
公开(公告)日：2007-05-02
申请号：EP06255510.7
申请日：2006-10-26
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Kobayashi, Katsuhiro , Ohsawa, Youichi , Kinsho, Takeshi , Watanabe, Takeru
IPC分类号： C07C309/05 , G03F7/004
CPC分类号： C07C381/12 , C07C309/07 , G03F7/0045 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/126
摘要： Sulfonate salts have the formula:
R 1 SO 3 -CH(Rf)-CF 2 SO 3 - M + wherein R 1 is alkyl or aryl, Rf is H or trifluoromethyl, and M + is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.

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