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51. 发明授权

EP1832673B1 Method for producing substrate for single crystal diamond growth 有权转让
公开(公告)号：EP1832673B1
公开(公告)日：2018-06-06
申请号：EP07004683.4
申请日：2007-03-07
申请人： Shin-Etsu Chemical Co., Ltd. , AGD Material Co.
发明人： SAWABE, Atsuhito , NOGUCHI, Hitoshi Advanced Functional Materials Research Center, SHIN-ETSU CHEMICAL CO., LTD. , Shintaro MAEDA
IPC分类号： C30B29/04 , H01L29/00 , C30B25/18 , H01L21/02
CPC分类号： C30B25/18 , C30B29/04 , H01L21/0242 , H01L21/02425 , H01L21/02433 , H01L21/02444 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L21/02658
摘要： There is disclosed a method for producing a substrate for single crystal diamond growth, comprising at least a step of preliminarily subjecting a substrate before single crystal diamond growth to a bias treatment for forming a diamond nucleus thereon by a direct-current discharge in which an electrode in a substrate side is a cathode, and wherein in the treatment, at least, a temperature of the substrate from 40 sec after an initiation of the bias treatment to an end of the bias treatment is held in a range of 800°C ± 60°C. There can be provided a method for producing a substrate for single crystal diamond growth, by which a single crystal diamond can be grown more certainly.

52. 发明授权

EP2760786B1 PROCÉDÉ DE FORMATION D'UNE COUCHE DE GRAPHÈNE À LA SURFACE D'UN SUBSTRAT COMPRENANT UNE COUCHE DE SILICIUM 有权
标题翻译：在包括硅层的衬底的表面上形成石墨层的方法
公开(公告)号：EP2760786B1
公开(公告)日：2018-05-02
申请号：EP12762648.9
申请日：2012-09-28
申请人： Centre National de la Recherche Scientifique
发明人： OUERGHI, Abdelkarim
IPC分类号： C01B32/20 , B82Y30/00 , B82Y40/00 , H01L21/02 , H01L29/16 , C01B32/184 , C01B32/188
CPC分类号： H01L21/02527 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B32/188 , H01L21/02381 , H01L21/0243 , H01L21/02447 , H01L21/02612 , H01L29/1606

53. 发明公开

EP3179518A4 THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY DEVICE 有权
公开(公告)号：EP3179518A4
公开(公告)日：2018-03-28
申请号：EP16822102
申请日：2016-02-03
申请人： BOE TECHNOLOGY GROUP CO LTD
发明人： HUANG YONGCHAO
IPC分类号： H01L29/45 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L21/02 , H01L21/04 , H01L27/12 , H01L27/32 , H01L29/16 , H01L29/167 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/66 , H01L29/786 , H01L51/52
CPC分类号： H01L29/4908 , G02F1/134309 , G02F1/13439 , G02F1/1362 , G02F1/136286 , G02F1/1368 , G02F2201/121 , G02F2201/123 , G02F2202/10 , H01L21/02527 , H01L21/0259 , H01L21/0262 , H01L21/043 , H01L21/044 , H01L27/124 , H01L27/3262 , H01L29/1606 , H01L29/167 , H01L29/408 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/458 , H01L29/66045 , H01L29/78606 , H01L29/78684 , H01L51/5206
摘要： The present disclosure provides a thin film transistor, a method for producing the same, an array substrate and a display apparatus. An electrode of the thin film transistor is made of Cu or Cu alloy, and an anti-oxidization layer is used to prevent oxidization of Cu. The thin film transistor includes a gate electrode, a gate insulation layer, a semiconductor active layer, a source electrode and a drain electrode provided on a base substrate, wherein the gate electrode and/or the drain and source electrodes is/are made of Cu or Cu alloy. The thin film transistor further includes an anti-oxidization layer made of a topological insulator material, the anti-oxidization layer being provided above and in contact with the gate electrode and/or the source and drain electrodes made of Cu or Cu alloy.

54. 发明公开

EP3246937A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING COMPOSITE SEMICONDUCTOR SUBSTRATE, COMPOSITE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR BONDING SUBSTRATE 有权
标题翻译：制造半导体衬底的方法，半导体衬底，制造复合半导体衬底，复合半导体衬底和半导体结合衬底的方法
公开(公告)号：EP3246937A1
公开(公告)日：2017-11-22
申请号：EP16737453.7
申请日：2016-01-15
申请人： Sumitomo Electric Industries, Ltd.
发明人： NISHIBAYASHI, Yoshiki , NAKAMAE, Kazuo
IPC分类号： H01L21/02 , H01L21/20 , H01L21/205 , H01L21/265
CPC分类号： H01L21/7813 , C30B25/18 , H01L21/02 , H01L21/02527 , H01L21/02529 , H01L21/0254 , H01L21/02557 , H01L21/0256 , H01L21/0262 , H01L21/02658 , H01L21/20 , H01L21/205 , H01L21/265 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/22 , H01L29/34
摘要： A method for manufacturing a semiconductor substrate according to the present invention includes preparing a seed substrate (1) containing a semiconductor material, forming an ion implanted layer (2) at a certain depth from a front surface of a main surface of the seed substrate (1) by implanting ions into the seed substrate (1), growing a semiconductor layer (3) on the main surface of the seed substrate (1) with a vapor-phase synthesis method, and separating a semiconductor substrate (5) including the semiconductor layer (3) and a part (1a) of the seed substrate by irradiating the front surface of the main surface of at least any of the semiconductor layer (3) and the seed substrate (1) with light (4).
摘要翻译：根据本发明的用于制造半导体衬底的方法包括：制备包含半导体材料的籽晶衬底（1）;在离种子衬底的主表面的前表面（距离衬底1的表面）一定深度处形成离子注入层（2） 1），通过向种子基板（1）内注入离子，利用气相合成法在种子基板（1）的主表面上生长半导体层（3），并将包含半导体基板通过用光（4）照射所述半导体层（3）和所述种子基板（1）中的至少任一个的所述主表面的前表面来形成所述种子基板的所述层（3）和所述种子基板的部分（1a）。

55. 发明公开

EP3243794A1 A METHOD OF MAKING AN ARRAY OF SENSOR PIXELS, AND ASSOCIATED APPARATUS AND METHODS 审中-公开
标题翻译：一种制造传感器像素阵列的方法以及相关装置和方法
公开(公告)号：EP3243794A1
公开(公告)日：2017-11-15
申请号：EP16168895.7
申请日：2016-05-10
申请人： Emberion Oy
发明人： Bower, Chris , White, Richard , Liu, Yinglin , Rushton, Ashley
IPC分类号： B82Y10/00 , B82Y15/00 , H01L21/02 , H01L29/66 , H01L27/146 , H01L29/16
CPC分类号： H01L29/1606 , B82Y10/00 , B82Y15/00 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L27/1461 , H01L27/14616 , H01L29/66015
摘要： A method (Fig. 4) of making an array of sensor pixels, the method comprising:
- forming an array of nucleation sites (415) on a growth substrate (Step 2), each nucleation site configured to facilitate the growth of a respective domain of channel material on the growth substrate and the array of nucleation sites having a predefined configuration corresponding to an arrangement of pixel regions on a target substrate;
- growing an array of domains (416) of channel material on the growth substrate from the array of respective nucleation sites to form a layer of channel material (step 3); - transferring the layer of channel material onto the target substrate such that the domains of channel material are substantially aligned with the pixel regions of the target substrate (step 6), to allow the formation of a pixel array.
Each pixel (Fig. 1) of the array comprises source (101) and drain (102) electrodes configured to enable a flow of electrical current through a respective domain of channel material (103), and a functionalising material (104) on the domain of channel material configured to produce a detectable change in the flow of electrical current on exposure to a physical stimulus which is indicative of one or more of the presence and magnitude of the physical stimulus.
In particular, the channel material (103) may be graphene or another two-dimensional material, and the functionalising material (104) may be quantum dots (107).
摘要翻译：一种制作传感器像素阵列的方法（图4），该方法包括： - 在生长衬底上形成成核位点阵列（415）（步骤2），每个成核位点被配置为促进相应域的生长在生长衬底上的沟道材料和具有与目标衬底上的像素区域的排列对应的预定义配置的成核位点阵列; - 从各个成核位点阵列在生长衬底上生长沟道材料的阵列域（416）以形成沟道材料层（步骤3）; - 将沟道材料层转移到目标衬底上，使得沟道材料的畴基本上与目标衬底的像素区域对准（步骤6），以允许形成像素阵列。阵列的每个像素（图1）包括被配置为使电流能够流过通道材料（103）的相应区域的源极（101）和漏极（102）电极，以及该区域上的官能化材料沟道材料被配置为在暴露于指示物理刺激的存在和量值中的一个或多个的物理刺激时产生电流的可检测变化。特别地，沟道材料（103）可以是石墨烯或另一种二维材料，并且功能化材料（104）可以是量子点（107）。

56. 发明公开

EP3234985A1 COMPOUND SEMICONDUCTOR DEVICE STRUCTURES COMPRISING POLYCRYSTALLINE CVD DIAMOND 有权
标题翻译：包含多晶CVD金刚石的化合物半导体器件结构
公开(公告)号：EP3234985A1
公开(公告)日：2017-10-25
申请号：EP15805528.5
申请日：2015-12-09
申请人： RFHIC Corporation
发明人： LOWE, Frank Yantis , FRANCIS, Daniel , NASSER-FAILI, Firooz , TWITCHEN, Daniel James
IPC分类号： H01L21/20 , H01L21/314 , H01L23/34
CPC分类号： H01L23/3732 , H01L21/02115 , H01L21/02271 , H01L21/02304 , H01L21/0237 , H01L21/02376 , H01L21/02444 , H01L21/02527 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L29/2003 , H01L29/7787
摘要： A semiconductor device structure comprising: a layer of single crystal compound semiconductor material; and a layer of polycrystalline CVD diamond material, wherein the layer of polycrystalline CVD diamond material is bonded to the layer of single crystal compound semiconductor material via a bonding layer having a thickness of less than 25 nm and a thickness variation of no more than 15 nm, wherein an effective thermal boundary resistance (TBR
eff ) as measured by transient thermoreflectance at an interface between the layer of single crystal compound semiconductor material and the layer of polycrystalline CVD diamond material is less than 25 m
2 K/GW with a variation of no more than 12 m
2 K/GW as measured across the semiconductor device structure, and wherein the layer of single crystal compound semiconductor material has one or both of the following characteristics: a charge mobility of at least 1200 cm
2 V
-1 s
-1 ; and a sheet resistance of no more than 700 Ω/square.
摘要翻译：一种半导体器件结构，包括：一层单晶化合物半导体材料; 和多晶CVD金刚石材料层，其中多晶CVD金刚石材料层经由厚度小于25nm且厚度变化不大于15nm的结合层结合到单晶化合物半导体材料层，其中通过在单晶化合物半导体材料层和多晶CVD金刚石材料层之间的界面处的瞬态热反射测量的有效热边界电阻（TBR eff）小于25m 2 K / GW，不变在整个半导体器件结构上测量的12m 2 K / G w以上，并且其中单晶化合物半导体材料层具有以下特性中的一个或两个：电荷迁移率至少为1200cm 2 V -1 s -1; 和不超过700Ω/平方的薄层电阻。

57. 发明公开

EP3229260A1 COMPOSITE SUBSTRATE MANUFACTURING METHOD AND COMPOSITE SUBSTRATE 审中-公开
标题翻译：复合材料基板制造方法和复合材料基板
公开(公告)号：EP3229260A1
公开(公告)日：2017-10-11
申请号：EP15864392.4
申请日：2015-10-22
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA Shoji
IPC分类号： H01L21/02 , H01L21/265 , H01L27/12
CPC分类号： H01L21/02527 , C23C16/0227 , C23C16/50 , C30B29/36 , H01L21/02378 , H01L21/02422 , H01L21/02631 , H01L21/265 , H01L21/76254 , H01L27/12
摘要： To provide a composite substrate whereby a nanocarbon film having no defect can be manufactured at low cost.
A method for manufacturing a composite substrate, including: implanting ion from a surface of a single crystal silicon carbide substrate to form an ion-implanted region; bonding an ion-implanted surface of the single crystal silicon carbide substrate and a main surface of a handle substrate, and peeling the single crystal silicon carbide substrate at the ion-implantedregion to transfer a single crystal silicon carbide thin film onto the handle substrate, wherein the surface to be bonded of the single crystal silicon carbide substrate and the surface to be bonded of the handle substrate each has a surface roughness RMS of 1.00 nm or less.
摘要翻译：提供一种复合衬底，由此能够以低成本制造没有缺陷的纳米碳膜。一种用于制造复合衬底的方法，包括：从单晶碳化硅衬底的表面注入离子以形成离子注入区域; 将所述单晶碳化硅衬底的离子注入表面与处理衬底的主表面键合，并且在所述离子注入区域处剥离所述单晶碳化硅衬底以将单晶碳化硅薄膜转移到所述处理衬底上，其中，单晶碳化硅衬底的待接合表面和待处理衬底的待接合表面各自具有1.00nm或更小的表面粗糙度RMS。

58. 发明公开

EP3222580A1 METHOD FOR PASSIVATING GRAPHENE 审中-公开
标题翻译：钝化石墨的方法
公开(公告)号：EP3222580A1
公开(公告)日：2017-09-27
申请号：EP16461512.2
申请日：2016-03-21
申请人： Instytut Technologii Materialów Elektronicznych
发明人： Ciuk, Tymoteusz , Strupinski, Wlodzimierz
IPC分类号： C01B32/00
CPC分类号： C01B32/194 , B82Y30/00 , B82Y40/00 , H01L21/02378 , H01L21/02527 , H01L21/0262 , H01L21/02664
摘要： The present invention relates to a method for passivating graphene in a graphene-based device, wherein graphene layer is deposited on a dielectric support, the method comprising pre-heating the graphene-based device under vacuum conditions, followed by covering graphene surface with a silicone layer. The invention also relates to a graphene-based device containing at least one graphene surface passivated by a silicone layer. The passivated graphene-based devices show stabilised graphene's electrical properties in electronic devices such as charge carrier concentration and charge carrier mobility.
摘要翻译：本发明涉及一种用于钝化石墨烯基器件中的石墨烯的方法，其中石墨烯层沉积在介电载体上，所述方法包括在真空条件下预加热基于石墨烯的器件，接着用硅酮覆盖石墨烯表面层。本发明还涉及包含至少一个石墨烯表面的石墨烯基装置，所述石墨烯表面被硅氧烷层钝化。钝化的基于石墨烯的器件在电子器件中表现出稳定的石墨烯的电学性质，例如电荷载流子浓度和电荷载流子迁移率。

59. 发明公开

EP3211658A1 METHOD FOR MANUFACTURING DIAMOND SUBSTRATE 有权
标题翻译：制造金刚石衬底的方法
公开(公告)号：EP3211658A1
公开(公告)日：2017-08-30
申请号：EP17000295.0
申请日：2017-02-23
申请人： Shin-Etsu Chemical Co., Ltd. , National Institute of Advanced Industrial Science and Technology , National University Corporation Kanazawa University
发明人： Noguchi, Hitoshi , Shirai, Shozo , Makino, Toshiharu , Ogura, Masahiko , Kato, Hiromitsu , Kawashima, Hiroyuki , Kuwabara, Daisuke , Yamasaki, Satoshi , Takeuchi, Daisuke , Tokuda, Norio , Inokuma, Takao , Matsumoto, Tsubasa
IPC分类号： H01L21/02
CPC分类号： C30B25/186 , C30B25/04 , C30B25/20 , C30B29/04 , H01L21/02376 , H01L21/02527 , H01L21/0262 , H01L21/02647 , H01L21/02658 , H01L21/3065 , H01L21/3081 , H01L29/1602
摘要： The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.
摘要翻译：本发明提供一种金刚石基板的制造方法，其包括：第一工序，在基础表面上准备图案金刚石;第二工序，除去附着在第一工序中准备的图案金刚石的壁上的异物;以及第三步从第一步骤中制备的图案化金刚石生长金刚石，以在第一步骤中制备的图案化金刚石的图案间隙中形成金刚石。可以提供一种用于制造具有少量位错缺陷的金刚石基板的方法，其中抑制了异常生长颗粒的产生。

60. 发明授权

EP2463893B1 Graphene structure and method of fabricating the same 有权转让
标题翻译：石墨烯结构及其制造方法
公开(公告)号：EP2463893B1
公开(公告)日：2017-07-19
申请号：EP11189558.7
申请日：2011-11-17
申请人： Samsung Electronics Co., Ltd.
发明人： Choi, Byoung-lyong , Lee, Eunk-yung , Whang, Dong-mok
IPC分类号： H01L21/20 , H01L21/02
CPC分类号： H01L21/02381 , C01B32/182 , H01L21/02428 , H01L21/02444 , H01L21/0245 , H01L21/02502 , H01L21/02505 , H01L21/02527 , H01L21/0259 , H01L21/02606 , H01L21/02664 , Y10T428/13 , Y10T428/24273 , Y10T428/24479 , Y10T428/30

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