会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 56. 发明公开
    • LOW-LIGHT-FAILURE HIGH-POWER LED ROAD LAMP AND MANUFACTURING METHOD THEREFOR
    • LEISTUNGSSTARKE LED-STRASSENLAMPE MIT GERINGEM LICHTFEHLER UND HERSTELLUNGSVERFAHRENDAFÜR
    • EP3015764A4
    • 2016-06-29
    • EP14816753
    • 2014-05-26
    • CHEN ZHIMINGGU WEISUZHOU WEIYUAN NEW MATERIAL TECHNOLOGY CO LTD
    • CHEN ZHIMINGGU WEI
    • H01L35/32F21V29/51F21V29/54H01L35/34
    • F21V29/76F21S8/086F21V29/51F21V29/54F21V29/71F21W2131/103F21Y2115/10H01L35/32H01L35/34
    • Disclosed is a low light failure high power LED street lamp and a method for manufacturing the same. A color mark is made in advance on a tail end surface used for manufacturing an N-type semiconductor element (6) or a P-type semiconductor element (7); then the N-type semiconductor element (6) and P-type semiconductor element (7) are arranged in a manner of matrix between an upper beryllium-oxide ceramic wafer (8) and a lower beryllium-oxide ceramic wafer (9), so that the head end of the N-type semiconductor element (6) is connected with the tail end of the P-type semiconductor element (7) or the tail end of the N-type semiconductor element (6) is connected with the head end of the P-type semiconductor element (7), then the lower beryllium-oxide ceramic wafer (9) is attached, through a graphene thermal conductive greaseon layer (4), on the backside of the circuit board (2) which is mounted with LED bulbs (3), and a heat sink (15) is mounted on the upper beryllium-oxide ceramic wafer (8), then the circuit board (2) together with the heat sink (15) are mounted into a street lamp housing (1).
    • 公开了一种低光衰大功率LED路灯及其制造方法。 在用于制造N型半导体元件(6)或P型半导体元件(7)的尾端表面上预先制作彩色标记; 那么N型半导体元件(6)和P型半导体元件(7)以上铍氧化物陶瓷晶片(8)和下铍氧化物陶瓷晶片(9)之间的矩阵方式排列,因此 N型半导体元件(6)的前端与P型半导体元件(7)的尾端连接,或者N型半导体元件(6)的尾端与头端 通过石墨烯导热油脂层(4),在安装有P型半导体元件(7)的电路板(2)的背面上安装下部铍氧化物陶瓷晶片(9) 在上铍氧化物陶瓷晶片(8)上安装有LED灯泡(3)和散热器(15),然后将电路板(2)与散热片(15)一起安装在路灯壳体( 1)。