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51. 发明公开

EP1799612A2 MICROSYSTEM AND METHOD FOR POSITIONING A SECOND ELEMENT WITH RESPECT TO A FIRST ELEMENT IN A MICROSYSTEM 有权
标题翻译：微系统和方法用于定位的第二部件与在一个微系统第一要素
公开(公告)号：EP1799612A2
公开(公告)日：2007-06-27
申请号：EP05791710.6
申请日：2005-09-29
申请人： International Business Machines Corporation
发明人： DESPONT, Michel , DÜRIG, Urs, T. , GOTSMANN, Bernd, W.
IPC分类号： B81B3/00
CPC分类号： B81B3/0018 , F03G7/06 , F03G7/065 , H01H2037/008
摘要： A microsystem, comprising a first static element (1), a second, movable and unattached element (2), an actuator (3) for effecting a force between the first and the second element (1, 2), which actuator (3) is designed for controlling a temperature (T1, T2) of one of the first element (1) and the second element (2). A corresponding method for positioning a second element (2) with respect to a first element (1) in a microsystem is introduced.

52. 发明公开

EP3396844A1 ROTATION DEVICE, OPTICAL SCANNING DEVICE, AND IMAGE DISPLAY DEVICE 审中-公开
公开(公告)号：EP3396844A1
公开(公告)日：2018-10-31
申请号：EP16878583.0
申请日：2016-12-16
申请人： Ricoh Company, Ltd.
发明人： SHINKAWA, Mizuki , HASHIGUCHI, Tsuyoshi
IPC分类号： H02N2/12 , B81B3/00 , G02B26/08 , G02B26/10 , G02B27/01 , H01L41/09 , H02N2/14
CPC分类号： B81B3/0018 , B81B3/00 , G02B26/0858 , G02B26/10 , G02B26/101 , G02B27/01 , G02B27/0101 , H01L41/09 , H02N2/12 , H02N2/14
摘要： A rotating apparatus includes a folded back elastically deformable portion including a first piezoelectric element 20 for deforming a first elastically deformable portion 12 and a second piezoelectric element 21 for deforming a second elastically deformable portion 13, and the rotating apparatus rotates a movable portion around a predetermined rotation axis, by respectively applying a first driving voltage signal Va and a second driving voltage signal Vb that are different from each other to the first piezoelectric element and the second piezoelectric element, to deform the first elastically deformable portion and the second elastically deformable portion; wherein a connection position 113 and a connection position 116 have a relationship of being relatively the same positions or a relationship of being symmetrical positions across all of the folded back structures, the connection position 113 being a position where a signal line 111 of the first driving voltage signal Va and the first piezoelectric element are connected in the first piezoelectric element, and the connection position 116 being a position where a signal line 115 of the second driving voltage signal Vb and the second piezoelectric element are connected in the second piezoelectric element.

53. 发明授权

EP2439172B1 Anti-stiction method in an inertial MEMS 有权
标题翻译：惯性MEMS中的抗粘连方法
公开(公告)号：EP2439172B1
公开(公告)日：2018-05-02
申请号：EP10186715.8
申请日：2010-10-06
申请人： Sercel
发明人： Moreau, Maurice
IPC分类号： B81C1/00
CPC分类号： G01P21/00 , B81B3/0018 , B81B2201/0235 , B81C1/00968 , G01P15/125
摘要： An anti-stiction method is proposed in an inertial micro-electro-mechanical device comprising: - a mobile mass (150), suspended to an armature via spring means (115), comprising at least one mobile electrode; and - at least one fixed electrode rigidly attached to the armature, each fixed electrode cooperating with one of said at least one mobile electrode to form a pair of electrodes. The anti-stiction method is such that it carries out a step of detecting, for at least one stuck pair of electrodes, a stiction associated to a stiction force and at least one separating step, comprising a step of applying, during a predetermined time period, a predetermined voltage between the electrodes of at least one of said pair or pairs of electrodes, to create an electrostatic force.

54. 发明公开

EP2910522A1 METHOD OF FABRICATION OF AI/GE BONDING IN A WAFER PACKAGING ENVIRONMENT AND A PRODUCT PRODUCED THEREFROM 有权
标题翻译：用于生产AL / GE接口用来连接一个WAFERHÄUSUNGSZUSAMMENHANG体和一个生产的产品
公开(公告)号：EP2910522A1
公开(公告)日：2015-08-26
申请号：EP15161041.7
申请日：2006-03-09
申请人： InvenSense, Inc.
发明人： Nasiri, Steven , Flannery, Anthony
IPC分类号： B81C1/00 , H01L21/00 , H01L21/30 , H01L27/14 , H01L29/82 , H01L23/48
CPC分类号： B81C1/00238 , B23K20/023 , B81B3/0018 , B81B7/007 , B81B2203/0315 , B81B2207/012 , B81B2207/094 , B81C1/00269 , B81C3/001 , B81C2203/0118 , B81C2203/035 , B81C2203/038 , B81C2203/0792 , H01L21/187
摘要： A wafer structure comprising a first substrate comprising a cover wafer, the first substrate including at least one patterned germanium layer; and a second substrate, the second substrate including at least one patterned aluminum layer; characterized in that the at least one patterned germanium layer is bonded to a first portion of the at least one patterned aluminum layer to provide a eutectic alloy and create an electrical and mechanical contact; characterized in that a second portion of the at least one patterned aluminum layer is not bonded to the at least one patterned germanium layer and forms an external bond pad; and characterized in that the first substrate and second substrate form a cavity containing a MEMS structure within the bonded at least one germanium layer and first portion of the at least one patterned aluminum layer.
摘要翻译：一种晶片结构包括包含盖晶片的第一基板，该第一基板包括至少一个图案化的锗层; 和第二基板，所述第二基板包括至少一个图案化的铝层; 其特征在于DASS死至少一个图案化锗层被结合到所述至少一个图案化的铝层，以提供共晶合金和在电和机械接触的创建的第一部分; 其特征在于，没有所述至少一个图案化的铝层的第二部分不键合到所述至少一个图案化的锗层和外部焊盘的形式; 其特征在于，也做了第一基板和第二基板形成含有键合的至少一个锗层和所述至少一个图案化的铝层的第一部分内的MEMS结构的空腔。

55. 发明授权

EP1859475B8 METHOD OF FABRICATION OF AL/GE BONDING IN A WAFER PACKAGING ENVIRONMENT AND A PRODUCT PRODUCED THEREFROM 有权转让
公开(公告)号：EP1859475B8
公开(公告)日：2015-07-15
申请号：EP06737697.0
申请日：2006-03-09
申请人： InvenSense, Inc.
发明人： NASIRI, Steven, S. , FLANNERY, Anthony, Francis, Jr.
IPC分类号： B81C1/00 , H01L21/00 , H01L21/30 , H01L27/14 , H01L29/82 , H01L23/48
CPC分类号： B81C1/00238 , B23K20/023 , B81B3/0018 , B81B7/007 , B81B2203/0315 , B81B2207/012 , B81B2207/094 , B81C1/00269 , B81C3/001 , B81C2203/0118 , B81C2203/035 , B81C2203/038 , B81C2203/0792 , H01L21/187
摘要： A wafer structure comprising a first substrate comprising a cover wafer, the first substrate including at least one patterned germanium layer; and a second substrate, the second substrate including at least one patterned aluminum layer; characterized in that the at least one patterned germanium layer is bonded to a first portion of the at least one patterned aluminum layer to provide a eutectic alloy and create an electrical and mechanical contact; characterized in that a second portion of the at least one patterned aluminum layer is not bonded to the at least one patterned germanium layer and forms an external bond pad; and characterized in that the first substrate and second substrate form a cavity containing a MEMS structure within the bonded at least one germanium layer and first portion of the at least one patterned aluminum layer.

56. 发明授权

EP2656006B1 STRUCTURE PLANAIRE POUR GYROMÈTRE TRI-AXE 有权转让
标题翻译：平面结构FOR A三轴陀螺
公开(公告)号：EP2656006B1
公开(公告)日：2015-07-01
申请号：EP11815479.8
申请日：2011-12-20
申请人： ONERA (Office National d'Etudes et de Recherches Aérospatiales)
发明人： ROLAND, Iännis , MASSON, Stève , DUCLOUX, Olivier
IPC分类号： G01C19/56
CPC分类号： B81B3/0018 , G01C19/5656 , G01C19/5747

57. 发明授权

EP2524390B1 MIKROELEKTROMECHANISCHES HALBLEITERSENSORBAUELEMENT 有权转让
标题翻译：微机电半导体传感器元
公开(公告)号：EP2524390B1
公开(公告)日：2014-08-27
申请号：EP11700636.1
申请日：2011-01-10
申请人： ELMOS Semiconductor AG
发明人： DOELLE, Michael
IPC分类号： B81C1/00 , B81B3/00 , G01L9/00
CPC分类号： B81C1/00158 , B81B3/0018 , B81B3/0021 , B81B3/007 , B81B3/0072 , B81B3/0081 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81C1/00626 , B81C99/0035 , B81C2201/019 , G01L9/0047 , H01L29/4916 , H01L29/84

58. 发明授权

EP1799612B1 MICROSYSTEM AND METHOD FOR POSITIONING A SECOND ELEMENT WITH RESPECT TO A FIRST ELEMENT IN A MICROSYSTEM 有权
标题翻译：微系统和方法用于定位的第二部件与在一个微系统第一要素
公开(公告)号：EP1799612B1
公开(公告)日：2014-07-02
申请号：EP05791710.6
申请日：2005-09-29
申请人： International Business Machines Corporation
发明人： DESPONT, Michel , DÜRIG, Urs, T. , GOTSMANN, Bernd, W.
IPC分类号： B81B3/00
CPC分类号： B81B3/0018 , F03G7/06 , F03G7/065 , H01H2037/008

59. 发明授权

EP2523896B1 MIKROELEKTROMECHANISCHES HALBLEITERBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG 有权转让
标题翻译：微电子力学半导体元件及其制造方法
公开(公告)号：EP2523896B1
公开(公告)日：2014-06-11
申请号：EP11700163.6
申请日：2011-01-10
申请人： ELMOS Semiconductor AG
发明人： SENF, Reinhard
IPC分类号： G01L9/00
CPC分类号： B81C1/00158 , B81B3/0018 , B81B3/0021 , B81B3/007 , B81B3/0072 , B81B3/0081 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81C1/00626 , B81C99/0035 , B81C2201/019 , G01L9/0047 , H01L29/4916 , H01L29/84

60. 发明公开

EP2695848A1 Integrated circuit with MEMS element designed to avoid sticking and manufacturing method thereof 审中-公开
标题翻译：集成电路与MEMS元件设计，以避免其粘附和制造方法
公开(公告)号：EP2695848A1
公开(公告)日：2014-02-12
申请号：EP12180166.6
申请日：2012-08-10
申请人： NXP B.V.
发明人： Lander, Robert
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81B3/0018 , B81C1/00134 , B81C1/00928 , B81C2201/0133 , B81C2203/0136 , B81C2203/0145
摘要： An integrated circuit is disclosed comprising a MEMS (microelectromechanical system) element (10) in a plane of the integrated circuit, the MEMS element being suspended in a cavity (160) over a substrate (100), said cavity including a first cavity region (20) in said plane spatially separating an edge of the MEMS element from a wall section (12) of the cavity, said edge being arranged to be displaced relative to the wall section; and a second cavity region (30) in said plane forming part of a fluid path further including the first cavity region, said fluid path defining a first volume; and a third cavity region (34) in said plane defining a second volume in fluid connection with the second cavity region, wherein the maximum width of the second cavity region is larger than the maximum width of the third cavity region, the second and third cavity regions having maximum widths that are larger than the maximum width of the first cavity region, and wherein at least a part of the second volume is excluded from the fluid path.
摘要翻译：上集成电路计划盘游离缺失，其包括在该集成电路的MEMS（微机电系统）元件（10），所述MEMS元件悬挂在在基片的空腔（160）（100），所述腔体包括第一腔区域（ 20）所述计划在从腔的壁部（12）的MEMS元件的边缘在空间上分离，所述边缘被布置相对于壁部分被移位; 和第二腔区域（30）的平面内成形进一步包括在第一腔室区域的流体路径的一部分，所述流体路径限定在所述A第一体积; 并且在所述限定与第二腔区域流体连接的第二体积，worin第二空腔区域的最大宽度的第三空腔区域（34）平面比第三腔区域的最大宽度，所述第二和第三空腔更大的具有最大宽度做区域比第一腔区域的最大宽度大，并且worin至少所述第二体积的一部分被从所述流体路径中排除。

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