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41. 发明公开

EP2160770A4 ULTRAVIOLET RADIATION LIGHT EMITTING DIODE DEVICE 有权
标题翻译：紫外线辐射LEDS COMPONENT
公开(公告)号：EP2160770A4
公开(公告)日：2013-12-25
申请号：EP08757172
申请日：2008-06-02
申请人： TROJAN TECHN INC
发明人： KNIGHT DOUGLAS GORDON , FRASER JIM , SASGES MICHAEL
IPC分类号： H01L33/00 , A23C3/07 , A23D9/06 , A61L2/10 , A61M1/36 , C02F1/32 , H01L23/29 , H01L29/20 , H01L29/201 , H01L33/40
CPC分类号： A61L2/10 , A23C3/076 , H01L33/405 , H01L2224/14
摘要： There is disclosed an ultraviolet radiation device. The device comprises a base portion, a plurality of semiconductor structures connected to the base portion and an ultraviolet radiation transparent element connected to the plurality of semiconductor structures. Preferably: (i) the at least one light emitting diode is in direct contact with the ultraviolet radiation transparent element, or (ii) there is a spacing between the at least one light emitting diode and the ultraviolet radiation transparent element, the spacing being substantially completely free of air. There is also disclosed a fluid treatment system incorporating the ultraviolet radiation device.

42. 发明公开

EP2259295A4 EPITAXIAL SUBSTRATE FOR SMEICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, AND PROCESS FOR PRODUCING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：外延片用于半导体元件，半导体元件及其制造方法的外延衬底半导体元件
公开(公告)号：EP2259295A4
公开(公告)日：2013-11-27
申请号：EP09725966
申请日：2009-03-13
申请人： NGK INSULATORS LTD
发明人： MIYOSHI MAKOTO , KURAOKA YOSHITAKA , SUMIYA SHIGEAKI , TANAKA MITSUHIRO
IPC分类号： H01L21/338 , C23C16/34 , C30B19/00 , C30B23/02 , C30B25/02 , C30B29/38 , C30B29/40 , H01L21/02 , H01L21/20 , H01L21/205 , H01L29/20 , H01L29/201 , H01L29/778 , H01L29/812
CPC分类号： H01L21/0262 , C30B19/00 , C30B23/02 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02378 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L29/201 , H01L29/7786

43. 发明公开

EP2355158A3 Field effect transistor with conduction band electron channel and uni-terminal response 有权
标题翻译：场效应晶体管导带电子通道和单极响应
公开(公告)号：EP2355158A3
公开(公告)日：2013-02-20
申请号：EP11000710.1
申请日：2011-01-28
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Passlack, Matthias
IPC分类号： H01L29/778 , H01L29/205 , H01L29/43 , H01L29/201 , H01L29/51
CPC分类号： H01L29/7787 , B82Y10/00 , H01L21/8252 , H01L27/088 , H01L27/092 , H01L29/122 , H01L29/155 , H01L29/20 , H01L29/201 , H01L29/205 , H01L29/432 , H01L29/517 , H01L29/7783 , H01L31/03046 , H01L31/035236 , H01L31/1844
摘要： A uni-terminal transistor device is described. In one embodiment, an n-channel transistor comprises a first semiconductor layer having a discrete hole level H 0 ; a second semiconductor layer having a conduction band minimum E C2 ; a wide bandgap semiconductor barrier layer disposed between the first and the second semiconductor layers; a gate dielectric layer disposed above the first semiconductor layer; and a gate metal layer disposed above the gate dielectric layer and having an effective workfunction selected to position the discrete hole level H 0 below the conduction band minimum E c2 for zero bias applied to the gate metal layer and to obtain n-terminal characteristics.

44. 发明公开

EP2492962A2 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：EP2492962A2
公开(公告)日：2012-08-29
申请号：EP12157056.8
申请日：2012-02-27
申请人： Renesas Electronics Corporation
发明人： Ando, Yuji
IPC分类号： H01L29/778 , H01L29/20 , H01L29/201 , H01L29/04
CPC分类号： H01L29/7786 , H01L29/045 , H01L29/2003 , H01L29/201 , H01L29/7783 , H01L29/7787
摘要： A semiconductor device including a field effect transistor having a buffer layer (11) subjected to lattice relaxation, a channel layer (12), and an electron supply layer (13) formed in this order with group-III nitride semiconductors respectively in a growth mode parallel with a [0001] or [000-1] crystallographic axis over a substrate and having a source electrode and a drain electrode, those being coupled electrically to the channel layer, and a gate electrode formed over the electron supply layer, in which, in the buffer layer and the electron supply layer, a layer existing on the group-III atomic plane side of the channel layer has a lattice constant larger than a layer existing on the group-V atomic plane side of the channel layer; and the electron supply layer has a bandgap larger than the channel layer.
摘要翻译：一种包括场效应晶体管的半导体器件，所述场效应晶体管具有经受晶格弛豫的缓冲层（11），沟道层（12）和电子供应层（13），其分别以III族氮化物半导体以生长模式与衬底上的[0001]或[000-1]晶轴平行，并且具有源电极和漏电极，那些电连接到沟道层的电极和形成在电子供应层上的栅电极，其中，在所述缓冲层和所述电子供给层中，存在于所述沟道层的所述III族原子平面侧上的层具有比所述沟道层的所述V族原子平面侧上存在的层更大的晶格常数; 并且电子供应层具有比沟道层大的带隙。

45. 发明公开

EP2139031A4 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：EP2139031A4
公开(公告)日：2011-11-30
申请号：EP08872677
申请日：2008-10-03
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： FUJIKAWA KAZUHIRO , HARADA SHIN
IPC分类号： H01L21/338 , H01L21/28 , H01L21/337 , H01L29/04 , H01L29/201 , H01L29/778 , H01L29/78 , H01L29/808 , H01L29/812
CPC分类号： H01L29/808 , H01L21/047 , H01L29/045 , H01L29/0634 , H01L29/1608 , H01L29/6606 , H01L29/812

46. 发明授权

EP1088347B1 Single charge carrier transistor and detection method using the same 有权
标题翻译：相同的单个电荷载体晶体管和检测方法，使用
公开(公告)号：EP1088347B1
公开(公告)日：2011-11-23
申请号：EP99957113.6
申请日：1999-06-18
申请人： QinetiQ Limited
发明人： JEFFERSON, John Henry , PHILLIPS, Timothy Jonathan
IPC分类号： H01L29/772 , H01L29/78 , H01L29/201 , H01L29/205 , H01L29/221 , H01L29/225
CPC分类号： B82Y10/00 , H01L29/125 , H01L29/127 , H01L29/66469 , H01L29/7613 , H01L29/775 , Y10S977/937
摘要： A single electron on hole field effect transistor fabricated from a narrow band gap semiconductor. The transistor is such that the valence and conduction bands have sufficiently similar energy levels such that a top region of the valence band at one point (37), e.g. under a gate electrode (34), within the current path of the transistor can be forced to be higher than the bottom region of the conduction band at another point within the transistor, allowing Zener tunnelling to occur. The transistor is fabricated from semiconductors with band gaps narrow enough to allow this to occur, for instance InSb and InAISb, CdTe and CdxHg1-xTe.

47. 发明公开

EP2290675A3 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device 失效
标题翻译：用于半导体器件的外延衬底，半导体器件和用于半导体器件的外延衬底的制造方法
公开(公告)号：EP2290675A3
公开(公告)日：2011-08-24
申请号：EP10172643.8
申请日：2010-08-12
申请人： NGK Insulators, Ltd.
发明人： Miyoshi, Makoto , Kuraoka, Yoshitaka , Sumiya, Shigeaki , Ichimura, Mikiya , Sugiyama, Tomohiko , Tanaka, Mitsuhiro
IPC分类号： H01L21/335 , H01L29/20 , H01L29/778 , H01L29/201
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/201 , H01L29/66462
摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate (1), a channel layer (3) formed of a first group III nitride that contains at least Al and Ga and has a composition of In x1 Al y1 Ga z1 N (x1+y1+z1=1) is formed. On the channel layer (3), a barrier layer (5) formed of a second group III nitride that contains at least In and Al and has a composition of In x2 Al y2 Ga z2 N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is smaller than an In composition ratio of a portion other than the near-surface portion.
摘要翻译：本发明提供一种能够实现肖特基接触特性优异且器件特性良好的半导体装置的外延基板。在基底基板1上形成由至少含有Al和Ga且组成为Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的第一III族氮化物构成的沟道层（3）。在沟道层（3）上，形成由至少包含In和Al且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的势垒层（5）近表面部分的比率小于除近表面部分以外的部分的In组成比例。

48. 发明公开

EP2259287A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, AND PROCESS FOR PRODUCING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：外延片用于半导体元件，半导体元件及其制造方法的外延衬底半导体元件
公开(公告)号：EP2259287A1
公开(公告)日：2010-12-08
申请号：EP09723780.4
申请日：2009-03-13
申请人： NGK Insulators, Ltd.
发明人： MIYOSHI, Makoto , KURAOKA, Yoshitaka , SUMIYA, Shigeaki , TANAKA, Mitsuhiro
IPC分类号： H01L21/205 , C23C16/34 , C30B29/38 , H01L21/20 , H01L21/338 , H01L29/201 , H01L29/778 , H01L29/812
CPC分类号： H01L29/2003 , C23C16/303 , H01L21/0237 , H01L21/02378 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/201 , H01L29/66462 , H01L29/778 , H01L29/7786
摘要： Provided is an epitaxial substrate capable of manufacturing a HEMT device that has excellent two-dimensional electron gas characteristics and is capable of performing normally-off operation. A channel layer is formed of a first group III nitride represented by In x1 Al y1 Ga z1 N (x1+y1+z1=1) so as to have a composition in a range determined by x1=0 and 0≤y1≤0.3. A barrier layer is formed of a second group III nitride represented by In x2 Al y2 Ga z2 N (x2+y2+z2=1) so as to have a composition, in a ternary phase diagram with InN, AlN and GaN being vertices, in a range surrounded by four straight lines determined in accordance with the composition (AlN molar fraction) of the first group III nitride and to have a thickness of 5 nm or less.

49. 发明公开

EP2139031A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件和用于制造半导体器件的方法
公开(公告)号：EP2139031A1
公开(公告)日：2009-12-30
申请号：EP08872677.3
申请日：2008-10-03
申请人： Sumitomo Electric Industries, Ltd.
发明人： FUJIKAWA, Kazuhiro , HARADA, Shin
IPC分类号： H01L21/338 , H01L21/28 , H01L21/337 , H01L29/04 , H01L29/201 , H01L29/778 , H01L29/78 , H01L29/808 , H01L29/812
CPC分类号： H01L29/808 , H01L21/047 , H01L29/045 , H01L29/0634 , H01L29/1608 , H01L29/6606 , H01L29/812
摘要： A substrate composed of hexagonally crystalline SiC is prepared such that its main surface is in the direction at which the minimum angle between the main surface and a plane perpendicular to the (0001) plane is one degree or less, for example, in the direction at which the minimum angle between the main surface and the [0001] direction, which is perpendicular to the (0001) plane, is one degree or less. A horizontal semiconductor device is formed on one main surface of the substrate prepared by the foregoing method. Thus, it was possible to improve the value of breakdown voltage significantly over the horizontal semiconductor device in which the main surface of the substrate composed of hexagonally crystalline SiC is in the direction along the (0001) direction.
摘要翻译：由六方晶系的SiC构成的基板以其主表面在主表面与垂直于（0001）面的平面之间的最小角度为例如1°以下的方向其中主表面与垂直于（0001）平面的[0001]方向之间的最小角度为1度或更小。在由上述方法制备的衬底的一个主表面上形成水平半导体器件。因此，与由六方晶系的SiC构成的基板的主表面在（0001）方向上的方向相比，能够大幅提高击穿电压的值。

50. 发明公开

EP1821344A3 Heterojunction transistors including energy barriers and related methods 有权转让
标题翻译：具有能量障碍和相关方法异质结晶体管
公开(公告)号：EP1821344A3
公开(公告)日：2009-10-21
申请号：EP06126233.3
申请日：2006-12-15
申请人： Cree Inc.
发明人： Saxler, Adam William , Wu, Yifeng , Parikh, Primit
IPC分类号： H01L29/778 , H01L29/201 , H01L21/335
CPC分类号： H01L29/7785 , H01L29/2003 , H01L29/207 , H01L29/66462 , H01L29/7783 , H01L29/802
摘要： A heterojunction transistor may include a channel layer (14) comprising a Group III nitride, a barrier layer (16) comprising a Group III nitride on the channel layer, and an energy barrier (30, 32, 34) comprising a layer of a Group III nitride including indium on the channel layer such that the channel layer is between the barrier layer and the energy barrier. The barrier layer may have a bandgap greater than a bandgap of the channel layer, and a concentration of indium (In) in the energy barrier may be greater than a concentration of indium (In) in the channel layer. Related methods are also discussed.

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