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41. 发明公开

EP2461436A4 NITRIDE-SEMICONDUCTOR LASER DIODE 有权
标题翻译： NITRIDHALBLEITERLASERDIODE
公开(公告)号：EP2461436A4
公开(公告)日：2017-01-25
申请号：EP10804367
申请日：2010-07-26
申请人： NICHIA CORP
发明人： MIYOSHI TAKASHI
IPC分类号： H01S5/343
CPC分类号： H01S5/3013 , B82Y20/00 , H01S5/0021 , H01S5/22 , H01S5/3063 , H01S5/34 , H01S5/34333
摘要： A nitride semiconductor laser diode includes a substrate, an n-side nitride semiconductor layer formed on the substrate, an active layer formed on the n-side nitride semiconductor layer and having a light emitting layer including In x Al y Ga 1-x-y N (0
摘要翻译：氮化物半导体激光二极管包括衬底，形成在衬底上的n侧氮化物半导体层，形成在n侧氮化物半导体层上并具有发光层的有源层，该发光层包括In x Al y Ga 1-xy N（ 0

42. 发明公开

EP3057185A1 QUANTUM PHOTONIC IMAGERS AND METHODS OF FABRICATION THEREOF 无效
标题翻译：量子光子成像器及其制造方法
公开(公告)号：EP3057185A1
公开(公告)日：2016-08-17
申请号：EP16150217.4
申请日：2008-09-16
申请人： Ostendo Technologies, Inc.
发明人： EL-GHOROURY, Hussein, S. , BROWN, Robert, G.W. , MCNEILL, Dale, A. , DENBOER, Huibert , LANZONE, Andrew, J.
IPC分类号： H01S5/42 , H01S5/022 , H01S5/18 , H01S5/10
CPC分类号： H01S5/4043 , B82Y20/00 , G09G3/2018 , G09G3/32 , G09G2300/0842 , G09G2310/0235 , G09G2340/06 , H01S5/02276 , H01S5/105 , H01S5/18 , H01S5/2009 , H01S5/3063 , H01S5/34326 , H01S5/34333 , H01S5/4093 , H04N9/3161
摘要： A digital semiconductor structure (220) for bonding to a two-dimensional multicolor light emitting pixel array (210) comprises a plurality of two-dimensional arrays of pixel logic cells (228), a digital control logic region (229), a plurality of device contact pads (221) and a plurality of metal layers configured to interconnect the array of pixel logic cells (228) with the digital control logic region (229), connect the digital control logic region (229) with the plurality of device contact pads (221), and for interconnecting the array of pixel logic cells (228) with the two-dimensional multicolor light emitting pixel array (210).
摘要翻译：用于键合到二维多色发光像素阵列（210）的数字半导体结构（220）包括多个像素逻辑单元（228）的二维阵列，数字控制逻辑区域（229），多个设备接触焊盘（221）和被配置为将像素逻辑单元阵列（228）与数字控制逻辑区域（229）互连的多个金属层，将数字控制逻辑区域（229）与多个器件接触焊盘（221），并且用于将所述像素逻辑单元阵列（228）与所述二维多色发光像素阵列（210）互连。

43. 发明公开

EP2816682A2 Semiconductor DBR, semiconductor light-emitting device, solid-state laser, photoacoustic apparatus, image-forming apparatus, and method for manufacturing semiconductor DBR 有权
标题翻译：半导体DBR半导体发光器件，固态激光器，光声设备，图像形成装置及其制造方法半导体DBR
公开(公告)号：EP2816682A2
公开(公告)日：2014-12-24
申请号：EP14171072.3
申请日：2014-06-04
申请人： Canon Kabushiki Kaisha
发明人： Kawashima, Takeshi
IPC分类号： H01S5/183 , H01L33/46 , H01S3/0941 , H01S5/32 , H01S5/343 , H01S5/42 , H01S3/16 , H01S5/30
CPC分类号： G02B1/14 , G01N21/1702 , G02B1/105 , G03G15/04072 , H01L33/10 , H01L33/105 , H01L33/46 , H01L51/5265 , H01S3/0941 , H01S3/1633 , H01S5/18308 , H01S5/18358 , H01S5/18361 , H01S5/187 , H01S5/3063 , H01S5/3201 , H01S5/34333 , H01S5/423 , H01S2304/04
摘要： A semiconductor distributed Bragg reflector (DBR) (110) including a first multilayer structure (103) including a plurality of first semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of first semiconductor layers; a second multilayer structure (104) including a plurality of third semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of third semiconductor layers; and a protection layer (105) interposed between the first multilayer structure and the second multilayer structure. The semiconductor layer has a lower decomposition temperature than the first semiconductor layer. The third semiconductor layer has a lower decomposition temperature than the second semiconductor layer.

44. 发明公开

EP2178129A4 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译： VERFAHREN ZU SEINER HERSTELLUNG的LECTEMITTITENDES HALBLEITERBAUEMENT
公开(公告)号：EP2178129A4
公开(公告)日：2012-08-29
申请号：EP08791964
申请日：2008-07-31
申请人： NICHIA CORP
发明人： ICHIHARA TAKASHI , YOSHIDA HIROFUMI , YAMADA TAKAO , WAKAI YOHEI
IPC分类号： H01L33/00 , H01L21/301 , H01S5/02 , H01S5/32 , H01S5/323
CPC分类号： H01S5/0201 , B82Y20/00 , H01L33/0095 , H01S5/0202 , H01S5/0213 , H01S5/305 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/34333
摘要： A semiconductor light emitting element, which has a substantially square shape in plan view, comprising: a sapphire substrate (10); and a gallium nitride compound semiconductor layer (12, 13, 14) laminated on a first main face of said substrate (10), a plurality of protruding portions (11) with a polygonal bottom face shape is formed on the first main face of the sapphire substrate (10), in a plan view from the first main face side of the sapphire substrate (10), the pair of opposing side faces of the semiconductor light emitting element that extend in a direction Y that is substantially perpendicular to a direction X that faces a single acute vertex from a center of gravity of the polyhedral shape of the protruding portion bottom face have a face that is inclined to the first main face on the first main face side of the sapphire substrate (10), and a face that is substantially perpendicular to the second main face on the second main face side of the sapphire substrate (10), and another pair of side faces is substantially perpendicular to the first main face of the sapphire substrate (10).
摘要翻译：从氮化镓系化合物半导体层叠在具有取向平坦性的蓝宝石基板上的晶片制造半导体发光元件的方法包括：在具有断开的蓝宝石基板的第一主面上层叠半导体层角度方向Xo平行于取向平面; 形成在所述半导体层侧上沿着与Xo方向大致正交的方向Y延伸的第一断裂槽; 形成从第一断裂槽内的预测分裂线向±Xo方向偏移预定距离并平行于蓝宝石衬底内部的第一断裂槽并对应于偏角的倾斜的第二断裂线 ¸; 以及沿着第一和/或第二断裂线分裂晶片。

45. 发明公开

EP2485345A2 Laser diode assembly 有权
标题翻译： Laserdiodenanordnung
公开(公告)号：EP2485345A2
公开(公告)日：2012-08-08
申请号：EP11008275.7
申请日：2011-10-13
申请人： Sony Corporation , Tohoku University
发明人： Kono, Shunsuke , Yokoyama, Hiroyuki , Kuramoto, Masaru , Oki, Tomoyuki
IPC分类号： H01S5/14 , H01S5/065
CPC分类号： H01S5/0657 , B82Y20/00 , H01S5/0287 , H01S5/141 , H01S5/3063 , H01S5/3202 , H01S5/3216 , H01S5/34333
摘要： A laser diode assembly includes: a mode-locked laser diode device; a diffraction grating that configures an external resonator, returns primary or more order diffracted light to the mode-locked laser diode device, and outputs 0-order diffracted light outside; and an imaging section provided between the mode-locked laser diode device and the diffraction grating and imaging an image of a light output end face of the mode-locked laser diode device on the diffraction grating.
摘要翻译：激光二极管组件包括：锁模激光二极管器件; 配置外部谐振器的衍射光栅将一次或更多次的衍射光返回到锁模激光二极管器件，并将0级衍射光输出到外部; 以及设置在锁模激光二极管器件和衍射光栅之间的成像部分，并且对衍射光栅上的锁模激光二极管器件的光输出端面的图像进行成像。

46. 发明公开

EP2131403A4 P-TYPE GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICONDUCTOR ELEMENT 审中-公开
标题翻译： p型III族氮化物半导体和III族氮化物半导体
公开(公告)号：EP2131403A4
公开(公告)日：2012-08-08
申请号：EP08738700
申请日：2008-03-21
申请人： TOKUYAMA CORP
发明人： KINOSHITA TORU , YANAGI HIROYUKI , TAKADA KAZUYA
IPC分类号： H01L33/00 , H01L21/02 , H01L33/02 , H01S5/323
CPC分类号： H01L33/025 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01S5/3063 , H01S5/3211 , H01S5/32341 , H01S2301/173 , H01S2304/04

47. 发明公开

EP2461436A1 NITRIDE-SEMICONDUCTOR LASER DIODE 有权
标题翻译：氮化物半导体激光二极管
公开(公告)号：EP2461436A1
公开(公告)日：2012-06-06
申请号：EP10804367.0
申请日：2010-07-26
申请人： Nichia Corporation
发明人： MIYOSHI, Takashi
IPC分类号： H01S5/343
CPC分类号： H01S5/3013 , B82Y20/00 , H01S5/0021 , H01S5/22 , H01S5/3063 , H01S5/34 , H01S5/34333
摘要： A nitride semiconductor laser diode includes a substrate, an n-side nitride semiconductor layer formed on the substrate, an active layer formed on the n-side nitride semiconductor layer and having a light emitting layer including In x Al y Ga 1-x-y N (0 6 cm -2 or greater, and the concentration distribution of p-type impuritys in the depth direction is such that, from the light emitting layer toward the surface of the p-side nitride semiconductor layer, the concentration of the p-type impurity reaches a maximum value of 5×10 18 cm -3 or greater within a range of 300 nm from the top portion of the light emitting layer which is closest to the p-side nitride semiconductor layer, and after reaching the maximum value, the concentration remains at 6×10 17 cm -3 or greater in the above-described range of 300 nm.

48. 发明公开

EP2323180A1 NITRIDE SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE SEMICONDUCTOR OPTICAL DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译： OPTICAL氮化物半导体器件，外延晶片FOR OPTICAL氮化物半导体装置及其制造方法的氮化物半导体器件
公开(公告)号：EP2323180A1
公开(公告)日：2011-05-18
申请号：EP09812924.0
申请日：2009-01-22
申请人： Sumitomo Electric Industries, Ltd.
发明人： UENO, Masaki , ENYA, Yohei , KYONO, Takashi , AKITA, Katsushi , YOSHIZUMI, Yusuke , SUMITOMO, Takamichi , NAKAMURA, Takao
IPC分类号： H01L33/00 , H01L21/205 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L33/18 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3407 , H01S2301/173 , H01S2304/04
摘要： In the nitride based semiconductor optical device LEI, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP- with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP- and the gallium nitride based semiconductor layer P.
摘要翻译：在基于氮化物的半导体光学器件LEI，应变阱层21以倾斜角±从飞机确实沿参考平面倾斜SR1延伸垂直于轴线在c轴方向延伸的基准。倾斜角为±在大于59度至小于80度或大于150度到小于180度的范围内。的氮化镓基半导体层，P是相邻于发光层SP具有负的压电场，并具有比势垒层大的带隙。在阱层W3压电电场的方向被定向在从n型层与p型层，并在氮化镓基半导体层P上的压电电场的方向的方向上被引导离开所述p 型层与n型层。因此，价带，而不是导带，具有在所述发光层SP和氮化镓基半导体层P之间的界面浸

49. 发明公开

EP2226910A2 Method of driving a laser diode device and laser diode equipment 审中-公开
标题翻译： Verfahren zur Steuerung einer激光二极管和激光二极管
公开(公告)号：EP2226910A2
公开(公告)日：2010-09-08
申请号：EP10001675.7
申请日：2010-02-18
申请人： Sony Corporation , Tohoku University
发明人： Yokoyama, Hiroyuki , Kono, Shunsuke , Oki, Tomoyuki , Ikeda, Masao
IPC分类号： H01S5/40 , H01S3/10 , H01S5/14 , H01S5/22 , H01S5/323
CPC分类号： H01S5/4006 , B82Y20/00 , H01S5/0428 , H01S5/06216 , H01S5/0658 , H01S5/14 , H01S5/2009 , H01S5/22 , H01S5/3063 , H01S5/3216 , H01S5/34333
摘要： A method of driving an ultrashort pulse and ultrahigh power laser diode device having a simple composition and a simple structure is provided. In the method of driving a laser diode device, light is injected from a light injection means (10) into a laser diode device (20) driven by a pulse current having a value 10 or more times as large as a value of a threshold current.
摘要翻译：提供了一种驱动具有简单组成和简单结构的超短脉冲和超高功率激光二极管器件的方法。在驱动激光二极管器件的方法中，光从光注入装置（10）注入激光二极管装置（20），该激光二极管装置（20）由脉冲电流驱动，其值为阈值电流值的10倍或更多倍。

50. 发明公开

EP2131403A1 P-TYPE GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：磷酸三钠氮磷钾的P-TYP-GRUPPE-III-NITRIDHALBLEITER
公开(公告)号：EP2131403A1
公开(公告)日：2009-12-09
申请号：EP08738700.7
申请日：2008-03-21
申请人： Tokuyama Corporation
发明人： KINOSHITA, Toru , YANAGI, Hiroyuki , TAKADA, Kazuya
IPC分类号： H01L33/00 , H01S5/323
CPC分类号： H01L33/025 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01S5/3063 , H01S5/3211 , H01S5/32341 , H01S2301/173 , H01S2304/04
摘要： This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by Al X Ga Y In Z N in which each of X, Y and Z indicates a rational number satisfying a relationship of X+Y+Z=1.0, even if A1 content is as high as 1.0>X≥0.5. It is achieved that a proportion of a hole concentration at 30°C to an acceptor impurity atom concentration is 0.001 or more in the p-type group III nitride semiconductor of the invention, by doping acceptor impurity atoms such as Mg in concentration of 5×10 18 to 1×10 20 cm -3 using the method, for example, MOCVD with attention not to incorporate an impurity atom other than the acceptor impurity atom or not to form dislocation in the crystal when producing the group III nitride semiconductor expressed by the above composition.
摘要翻译：本发明提供一种p型III族氮化物半导体，具有良好的p型性质，具有由Al X Ga Y In ZN表示的组成，其中X，Y和Z各自表示满足X + Y的关系的有理数 + Z = 1.0，即使A1含量高达1.0> X‰¥0.5。实现本发明的p型III族氮化物半导体中30℃下的受主杂质原子浓度的空穴浓度的比例为0.001以上，通过以5×的浓度掺杂Mg等受主杂质原子 10 18〜1×10 20 cm -3的方法，例如MOCVD，注意不要引入除受体杂质原子以外的杂质原子，或者在制造由III族氮化物半导体表示的III族氮化物半导体时，在晶体中形成位错以上组成。

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