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41. 发明公开

EP1035589A2 Iridium composite barrier structure and method for same 有权
标题翻译：铱 - Verbundsbarrierestruktur und Verfahren zu deren Herstellung
公开(公告)号：EP1035589A2
公开(公告)日：2000-09-13
申请号：EP00301790.2
申请日：2000-03-06
申请人： SHARP KABUSHIKI KAISHA , Sharp Laboratories of America, Inc.
发明人： Zhang, Fengyan , Maa, Jer-Shen , Hsu, Sheng Teng
IPC分类号： H01L29/45 , H01L21/28
CPC分类号： H01L28/75 , H01L21/28291 , H01L28/55 , H01L29/516
摘要： An Ir combination film has been provided that is useful in forming an electrode of a ferroelectric capacitor. The combination film includes tantalum and oxygen, as well as iridium. The Ir combination film effectively prevents oxygen diffusion, and is resistant to high temperature annealing in oxygen environments. When used with an underlying Ta or TaN layer, the resulting conductive barrier also suppresses to diffusion of Ir into any underlying Si substrates. As a result, Ir silicide products are not formed, which degrade the electrode interface characteristics. That is, the Ir combination film remains conductive, not peeling or forming hillocks, during high temperature annealing processes, even in oxygen. A method for forming an Ir composite film barrier layer and Ir composite film ferroelectric electrode are also provided.
摘要翻译：提供了可用于形成铁电电容器的电极的Ir组合膜。组合膜包括钽和氧，以及铱。 Ir组合膜有效防止氧气扩散，耐氧环境中耐高温退火。当与下面的Ta或TaN层一起使用时，所得到的导电屏障还抑制Ir扩散到任何下面的Si衬底中。结果，不形成铱硅化物产物，这降低了电极界面特性。也就是说，即使在氧气中，Ir组合膜在高温退火过程中也保持导电性，不会剥离或形成小丘。还提供了形成Ir复合膜阻挡层和Ir复合膜铁电电极的方法。

42. 发明公开

EP1035588A2 Iridium conductive electrode/barrier structure and method for same 有权
标题翻译：用于制备由铱和阻挡结构和方法的导电电极
公开(公告)号：EP1035588A2
公开(公告)日：2000-09-13
申请号：EP00301789.4
申请日：2000-03-06
申请人： SHARP KABUSHIKI KAISHA , Sharp Laboratories of America, Inc.
发明人： Zhang, Fengyan , Maa, Jer-Shen , Hsu, Sheng Teng
IPC分类号： H01L29/45 , H01L21/28
CPC分类号： H01L29/456 , H01L21/28291 , H01L28/55 , H01L28/65
摘要： A conductive barrier, useful as a ferroelectric capacitor electrode, having high temperature stability has been provided. This conductive barrier permits the use of iridium (Ir) metal in IC processes involving annealing. Separating silicon substrate from Ir film with an intervening, adjacent, tantalum (Ta) film has been found to very effective in suppressing diffusion between layers. The Ir prevents the interdiffusion of oxygen into the silicon during annealing. A Ta or TaN layer prevents the diffusion of Ir into the silicon. This Ir/TaN structure protects the silicon interface so that adhesion, conductance, hillock, and peeling problems are minimized. The use of Ti overlying the Ir/TaN structure also helps prevent hillock formation during annealing. A method of forming a multilayer Ir conductive structure and Ir ferroelectric electrode are also provided.

43. 发明公开

EP0954019A2 Method for fabricating ferroelectric integrated circuits including a hydrogen heating step 审中-公开
标题翻译：一种制备的铁电集成电路的用氢退火步骤过程
公开(公告)号：EP0954019A2
公开(公告)日：1999-11-03
申请号：EP99102688.1
申请日：1999-02-12
申请人： SYMETRIX CORPORATION , NEC Corporation
发明人： Cuchiaro, Joseph D. , Furuya, Akira , Paz de Araujo , Miyasaki, Yoichi
IPC分类号： H01L21/324 , H01L21/316 , H01L27/115 , H01L21/8247 , G11C11/22
CPC分类号： H01L27/11502 , G11C11/22 , H01L21/28291 , H01L21/31691 , H01L21/324 , H01L27/11507 , H01L28/55 , H01L28/56
摘要： An integrated circuit is formed that contains a ferroelectric element (122) comprising metal oxide material containing at least two metals. Various methods and structures are applied to minimize the degradation of ferroelectric properties caused by hydrogen during fabrication of the circuit. Oxygen is added to some elements of the integrated circuit to serve as a getter of hydrogen during fabrication steps. To minimize hydrogen degradation, the ferroelectric compound can be fabricated from a liquid precursor containing one or more of the constituent metals in excess of the amount corresponding to a stoichiometrically balanced concentration. A hydrogen barrier layer (126), preferably comprising titanium nitride, is formed to cover the top of the ferroelectric element (122). A hydrogen heat treatment in hydrogen gas is performed on the integrated circuit at a temperature from 200° to 350°C and for a time period not exceeding 30 minutes to minimize degradation of the ferroelectric properties by hydrogen while restoring other properties of the integrated circuit. An oxygen recovery anneal at 800°C after high-energy hydrogen steps restores ferroelectric properties.
摘要翻译：一种集成电路形成确实包含一个铁电元件（122）包括含有至少两种金属的金属氧化物材料。各种方法和结构被施加到电路的制造过程中由氢引起的铁电特性的退化最小化。氧气被添加到集成电路的一些元件以用作氢的过程中制造步骤的吸气剂。为了最小化氢退化，铁电化合物可以从液体前体含有过量的化学计量量对应于一个平衡浓度组成金属的一个或多个来制造。氢阻挡层（126），优选地包括氮化钛，形成为覆盖铁电元件（122）的顶部。氢气中的氢热处理的温度下进行所述集成电路上从200℃至350℃并保持一定时间周期不超过30分钟的氢，同时恢复该集成电路的其它特性，以最小化铁电特性的退化。高能量的氢步骤后，在800℃的氧复原退火恢复铁电特性。

44. 发明公开

EP0869557A3 Ferroelectric memory cell and method of making the same 失效
标题翻译：一种铁电存储器单元及其制造方法
公开(公告)号：EP0869557A3
公开(公告)日：1999-01-07
申请号：EP98301688.2
申请日：1998-03-06
申请人： Sharp Kabushiki Kaisha , SHARP MICROELECTRONICS TECHNOLOGY, INC.
发明人： Hsu, Sheng Teng , Lee, Jong Jan , Peng, Chien-Hsiung
IPC分类号： H01L29/51 , H01L27/115 , H01L21/8247
CPC分类号： H01L27/11502 , G11C11/22 , G11C11/223 , H01L21/28291 , H01L21/84 , H01L27/11585 , H01L27/1159 , H01L29/78391
摘要： A method of forming a semi-conductor structure forming, on a prepared substrate, a ferroelecuic memory (FEM) gate unit. A gate junction region is formed between the source junction region and the drain junction region for the FEM gate unit on a FEM gate unit device area, which FEM gate unit includes a lower metal layer, a ferroelectric (FE) layer, and an upper metal layer, and which is formed on a conductive channel precursor. The structure of the semiconductor includes a substrate, which may be either bulk silicon or SOI-type silicon, conductive channels of first and second type formed above the substrate, an FEM gate unit formed above a channel region, wherein the FEM gate unit includes a lower metal layer, an FE layer, and an upper metal layer, and wherein a conductive channel of a second type is formed under the FEM gate unit.

45. 发明公开

EP0797244A2 Thin ferroelectric film element and method for manufacturing the same 失效
标题翻译： FerroelektrischesDünnschichtelement和Verfahren zu seiner Herstellung
公开(公告)号：EP0797244A2
公开(公告)日：1997-09-24
申请号：EP97301838.5
申请日：1997-03-19
申请人： SHARP KABUSHIKI KAISHA
发明人： Yokoyama, Seiichi , Ito, Yasuyuki , Ushikubo, Maho , Koba, Masayoshi
IPC分类号： H01L21/3205
CPC分类号： H01L27/11502 , H01L21/28291 , H01L21/31691 , H01L27/11507 , H01L28/56 , H01L29/78391
摘要： A thin ferroelectric film element comprises upper and lower thin electrode films and a thin ferroelectric film formed on a substrate, wherein the thin ferroelectric film comprises at least three layers in which at least one layer has a composition of constituent elements different from those of the other layers and a resistivity higher than that of the other layers, and at least two layers of the others are the same composition of constituent element.
摘要翻译：薄铁电薄膜元件包括上下薄电极膜和形成在基板上的薄铁电体膜，其中薄铁电体膜包括至少三层，其中至少一层具有与其它层不同的组成元素的组成层和电阻率高于其它层的电阻率，并且其它层的至少两层是组成元素的相同组成。

46. 发明公开

EP2752880A3 Graphene electronic devices and methods of manufacturing the same 审中-实审
标题翻译：石墨烯电子器件及其制造方法
公开(公告)号：EP2752880A3
公开(公告)日：2017-10-18
申请号：EP14150063.7
申请日：2014-01-02
申请人： Samsung Electronics Co., Ltd.
发明人： Kim, Yong-sung , Lee, Chang-seung , Lee, Joo-ho
IPC分类号： H01L29/778 , H01L21/336 , H01L29/78 , H01L29/788 , H01L29/16 , H01L21/28 , H01L29/423 , H01L27/115 , H01L29/417 , H01L21/683
CPC分类号： H01L29/66477 , B82Y10/00 , H01L21/28273 , H01L21/28291 , H01L21/6835 , H01L27/11521 , H01L27/1159 , H01L29/1606 , H01L29/41775 , H01L29/42328 , H01L29/66045 , H01L29/778 , H01L29/78391 , H01L29/7881 , H01L2221/68359 , H01L2221/68381
摘要： A graphene electronic device includes: a first conductive layer (12) and a semiconductor layer (13) on a first region of an intermediate layer (11); a second conductive layer (14) on a second region of the intermediate layer; a graphene layer (15) on the intermediate layer, the semiconductor layer, and the second conductive layer; and a first gate structure (17) and a second gate structure (18) on the graphene layer.
摘要翻译：一种石墨烯电子器件，包括：中间层（11）的第一区域上的第一导电层（12）和半导体层（13）;第二导电层在中间层的第二区域上的第二导电层（14）所述中间层，所述半导体层和所述第二导电层上的石墨烯层（15）以及石墨烯层上的第一栅极结构（17）和第二栅极结构（18）。

47. 发明公开

EP2752880A2 Graphene electronic devices and methods of manufacturing the same 审中-实审
标题翻译： Graphenelektronikvorrichtungen und Verfahren zur Herstellung davon
公开(公告)号：EP2752880A2
公开(公告)日：2014-07-09
申请号：EP14150063.7
申请日：2014-01-02
申请人： Samsung Electronics Co., Ltd
发明人： Kim, Yong-sung , Lee, Chang-seung , Lee, Joo-ho
IPC分类号： H01L29/778 , H01L21/336 , H01L29/78 , H01L29/788 , H01L29/16 , H01L21/28 , H01L29/423 , H01L27/115
CPC分类号： H01L29/66477 , B82Y10/00 , H01L21/28273 , H01L21/28291 , H01L21/6835 , H01L27/11521 , H01L27/1159 , H01L29/1606 , H01L29/41775 , H01L29/42328 , H01L29/66045 , H01L29/778 , H01L29/78391 , H01L29/7881 , H01L2221/68359 , H01L2221/68381
摘要： A graphene electronic device includes: a first conductive layer (12) and a semiconductor layer (13) on a first region of an intermediate layer (11); a second conductive layer (14) on a second region of the intermediate layer; a graphene layer (15) on the intermediate layer, the semiconductor layer, and the second conductive layer; and a first gate structure (17) and a second gate structure (18) on the graphene layer.
摘要翻译：石墨烯电子器件包括：在中间层（11）的第一区域上的第一导电层（12）和半导体层（13）; 在所述中间层的第二区域上的第二导电层（14）; 中间层上的石墨烯层（15），半导体层和第二导电层; 以及石墨烯层上的第一栅极结构（17）和第二栅极结构（18）。

48. 发明公开

EP2166571A4 MEMORY DEVICE AND ITS READING METHOD 有权
标题翻译： SPEICHERANORDNUNG UND LESEVERFAHRENDAFÜR
公开(公告)号：EP2166571A4
公开(公告)日：2010-09-29
申请号：EP08764638
申请日：2008-05-23
申请人： NAT INST OF ADVANCED IND SCIEN
发明人： HAYASHI YUTAKA , MATSUMOTO KAZUHIKO , KAMIMURA TAKAFUMI
IPC分类号： H01L29/06 , H01L21/28 , H01L21/336 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7881 , B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L21/28291 , H01L29/0657 , H01L29/1606 , H01L29/42336 , H01L29/42352 , H01L29/66825 , H01L29/66833 , H01L29/6684 , H01L29/7781 , H01L29/792

49. 发明公开

EP1879928A4 A METHOD FOR FORMING FERROELECTRIC THIN FILMS, THE USE OF THE METHOD AND A MEMORY WITH A FERROELECTRIC OLIGOMER MEMORY MATERIAL 审中-公开
标题翻译：方法教育FERRO电薄膜，使用具有FERRO电动低聚存储材料的程序记忆
公开(公告)号：EP1879928A4
公开(公告)日：2009-12-02
申请号：EP06747629
申请日：2006-05-02
申请人： THIN FILM ELECTRONICS ASA
发明人： JOHANSSON NICKLAS , XU HAISHENG , LEISTAD GEIRR I
IPC分类号： C08F14/22 , B05D7/24 , B29C20060101 , C08F214/22 , C23C14/12 , H01L21/28 , H01L21/312
CPC分类号： C23C14/12 , B05D1/60 , B05D2506/10 , C08F214/22 , H01L21/0212 , H01L21/02269 , H01L21/02356 , H01L21/28291 , H01L21/3127 , H01L27/285

50. 发明公开

EP0954019A3 Method for fabricating ferroelectric integrated circuits including a hydrogen heating step 审中-公开
标题翻译：一种制备的铁电集成电路的用氢退火步骤过程
公开(公告)号：EP0954019A3
公开(公告)日：2009-07-01
申请号：EP99102688.1
申请日：1999-02-12
申请人： SYMETRIX CORPORATION , NEC CORPORATION
发明人： Cuchiaro, Joseph D. , Furuya, Akira , Paz de Araujo , Miyasaki, Yoichi
IPC分类号： H01L21/324 , H01L21/316 , H01L27/115 , H01L21/8247 , G11C11/22 , H01L21/02 , H01L21/314
CPC分类号： H01L27/11502 , G11C11/22 , H01L21/28291 , H01L21/31691 , H01L21/324 , H01L27/11507 , H01L28/55 , H01L28/56
摘要： An integrated circuit is formed that contains a ferroelectric element (122) comprising metal oxide material containing at least two metals. Various methods and structures are applied to minimize the degradation of ferroelectric properties caused by hydrogen during fabrication of the circuit. Oxygen is added to some elements of the integrated circuit to serve as a getter of hydrogen during fabrication steps. To minimize hydrogen degradation, the ferroelectric compound can be fabricated from a liquid precursor containing one or more of the constituent metals in excess of the amount corresponding to a stoichiometrically balanced concentration. A hydrogen barrier layer (126), preferably comprising titanium nitride, is formed to cover the top of the ferroelectric element (122). A hydrogen heat treatment in hydrogen gas is performed on the integrated circuit at a temperature from 200° to 350°C and for a time period not exceeding 30 minutes to minimize degradation of the ferroelectric properties by hydrogen while restoring other properties of the integrated circuit. An oxygen recovery anneal at 800°C after high-energy hydrogen steps restores ferroelectric properties.

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