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41. 发明公开

EP0852374A3 Method and system for speaker-independent recognition of user-defined phrases 失效
标题翻译：方法和系统用户自定义短语的扬声器无关的识别
公开(公告)号：EP0852374A3
公开(公告)日：1998-11-18
申请号：EP98300011.8
申请日：1998-01-02
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Ramalingam, Coimbatore S.
IPC分类号： G10L5/06
CPC分类号： G10L15/08 , G10L15/063 , G10L15/19 , G10L15/197
摘要： Method and system of determining an out-of-vocabulary score for speaker-independent recognition of user-defined phrases comprises enrolling a user-defined phrase (38) with a set of speaker-independent (SI) recognition models (34) using an enrollment grammar (36). An enrollment grammar score of the spoken phrase may be determined (92) by comparing features of the spoken phrase to the SI recognition models (34) using the enrollment grammar (36). The enrollment grammar score may be penalized to generate an out-of-vocabulary score (94).

42. 发明公开

EP0831521A3 Method for forming a silicide region 失效
标题翻译：形成硅化物区域的方法
公开(公告)号：EP0831521A3
公开(公告)日：1998-09-16
申请号：EP97307246.5
申请日：1997-09-18
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Mizobuchi, Koichi , Fukuda, Yukio
IPC分类号： H01L21/285
CPC分类号： C23C14/5806 , C23C14/18 , C23C16/345 , C23C16/401 , H01L21/28518 , H01L29/7842
摘要： A method of forming a silicide layer 12 is disclosed herein. A siliciding metal layer 20 is formed over a silicon layer 10. These layers are then heated to a first temperature to form a silicide layer 12. This silicide layer 12 can be substantially of a first phase (e.g., C49, TiSi 2 ). The silicide layer 12 an then be heated while applying a stress to form a silicide layer 12, possibly substantially of a second phase (e.g., C54, TiSi 2 ). In the preferred embodiment, the stress is applied by depositing a cap layer 14.
摘要翻译：本文公开了形成硅化物层12的方法。在硅层10上形成硅化金属层20.然后将这些层加热到第一温度以形成硅化物层12.该硅化物层12可以基本上是第一相（例如C49，TiSi2）。然后在施加应力的同时加热硅化物层12以形成硅化物层12，可能基本上是第二相（例如C54，TiSi2）。在优选实施例中，通过沉积盖层14来施加应力。

43. 发明公开

EP0828287A3 Improvements in or relating to semiconductors 失效
标题翻译：半导体或与半导体有关的改进
公开(公告)号：EP0828287A3
公开(公告)日：1998-09-02
申请号：EP97305923.1
申请日：1997-08-05
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Wilk, Glenn D. , Wallace, Robert M. , Wei, Yi, Motorola Flat Panel Display Division
IPC分类号： H01L21/20 , H01L21/306
CPC分类号： H01L21/02043 , H01L21/02046 , H01L21/02238 , H01L21/02255 , H01L21/02301 , H01L21/02312 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/31662 , Y10S438/974
摘要： A method of preparing a surface for and forming a thin film on a single-crystal silicon substrate is disclosed. One embodiment of his method comprises forming an oxidized silicon layer (which may be a native oxide) on at least one region of the substrate, and thermally annealing the substrate in a vacuum while supplying a silicon-containing flux to the oxide surface, thus removing the oxidized silicon layer. Preferably, the thin film is formed immediately after removal of the oxidized silicon layer. The silicon-containing flux is preferably insufficient to deposit a silicon-containing layer on top of the oxidized silicon layer, and yet sufficient to substantially inhibit an SiO-forming reaction between the silicon substrate and the oxidized silicon layer. The method of the invention allows for growth or deposition of films which have exceptionally smooth interfaces (less than 0.1 nm rms roughness) with the underlying silicon substrate at temperatures less than 800°C, and is ideally suited for deposition of ultrathin films having thicknesses less than about 5 nm.
摘要翻译：公开了一种在单晶硅衬底上制备用于形成薄膜的表面的方法。他的方法的一个实施例包括在衬底的至少一个区域上形成氧化硅层（其可以是自然氧化物），并且在真空中对衬底进行热退火，同时向氧化物表面供应含硅的焊剂，从而去除氧化的硅层。优选地，在去除氧化硅层之后立即形成薄膜。含硅助熔剂优选不足以在氧化硅层上沉积含硅层，并且足以基本上抑制硅衬底和氧化硅层之间的SiO-形成反应。本发明的方法允许在低于800℃的温度下与下面的硅衬底具有特别光滑的界面（小于0.1nm均方根粗糙度）的膜的生长或沉积，并且理想地适用于沉积厚度较小的超薄膜大约5nm。

44. 发明公开

EP0849377A3 Etching titanium nitride in a plasma containing oxygen and flourine 失效
标题翻译：在含氧和氟的等离子体中蚀刻氮化钛
公开(公告)号：EP0849377A3
公开(公告)日：1998-08-05
申请号：EP97310333.6
申请日：1997-12-19
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Rotondaro, Antonio L. P.
IPC分类号： C23G5/00 , C23F4/00 , H01L21/321
CPC分类号： H01L21/31122 , C23G5/00 , H01L21/32136
摘要： A dry etch method for removing TixNy films by using a remote plasma to excite a oxygen+fluorine source gas mixture, generating active species that etch TixNy with minimum attack to other materials. In particular, an isotropic dry etch can be used for the selective removal of TiN in W/TiN gate structures without gate oxide damage. This etch also permits selective stripping of titanium nitride in a salicidation process.
摘要翻译：通过使用远程等离子体激发氧+氟源气体混合物来去除TixNy膜的干法蚀刻方法，产生活性物质，其在对其他材料侵蚀最小的情况下蚀刻TixNy。具体而言，可以使用各向同性干法蚀刻来选择性去除W / TiN栅极结构中的TiN，而没有栅极氧化物损伤。该蚀刻还允许在硅化过程中选择性剥离氮化钛。

45. 发明公开

EP0853335A2 Slurry and process for the mechano-chemical polishing of semiconductor devices 失效
标题翻译：悬架与Verfahren zum mechnisch-chemischen Polieren von Halbleiteranordnungen
公开(公告)号：EP0853335A2
公开(公告)日：1998-07-15
申请号：EP98300155.3
申请日：1998-01-09
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Morrison, William Robert , Hunt, Kyle Paul
IPC分类号： H01L21/3105 , C09G1/02
CPC分类号： H01L21/31053 , C09G1/02
摘要： This invention is for an improved slurry for shallow trench isolation processing. The improved slurry has an enhanced oxide to nitride polish removal selectivity. The invention relates to a modified slurry formed by mixing a polishing slurry with tetramethyl ammonium hydroxide and hydrogen peroxide. In an alternative embodiment, the modified slurry is formed by mixing a salt of tetramethyl ammonium with a base and with hydrogen peroxide to form the modified slurry.
摘要翻译：本发明是用于浅沟槽隔离处理的改进的浆料。改进的浆料具有增强的氧化物至氮化物抛光选择性。本发明涉及通过将抛光浆料与四甲基氢氧化铵和过氧化氢混合而形成的改性浆料。在替代实施方案中，改性浆料通过将四甲基铵盐与碱和过氧化氢混合以形成改性浆料而形成。

46. 发明授权

EP0450233B1 Bus access for digital computer system 失效
标题翻译：对于数字计算机系统总线访问
公开(公告)号：EP0450233B1
公开(公告)日：1998-07-15
申请号：EP90313905.3
申请日：1990-12-19
申请人： DELL USA L.P.
发明人： Zeller, Charles P. , Durkin, Michael D. , Holman, Thomas H., Jr.
IPC分类号： G06F13/36
CPC分类号： G06F13/364

47. 发明公开

EP0852361A2 Improvements in or relating to televisions 失效
标题翻译： Fernsehempfänger
公开(公告)号：EP0852361A2
公开(公告)日：1998-07-08
申请号：EP98300017.5
申请日：1998-01-05
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Thrift, Phillip R.
IPC分类号： G06F17/30 , H04N7/173
CPC分类号： H04N21/4431 , H04N21/4316 , H04N21/4381 , H04N21/4437 , H04N21/4622 , H04N21/4782 , H04N21/64322 , H04N21/812 , H04N21/8586
摘要： A Java television receiver (10) includes a Java television platform (12) that has a bidirectional Internet connection (14) capable of sending Internet data to the Java television platform (12) and transmitting data from the Java television platform (12) to an Internet provider. Additionally, a tuner/decoder (24) connected to the Java television platform (12) is provided which can receive, tune and decode television signals. An audio/video overlay (32) connected to the Java television platform is provided to combine displays from the Java television platform (12) and television signals from the tuner/decoder (24). Finally, a video output (36) and an audio output (38) sends the combined Internet data and television signals to a television (40) .
摘要翻译： Java电视接收机（10）包括Java电视平台（12），其具有能够向Java电视平台（12）发送因特网数据并将数据从Java电视平台（12）发送到互联网服务提供商。另外，提供连接到Java电视平台（12）的调谐器/解码器（24），其可以接收，调谐和解码电视信号。提供连接到Java电视平台的音频/视频覆盖（32）以组合来自Java电视平台（12）的显示器和来自调谐器/解码器（24）的电视信号。最后，视频输出（36）和音频输出（38）将组合的因特网数据和电视信号发送到电视机（40）。

48. 发明公开

EP0851474A2 Improvements in or relating to integrated circuits 失效
标题翻译：集成电路或与之相关的改进
公开(公告)号：EP0851474A2
公开(公告)日：1998-07-01
申请号：EP97310064.7
申请日：1997-12-12
申请人： TEXAS INSTRUMENTS INC.
发明人： Wallace, Robert M. , Baber, S. Charles , Chen, Peijun , Henck, Steven A.
IPC分类号： H01L21/321 , H01L21/768
CPC分类号： H01L21/02068 , H01L21/02063 , H01L21/02071 , H01L21/3105 , H01L21/321 , H01L21/32136 , H01L21/76883
摘要： An integrated circuit fabrication process in which residual flourine contamination on metal surfaces after ashing is removed by exposure to an NH 3 /O 2 plasma.
摘要翻译：一种集成电路制造工艺，其中通过暴露于NH3 / O2等离子体来去除灰化后金属表面上残留的氟化物污染物。

49. 发明公开

EP0851472A2 Method for etching oxide during the fabrication of an integrated circuit 失效
标题翻译：氧化物的蚀刻在集成电路的制造中的方法
公开(公告)号：EP0851472A2
公开(公告)日：1998-07-01
申请号：EP97310519.0
申请日：1997-12-23
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Yang, Ming , Li, Lei
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01L21/31138
摘要： The manufacture of ULSI devices such as 256 Megabit DRAMs is significantly improved by adding CO 2 to the oxide etch chemistry of CHF 3 and CF 4 . The carbon dioxide promotes polymerization near the edge of the plasma on large (300mm) wafers during formation of oxide posts 120 that are used in manufacturing DRAMs having storage cells of the "crown" cell type.
摘要翻译： ULSI器件的制造：如256兆级比特的DRAM被显着通过加入CO2来CHF3和CF4的氧化物蚀刻化学提高。二氧化碳形成氧化物柱120并在制造具有“冠”细胞类型的存储单元的DRAM中使用的过程中促进上大（300毫米）晶片附近的等离子体的边缘聚合。

50. 发明公开

EP0837094A2 Basic calcium carboxylates 失效
标题翻译：基础钙羧酸盐
公开(公告)号：EP0837094A2
公开(公告)日：1998-04-22
申请号：EP97122750.9
申请日：1994-03-23
申请人： EXXON CHEMICAL PATENTS INC.
发明人： The designation of the inventor has not yet been filed
IPC分类号： C08K5/098 , C08L27/06
CPC分类号： C10M159/20 , C07C51/414 , C07C53/128 , C07C53/126
摘要： Calcium superbase soaps are used as stabilisers for PVC.
摘要翻译：钙超级肥皂被用作PVC的稳定剂。

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