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31. 发明公开

EP1634328A4 MICROELECTROMECHANICAL SYSTEMS, AND METHODS FOR ENCAPSULATING AND FABRICATING SAME 有权转让
标题翻译：微机电系统和方法使这次和封装
公开(公告)号：EP1634328A4
公开(公告)日：2011-07-06
申请号：EP04785661
申请日：2004-03-30
申请人： BOSCH GMBH ROBERT
发明人： PARTRIDGE AARON , LUTZ MARKUS , KRONMUELLER SILVIA
IPC分类号： B81C1/00 , H01L20060101 , H01L21/44 , H01L23/28 , H01L23/48 , H01L23/52 , H01L27/14 , H01L29/40 , H01L29/82 , H01L29/84
CPC分类号： B81C1/00261 , B81B2207/015 , B81C1/00333 , B81C2201/0176 , B81C2203/0136 , H01L2924/0002 , H01L2924/00

32. 发明公开

EP2267734A1 HALF-METALLIC ANTIFERROMAGNETIC MATERIAL 审中-公开
标题翻译：抗血栓形成药物
公开(公告)号：EP2267734A1
公开(公告)日：2010-12-29
申请号：EP09721940.6
申请日：2009-03-18
申请人： Osaka University
发明人： AKAI, Hisazumi , OGURA, Masako , NGUYEN, Long Hoang
IPC分类号： H01F1/40 , H01L29/82
CPC分类号： H01F1/408 , H01F1/0009
摘要： A half-metallic antiferromagnetic material that is chemically stable and has a stable magnetic structure is provided.
A half-metallic antiferromagnetic material according to the present invention is a compound that has a crystal structure of a nickel arsenic type, a zinc blende type, a wurtzite type, a chalcopyrite type or a rock salt type and is constituted of two or more magnetic elements and a chalocogen or a pnictogen. The two or more magnetic elements contain a magnetic element having fewer than 5 effective d electrons and a magnetic element having more than 5 effective d electrons, and a total number of effective d electrons of the two or more magnetic elements is 10 or a value close to 10.
摘要翻译：提供化学稳定且具有稳定磁性结构的半金属反铁磁性材料。根据本发明的半金属反铁磁材料是具有镍砷型，闪锌矿型，纤锌矿型，黄铜矿型或岩盐型的晶体结构的化合物，并且由两种或更多种磁性元素和致汗细胞或pnictogen。两个或多个磁性元件包含具有少于5个有效d电子的磁性元件和具有多于5个有效d电子的磁性元件，并且两个或更多个磁性元件的有效d电子的总数为10或接近到10。

33. 发明公开

EP2234269A1 SPIN-VALVE ELEMENT DRIVING METHOD, AND SPIN-VALVE ELEMENT 有权
标题翻译：自旋阀元件驱动方法和自旋阀元件
公开(公告)号：EP2234269A1
公开(公告)日：2010-09-29
申请号：EP08863154.4
申请日：2008-08-28
申请人： FUJI ELECTRIC HOLDINGS CO., LTD.;
发明人： KAWAKAMI, Haruo , OGIMOTO, Yasushi
IPC分类号： H03B15/00 , H01L43/08 , H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01F10/329 , H03B15/006
摘要： In a spin valve element driving method and a spin valve element, employing such a method, for causing microwave oscillation in a spin valve element, which is driven while applying thereto a weak external magnetic field or without using a magnetic field at all, an electromagnetic signal is obtained from a spin valve element, in which the coercivities in each of the layers of a pair of ferromagnetic layers being different from each other. A fixed layer, which is the ferromagnetic layer having a high coercivity among the pair of ferromagnetic layers, is magnetized in a direction substantially perpendicular to the film plane of the fixed layer, and a current is passed from one of the pair of ferromagnetic layers to the other through an intermediate layer. Upon driving, the set of values comprising the value of the magnitude of an external magnetic field and the value of the current passed in the spin valve element satisfy a prescribed condition. Or, the physical properties of the free layer, which is the ferromagnetic layer having a lower coercivity among the pair of ferromagnetic layers, can be realized under such a condition.
摘要翻译：在采用这种方法的自旋阀元件驱动方法和自旋阀元件中，为了在向其施加弱外部磁场或根本不使用磁场的情况下驱动的自旋阀元件中引起微波振荡，信号从自旋阀元件获得，其中一对铁磁层的每层中的矫顽力彼此不同。在一对铁磁层中，作为具有高矫顽力的铁磁层的固定层在与固定层的膜平面大致垂直的方向上被磁化，并且电流从一对铁磁层中的一个传递到另一个通过中间层。在驱动时，包括外部磁场的大小的值和在自旋阀元件中流过的电流的值的一组值满足规定的条件。或者，可以在这样的条件下实现作为一对铁磁层中的具有较低矫顽力的铁磁层的自由层的物理性质。

34. 发明授权

EP1374314B1 INTEGRATED TOROIDAL COIL INDUCTORS FOR IC DEVICES AND MANUFACTURING METHOD 有权
标题翻译：综合TOROIDSPULENINDUKTOREN集成电路器件和方法
公开(公告)号：EP1374314B1
公开(公告)日：2010-08-18
申请号：EP02725187.5
申请日：2002-03-13
申请人： International Business Machines Corporation
发明人： ACOSTA, Raul, E. , CARASSO, Melanie, L. , CORDES, Steven, A. , GROVES, Robert, A. , LUND, Jennifer, L. , ROSNER, Joanna
IPC分类号： H01L29/82 , H01L29/00
CPC分类号： H01L28/10 , H01F17/0006 , H01F17/0033 , H01F41/041 , H01L27/08
摘要： A means for fabrication of solenoidal inductors interated in a semiconductor chip is provided. A solenoidal coil (50) is partially embedded in a deep well etched into the chip substrate (10). The non-embedded part (30) of the coil is fabricated as part of BEOL metallization layers (52). This allows for large cross-sectional area of the solenoid turns, tus reducing the turn-to-turn capacitive coupling. Because the solenoidal coils of this invention have a large diameter cross-section, the coil can be made with a large inductance value and yet occupy a small area of the chip. The farbication process includes etching of a deep cavity in the substrate after all the FEOL steps are completed; lining said cavity with a dielectric (14) followed by fabrication of the part of the coil (22) that will be embedded by deposition of a conductive material metal through a mask; deposition of dielectric (24 and 28) and planarization of the same by CMP. After planarization the fabrication of the remaining part (30) of the solenoidal coil is fabricated as part of the metallization in the BEOL (i.e. as line/vias of the BEOL). To further increase the cross section of the solenoidal coil, part of it may be built by electrodeposition through a mask on top of the BEOL layers.

35. 发明公开

EP2204852A1 SPIN-VALVE ELEMENT AND ITS MANUFACTURING METHOD 审中-公开
标题翻译： VERFAHREN ZU SEINER HERSTELLUNG的旋转通风系统
公开(公告)号：EP2204852A1
公开(公告)日：2010-07-07
申请号：EP08841627.6
申请日：2008-08-28
申请人： FUJI ELECTRIC HOLDINGS CO., LTD.;
发明人： The designation of the inventor has not yet been filed
IPC分类号： H01L29/82 , H01L43/08 , H01L43/12 , H03B15/00
CPC分类号： H01F10/324 , B82Y25/00 , B82Y40/00 , H01F10/325 , H01F10/3254 , H01F41/302 , H01L43/08 , H01L43/12 , H01P5/02 , H03B15/006 , Y10T428/1171
摘要： A spin valve element is obtained in which, in order to achieve impedance matching of a spin valve element which undergoes high-frequency oscillation, parallel or series magnetic element groups, including a plurality of magnetic elements in which an intermediate layer of an insulating member or a nonmagnetic member is sandwiched by a pair of ferromagnetic layers, are further connected either in series or in parallel, and by using magnetic element groups connected in combination either in parallel or in series, the impedance of the spin valve element can be matched to a desired value, and moreover a porous film can be used to fabricate a spin valve element, so that sophisticated lithography methods need not be used, and a single-domain structure can be realized for individual magnetic elements.
摘要翻译：获得自旋阀元件，其中为了实现经受高频振荡的自旋阀元件的阻抗匹配，平行或串联的磁性元件组，包括多个磁性元件，其中绝缘构件的中间层或非磁性构件被一对铁磁层夹在一起，进一步串联或并联连接，并且通过使用并联或串联组合的磁性元件组，自旋阀元件的阻抗可匹配于期望值，此外，多孔膜可用于制造自旋阀元件，从而不需要使用复杂的光刻方法，并且可以为单个磁性元件实现单畴结构。

36. 发明公开

EP1528037A4 MICROMACHINE AND PRODUCTION METHOD THEREFOR 审中-公开
标题翻译：微型机械及其制造方法
公开(公告)号：EP1528037A4
公开(公告)日：2007-09-12
申请号：EP03784618
申请日：2003-08-08
申请人： SONY CORP
发明人： TADA MASAHIRO , KINOSHITA TAKASHI , TANIGUCHI TAKESHI , IKEDA KOICHI
IPC分类号： B81B3/00 , B81C1/00 , H01L21/302 , H01L27/14 , H01L29/82 , H01L29/84 , H03H3/007 , H03H9/24 , H03H9/46 , H03J5/00
CPC分类号： H03H3/0076 , H03H9/2463 , H03H9/462 , H03H2009/02511
摘要： A micromachine for use in a high-frequency filter having a high Q value and a higher frequency band. A micromachine (20) characterized by comprising an output electrode (7) provided on a substrate (1), an interlayer insulation film consisting of a first insulation film (9) and a second insulation film (11) provided on the substrate so as to cover the output electrode (7), a hole pattern (11a) provided in the second insulation film (11) so as to reach the output electrode (7), and a band-form vibrator electrode (15) provided on the second insulation film (11) so as to cross the upper part of the hole pattern with the interior of the hole pattern (11a) formed as a hollow (A).

37. 发明公开

EP1618599A2 METHOD OF MAKING A NANOGAP FOR VARIABLE CAPACITIVE ELEMENTS AND DEVICE HAVING A NANOGAP 失效
标题翻译：一种用于生产纳米缺口可变电容元件
公开(公告)号：EP1618599A2
公开(公告)日：2006-01-25
申请号：EP04759726.5
申请日：2004-03-22
申请人： ROBERT BOSCH GMBH , THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY
发明人： PARTRIDGE, Aaron , LUTZ, Markus , KENNY, Thomas
IPC分类号： H01L21/00 , H01L29/82 , H01L29/84
CPC分类号： B81C1/00063 , B81B2201/0271 , H01G5/16
摘要： A method for fabricating a variable capacitive device including providing a base silicon-bearing compound electrode (107a-107c) which is vertically-inclined with respect to a substrate, depositing a sacrificial layer on the base electrode, depositing a silicon-bearing compound electrode (116a-117d) on the sacrificial layer which is also vertically-inclined with respect to the substrate, and removing the sacrificial layer from between the base silicon-bearing compound electrode (107a-107c) and the grown silicon-bearing compound electrode.(116a-116d) A variable capacitive device having a fixed vertically-inclined silicon-bearing compound electrode and a movable vertically-inclined silicon-bearing compound electrode produced by arranging a sacrificial layer on a base silicon-bearing compound electrode, depositing a grown silicon-bearing compound electrode on the sacrificial layer, and etching the sacrificial layer. Between the fixed silicon-bearing compound and the movable silicon-bearing compound electrode is a nanogap (120a-120d), the nanogap having a uniform width.

38. 发明公开

EP1489660A4 MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：磁存储设备及其制造方法
公开(公告)号：EP1489660A4
公开(公告)日：2005-09-28
申请号：EP03715413
申请日：2003-03-26
申请人： SONY CORP
发明人： MOTOYOSHI MAKOTO , IKARASHI MINORU
IPC分类号： G11C11/15 , G11C11/16 , H01F10/16 , H01F10/30 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L29/68 , H01L29/82 , H01L43/08
CPC分类号： G11C11/16 , H01L27/224 , H01L27/228 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： A magnetic memory device capable of improving write characteristic by providing a magnetic flux concentrator which can apply a current magnetic field generated by a write word line effectively to the storage layer of a TMR element. The magnetic memory device (1) includes the TMR element (13), a write word line (first wire) (11) electrically insulated from the TMR element (13), and a bit line (second wire) (12) to be electrically connected to the TMR element (13) and three-dimensionally intersecting the write word line (11) via the TMR element (13). The device further includes a magnetic flux concentrator (51) composed of a highly permeable layer arranged on both sides of the write word line (11) and along the surface of the write word line (11) opposite to the surface opposing to the TMR element (13). At least one of the side walls of the magnetic flux concentrator (51) is formed to protrude toward the TMR element (13) side from the write word line (11).

39. 发明公开

EP1532658A1 CONDUCTIVE ETCH STOP FOR ETCHING A SACRIFICIAL LAYER 审中-公开
标题翻译： CONDUCTING蚀刻掩模用于蚀刻的受害者LAYER
公开(公告)号：EP1532658A1
公开(公告)日：2005-05-25
申请号：EP03734278.9
申请日：2003-05-30
申请人： Silicon Light Machines Corporation
发明人： HUNTER, James, A.
IPC分类号： H01L21/00 , H01L27/14 , H01L29/82 , H01L29/84
CPC分类号： G02B26/0833 , B81B2201/045 , B81C1/00531 , B81C2201/0132 , G02B26/0841
摘要： In one embodiment, a micro device is formed by depositing a sacrificial layer over a metallic electrode (step 304), forming a moveable structure over the sacrificial layer (step 306), and then etching the sacrificial layer with a noble gas fluoride (step 308). Because the metallic electrode is comprised of a metallic material that also serves as an etch stop in the sacrificial layer etch, charge does not appreciably build up in the metallic electrode. This helps stabilize the driving characteristic of the moveable structure. In one embodiment, the moveable structure is a ribbon in a light modulator.

40. 发明公开

EP1423861A1 MAGNETORESISTIVE DEVICE AND ELECTRONIC DEVICE 审中-公开
标题翻译：磁阻安排和电子设备
公开(公告)号：EP1423861A1
公开(公告)日：2004-06-02
申请号：EP02755560.6
申请日：2002-08-21
申请人： Koninklijke Philips Electronics N.V.
发明人： GIEBELER, Carsten , LENSSEN, Kars-Michiel, H. , ZILKER, Stephan, J. , COEHOORN, Reinder
IPC分类号： H01F10/32 , G11C11/16 , H01L29/82
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996 , G11C11/15 , G11C11/16 , G11C13/0014 , G11C13/025 , H01F10/32 , H01F10/3254 , H01L29/82 , H01L43/08 , H01L43/10
摘要： A magnetoresistive device (11) having a lateral structure and provided with a non-magnetic spacer layer (3) of organic semiconductor material allows the presence of an additional electrode (19). With this electrode (19), a switch-function is integrated into the device (11). Preferably, electrically conductive layers (13,23) are present for the protection of the ferromagnetic layers (1,2). The magnetoresistive device (11) is suitable for integration into an array so as to act as an MRAM device.

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