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31. 发明公开

EP1665278A2 NANOTUBE-BASED SWITCHING ELEMENTS WITH MULTIPLE CONTROLS AND CIRCUITS MADE FROM SAME 审中-公开
标题翻译：与多个控件碳纳米管BASED电路组件及由其制造的CIRCUITS
公开(公告)号：EP1665278A2
公开(公告)日：2006-06-07
申请号：EP04809611.9
申请日：2004-08-12
申请人： Nantero, Inc.
发明人： BERTIN, Claude, L. , RUECKES, Thomas , SEGAL, Brent, M.
IPC分类号： G11C11/00 , G11C11/50 , G11C11/21 , G11C23/00 , H01L29/772 , B82B1/00 , B81B3/00
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/708 , Y10S977/932 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior depending on the construction.

32. 发明公开

EP1658646A2 VERBINDUNG MIT MINDESTENS EINER SPEICHEREINHEIT AUS ORGANISCHEM SPEICHERMATERIAL, INSBESONDERE ZUR VERWENDUNG IN CMOS-STRUKTUREN, HALBLEITERBAUELEMENT UND EIN VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTES 审中-公开
标题翻译：与至少一个储存单元有机记忆材料，尤其是FOR USE IN CMOS结构，半导体元件和方法连接对于的半导体元件
公开(公告)号：EP1658646A2
公开(公告)日：2006-05-24
申请号：EP04786208.1
申请日：2004-08-27
申请人： Infineon Technologies AG
发明人： HALIK, Marcus , KLAUK, Hagen , SCHMID, Günter , ZSCHIESCHANG, Ute
IPC分类号： H01L51/00
CPC分类号： H01L51/0591 , B82Y10/00 , G11C13/0014 , H01L27/28 , H01L51/0012 , H01L51/0094 , H01L51/0595
摘要： The invention relates to a compound comprising at least one memory unit consisting of an organic memory material, especially for using in CMOS structures, said compound being characterised by a) at least one first anchor group (1) provided with a reactive group for covalently bonding to a first electrode (10), especially a bottom electrode of a memory cell (102), and b) at least one second anchor group (2) provided with a reactive group for bonding to a second electrode (20), especially a top electrode of a memory cell (102). The invention also relates to a semiconductor component, and to a method for producing a semiconductor component. The invention thus provides a compound, a semiconductor component, and a method for producing the semiconductor component, by which means molecular memory layers can be efficiently formed on conventional substrates.

33. 发明公开

EP1642338A1 LOGIKGATTER MIT POTENTIALFREIER GATE-ELEKTRODE FÜR ORGANISCHE INTEGRIERTE SCHALTUNGEN 审中-公开
标题翻译：用没有电势栅电极达有机集成电路逻辑门
公开(公告)号：EP1642338A1
公开(公告)日：2006-04-05
申请号：EP04738822.8
申请日：2004-06-30
申请人： Polyic GmbH & Co. Kg
发明人： GLAUERT, Wolfram , FIX, Walter , ULLMANN, Andreas
IPC分类号： H01L27/00 , H03K19/08 , H03K19/094 , H03K19/02
CPC分类号： H03K19/094 , H01L27/28
摘要： The invention relates to an organic logic gate comprising at least one charging field effect transistor (charging FET) and at least one switching field effect transistor (switching FET), said charging FET comprising at least one gate electrode, a source electrode and a drain electrode, the gate electrode of the charging FET being potential-free.

34. 发明公开

EP1465201A3 Producing conductive layers 审中-公开
标题翻译：导电层的制备
公开(公告)号：EP1465201A3
公开(公告)日：2006-01-04
申请号：EP04251119.6
申请日：2004-02-27
申请人： Hewlett-Packard Development Company, L.P.
发明人： Beck, Patricia A. , Ohlberg, Douglas , Stewart, Duncan , Li, Zhiyong
IPC分类号： G11C13/02
CPC分类号： H01L27/28 , G11C13/02 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating molecular electronic devices (10) comprising at least a bottom electrode (14) and a molecular switch film (16) on the bottom electrode (14), includes forming the bottom electrode (14) by a process including: cleaning (36b) portions of the substrate (12) where the bottom electrode (14) is to be deposited; pre-sputtering (36c) the portions; depositing (36d) a conductive layer (14) on at least the portions; and cleaning (36g) the top surface of the conductive layer (14). The conductive electrode (14) properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e. Al 2 O 3 over the conductive layer (14).

35. 发明公开

EP1502312A2 DOCUMENT DE SECURITE A CIRCUIT INTEGRE 审中-公开
标题翻译：与integierter电路安全文件
公开(公告)号：EP1502312A2
公开(公告)日：2005-02-02
申请号：EP03735759.7
申请日：2003-02-19
申请人： BANQUE DE FRANCE
发明人： DUMERY, Thierry
IPC分类号： H01L51/40
CPC分类号： H01L27/28 , G06K19/07745 , H01L51/0005 , H01L51/0037 , H01L51/0039 , H01L51/0508 , H01L2924/0002 , H01L2924/00
摘要： The invention concerns a method for making a security document comprising an integrated circuit, characterized in that the method comprises constituting, directly on part of the document, an integrated circuit.

36. 发明公开

EP1482574A2 Schaltungselement mit einer ersten Schicht aus einem elektrisch isolierenden Substratmaterial und Verfahren zur Herstellung eines Schaltungselements 审中-公开
标题翻译：具有电绝缘性基板材料的制造电路元件的第一层和方法电路元件
公开(公告)号：EP1482574A2
公开(公告)日：2004-12-01
申请号：EP04012793.8
申请日：2004-05-28
申请人： Infineon Technologies AG
发明人： Luyken, Richard Johannes , Schmid, Günter , Seitz, Markus , Thewes, Roland , Weber, Werner
IPC分类号： H01L51/20 , H01L27/00
CPC分类号： H01L51/0595 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C2213/15 , G11C2213/72 , H01L27/28 , H01L51/005 , H01L51/0053 , H01L51/0062 , H01L51/0077
摘要： Das Schaltungselement weist eine erste Schicht aus einem elektrisch isolierenden Substratmaterial und einem ersten elektrisch leitfähigen Material, das als mindestens ein diskreter Bereich dergestalt ausgebildet ist, dass es in das Substratmaterial eingebettet und/oder auf dem Substratmaterial aufgebracht ist. Ferner weist es eine zweite Schicht mit einem zweiten elektrisch leitfähigen Material, und eine monomolekulare Schicht aus zum Elektronentransport befähigten Molekülen, die zwischen der ersten Schicht und der zweiten Schicht angeordnet ist, auf. Dabei weist jedes zum Transport von Ladungsträgern befähigte Molekül auf: mindestens eine redox-aktive Einheit, mindestens eine als Elektronendonator dienende Einheit und mindestens eine als Elektronenakzeptor dienende Einheit, wobei in jedem Molekül die redox-aktive Einheit jeweils zwischen der als Elektronendonator und der als Elektronenakzeptor dienenden Einheit angeordnet ist.
Bezugszeichen

100 Schaltungselement
101 Substratmaterial
102 Diskreter Bereich aus elektrisch leitfähigem Material
103 zum Transport von Ladungsträgern befähigten Moleküle
104 Widerstand
105 Diode
106 Schicht aus elektrisch leitfähigem Material
114 Ankergruppe
115 als Elektronendonator wirkende Einheit
116 als Elektronenakzeptor dienende Einheit
117 redox-aktive Einheit
118 Spacerbereich
119 Spacerbereiche
120 Spacerbereiche
121 Spacerbereiche
122 Pfeil

200 Crosspoint-Zelle
201 Wortleitung
202 Bitleitung
203 Schicht aus den elektrisch aktiven Molekülen

300 Schaltungselement
301 Substratmaterial
302 Bereich aus Gold
303 Bereich aus Gold
304 Bereich aus Gold
305 Schicht aus den elektrisch aktiven Molekülen
306 inerte Moleküle
307 zweite elektrisch leitfähige Schicht
308 Schicht aus Titan
309 Schicht aus Aluminium

401 Spannung
402 Widerstand
403 Kennlinie
404 Kennlinie
405 Kennlinie
406 Bereich
407 Bereich
408 Bereich
411 Di-Kation der Bispyridinium-Einheit
412 Schemadarstellung des Di-Kation der Bispyridinium-Einheit
413 einfach positiv geladenes Radikalkation
414 Schemadarstellung des einfach positiv geladenes Radikalkationa
415 Alkylketten
416 x-Achse
417 kleine positive oder negative Potentiale
418 zum Lesen des Speicherelements eingesetzter Bereich
419 größeres negatives Potential
420 zum Beschreiben des Speicherelements eingesetzter Bereich
421 größeres positives Potential
422 zum Löschen des Speicherelements eingesetzter Bereichs

501 Spannung
502 Strom
503 Kennlinie
504 Sperrbereich
505 Durchlassbereich
506 Durchlassbereich

601 Zelle des Speicherelements
602 Zelle des Speicherelements
603 Zelle des Speicherelements
604 Zelle des Speicherelements
605 Bitleitung
606 Wortleitung
607 Bitleitung
608 Wortleitung

701 Zelle des Speicherelements
702 Zelle des Speicherelements
703 Zelle des Speicherelements
704 Zelle des Speicherelements
705 Bitleitung
706 Wortleitung
707 Bitleitung
708 Wortleitung

1000 Schaltungselement
1002 Schicht
1003 Schicht
摘要翻译：之间的单分子层介入，并在绝缘基板层（101）和与第二导电材料的第二层接触。的单分子层被固定在其上形成导电的，局部的区域（102）所述第一层的材料。作为载流子（103）使单分子层的分子包括：氧化还原活性单元形成的可变电阻（104），并且在电子受体，二极管（105）与电子给体单元形成，与。在每个分子的氧化还原活性单元被用作电子供体和受体单元之间布置。一个独立的claimsoft包括用于使电路组件的相应方法。

37. 发明公开

EP1468423A2 ARRAY-BASED ARCHITECTURE FOR MOLECULAR ELECTRONICS 审中-公开
标题翻译：体系结构数组基地分子电子学
公开(公告)号：EP1468423A2
公开(公告)日：2004-10-20
申请号：EP03731986.0
申请日：2003-01-17
申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY , THE PRESIDENT AND FELLOWS OF HAVARD COLLEGE
发明人： DEHON, Andre , LIEBER, Charles, M.
IPC分类号： G11C11/34 , H03K19/177
CPC分类号： G11C13/025 , B82Y10/00 , G11C8/10 , G11C13/0023 , G11C13/003 , G11C2213/75 , G11C2213/77 , G11C2213/81 , H01L27/28 , H01L27/285 , H01L51/0508 , H01L51/0595
摘要： An architecture for nanoscale electronics is disclosed. The architecture comprises arrays of crossed nanoscale wires having selectively programmable crosspoints. Nanoscale wires of one array are shared by other arrays, thus providing signal propagation between the arrays. Nanoscale signal restoration elements are also provided, allowing an output of a first array to be used as an input to a second array. Signal restoration occurs without routing of the signal to non-nanoscalewires.

38. 发明公开

EP1444719A1 METHOD OF MANUFACTURING MODULES WITH AN ORGANIC INTEGRATED CIRCUIT 审中-公开
标题翻译：用于生产模块的有机集成电路
公开(公告)号：EP1444719A1
公开(公告)日：2004-08-11
申请号：EP02777617.8
申请日：2002-10-18
申请人： Koninklijke Philips Electronics N.V.
发明人： BRUGGER, Christian , FRITZ, Reinhard , LANGE, Anthonie, A. , ROOSMALEN, Johannes, H., M. , WEEKAMP, Jonannus, W.
IPC分类号： H01L21/00 , H01L51/20 , G06K19/07 , G06K19/077 , H01L27/00
CPC分类号： H01L21/67144 , G06K19/077 , H01L21/67132 , H01L21/6838 , H01L24/81 , H01L25/046 , H01L27/28 , H01L2224/81801 , H01L2224/83192 , H01L2924/014 , H01L2924/14
摘要： In a method of manufacturing modules (4), each with at least one integrated circuit (2), the integrated circuits (2) are separated from a previously manufactured circuit configuration (1), which is in the form of a flexible film comprising a plurality of integrated circuits (2) on the basis of a polymer, by a combined stamping-vacuum conveying device (6), after which each of the separated integrated circuits (2) is conveyed to a module substrate (5) and connected to the module substrate (5) so as to form a module (4).

39. 发明公开

EP1378015A1 METHOD AND APPARATUS FOR PROVIDING A HIGH-PERFORMANCE ACTIVE MATRIX PIXEL USING ORGANIC THIN-FILM TRANSISTORS 审中-公开
标题翻译：方法和设备提供有源矩阵像素高效率采用有机薄膜晶体管
公开(公告)号：EP1378015A1
公开(公告)日：2004-01-07
申请号：EP02717575.1
申请日：2002-03-07
申请人： Sarnoff Corporation
发明人： KANE, Michael , CUOMO, Frank , GREENING, Barry
IPC分类号： H01L51/00 , H01L29/04 , H01L31/036
CPC分类号： G02F1/1368 , G02F2202/02 , H01L27/12 , H01L27/28 , H01L51/0545
摘要： A pixel structure (200) having at least one organic thin film transistor (OTFT) (210) that minimizes gate-to-pixel capacitance. In one embodiment, a pixel structure provides a new transistor structure where an OTFT electrode (212) on the data-line side of the transistor is extended or wrapped around three sides of the transistor relative to a pixel-side electrode (214). Thus, the pixel-side electrode can be made very small without reducing the effective width (and therefore on-current) of the transistor.

40. 发明公开

EP1376606A1 A molecular memory obtained using DNA strand molecular switches and carbon nanotubes, and manufacturing method thereof 有权
标题翻译：分子存储器与DNA链作为分子开关和碳纳米管，以及相关的制造方法
公开(公告)号：EP1376606A1
公开(公告)日：2004-01-02
申请号：EP02425408.8
申请日：2002-06-20
申请人： STMicroelectronics S.r.l.
发明人： Occhipinti, Luigi , Buonocore, Francesco , Vinciguerra, Vincenzo , Rizzotto, Gianguido
IPC分类号： G11C13/02 , H01L51/20 , H01L51/30
CPC分类号： G11C13/025 , B82Y10/00 , G06N3/123 , G11C13/0014 , G11C13/0019 , G11C2213/77 , G11C2213/81 , H01L27/28 , H01L51/0048 , H01L51/0093 , H01L51/0595 , Y10S977/855 , Y10S977/885
摘要： Described herein are a molecular memory obtained using DNA strand molecular switches and carbon nanotubes, and a manufacturing method thereof. In particular, the nonvolatile memory is manufactured according to an architecture that envisages the use of carbon nanotubes as electrical connectors and DNA strands as physical means on which to write the information. In other words, the nonvolatile memory is made by means of a set of molecular DNA strand switches, the addressing of which is controlled by molecular wires made up of carbon nanotubes.
摘要翻译：在描述的是使用DNA获得海滩分子开关和碳纳米管的分子存储器，以及它们的制造方法。特别地，非易失性存储器是在架构制造雅丁到并设想使用碳纳米管作为电连接器和DNA链作为物理装置在其上写入信息。换句话说，所述非易失性存储器是由一组分子DNA海滩开关的手段制成的所有其通过由碳纳米管的分子线控制的寻址。

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