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    • 38. 发明公开
    • Method for testing electrical properties of silicon single crystal
    • 伊斯兰法兰西共和国电力公司。
    • EP0487302A2
    • 1992-05-27
    • EP91310648.0
    • 1991-11-19
    • SHIN-ETSU HANDOTAI COMPANY LIMITED
    • Fusegawa, IzumiYamagishi, HirotoshiFujimaki, NobuyoshiKarasawa, Yukio
    • G01N27/92C30B33/00C30B33/08
    • G01N27/92G01R31/2831Y10S148/06Y10S148/162
    • The evaluation of the oxide film dielectric breakdown voltage of a silicon semiconductor single crystal is caried out by cutting a wafer out of the single crystal rod, etching the surface of the wafer with the mixed solution of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, then etching the surface of the wafer with the mixed solution of K₂Cr₂O₇, hydrofluoric acid, and water therby inducing occurrence of pits and scale-like patterns on the surface, determining the density of the scale-like patterns, and computing the oxide film dielectric breakdown voltage by making use of the correlating between the density of scale-like patterns and the oxide film dielectric breakdown voltage. This fact established the method of this invention to be capable of effecting an evaluation equivalent to the evaluation of the oxide film dielectric breakdown voltage of a PW wafer prepared from the single crystal rod.
    • 通过从单晶棒切割晶片来实现对硅半导体单晶的氧化膜介电击穿电压的评价,用氢氟酸和硝酸的混合溶液蚀刻晶片的表面,从而使晶片 然后用K2Cr2O7,氢氟酸和水的混合溶液蚀刻晶片的表面,从而在表面上引起凹坑和鳞片状图案的发生,确定鳞片状图案的密度,并计算氧化膜 通过利用鳞片状图案的密度和氧化膜介电击穿电压之间的相关性来获得介电击穿电压。 这个事实确定了本发明的方法能够进行与从单晶棒制备的PW晶片的氧化膜介电击穿电压的评估相当的评估。